FN Thomson Reuters Web of Science™ VR 1.0 PT P PN EP1343052-A2; CN1442752-A; JP2003255564-A; US2003170571-A1; KR2003072199-A; TW200304046-A; JP3858730-B2; US7416837-B2; KR877873-B1; CN101609254-A; TW200944941-A; TW319512-B1; TW319515-B1; CN1442752-B; CN101609254-B TI Resist pattern-improving material used for preparing semiconductor device, e.g. EPROM, includes water-soluble or alkali-soluble composition comprising resin, crosslinking agent or non-ionic surfactant and optionally aromatic compound. AU NOZAKI K KOZAWA M OZAWA Y KOJI N YOSHIKAZU O MIWA K AE FUJITSU LTD (FUIT-C) FUJITSU LTD (FUIT-C) FUJITSU LTD (FUIT-C) FUJITSU LTD (FUIT-C) GA 2003879739 AB NOVELTY - A resist pattern-improving material comprises a water-soluble or alkali-soluble composition comprising a resin, a crosslinking agent or non-ionic surfactant and optionally a water-soluble aromatic compound. USE - The resist pattern improving material is used for preparing a semiconductor device (claimed), e.g. EPROM ADVANTAGE - The material reduces edge roughness during formation of a fine pattern, and has improved etching resistance. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for preparing a pattern comprising forming a resist pattern; and coating the resist pattern-improving material on the surface of the resist pattern, where the resist-pattern improving material is mixed with the resist pattern at the interface in between. DESCRIPTION OF DRAWING(S) - The figure shows a cross-sectional view of the method. TF TECHNOLOGY FOCUS - POLYMERS - Preferred Resin: The resin comprises polyvinyl alcohol, polyvinyl acetal (5-40 wt.%) and/or polyvinyl acetate.Preferred Surfactant: The non-ionic surfactant comprises polyoxyethylene-polyoxypropylene copolymer, polyoxyalkylene alkyl ethers, polyoxyethylene alkyl ethers or polyoxyethylene derivatives. TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The crosslinking agent comprises melamine derivatives, urea derivatives or uril derivatives.The water-soluble aromatic compound comprises polyhydric phenols such as resorcinol, resorcinol (4) arene, pyrogallol, gallic acid or their derivatives; aromatic carboxylic acids such as salicylic acid, phthalic acid, dihydroxybenzoic acid or their derivatives; naphthalene polyhydric alcohols such as naphthalenediol, naphthalenetriol or their derivatives; or benzophenone derivatives such as alizarin yellow A.The non-ionic surfactant comprises sorbic fatty acid esters, glycerin fatty acid esters, primary alcohol ethoxylates or phenol ethoxylates.The material further comprises organic solvent(s) including alcohols, linear esters, cyclic esters and cyclic ethers. TECHNOLOGY FOCUS - ELECTRONICS - Preferred Method: The amount of mixing is controlled by the coated film thickness, the temperature for baking and/or the period for baking, to reduce the amount of the edge roughness of the resist pattern at a predetermined level. The variation of size of the resist pattern is controlled to at most 10%, and the amount of the edge roughness is controlled to reduce within at most 5%, of the size of the pattern. The resist pattern is formed by irradiating an argon fluoride (ArF) excimer or laser light having a wavelength shorter than that of the ArF excimer light, where the pattern of the resist-pattern-improving material includes a base resin which does not transmit the ArF excimer laser light. EXAMPLE - A resist pattern-improving material was prepared using 16 pbw KW-3 (polyvinyl acetal resin) 1 wt.% tetramethoxy methyl glycoluril and 0.0625 pbw TN-80 (surfactant). DC A89 (Photographic, laboratory equipment, optical); A14 (Other substituted mono-olefins, PVC, PTFE); A17 (Unsubstituted aliphatic mono-olefins, polyethylene); A21 (Epoxides, aminoplasts, phenoplasts); A25 (Polyurethanes, polyethers); E19 (Other organic compounds general - unknown structure, mixtures); G06 (Photosensitive compositions and bases, photographic processes); L03 (Electro-(in)organic, chemical features of electrical devices); P84 (Other photographic); U11 (Semiconductor Materials and Processes) MC A04-H00H; A08-C01; A08-M10; A08-S01; A12-E07C; A12-L02B2; E06-D09; E07-D13B; E10-A13B2; E10-C02C2; E10-C03; E10-C04C; E10-E02D; E10-E04; E10-F02A2; E10-G02G2; E10-G02H2B; G06-A; G06-D06; L04-C05; U11-A06A IP G03F-007/40; G03F-007/00; H01L-021/027; G03F-007/038; G03F-007/16; G03F-007/20; G03F-007/26; H01L-021/306; G03C-005/00; G03F-007/004; H01L-021/02; C08L-029/04; C08L-031/04; C08L-059/00 PD EP1343052-A2 10 Sep 2003 G03F-007/40 200382 Pages: 40 English CN1442752-A 17 Sep 2003 G03F-007/038 200382 Chinese JP2003255564-A 10 Sep 2003 G03F-007/40 200382 Pages: 25 Japanese US2003170571-A1 11 Sep 2003 G03F-007/26 200382 English KR2003072199-A 13 Sep 2003 H01L-021/027 200405 TW200304046-A 16 Sep 2003 G03F-007/038 200557 Chinese JP3858730-B2 20 Dec 2006 G03F-007/40 200701 Pages: 33 Japanese US7416837-B2 26 Aug 2008 G03C-005/00 200857 English KR877873-B1 13 Jan 2009 H01L-021/027 200920 CN101609254-A 23 Dec 2009 G03F-007/00 201003 Chinese TW200944941-A 01 Nov 2009 G03F-007/038 201036 Chinese TW319512-B1 11 Jan 2010 G03F-007/038 201118 Chinese TW319515-B1 11 Jan 2010 G03F-007/038 201118 Chinese CN1442752-B 03 Oct 2012 G03F-007/038 201305 Chinese CN101609254-B 30 Jan 2013 G03F-007/00 201330 Chinese AD EP1343052-A2 EP000957 16 Jan 2003 CN1442752-A CN101768 22 Jan 2003 JP2003255564-A JP059429 05 Mar 2002 US2003170571-A1 US290493 08 Nov 2002 KR2003072199-A KR086671 30 Dec 2002 TW200304046-A TW137057 23 Dec 2002 JP3858730-B2 JP059429 05 Mar 2002 US7416837-B2 US290493 08 Nov 2002 KR877873-B1 KR086671 30 Dec 2002 CN101609254-A CN10137846 22 Jan 2003 TW200944941-A TW123917 23 Dec 2002 TW319512-B1 TW137057 23 Dec 2002 TW319515-B1 TW123917 23 Dec 2002 CN1442752-B CN101768 22 Jan 2003 CN101609254-B CN10137846 22 Jan 2003 FD JP3858730-B2 Previous Publ. Patent JP2003255564 KR877873-B1 Previous Publ. Patent KR2003072199 PI JP059429 05 Mar 2002 DS EP1343052-A2: (Regional): AL; AT; BE; BG; CH; CY; CZ; DE; DK; EE; ES; FI; FR; GB; GR; HU; IE; IT; LI; LT; LU; LV; MC; MK; NL; PT; RO; SE; SI; SK; TR CP EP1343052-A2 DE10014083-A1 MITSUBISHI DENKI KK (MITQ); RYODEN SEMICONDUCTOR SYSTEM ENG (RYOD-Non-standard) TANAKA M, ISHIBASHI T DE19814142-A1 MITSUBISHI DENKI KK (MITQ) ISHIBASHI T, TOYOSHIMA T, MINAMIDE A, KATAYAMA K DE19843179-A1 MITSUBISHI DENKI KK (MITQ) ISHIBASHI T, TOYOSHIMA T, KATAYAMA K, YASUDA N EP1152036-A1 CLARIANT INT LTD (CLRN) KANDA T, TANAKA H EP1315043-A1 FUJITSU LTD (FUIT) KOZAWA M, NOZAKI K, NAMIKI T, KON J, YANO E GB676372-A JP04224877-A JP2001162929-A JP2001332484-A TOSHIBA KK (TOKE) JP2002060793-A US3067077-A US5622909-A RICOH KK (RICO) FURUYA H, TANIGUCHI K, SUZAKI H, HAYAKAWA K US5858620-A MITSUBISHI DENKI KK (MITQ) ISHIBASHI T, MINAMIDE A, TOYOSHIMA T, KATAYAMA K US20020037476-A1 US6319853-B1 MITSUBISHI DENKI KK (MITQ) ISHIBASHI T, TOYOSHIMA T, KATAYAMA K, YASUDA N WO2003014830-A1 FUJITSU LTD (FUIT) NOZAKI K, KOZAWA M, NAMIKI T, KON J, YANO E JP3858730-B2 JP10073927-A MITSUBISHI DENKI KK (MITQ) ISHIBASHI T, MINAMIDE A, TOYOSHIMA T, KATAYAMA K JP11204399-A MITSUBISHI DENKI KK (MITQ) ISHIBASHI T, TOYOSHIMA T, KATAYAMA K, YASUDA N JP11283910-A MITSUBISHI ELECTRIC CORP (MITQ) YASUDA N, TOYOSHIMA T, ISHIBASHI T, KATAYAMA K JP2000298356-A MITSUBISHI ELECTRIC CORP (MITQ); RYODEN SEMICONDUCTOR SYSTEM ENG (RYOD-Non-standard) TOYOSHIMA T, TANAKA M, ISHIBASHI T, YASUDA N JP2001019860-A CLARIANT INT LTD (CLRN) KANDA T, TANAKA H JP2001194785-A JP2001228616-A MITSUBISHI ELECTRIC CORP (MITQ); RYODEN SEMICONDUCTOR SYSTEM ENG (RYOD-Non-standard) TANAKA M, ISHIBASHI T US7416837-B2 DE10014083-A1 MITSUBISHI DENKI KK (MITQ); RYODEN SEMICONDUCTOR SYSTEM ENG (RYOD-Non-standard) TANAKA M, ISHIBASHI T DE19814142-A1 MITSUBISHI DENKI KK (MITQ) ISHIBASHI T, TOYOSHIMA T, MINAMIDE A, KATAYAMA K DE19843179-A1 MITSUBISHI DENKI KK (MITQ) ISHIBASHI T, TOYOSHIMA T, KATAYAMA K, YASUDA N EP1152036-A1 CLARIANT INT LTD (CLRN) KANDA T, TANAKA H EP1315043-A1 FUJITSU LTD (FUIT) KOZAWA M, NOZAKI K, NAMIKI T, KON J, YANO E EP115203-B RICHTER GEDEON VEGYESZETI GYAR (RICT) PALOSI E, SZEBERENYI S, SZPORNY L, GOROG S, HAJDU I, TOTH E, TORLEY J GB676372-A JP04224877-A JP06250379-A JP10073927-A MITSUBISHI DENKI KK (MITQ) ISHIBASHI T, MINAMIDE A, TOYOSHIMA T, KATAYAMA K JP2001162929-A JP2001228616-A MITSUBISHI ELECTRIC CORP (MITQ); RYODEN SEMICONDUCTOR SYSTEM ENG (RYOD-Non-standard) TANAKA M, ISHIBASHI T JP2001332484-A TOSHIBA KK (TOKE) JP2002023366-A SHINETSU CHEM IND CO LTD (SHIE) FURUHATA T, KATO H JP2002023389-A SHINETSU CHEM IND CO LTD (SHIE) JP2002060793-A US3067077-A US4983492-A US5622909-A RICOH KK (RICO) FURUYA H, TANIGUCHI K, SUZAKI H, HAYAKAWA K US5858620-A MITSUBISHI DENKI KK (MITQ) ISHIBASHI T, MINAMIDE A, TOYOSHIMA T, KATAYAMA K US6020093-A US20020037476-A1 US20030102285-A1 US20030143490-A1 US6319853-B1 MITSUBISHI DENKI KK (MITQ) ISHIBASHI T, TOYOSHIMA T, KATAYAMA K, YASUDA N US6335143-B1 WAKO PURE CHEM IND LTD (WAKP); MATSUSHITA ELECTRONICS CORP (MATE) SUMINO M, FUJIE H, KATSUYAMA A, ENDO M US6537719-B1 CLARIANT INT LTD (CLRN); CLARIANT JAPAN KK (CLRN) TAKAHASHI S US6579657-B1 MITSUBISHI DENKI KK (MITQ) ISHIBASHI T, TOYOSHIMA T, MINAMIDE A, KATAYAMA K WO2003014830-A1 FUJITSU LTD (FUIT) NOZAKI K, KOZAWA M, NAMIKI T, KON J, YANO E KR877873-B1 KR98080853-A MITSUBISHI DENKI KK (MITQ) ISHIBASHI T, TOYOSHIMA T, MINAMIDE A, KATAYAMA K KR2001081946-A MITSUBISHI ELECTRIC CORP (MITQ); RYODEN SEMICONDUCTOR SYSTEM ENG (RYOD-Non-standard) TANAKA M, ISHIBASHI T CN1442752-B CN1222756-A MITSUBISHI DENKI KK (MITQ) ISHIBASHI T, TOYOSHIMA T, KATAYAMA K, YASUDA N CN1314931-A CLARIANT INT LTD (CLRN) KANDA T, TANAKA H DE10014083-A1 MITSUBISHI DENKI KK (MITQ); RYODEN SEMICONDUCTOR SYSTEM ENG (RYOD-Non-standard) TANAKA M, ISHIBASHI T GB676372-A US5622909-A RICOH KK (RICO) FURUYA H, TANIGUCHI K, SUZAKI H, HAYAKAWA K CN101609254-B CN1199922-A MITSUBISHI DENKI KK (MITQ) ISHIBASHI T, TOYOSHIMA T, MINAMIDE A, KATAYAMA K CN1294703-A CLARIANT INT LTD (CLRN); CLARIANT JAPAN KK (CLRN) TAKAHASHI S EP1152036-A1 CLARIANT INT LTD (CLRN) KANDA T, TANAKA H US6020093-A US6335143-B1 WAKO PURE CHEM IND LTD (WAKP); MATSUSHITA ELECTRONICS CORP (MATE) SUMINO M, FUJIE H, KATSUYAMA A, ENDO M CR EP1343052-A2 DATABASE WPI Section Ch, Week 199239 Derwent Publications Ltd., London, GB; Class A14, AN 1992-320231 XP002255167 & JP 04 224877 A (IG GIJUTSU KENKYUSHO KK) , 14 August 1992 (1992-08-14) PATENT ABSTRACTS OF JAPAN vol. 2000, no. 23, 10 February 2001 (2001-02-10) & JP 2001 162929 A (DAICEL CHEM IND LTD), 19 June 2001 (2001-06-19) PATENT ABSTRACTS OF JAPAN vol. 2002, no. 03, 3 April 2002 (2002-04-03) & JP 2001 332484 A (TOSHIBA CORP), 30 November 2001 (2001-11-30) PATENT ABSTRACTS OF JAPAN vol. 2002, no. 06, 4 June 2002 (2002-06-04) & JP 2002 060793 A (KAO CORP), 26 February 2002 (2002-02-26) US7416837-B2 Chemically ampilified ArF excimer laser resists using the absorption band shift method Makoto Nakase, Takuya Naito, Koji Asakawa, Akinori Hongu, Naomi Shida, and Tohru Ushirogouchi Proc. SPIE 2438, 445 (1995) hereinafter referred to as Nakase et al. Mamoru Terai, et al.; Below 70-nm Contact Hole Pattern with RELACS Process on ArF Resist; Advanced Technology R&D Center, Mitsubishi Electric, Japan. Mamoru Teria, et al.; Newly Developed Resolution Enhancement Lithography Assisted by Chemical Shrink Process and Materials for Next-Generation Devices; Japanese Journal of Applied Physics, vol. 45, No. 6B, 2006, pp. 5354-5358. Takashi Kanda, et al.; Advanced Microlithography Process with Chemical Shrink Technology; Advances in Resist and Processing XVII, 2000, Proceedings of SPIE vol. 3999, pp. 881-889. Takeo Ishibashi, et al.; Advanced Micro-Lithography Process for i-line Lithography; Jpn. J. Appl. Phys., 2001, vol. 40, pp. 7156-7161. Takeo Ishibashi, et al.; Advanced Micro-Lithography Process with Chemical Shrink Technology; Japanese Journal of Applied Physics, vol. 40, Part 1, No. 1, Jan. 2001, pp. 419-425. CN1442752-B $$PH310$$ $$PH311$$ DN 203304-0-0-0-K M; 203306-0-0-0-K M; 130469-0-0-0-K M; 803-0-0-0-K M U; 10773-0-0-0-K M U; 7650-0-0-0-K M U; 5781-0-1-0-U; 133223-0-0-0-U; 5781-0-4-0-U; 5781-0-0-0-K M U; 129638-0-0-0-U; 186283-0-0-0-U; 3727-0-0-0-K M U; 104714-1-0-0-K M; 829-0-0-0-; 444-0-0-0-; 238-0-0-0- MN 011254001 K M; 011254002 K M; 011254003 K M; 011254007 K M; 011254008 K M; 011254009 K M; 011254010 K M; 011254011 K M; 011254012 K M; 011254004 K M; 011254005 K M; 011254006 K M RI 00918; 00212 CI RA02A2-K M; RA02A5-K M; R06528-K M; R00851-K M; R00539-K M; R01170-K M; R09472-K M; R00291-K M; R07025-K M; R00554-K M; R07024-K M; R04686-K M; R00835-; R00351-; R00370- RG 0851-U; 0539-U; 1170-U; 0291-U; 0554-U UT DIIDW:2003879739 ER PT P PN US2003174754-A1 TI High repetition rate fluoride excimer laser for manufacturing semiconductor chips has chamber for producing ultraviolet wavelength discharge at specified pulse rate and having magnesium fluoride crystal optic window(s). AU PELL M A SMITH C M SPARROW R W THEN P M AE PELL M A (PELL-Individual) SMITH C M (SMIT-Individual) SPARROW R W (SPAR-Individual) THEN P M (THEN-Individual) GA 2003875003 AB NOVELTY - A high repetition rate fluoride excimer laser comprises an excimer laser chamber for producing UV wavelength lambda less than 200 nm discharge at a pulse repetition rate of at least 4 kHz. The excimer laser chamber includes magnesium fluoride crystal optic window(s) for outputting the lambda greater than 200 nm discharge as a at least 4 kHz repetition rate excimer laser of greater than 200 nm output. USE - For producing UV wavelength (claimed) useful for the manufacture of semiconductor chips. ADVANTAGE - The invention provides improved reliability in the operation of at least 4 kHz repetition rate laser systems. It provides production of high laser power output at a high repetition rate for long laser system operation time. DETAILED DESCRIPTION - A high repetition rate fluoride excimer laser comprises an excimer laser chamber (22) for producing an UV wavelength lambda of less than 200 nm discharge at a pulse repetition rate of at least 4 kHz. The excimer laser chamber includes magnesium fluoride crystal optic window(s) for outputting the lambda greater than 200 nm discharge as a at least 4 kHz repetition rate excimer laser lambda of greater than 200 nm output (24). The magnesium fluoride crystal optic window(s) (20) has a 255 nm induced absorption less than 0.08 Abs/42 mm when exposed to 5 million pulses of 193 nm light at a fluence of at least 40 mj/cm2/pulse and a 42 mm crystal 120 nm transmission of at least 30% and a 200-210 nm absorption coefficient of less than 0.0017 cm-1. DESCRIPTION OF DRAWING(S) - The figure illustrates the laser system having argon fluoride excimer laser chamber and magnesium fluoride crystal optic windows. Magnesium fluoride crystal optic window (20) Excimer laser chamber (22) Output (24) Flat planar window faces (26) Magnesium fluoride crystal optic prism (30) TF TECHNOLOGY FOCUS - IMAGING AND COMMUNICATION - Preferred Component: The laser system includes a magnesium fluoride crystal optic prism (30) external from the excimer laser chamber. The at least 4 kHz repetition rate excimer laser lambda of greater than 200 nm output is transmitted through the magnesium fluoride crystal optic prism with the magnesium fluoride crystal optic prism having 255 nm induced adsorption less than 0.08 Abs/42 mm when exposed to 5 million pulses of 193 nm light at a fluence of at least 40 mj/cm2/pulse and 42 mm crystal 120 nm transmission of at least 30%. The magnesium fluoride optic has a flat planar face (26) oriented (non)normal to a c-axis of the magnesium fluoride crystal. It has a c-axis grown magnesium fluoride crystallographic orientation.Preferred Parameter: The lambda is centered about 193 nm. The 42 mm crystal 120 nm transmission is at least 35% (preferably at least 40%). The magnesium fluoride crystal optic window has 203-207 nm absorption coefficient less than 0.0017 cm-1. The magnesium fluoride crystal optic prism has 200-210 nm range absorption coefficient less than 0.0017 cm-1. The lambda is centered at 193 nm. TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The magnesium fluoride crystal optic window has iron contamination level of less than 0.15 ppm; chrome contamination level of less than 0.008 ppm; copper and cobalt contamination levels of both less than 0.04 ppm; aluminum contamination level of less than 0.9 ppm; and nickel, vanadium, and lead contamination levels all are less than 0.04 ppm. DC L03 (Electro-(in)organic, chemical features of electrical devices); U11 (Semiconductor Materials and Processes); V08 (Lasers and Masers) MC L03-F02; U11-C03D; U11-C09X; V08-A04B; V08-A09 IP H01S-003/22; H01S-003/223 PD US2003174754-A1 18 Sep 2003 H01S-003/22 200381 Pages: 17 AD US2003174754-A1 US365841 13 Feb 2003 FD US2003174754-A1 Provisional Application US356987P PI US356987P 13 Feb 2002 US365841 13 Feb 2003 UT DIIDW:2003875003 ER PT P PN US2003186524-A1; CN1449015-A; KR2003078978-A; US6720248-B2; KR465063-B; TW200305254-A; CN1270371-C; TW302725-B1 TI Formation of metal interconnection layer in a semiconductor device involves reflowing of metal seed layer by laser process to form metal seed layer of uniform thickness. AU RYO S G PYO S G PYO S SUNG G P AE HYNIX SEMICONDUCTOR INC (HYNX-C) HELIX SEMICONDUCTOR CO LTD (HELI-Non-standard) HYNIX SEMICONDUCTOR INC (HYNX-C) HYNIX SEMICONDUCTOR INC (HYNX-C) GA 2003864064 AB NOVELTY - A metal interconnection layer is formed in a semiconductor device by reflowing a metal seed layer by a laser process to form the metal seed layer of an uniform thickness. USE - For the formation of metal interconnection layer in semiconductor device. ADVANTAGE - The invention can form a metal interconnection layer in a semiconductor device by which a dual damascene pattern, a via hole or a trench having a high aspect ratio can be filled with a metal film consecutively without void by means of an electroplating method. DETAILED DESCRIPTION - Formation of a metal interconnection layer in a semiconductor device comprises: (a) forming a lower conductive layer on a semiconductor substrate (100); (b) forming an interlayer insulating film (104) on the semiconductor substrate on which the lower conductive layer (102) is formed; (c) selectively etching the interlayer insulating film to form an opening of a given shape through which the lower conductive layer is exposed; (d) forming a metal seed layer (110) along the step on the result in which the opening of the given shape is formed; (e) reflowing the metal seed layer by a laser process (112) to form the metal seed layer of an uniform thickness; (f) performing a hydrogen reduction annealing process for the metal seed layer; and (g) forming a metal film on the metal seed layer by an electroplating method. DESCRIPTION OF DRAWING(S) - The figure is a cross sectional view of semiconductor devices for explaining a method of forming a metal interconnection layer in the semiconductor device. Substrate (100) Lower conductive layer (102) Interlayer insulating film (104) Barrier layer (108) Metal seed layer (110) Laser process (112) TF TECHNOLOGY FOCUS - ELECTRONICS - Preferred Method: The laser process is performed using nitrogen or helium as a light source of a laser. It includes illuminating the laser beam by moving the semiconductor substrate to scan with the light source of the laser being fixed, or by moving the light source of the laser to scan the semiconductor substrate with the semiconductor substrate being fixed. It may also include illuminating the laser beam by reflecting the laser emitted from a laser discharge device using a reflecting mirror and making the focus of the laser beam using a focus control means in order to control the energy intensity. It also includes illuminating the laser beam by positing a slit between a focus control device and the semiconductor substrate and then controlling the intensity of the laser beam emitted from the focus control device. It is also performed using an argon fluoride (ArF) or krypton fluoride excimer laser of a short wavelength. The hydrogen reduction annealing process is performed using a hydrogen gas, or a hydrogen-mixed gas containing Ar or nitrogen of a given concentration at room temperature through 350degreesC for 1 minute through 3 hours, to make rough the grain size of the metal seed layer and remove a native oxide film formed on the surface of the metal seed layer. The method further comprises the step of forming a diffusion barrier layer (108) on the semiconductor substrate in which the opening is formed before the metal seed layer is formed. After the steps of forming the metal film using the electroplating method, a hydrogen reduction annealing process is performed for the metal film; and a chemical mechanical polishing process is performed for the semiconductor substrate in which the metal film is formed. Preferred Condition: The laser process includes illuminating the laser beam at 1-5 mJ/cm2 and 1-20 KV. Preferred Dimension: The metal seed layer is formed in thickness of 50-2500 Angstrom . TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Material: The metal seed layer is formed of copper (Cu), nickel, molybdenum, platinum, titanium or aluminum. The metal film is a Cu film. DC L03 (Electro-(in)organic, chemical features of electrical devices); U11 (Semiconductor Materials and Processes) MC L04-C10; L04-C13; L04-C16A; U11-C05D3 IP H01L-021/44; H01L-021/768; H01L-021/28; H01L-021/4763 PD US2003186524-A1 02 Oct 2003 H01L-021/44 200380 Pages: 9 English CN1449015-A 15 Oct 2003 H01L-021/768 200404 Chinese KR2003078978-A 10 Oct 2003 H01L-021/28 200411 US6720248-B2 13 Apr 2004 H01L-021/4763 200425 English KR465063-B 06 Jan 2005 H01L-021/28 200532 TW200305254-A 16 Oct 2003 H01L-021/768 200557 Chinese CN1270371-C 16 Aug 2006 H01L-021/28 200682 Chinese TW302725-B1 01 Nov 2008 H01L-021/28 200940 Chinese AD US2003186524-A1 US325845 23 Dec 2002 CN1449015-A CN160425 30 Dec 2002 KR2003078978-A KR017701 01 Apr 2002 US6720248-B2 US325845 23 Dec 2002 KR465063-B KR017701 01 Apr 2002 TW200305254-A TW136428 17 Dec 2002 CN1270371-C CN160425 30 Dec 2002 TW302725-B1 TW136428 17 Dec 2002 FD KR465063-B Previous Publ. Patent KR2003078978 PI KR017701 01 Apr 2002 US325845 23 Dec 2002 FS 438/622; 438/638; 438/642; 438/643; 438/646; 438/660; 438/662; 438/687 CP US6720248-B2 US6130102-A US20020142590-A1 US20030087522-A1 US20030143839-A1 US20030160326-A1 US6211034-B1 TEXAS INSTR INC (TEXI) VISOKAY M R, COLOMBO L, MCINTYRE P, SUMMERFELT S R US6274424-B1 MOTOROLA INC (MOTI) WHITE B E, JONES R E US6420189-B1 ADVANCED MICRO DEVICES INC (ADMI) LOPATIN S US6436723-B1 TOSHIBA KK (TOKE) TOMITA H, NADAHARA S UT DIIDW:2003864064 ER PT P PN US6608321-B1 TI Extreme ultraviolet light reticle inspection system for semiconductor device manufacture, detects light of different wavelengths reflected from reticle, and processes received light to improve contrast ratio. AU LA FONTAINE B M LEVINSON H J SCHEFSKE J A AE ADVANCED MICRO DEVICES INC (ADMI-C) GA 2003828402 AB NOVELTY - A laser source (12) emits light of different wavelengths towards reticle (18). A detector (24) receives the reflected light of different wavelengths such that the absorbing and multilayer pattern exhibits similar or different reflective characteristics with respect to wavelength. A computer (30) calculates the difference between received lights according to their wavelengths, and improves contrast ratio. USE - For inspecting extreme ultraviolet light (EUV) reticle or photomask in semiconductor device manufacture e.g. for integrated circuit, and for determining defects due to foreign matter such as dust scratches, bubbles striations, on reticle. ADVANTAGE - Enables detecting defects and patterns on extreme ultraviolet reticle, reliably, thereby improving contrast ratio. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for reticle inspection method. DESCRIPTION OF DRAWING(S) - The figure shows the block diagram of an inspection system for inspecting a mask or reticle. inspection system (10) light source (12) reticle (18) detector (24) computer (30) DC T01 (Digital Computers); U11 (Semiconductor Materials and Processes) MC T01-J07B1; U11-C04A1E; U11-C04E1; U11-F01B1; U11-F01B4 IP G01B-011/06; G01N-021/00; G01N-021/64; G01N-021/88 PD US6608321-B1 19 Aug 2003 G01N-021/00 200377 Pages: 12 AD US6608321-B1 US773968 01 Feb 2001 PI US773968 01 Feb 2001 UT DIIDW:2003828402 ER PT P PN JP2003303764-A; JP3897287-B2 TI Laser produced plasma light source for wafer exposure process, includes nozzle that ejects liquid at irradiating point, irradiated by excitation laser radiation,. AE GIGAPHOTON KK (GIGA-Non-standard) GA 2003824091 AB NOVELTY - The device plasmifies and generates extreme ultraviolet-ray (13) of an ultraviolet region. A laser apparatus (25) performs condensing irradiation of excitation laser-radiation (32) at irradiating point (29). A nozzle ejects liquid at irradiating point. USE - For wafer exposure process used in semiconductor device manufacture. ADVANTAGE - Production efficiency of extreme ultra-violet ray is improved and amount of supply of liquid is increased. DESCRIPTION OF DRAWING(S) - The figure shows the block diagram of the extreme ultraviolet light source device. (Drawing includes non-English language text). extreme ultraviolet-ray (13) excitation laser apparatus (25) irradiating point (29) excitation laser-radiation (32) lens (38) DC U11 (Semiconductor Materials and Processes) MC U11-C04E1 IP G21K-005/00; G21K-005/02; G21K-005/08; H01L-021/027; H05G-001/00; H05G-002/00; H01L-021/02 PD JP2003303764-A 24 Oct 2003 H01L-021/027 200377 Pages: 7 JP3897287-B2 22 Mar 2007 H01L-021/02 200723 Pages: 9 AD JP2003303764-A JP110393 12 Apr 2002 JP3897287-B2 JP110393 12 Apr 2002 FD JP3897287-B2 Previous Publ. Patent JP2003303764 PI JP110393 12 Apr 2002 FS x CP JP3897287-B2 JP1006349-A HOYA CORP (HOYA) YAMANAKA C, MOCHIZUKI T JP2000002800-A TOYOTA JIDOSHA KK (TOYT); TOYOTA CHUO KENKYUSHO KK (TOYW); TOYOTAMAX KK (TOYO-Non-standard) JP2000509190-A HERTZ H M (HERT-Individual) HERTZ H M, MALMQVIST L, RYMELL L, BERGLUND M JP2001319800-A TRW INC (THOP) MCGREGOR R D, CLENDENING C W UT DIIDW:2003824091 ER PT P PN US2003160329-A1; DE10219651-A1; JP2003257965-A; KR2003070295-A; US6747357-B2; JP3620838-B2; KR469750-B TI Production of dielectric device for, e.g. phase shifter, by repeatedly depositing dielectric materials to maintain lattice coherent or partial coherence, or to form artificial lattice having identical directional feature. AU LEE J KIM J KIM L KIM Y S LEE J C KIM J H KIM L J KIM I J KIM Y J AE UNIV SUNGKYUNKWAN (USKK-C) UNIV SUNKYUNKWAN (UYSU-Non-standard) UNIV SUNGKYUNKWAN (USKK-C) GA 2003811297 AB NOVELTY - A dielectric device is produced by repeatedly depositing at least two dielectric materials of different dielectric constant within a critical thickness in the repeating period to maintain lattice coherent or partial coherence; or depositing at least two dielectric materials in a predetermined alignment for a functional device to form an artificial lattice having identical directional feature. USE - The method is for the production of dielectric device for microwave voltage tunable device, such as phase shifter, tunable filter, or steerable antenna; or for metal oxide semiconductor (MOS) devices (claimed). ADVANTAGE - The dielectric improves tunability of the microwave voltage tunable device, and improved the dielectric constant of a capacitor of the MOS devices. DESCRIPTION OF DRAWING(S) - The figure is a sectional view of the dielectric device having the artificial lattice. Substrate (10) Bottom electrode (11) Barium titanate (12') Strontium titanate (13') Top electrode (14) TF TECHNOLOGY FOCUS - ELECTRONICS - Preferred Condition: The repeating period is determined within 0.8-20 nm. The dielectric film is produced by pulsed laser deposition process, molecule beam epitaxial process, chemical vapor deposition process, physical vapor deposition process, or atomic layer deposition process.The pulsed laser deposition process involves:(i) setting a deposition temperature at 600-700degreesC while raising the temperature by 10degreesC/minute and maintaining a partial pressure of oxygen in a 1-300 mTorr;(ii) rotating a substrate (10) at a predetermined speed within 8-12 rpm;(iii) focusing a laser having 248 nm wavelength and 30 ns of pulse in a size of 8x2 mm using krypton fluoride gas as laser source, and inputting targets of barium titanate and strontium titanate having 99.9% purity into the substrate with setting power intensity of 1-3 J/cm2;(iv) performing the deposition process by radiating the laser to the targets at 1 pulse/sec with a deposition speed for barium titanate and strontium titanate layers at 9-13 and 15 pulse/l unit lattice, respectively; and(v) lowering the temperature of the chamber by 8-12degreesC/minute while maintaining the partial pressure of oxygen in the chamber at 300-500 Torr, after forming the artificial lattice using the barium titanate and strontium titanate.Preferred Property: The lattice (c/a) of tetragonal barium titanate (12') is elongated in c-axis direction at 1.01-1.05, and the lattice of cubic strontium titanate (13') is elongated in an axis direction at 0.08-1. TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The dielectric material is capable of depositing the atomic unit layers including perovskite, tungsten bronze, or pyroclore structures. It includes potassium niobate, potassium tantalate, lead titanate, lead zirconate, or calcium titanate having a perovskite structure, preferably barium titanate and strontium titanate. DC L03 (Electro-(in)organic, chemical features of electrical devices); U11 (Semiconductor Materials and Processes); U12 (Discrete Devices, e.g. LEDs, photovoltaic cells) MC L03-D01; L03-D01B; L03-H03; U11-C05B4; U12-D02A IP H01L-023/53; H01L-023/12; H01L-023/48; H01L-023/52; H01L-029/40; C23C-016/455; C23C-016/40; C30B-023/02; H01L-021/31; H01L-021/316; H01L-021/822; H01L-021/8242; H01L-027/04; H01L-027/105; H01L-027/108; H01L-029/78; C30B-023/08; C30B-029/22; H01B-012/00 PD US2003160329-A1 28 Aug 2003 H01L-023/53 200376 Pages: 21 English DE10219651-A1 11 Sep 2003 C23C-016/455 200376 German JP2003257965-A 12 Sep 2003 H01L-021/316 200376 Pages: 14 KR2003070295-A 30 Aug 2003 H01L-027/105 200406 US6747357-B2 08 Jun 2004 H01L-023/48 200437 English JP3620838-B2 16 Feb 2005 H01L-021/316 200513 Pages: 17 KR469750-B 02 Feb 2005 H01L-027/105 200541 AD US2003160329-A1 US135764 01 May 2002 DE10219651-A1 DE1019651 02 May 2002 JP2003257965-A JP137049 13 May 2002 KR2003070295-A KR009767 23 Feb 2002 US6747357-B2 US135764 01 May 2002 JP3620838-B2 JP137049 13 May 2002 KR469750-B KR009767 23 Feb 2002 FD JP3620838-B2 Previous Publ. Patent JP2003257965 KR469750-B Previous Publ. Patent KR2003070295 PI KR009767 23 Feb 2002 US135764 01 May 2002 FS C23C016/40; C23C016/455; C30B023/02; H01L021/31; 25715; 25718; 25720; 25722; 25727; 257700; 257701; 257724; 257725; 257728; 257750-753; 257758; 257759; 257760; 2579; x CP DE10219651-A1 JP2001302400-A MURATA MFG CO LTD (MURA) WO9312542-A1 SYMETRIX CORP (SYMX) PAZ DE ARAUJO C A, CUCHIARO J D, SCOTT M C, MCMILLAN L D WO200116395-A1 MICRON TECHNOLOGY INC (MICR-Non-standard) BASCERI C, GEALY D US6747357-B2 JP1133997-A MATSUSHITA ELEC IND CO LTD (MATU) US6069820-A TOSHIBA KK (TOKE) US6100578-A SONY CORP (SONY) US6151240-A SONY CORP (SONY) US6265019-B1 BIANCONI A (BIAN-Individual) BIANCONI A US6436526-B1 MATSUSHITA ELECTRIC IND CO LTD (MATU) ODAGAWA A, SAKAKIMA H, HIRAMOTO M, MATSUKAWA N US2002074544-A1 KOREA ELECTRONICS&TELECOM RES INST (KETR) CHOI C H, KANG G Y, SUNG G Y US2002122959-A1 HITACHI MAXELL KK (HITM) MATSUNUMA S, YANO A, ONUMA T, TAKAYAMA T, HIEIDA H, WAKABAYASHI K JP3620838-B2 JP5263240-A MATSUSHITA ELEC IND CO LTD (MATU) JP5267570-A MATSUSHITA ELEC IND CO LTD (MATU) JP10173145-A MATSUSHITA DENKI SANGYO KK (MATU) JP10256085-A SHARP KK (SHAF) JP2001302400-A MURATA MFG CO LTD (MURA) JP2001313429-A TDK CORP (DENK) NOGUCHI T, YANO Y, SAITOU H, ABE H JP2002525426-A ASM MICROCHEMISTRY LTD (ASMI) LESKELAE M, RITALA M, HATANPAEAE T, HAENNINEN T, VEHKAMAEKI M CR DE10219651-A1 D.E. Kotecki, Integrated Ferroelectries, Vol. 16 (1997) S. 1-19 H. Tabata et al, Appl. Phys. Lett. 65(15) (1994) S. 1970-1972 JP 2001-302400 A Pat. Abstr. of Jp. US6747357-B2 E. D. Specht et al., "X-Ray Diffraction Measurement of the Effect of Layer Thickness on the Ferroelectric Transition in Epitaxial KTaO3/KNbO3 Multilayers", Physical Review Letters, May 11, 1998, pp. 4317-4320, vol. 80, No. 19, The American Physical Society. Hitoshi Tabata et al., "Formation of Artificial BaTiO3/SrTiO3 Supperlattices Using Pulsed Laser Deposition and Their Dielectric Properties", Applied Physics Letters, Oct. 10, 1994, pp. 1970-1972, American Institute of Physics. Jaemo IM et al., "Composition-Control of Magnetron-Sputter-Deposited (BaxSr1-x)Ti1-yO3&2 Thin Films for Voltage Turnable Devices", Applied Physics Letters, Jan. 31, 2000, pp. 625-627, vol. 76, No. 5, American Institute of Physics. Kenji Ueda et al., "Ferromagnetism in LaFeO3-LaCrO3 Superlattices", Science, May 15, 1998, pp. 1064-1066, vol. 280. M. Hong et al., "Epitaxial Cubic Gadolinium Oxide As A Dielectric For Gallium Arsenide Passivation", Science, Mar. 19, 1999, pp. 1897-1900, vol. 283. S. Hyun et al., "Effects of Strain on the Dielectric Properties of Tunable Dielectric SrTiO3 Thin Films", Applied Physics Letters, Jul. 9, 2001, pp. 254-256, vol. 79, No. 2, American Institute of Physics. UT DIIDW:2003811297 ER PT P PN US2003129505-A1; CN1428358-A; JP2003201324-A; TW594392-A; US7005216-B2; CN1264887-C; JP3929307-B2 TI Photo mask, for krypton fluoride excimer laser lithography, comprises naphthol structure with hydroxyl groups bound to naphthalene structure as structure of excimer laser photo absorbing material in aqueous alkali-soluble resin. AU SHIRAISHI H MIGITAKA S HATTORI T ARAI T SAKAMIZU T UTAKA S HATTORI K AE SHIRAISHI H (SHIR-Individual) MIGITAKA S (MIGI-Individual) HATTORI T (HATT-Individual) ARAI T (ARAI-Individual) SAKAMIZU T (SAKA-Individual) HITACHI LTD (HITA-C) HITACHI LTD (HITA-C) RENESAS TECHNOLOGY CORP (RENE-C) RENESAS TECHNOLOGY KK (RENE-C) GA 2003730431 AB NOVELTY - Photo mask has radiation-sensitive resist film formed on a mask substrate (1) as a light-shielding film of predetermined pattern (2a, 2b, 3a). A polymer matrix bringing about a coating property of the film is an aqueous alkali-soluble resin in which a naphthol structure with hydroxyl group(s) bound to a naphthalene nucleus is incorporated as a photo-absorber structure of a krypton fluoride excimer laser light; or a resin derivative. USE - For krypton fluoride (KrF) excimer laser lithography for processing semiconductor integrated circuit devices. ADVANTAGE - The photo mask can be produced with high accuracy and low defects in a smaller number of steps. DESCRIPTION OF DRAWING(S) - The figure shows a cross-sectional view of a photo mask showing the state of mounting this photo mask to a KrF excimer laser stepper. Mask substrate (1) Light-shielding pattern (2a, 2b, 3a) Holder (5) Pellicle (PE) Pellicle-attached frame (PEf) TF TECHNOLOGY FOCUS - POLYMERS - Preferred Materials: The polymer matrix has a condensation polymer of naphthalene derivatives of formula (1) with formaldehyde or hydroxynaphthaldehyde. At least 5% component of the naphthalene derivatives contains two hydroxyl or carboxyl groups as substituents. The polymer matrix may have a condensation polymer of naphthalene derivatives (1) with a hydroxymethyl-substituted compound of formula (2). The polymer matrix has a condensation polymer of naphthalene derivatives (1) with a hydroxymethyl-substituted compound of formula (3) or (4). The polymer matrix comprises an esterification product of naphthoic acid derivatives of formula (5) with a phenolic polymer or a polyphenol compound. A degree of esterification of the phenolic polymer or polyphenol compound is at least 30%.R1-R8 = OH, H, optionally substituted 1-4C alkyl, halo, phenyl, methoxy, ethoxyethyl, cyclopropyl, acetyl, or carboxyl (preferably contains one or two OH and at least 2 H).R9-R16 = hydroxymethyl, H, optionally substituted 1-4C alkyl, halo, OH, phenyl, methoxy, ethoxyethyl, cyclopropyl, or acetyl (preferably at least2 hydroxymethyl).R19-R26 = carboxyl, OH, H, optionally substituted 1-4C alkyl, halo, phenyl, methoxy, ethoxyethyl, cyclopropyl, or acetyl (preferably contains one carboxyl and at least one hydroxyl). DC A89 (Photographic, laboratory equipment, optical); G06 (Photosensitive compositions and bases, photographic processes); L03 (Electro-(in)organic, chemical features of electrical devices); P83 (Photographic processes, compositions); P84 (Other photographic); U11 (Semiconductor Materials and Processes); P75 (Typewriters, stamps, duplicators) MC A05-C01B2; A10-E05; A10-E10; A12-E07C; A12-L02B2; G06-D06; G06-E02; G06-F03C; G06-G18; L04-C05; U11-C04E2 IP G03F-009/00; G03C-001/76; C08G-016/02; B41N-003/00; G03F-070/04; C08G-010/02; G03F-001/08; G03F-007/023; G03F-007/004; C08L-061/14 PD US2003129505-A1 10 Jul 2003 G03F-009/00 200369 Pages: 22 English CN1428358-A 09 Jul 2003 C08G-016/02 200369 Chinese JP2003201324-A 18 Jul 2003 C08G-010/02 200369 Pages: 19 Japanese TW594392-A 21 Jun 2004 G03F-007/004 200506 Chinese US7005216-B2 28 Feb 2006 G03F-009/00 200616 English CN1264887-C 19 Jul 2006 C08G-016/02 200678 Chinese JP3929307-B2 13 Jun 2007 C08G-010/02 200740 Pages: 24 Japanese AD US2003129505-A1 US299692 20 Nov 2002 CN1428358-A CN151387 20 Nov 2002 JP2003201324-A JP400619 28 Dec 2001 TW594392-A TW124701 24 Oct 2002 US7005216-B2 US299692 20 Nov 2002 CN1264887-C CN151387 20 Nov 2002 JP3929307-B2 JP400619 28 Dec 2001 FD JP3929307-B2 Previous Publ. Patent JP2003201324 PI JP400619 28 Dec 2001 US299692 20 Nov 2002 CP US7005216-B2 JP04136854-A JP05289307-A US6653052-B2 TANAKA T (TANA-Individual); HASEGAWA N (HASE-Individual); SHIRAISHI H (SHIR-Individual); SATOH H (SATO-Individual) TANAKA T, HASEGAWA N, SHIRAISHI H, SATOH H JP3929307-B2 JP02222409-A JP09291127-A JP62172341-A JP08506600-W DN 34-0-0-0- CI R00001- UT DIIDW:2003730431 ER PT P PN US2002131032-A1; JP2002151391-A; US6753943-B2; JP3576960-B2 TI Scanning exposure apparatus used for production of devices, e.g. liquid crystal devices, image pickup devices, and magnetic heads, includes illumination optical system including scanning optical system, and driving mechanism. AU TSUJI T SUZUKI A AE TSUJI T (TSUJ-Individual) SUZUKI A (SUZU-Individual) CANON KK (CANO-C) CANON KK (CANO-C) GA 2003677868 AB NOVELTY - A scanning exposure apparatus comprises an illumination optical system having a slit-like section, on an original with the use of laser light; and a driving mechanism for relatively scanning moving an original and a substrate relative to the illumination region. The illumination optical system includes a scanning optical system. USE - The invention is used at a projection exposure step in a photolithographic process for transferring a pattern of a reticle on a photosensitive substrate. It is used for production of devices, e.g. semiconductor devices, liquid crystal devices, image pickup devices, and magnetic heads. ADVANTAGE - The invention allows very accurate projection of the whole reticle pattern on the substrate. DETAILED DESCRIPTION - A scanning exposure apparatus comprises an illumination optical system for defining an illumination region, having a slit-like section, on an original with the use of laser light; and a driving mechanism for relatively scanning moving an original and a substrate relative to the illumination region. The illumination optical system includes a scanning optical system for scanning a pupil plane of the illumination system with the laser light to produce a secondary light source, such that the illumination region is defined by light from the secondary light source. The width of the illumination region is W (mm), the scan speed of the original and/or the substrate is V (mm/sec), and the time necessary for defining the secondary light source is T (sec), a relation W/V = nT is satisfied. n = integer. An INDEPENDENT CLAIM is also included for a device manufacturing method comprising exposing a substrate with a pattern by use of a scanning exposure apparatus, and developing the exposed substrate. DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of the exposure apparatus. Excimer laser (1) Projection optical system (3) Movable stage (4) Half mirror (5) Piezoelectric device (9) TF TECHNOLOGY FOCUS - IMAGING AND COMMUNICATION - Preferred Component: The scanning exposure apparatus comprises an excimer laser (1) for supplying the laser light, and a projection optical system (3) for projecting a pattern of the original on the substrate. A wavelength maintaining mechanism is provided for maintaining the wavelength of the laser light from the excimer laser constant, where the excimer laser is a continuous emission type excimer laser. The projection optical system is provided by a lens system being made of a single glass material. The wavelength maintaining mechanism includes a detecting mechanism for detecting the wavelength of lase light from the excimer laser, and a resonator length changing mechanism for changing the resonator length of the excimer laser in accordance with an output of the detecting mechanism. The apparatus is adapted for formation of an image of a linewidth 0.13 microns (preferably 0.09 mum), and where a half bandwidth of a wavelength spectrum of the laser light is not more than 0.1 pm (preferably not more than 0.08 pm). The excimer laser is an argon fluoride excimer laser. TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Material: The lens system includes lens elements of at least 10, and where first one or first two of the lens elements in an order from the substrate side are made of calcium fluoride, calcium fluoride, or magnesium fluoride. DC L03 (Electro-(in)organic, chemical features of electrical devices); P82 (Photographic apparatus); P83 (Photographic processes, compositions); U11 (Semiconductor Materials and Processes); U14 (Memories, Film and Hybrid Circuits, Digital memories); P84 (Other photographic) MC L03-G05A; L04-C06; L04-D; U11-C04E1; U14-K01A1J IP G03C-005/00; G03B-027/60; H01L-021/027; G03F-007/20; G03F-007/22; G03B-027/42; G03B-027/54 PD US2002131032-A1 19 Sep 2002 G03C-005/00 200364 Pages: 19 English JP2002151391-A 24 May 2002 H01L-021/027 200364 Pages: 16 Japanese US6753943-B2 22 Jun 2004 G03B-027/42 200442 English JP3576960-B2 13 Oct 2004 H01L-021/027 200467 Pages: 16 Japanese AD US2002131032-A1 US986302 08 Nov 2001 JP2002151391-A JP344524 10 Nov 2000 US6753943-B2 US986302 08 Nov 2001 JP3576960-B2 JP344524 10 Nov 2000 FD JP3576960-B2 Previous Publ. Patent JP2002151391 PI JP344524 10 Nov 2000 US986302 08 Nov 2001 FS 355/53; 355/67 CP US6753943-B2 EP820132-A2 CANON KK (CANO); OHMI T (OHMI-Individual) OHMI T, TANAKA N, HIRAYAMA M JP09082605-A JP09148241-A JP09190966-A JP10163547-A CANON KK (CANO); OHMI T (OHMI-Individual) OHMI T, TANAKA N, HIRAYAMA M US4773750-A AMERICAN TELEPHONE & TELEGRAPH CO (AMTT); BRUNING J H (BRUN-Individual) BRUNING J H US4851978-A US4952945-A NIPPON KOGAKU KK (NIKR) US5170207-A US5253110-A NIKON CORP (NIKR) ICHIHARA Y, KUDO Y US5307207-A US5534970-A NIKON CORP (NIKR) US5757838-A CANON KK (CANO) HASEGAWA N, OZAWA K, KUROSAWA H, YOSHIMURA K JP3576960-B2 JP01309323-A JP06252022-A JP06267826-A JP06333801-A JP06349701-A JP07058393-A JP07142385-A JP07283131-A JP09082605-A JP10163547-A CANON KK (CANO); OHMI T (OHMI-Individual) OHMI T, TANAKA N, HIRAYAMA M JP2000003857-A CR US6753943-B2 Japanese Official Action issued Jan. 20, 2004, issued in corresponding Japanese patent appln. No. 2000-344524. UT DIIDW:2003677868 ER PT P PN US2003124778-A1; JP2003188183-A; KR2003052995-A; TW578243-A; US6900464-B2; TW200301940-A; KR812492-B1 TI Manufacture of thin film transistor device by forming first insulating film for covering first and second island-like semiconductor films, exposing negative photoresist film via mask, and from back surface side of transparent substrate. AU DOI S HOTTA K HIRANO T YANAI K AE FUJITSU DISPLAY TECHNOLOGIES KK (SHAF-C) FUJITSU DISPLAY TECHNOLOGIES CORP (SHAF-C) FUJITSU DISPLAY TECHNOLOGIES KK (SHAF-C) SHARP KK (SHAF-C) GA 2003670784 AB NOVELTY - A thin film transistor device is manufactured by: (i) forming a first insulating film (22) for covering a first island-like semiconductor film (24a) and a second island-like semiconductor film (24b); (ii) exposing a negative photoresist film via a mask (30a, 30b) that shields an overall region of the first island-like semiconductor film from a light; and (iii) exposing the negative photoresist film from a back surface side of the transparent substrate (21). USE - The manufacture of a thin film transistor device, useful for a liquid crystal display device (claimed), used in mobile terminal, viewfinder of the video camera, notebook-sized personal computer, and computer display, which require the high-quality and high-definition display. The thin film transistor device may also be applied to the organic electroluminescent display device. ADVANTAGE - The method prevents deteriorations in characteristics and a breakdown voltage, and also suppresses an operation of a parasitic thin film transistor at edge portions of an operating layer. It achieves the simplification of manufacture, and the further miniaturization of the device. DETAILED DESCRIPTION - Manufacture of a thin film transistor device, comprises: (a) forming a first-island-like semiconductor film and a second island-like semiconductor film on a surface of a transparent substrate; (b) forming a first insulating film for covering the first island-like semiconductor film and the second island-like semiconductor film; (c) forming a negative photoresist film on the first insulating film; (d) exposing the negative photoresist film via a mask that shields an overall region of the first island-like semiconductor film from a light; (e) exposing the negative photoresist film from a back surface side of the transparent substrate; (f) forming a resist pattern, which has an opening portion in an inner region with respect to a periphery of the first island-like semiconductor film, by developing the negative photoresist film; (g) etching the first insulating film in the opening portion of the resist pattern; (h) removing the resist pattern; (i) forming a second insulating film on an overall surface of the transparent substrate on a surface side and then forming a conductive film; (j) forming a first and a second mask pattern on the conductive film over the first and a second island-like semiconductor film, respectively; and (k) forming a first and a second gate electrode (29a, 29b) by etching the conductive film while using the first and second mask pattern as mask, respectively. INDEPENDENT CLAIMS are also included for: (a) a thin film transistor device, comprising a first and a second thin film transistor including a first and a second island-like semiconductor film, respectively, each having a pair of source/drain regions that are formed to put a channel region, a first and a second gate insulating film made of a first and a second insulating film formed on the channel region of the first and the second island-like semiconductor film, respectively, and a first and a second gate electrode made of a first and a second conductive film, formed on the first and the second gate insulating film, respectively, where the first and second thin film transistor are formed on a same substrate, the first and second thin film transistors have electric-field relaxation electrodes that are formed of the second and first conductive films, over edges of the first and second island-like semiconductor films on side portions, and on the first and second gate electrodes via the second and first insulating film, respectively; and (b) a liquid crystal display device, comprising a first and a second thin film transistor; a pixel electrode connected to source/drain regions of the second thin film transistor; and a storage capacitor bus line that intersects with the pixel electrode, where the storage capacitor bus line is formed of the first conductive film, and the second insulating film and the second conductive film connected to the pixel electrode are laminated in this order, in a partial area on the storage capacitor bus line. DESCRIPTION OF DRAWING(S) - The figure is a sectional view showing the manufacture of a thin film transistor device. Transparent substrate (21) Insulating film (22) First island-like semiconductor film (24a) Second island-like semiconductor film (24b) First and second gate electrode (29a, 29b) Mask (30a, 30b) TF TECHNOLOGY FOCUS - ELECTRONICS - Preferred Method: In exposing the negative photoresist film from the back surface side of the transparent substrate, a light employed in exposure is a g-line, an h-line, an i-line, an excimer laser or a UV light. Forming a pattern of the insulating film by selectively etching the insulating film over the second island-like semiconductor film, uses the semiconductor film as an etching stopper in etching the insulating film.Preferred Component: The first and second thin film transistors are n-type transistor, and the third thin film transistor is a p-channel type transistor. TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Material: The first and second island-like semiconductor films are formed of a polysilicon film. The semiconductor film is made of an amorphous silicon film. DC L03 (Electro-(in)organic, chemical features of electrical devices); U11 (Semiconductor Materials and Processes); U12 (Discrete Devices, e.g. LEDs, photovoltaic cells); P81 (Optics) MC L03-G05A; L04-C06B1; L04-C07; L04-C12; L04-E01; L04-E01E; U11-C18A1; U12-B03A IP H01L-021/00; H01L-021/84; H01L-021/336; G02F-001/1368; G09F-009/00; G09F-009/30; G09F-009/35; H01L-021/8238; H01L-027/08; H01L-027/092; H01L-029/786; G02F-001/136; H01L-029/04; H01L-031/036 PD US2003124778-A1 03 Jul 2003 H01L-021/00 200363 Pages: 58 English JP2003188183-A 04 Jul 2003 H01L-021/336 200363 Pages: 38 Japanese KR2003052995-A 27 Jun 2003 G02F-001/136 200373 TW578243-A 01 Mar 2004 H01L-021/336 200457 Chinese US6900464-B2 31 May 2005 H01L-029/04 200536 English TW200301940-A 16 Jul 2003 H01L-021/336 200556 Chinese KR812492-B1 11 Mar 2008 G02F-001/136 200924 AD US2003124778-A1 US314880 09 Dec 2002 JP2003188183-A JP388306 20 Dec 2001 KR2003052995-A KR080612 17 Dec 2002 TW578243-A TW136718 19 Dec 2002 US6900464-B2 US314880 09 Dec 2002 TW200301940-A TW136718 19 Dec 2002 KR812492-B1 KR080612 17 Dec 2002 FD KR812492-B1 Previous Publ. Patent KR2003052995 PI JP388306 20 Dec 2001 US314880 09 Dec 2002 FS 257/59-62; 257/72; 349/38-42; 438/149 CP US6900464-B2 JP08250742-A JP2002305112-A US5953085-A US6133967-A LG ELECTRONICS INC (GLDS) MOON D G US20020021378-A1 US20020190321-A1 US6278131-B1 SEL SEMICONDUCTOR ENERGY LAB (SEME) YAMAZAKI S, KOYAMA J, SHIBATA H, FUKUNAGA T US6593592-B1 SEMICONDUCTOR ENERGY LAB (SEME) YAMAZAKI S, IKEDA T, FUKUNAGA K US6590411-B2 LG PHILIPS LCD CO LTD (GLDS) LEE M US6618033-B2 TAKAFUJI Y (TAKA-Individual) TAKAFUJI Y KR812492-B1 JP08250742-A JP10012882-A TOSHIBA KK (TOKE) FUKUDA K KR97016712-A LG ELECTRONICS INC (GLDS) MOON D G KR99009248-A UT DIIDW:2003670784 ER PT P PN JP2003206197-A TI Calcium fluoride crystal for optical element used in exposure apparatus, has optical transmittance that decreases by predetermined percentage after irradiation of gamma rays. AE CANON KK (CANO-C) GA 2003667467 AB NOVELTY - A calcium fluoride single crystal has an optical transmittance with a decrease per thickness 30 mm in wavelength 140 nm after irradiation of gamma rays of dose 1 x 106 roentgen per unit time for 1 hour, of at most 12% w.r.t the decrease in transmittance before irradiation. USE - Used as a calcium fluoride single crystal used for optical elements (claimed), e.g. window material, prisms, diffraction gratings, lens, multi-lens, lens array, lenticular lens, binary optical elements and their composites used with light source e.g. fluoride excimer laser, argon fluoride excimer laser, krypton fluoride excimer laser, yttrium aluminum garnet (YAG) laser, mercury lamp and xenon lamp in projection optical system of exposure apparatus (claimed) used for manufacturing devices (claimed) e.g. semiconductor device such as large scale integrated (LSI) device, very large scale integrated (VLSI) device, semiconductor chip, charge coupled device (CCD), liquid crystal display (LCD) device, magnetic sensor and thin-film magnetic head, used in electronic devices. ADVANTAGE - The crystalline substance exhibits good durability w.r.t the UV radiation from the excimer laser, thus enabling manufacturing of optical element with high reliability and durability at low cost. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) an optical element; (2) an exposure apparatus; (3) device manufacture; (4) device manufacture by exposure process; (5) testing of a calcium fluoride single crystal; (6) the manufacture of a crystalline substance; and (7) the manufacture of optical element. DESCRIPTION OF DRAWING(S) - The figure shows the graph explaining the decrease in transmittance of fluoride crystal. (Drawing includes non-English language text). DC L03 (Electro-(in)organic, chemical features of electrical devices); P81 (Optics); P84 (Other photographic); S02 (Engineering Instrumentation, recording equipment, general testing methods); U11 (Semiconductor Materials and Processes); V07 (Fibre-optics and Light Control); V08 (Lasers and Masers) MC L03-B05M; L03-F02; L03-G04A; L04-E05F; S02-J04A5; S02-J04A9; U11-C04C2; U11-C18D; V07-F02B; V08-A04B IP C30B-029/12; G01M-011/00; G02B-001/02; G03F-007/20; H01L-021/027 PD JP2003206197-A 22 Jul 2003 C30B-029/12 200363 Pages: 15 AD JP2003206197-A JP000417 07 Jan 2002 PI JP000417 07 Jan 2002 UT DIIDW:2003667467 ER PT P PN WO2003050621-A; US2003107720-A1; WO2003050621-A1; AU2002343737-A1; US6744494-B2; EP1463978-A1 TI Light exposure compensating apparatus used in e.g. lithography tool, has mask filter with oblong opaque elements that are rotatable around longitudinal axis to adjust ratio between irradiated and non-irradiated areas. AU MALTABES J MAUTZ K CHARLES A AE MALTABES J (MALT-Individual) MAUTZ K (MAUT-Individual) CHARLES A (CHAR-Individual) MOTOROLA INC (MOTI-C) MOTOROLA INC (MOTI-C) GA 2003658944 AB NOVELTY - A mask filter with oblong transparent elements (31) and oblong opaque elements (32), is provided between a light source and a photosensitive layer on a semiconductor wafer. The opaque elements are rotatable around a longitudinal axis, to define the area masked by the projection of the opaque element on the layer and to continuously adjust ratio between irradiated and non-irradiated areas on the layer. USE - For compensating light exposure in continuous wave and excimer laser based lithographic tool for manufacturing integrated circuit and also in I-line tool, telescope and photon counting device. ADVANTAGE - The light attenuation is adapted to actual requirements easily. Maximizes throughput and laser lifetime. Achieves dose control without producing optical error such as chromatic aberration. The mask filter is not subject to wear or exposure weakening. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for method for compensating light exposure. DESCRIPTION OF DRAWING(S) - The figure shows the mask element. oblong transparent element (31) oblong opaque elements (32) DC P82 (Photographic apparatus); P84 (Other photographic); U11 (Semiconductor Materials and Processes) MC U11-C04D; U11-C04E1; U11-C04E2 IP G03B-027/00; G03F-007/00; G03F-007/20; G03B-027/42; G03B-027/72 PD WO2003050621-A US2003107720-A1 12 Jun 2003 G03B-027/00 200362 Pages: 7 WO2003050621-A1 19 Jun 2003 G03F-007/20 200362 English AU2002343737-A1 23 Jun 2003 G03F-007/20 200420 US6744494-B2 01 Jun 2004 G03B-027/72 200436 EP1463978-A1 06 Oct 2004 G03F-007/20 200465 English AD US2003107720-A1 US012989 07 Dec 2001 WO2003050621-A1 WOUS36836 14 Nov 2002 AU2002343737-A1 AU343737 14 Nov 2002 EP1463978-A1 EP780698 14 Nov 2002 FD AU2002343737-A1 Based on Patent WO2003050621 EP1463978-A1 Based on Patent WO2003050621 EP1463978-A1 PCT application Application WOUS36836 PI US012989 07 Dec 2001 DS WO2003050621-A1: (National): AE; AG; AL; AM; AT; AU; AZ; BA; BB; BG; BR; BY; BZ; CA; CH; CN; CO; CR; CU; CZ; DE; DK; DM; DZ; EC; EE; ES; FI; GB; GD; GE; GH; GM; HR; HU; ID; IL; IN; IS; JP; KE; KG; KP; KR; KZ; LC; LK; LR; LS; LT; LU; LV; MA; MD; MG; MK; MN; MW; MX; MZ; NO; NZ; OM; PH; PL; PT; RO; RU; SC; SD; SE; SG; SI; SK; SL; TJ; TM; TN; TR; TT; TZ; UA; UG; UZ; VC; VN; YU; ZA; ZM; ZW (Regional): AT; BE; BG; CH; CY; CZ; DE; DK; EA; EE; ES; FI; FR; GB; GH; GM; GR; IE; IT; KE; LS; LU; MC; MW; MZ; NL; OA; PT; SD; SE; SK; SL; SZ; TR; TZ; UG; ZM; ZW EP1463978-A1: (Regional): AL; AT; BE; BG; CH; CY; CZ; DE; DK; EE; ES; FI; FR; GB; GR; IE; IT; LI; LT; LU; LV; MC; MK; NL; PT; RO; SE; SI; SK; TR FS x; 35553; 35567; 35571; 43030; 430396; 4305 CP WO2003050621-A EP1291721-A1 ASML NETHERLANDS BV (ASML) LEENDERS M H A, MOORS J H J, LOOPSTRA E R, GILISSEN N J JP4080760-A FUJITSU LTD (FUIT) JP5190444-A FUJITSU LTD (FUIT) JP11219893-A NIKON CORP (NIKR) JP61104622-A NEC CORP (NIDE) US6013401-A SVG LITHOGRAPHY SYSTEMS INC (SVGL-Non-standard) CALLAN D, GALBURT D N, MCCULLOUGH A W, GOVIL P K WO2003050621-A1 EP1291721-A1 ASML NETHERLANDS BV (ASML) LEENDERS M H A, MOORS J H J, LOOPSTRA E R, GILISSEN N J JP4080760-A FUJITSU LTD (FUIT) JP5190444-A FUJITSU LTD (FUIT) JP11219893-A NIKON CORP (NIKR) JP61104622-A NEC CORP (NIDE) US6013401-A SVG LITHOGRAPHY SYSTEMS INC (SVGL-Non-standard) CALLAN D, GALBURT D N, MCCULLOUGH A W, GOVIL P K US6744494-B2 EP1291721-A1 ASML NETHERLANDS BV (ASML) LEENDERS M H A, MOORS J H J, LOOPSTRA E R, GILISSEN N J EP1292721-A2 SURFACE ENGINEERED PROD CORP (SURF-Non-standard) TZATZOV K K, FISHER G A, PRESCOTT R, CHEN Y, ZHENG H, SUBRAMANIAN C G, WYSIEKIERSKI A G, MENDEZ ACEVEDO J M, GORODETSKY A S, REDMOND E J JP4080760-A FUJITSU LTD (FUIT) JP5190444-A FUJITSU LTD (FUIT) JP11219893-A NIKON CORP (NIKR) JP61104622-A NEC CORP (NIDE) US5437946-A NIKON PRECISION INC (NIKR) MCCOY J H US6013401-A SVG LITHOGRAPHY SYSTEMS INC (SVGL-Non-standard) CALLAN D, GALBURT D N, MCCULLOUGH A W, GOVIL P K CR WO2003050621-A PATENT ABSTRACTS OF JAPAN vol. 010, no. 285 (E-441), 27 September 1986 (1986-09-27) & JP 61 104622 A (NEC CORP), 22 May 1986 (1986-05-22) PATENT ABSTRACTS OF JAPAN vol. 016, no. 301 (P-1379), 3 July 1992 (1992-07-03) & JP 04 080760 A (FUJITSU LTD), 13 March 1992 (1992-03-13) PATENT ABSTRACTS OF JAPAN vol. 017, no. 613 (E-1458), 11 November 1993 (1993-11-11) & JP 05 190444 A (FUJITSU LTD), 30 July 1993 (1993-07-30) PATENT ABSTRACTS OF JAPAN vol. 1999, no. 13, 30 November 1999 (1999-11-30) & JP 11 219893 A (NIKON CORP), 10 August 1999 (1999-08-10) WO2003050621-A1 PATENT ABSTRACTS OF JAPAN vol. 010, no. 285 (E-441), 27 September 1986 (1986-09-27) & JP 61 104622 A (NEC CORP), 22 May 1986 (1986-05-22) PATENT ABSTRACTS OF JAPAN vol. 1999, no. 13, 30 November 1999 (1999-11-30) & JP 11 219893 A (NIKON CORP), 10 August 1999 (1999-08-10) PATENT ABSTRACTS OF JAPAN vol. 016, no. 301 (P-1379), 3 July 1992 (1992-07-03) & JP 04 080760 A (FUJITSU LTD), 13 March 1992 (1992-03-13) PATENT ABSTRACTS OF JAPAN vol. 017, no. 613 (E-1458), 11 November 1993 (1993-11-11) & JP 05 190444 A (FUJITSU LTD), 30 July 1993 (1993-07-30) US6744494-B2 International Search Report PCT/US02/36836. PCT/US02/36836 PCT Search Report mailed Apr. 11, 2003. EP1463978-A1 See references of WO 03050621A1 UT DIIDW:2003658944 ER PT P PN US2003087188-A1; JP2003183329-A; KR2003034671-A; US6803172-B2; TW591243-A; KR465866-B; JP4107937-B2 TI New organic anti-reflective polymer for anti-reflective coating composition, comprises specific vinyl aromatic group and acrylic ester group. AU JUNG M CHOI J JUNG M H CHOI J I CHUNG M H AE HYNIX SEMICONDUCTOR INC (HYNX-C) HYUNDAI ELECTRONICS IND CO LTD (HYNX-C) HYNIX SEMICONDUCTOR INC (HYNX-C) HYNIX SEMICONDUCTOR INC (HYNX-C) HYNIX SEMICONDUCTOR INC (HYNX-C) HYUNDAI ELECTRONICS IND CO LTD (HYNX-C) GA 2003644912 AB NOVELTY - An organic anti-reflective polymer is new. USE - For anti-reflective coating composition used in semiconductor device fabrication (claimed). ADVANTAGE - The inventive polymer prevents back reflection of lower film layers and eliminates standing waves that occur by changes in the thickness of photoresist and by light, during a process for forming ultrafine patterns that use photoresist for lithography by using 193 nm argon-fluoride laser. DETAILED DESCRIPTION - An organic anti-reflective polymer of formula (1) or (2) is new. Ra, Rb = H or Me; R', R'' = H, OH, OCOCH3, COOH, CH2OH, 1-6C alkyl, or 1-6C alkoxy alkyl; n = 1-5; x, y = mole fraction from 0.01-0.99; R10, R11 = 1-10C alkoxy; R12 = H or Me. INDEPENDENT CLAIMS are also included for: (a) an anti-reflective coating composition comprising the inventive polymer; (b) a method for forming an anti-reflective coating comprising dissolving an anti-reflective composition in an organic solvent, coating the composition on a wafer, and subjecting the wafer to a hard baking; and (c) a semiconductor device fabricated using the anti-reflective coating. TF TECHNOLOGY FOCUS - POLYMERS - Preparation: The inventive polymer is prepared by dissolving methoxystyrene monomer and hydroxyalkylacrylate monomer in a solvent and polymerizing the monomers in the presence of a polymerization initiator in the solvent.Preferred Condition: The polymerization is carried out at 50-90degreesC. The hard baking is carried out at 100-300degreesC. TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The solvent is tetrahydrofuran, toluene, benzene, methylethylketone, and/or dioxane. The polymerization initiator is 2,2'-azobisisobutyronitrile, acetylperoxide, lauryl peroxide, and/or t-butylperoxide. The organic solvent (200-5000 wt.%) is ethyl-3-ethoxypropionate, methyl 3-methoxypropionate, cyclohexanone, or propyleneglycolmethylether acetate. EXAMPLE - A flask was charged with 0.1 mole methoxystyrene monomer/0.1 mole 2-hydroxyethylmethacrylate while stirring and 300 g separately prepared tetrahydrofuran was added to form a mixture. The mixture was added with 0.1-0.3 g 2,2'-azobisisobutyronitrile to polymerize at 60-75degreesC under a nitrogen atmosphere for 5-20 hours. The obtained solution was precipitated with an ethyl ether or n-hexane solvent and filtered and dried to obtain a poly(methoxystyrene- (2-hydroxyethylmethacrylate)) resin of formula (10) (yield: 83%). DC A89 (Photographic, laboratory equipment, optical); G06 (Photosensitive compositions and bases, photographic processes); L03 (Electro-(in)organic, chemical features of electrical devices); P83 (Photographic processes, compositions); U11 (Semiconductor Materials and Processes); P81 (Optics); P84 (Other photographic) MC A04-C; A04-F06E4; A12-E07C; A12-L02B2; G06-A; G06-D06; L03-G; L03-G06; U11-A09; U11-C04A1H; U11-C04E1 IP G03C-001/76; C08F-212/14; C08F-002/04; C08F-220/28; C08L-025/18; C08L-029/10; C08L-033/14; C09D-123/02; C09D-125/14; C09D-133/06; C09D-005/00; H01L-021/312; G03F-007/11; G02B-001/11; G02B-001/10 PD US2003087188-A1 08 May 2003 G03C-001/76 200361 Pages: 6 English JP2003183329-A 03 Jul 2003 C08F-212/14 200361 Pages: 7 Japanese KR2003034671-A 09 May 2003 G03F-007/11 200361 US6803172-B2 12 Oct 2004 G03C-001/76 200467 English TW591243-A 11 Jun 2004 G02B-001/11 200506 Chinese KR465866-B 13 Jan 2005 G03F-007/11 200535 JP4107937-B2 25 Jun 2008 G02B-001/10 200844 Pages: 11 Japanese AD US2003087188-A1 US271877 16 Oct 2002 JP2003183329-A JP308186 23 Oct 2002 KR2003034671-A KR066346 26 Oct 2001 US6803172-B2 US271877 16 Oct 2002 TW591243-A TW123560 14 Oct 2002 KR465866-B KR066346 26 Oct 2001 JP4107937-B2 JP308186 23 Oct 2002 FD KR465866-B Previous Publ. Patent KR2003034671 JP4107937-B2 Previous Publ. Patent JP2003183329 PI KR066346 26 Oct 2001 US271877 16 Oct 2002 FS 430/270.1; 430/271.1; 430/330; 430/905; 526/219.6; 526/320; 526/346 CP US6803172-B2 US4424270-A HOECHST AG (FARH) ERDMANN F, SIMON U US4822718-A BREWER SCIENCE INC (BREW-Non-standard) BARNES G A, BREWER T L, FLAIM T D, MOSS M G US5525457-A NIPPON GOSEI GOMU KK (JAPS) US5674648-A BREWER SCI INC (BREW-Non-standard) US5728506-A AMERICAN TELEPHONE & TELEGRAPH CO (AMTT) KOMETANI J M US20020128410-A1 JP4107937-B2 JP2000063444-A UT DIIDW:2003644912 ER PT P PN US2003004289-A1; JP2002348333-A; KR2002082396-A; US6762268-B2; TW591329-A; KR451643-B TI Acetal group containing norbornene copolymer for photoresist composition useful in lithography process for making very large scale integrated semiconductor with excimer laser. AU SHIN J H MOON B S HAN O YOON K B HAN E S YIM J H HAN U MUN B S YOON G B HAN W AE SAMSUNG ELECTRONICS CO LTD (SMSU-C) SAMSUNG ELECTRONICS CO LTD (SMSU-C) SAMSUNG ELECTRONICS CO LTD (SMSU-C) GA 2003625369 AB NOVELTY - An acetal group containing norbornene copolymer of formula (1), is new. USE - For photoresist composition useful in lithography processes for making very large scale integrated semiconductor with electron beam or deep UV, as well as with excimer laser. ADVANTAGE - The novel norbornene-based copolymer has excellent transparency, resolution, sensitivity, dry etching resistance and adhesion to substrate. The preparation of the norbornene-based copolymer is simple and easy. DETAILED DESCRIPTION - An acetal group containing norbornene copolymer of formula (1), is new. R1 = 1-12C alkyl group; R2-R5 = H, fluorine, methyl or trifluoromethyl; R6 and R7 = H, 1-10C linear or branched alkyl group, -(CH2)t-R8, -(CH2)t-OR8, -(CH2)t-(O)OR8, -(CH2)t-C(O)R8, -(CH2)t-OC(O)R8, -(CH2)t-OC(O)OR8 or -(CH2)t-C(O)OCH2OR8; R8 = H, fluorine, 1-12C alkyl group or cyclic alkyl group containing ketone group, or R6 and R7 are optionally attached to each to form a ring; t = 0-6; l/(l+m+n) = 0.1-0.99; m/(l+m+n) = 0-0.3; n/(l+m+n) = 0.01-0.6; and o-s = 0-2. INDEPENDENT CLAIMS are included for the following: (1) preparation of norbornene-based copolymer which involves copolymerizing a monomer of formula (2) and a monomer of formula (3) in the presence of a palladium (II) catalyst in water or organic solvents comprising water, and acetalyzing at least a portion of acidic functional groups of the monomer of formula (2); and (2) photoresist composition which contains above norbornene copolymer of formula (1), a photo acid generator and an organic solvent. TF TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preparation: Palladium chloride (in g) (1) and mixed solution (30) of water-tetrahydrofuran (THF) were added to a reactor into which 5-norbornene-2-carboxylic acid (NCA) (42) and 5-norbornene-2-methanol (NM) (18) were added as comonomers. The components were reacted at 40degreesC for 24 hours under nitrogen atmosphere. After reaction completion, the polymerized reaction mixture was diluted with THF solvent, precipitated in water-ethanol mixture (1:1), filtered and dried to form poly(NCA/NM) polymer having number average molecular weight of 2600 daltons in 80% yield. The poly(NCA/NM) copolymer (30) was dissolved in THF (360 ml), followed by addition of triethylamine (8.8) and chloromethylethylether (10.6). The mixture was reacted under nitrogen atmosphere for 3-5 hours. After reaction completion, the polymerized reaction mixture was precipitated in water, filtered and dried to provide poly(5-norbornene-2-ethoxy methyl carboxylate (ANCA)/NCA/NM) polymer having number average molecular weight of 2800 in 96% yield.Preferred Process: Alternatively, the norbornene based copolymer is prepared by copolymerizing a monomer of formula (2), a monomer of formula (3) and an acetal-substituted norbornene based monomer of formula (4) in the presence of a palladium (II) catalyst in water or organic solvents comprising water.Preferred Catalyst: The palladium (II) catalyst is represented by formula (5).X = halogen atom or 1-10C alkyl group;R' = 6-12C allyl group;R'' = nitrile or cyclodiene; andn = 1 or 2. EXAMPLE - Poly(5-norbornene-2-ethoxy methyl carboxylate (ANCA)/NCA/NM) polymer having number average molecular weight of 2800, was prepared. The copolymer obtained was dissolved in cyclohexane at a concentration of 12 wt.%. Triphenylsulfonium trifluoromethane sulfonate was added (in weight parts) (3) as photo acid generator based on copolymer (100). The mixture was dissolved and filtered to provide a resist solution. The resist solution was spin-coated on a silicon wafer and pre-baked at 110 degreesC. The wafer was then exposed to argon fluoride excimer laser and post-baked at 120 degreesC. The photoresist was finally developed using 2.38 wt.% of tetramethyl ammonium hydroxide for 60 seconds to form a photoresist pattern. DC A25 (Polyurethanes, polyethers); A89 (Photographic, laboratory equipment, optical); G06 (Photosensitive compositions and bases, photographic processes); L03 (Electro-(in)organic, chemical features of electrical devices); U11 (Semiconductor Materials and Processes); P84 (Other photographic) MC A02-A06; A04-E10C; A04-F; A10-E02; A12-E07C; A12-L02B2; G06-D04; G06-D06; G06-F03C; G06-F03D; L04-C05; U11-A06A IP C08F-136/00; C08F-232/00; C08F-004/26; C08F-008/00; G03F-007/039; H01L-021/027; G03F-007/004; C08F-120/04 PD US2003004289-A1 02 Jan 2003 C08F-136/00 200359 Pages: 11 English JP2002348333-A 04 Dec 2002 C08F-232/00 200359 Pages: 15 Japanese KR2002082396-A 31 Oct 2002 G03F-007/004 200359 US6762268-B2 13 Jul 2004 C08F-120/04 200446 English TW591329-A 11 Jun 2004 G03F-007/004 200506 Chinese KR451643-B 08 Oct 2004 G03F-007/004 200512 AD US2003004289-A1 US126985 22 Apr 2002 JP2002348333-A JP119638 22 Apr 2002 KR2002082396-A KR085022 26 Dec 2001 US6762268-B2 US126985 22 Apr 2002 TW591329-A TW104788 13 Mar 2002 KR451643-B KR085022 26 Dec 2001 FD KR451643-B Previous Publ. Patent KR2002082396 PI KR021602 21 Apr 2001 KR085022 26 Dec 2001 US126985 22 Apr 2002 FS 526/171; 526/280; 526/282 CP US6762268-B2 EP1127900-A1 SHIPLEY CO LLC (SHIL) SZMANDA C R, BARCLAY G G, TREFONAS P, YUEH W US6159655-A FUJI PHOTO FILM CO LTD (FUJF) SATO K US6160068-A US6369181-B1 HYUNDAI ELECTRONICS IND CO LTD (HYNX) JUNG M H, JUNG J C, BOK C K, BAIK K H US6426171-B1 HYUNDAI ELECTRONICS IND CO LTD (HYNX) JUNG M H, JUNG J C, LEE G S, BAIK K H US6465147-B1 CR US6762268-B2 Okoroanyanwu et al. Chemistry of Materials (1998), 10(11), 3319-3327.* Okoroanyanwu et al. Chemistry of Materials (1998), 10(11), 3328-3333.* Okoroanyanwu et al. Journal of Molecular Catalysis A: Chemical 133 (1998), 93-114. DN 3-0-0-0-; 36-0-0-0- CI R01740-; R00913- UT DIIDW:2003625369 ER PT P PN US6569715-B1 TI Formation of semiconductor device, e.g. metal oxide semiconductor field effect transistor, involves annealing, patterning and removing portions of large grain polysilicon film and doped layer, and forming gate on gate oxide layer. AU FORBES L AE MICRON TECHNOLOGY INC (MICR-Non-standard) GA 2003615438 AB NOVELTY - A semiconductor device is formed by forming a large grain silicon film with crystals; forming a first doped layer; annealing the large grain silicon film and the first doped layer; patterning and removing portions of the film and the first and second doped layers to form a vertical device stack; forming a gate oxide layer; and forming a first gate on the gate oxide layer. USE - Used for forming a semiconductor device, particularly a thin film metal-oxide-semiconductor field effect transistor. ADVANTAGE - The process provides a vertical thin film metal oxide semiconductor field effect transistor with improved electrical function due to the formation of the transistor in a single grain polysilicon. DETAILED DESCRIPTION - The formation of a semiconductor device comprises: (a) forming a large grain silicon film comprising crystals having grain boundaries primarily normal relative to a surface of a substrate (22); (b) forming a first doped layer in an upper portion of the large grain silicon film; (c) annealing the large grain silicon film and the first doped layer to simultaneously activate the first doped layer and form a second doped layer in a lower portion of the large grain silicon film, where an undoped region exists between the first doped layer and the second doped layer of the large grain silicon film; (d) patterning and removing portions of the large grain silicon film and the first and second doped layers to form a vertical device stack (28), where the undoped region is over the second doped layer and the first doped layer is over the undoped region; (e) forming a gate oxide layer (30b) on at least one side of the device stack; and (f) forming a first gate over the gate oxide layer on the at least one side of the device stack. DESCRIPTION OF DRAWING(S) - The figure shows a cross-sectional view of the thin film transistor. Substrate (22) Vertical device stack (28) Gate oxide layer (30b) TF TECHNOLOGY FOCUS - ELECTRONICS - Preferred Process: The large grain silicon film is formed by depositing an amorphous silicon film on the substrate and recrystallizing the film; or by forming a silicon nucleus on the substrate and depositing silicon by vapor-phase growth onto the nucleus. The recrystallization comprises irradiation of the amorphous silicon film with a laser. The patterned oxide layer is formed by, forming an oxide layer on the substrate and wet etching the oxide layer using photolithographic template. The first doped layer is formed using ion implantation. The gate oxide layer is formed using thermal oxidation. The doped polysilicon local interconnect layer is formed by chemical or physical vapor deposition; or by epitaxial growth. Patterning is done by dry etching the recrystallized silicon film using a photolithographic template. Dry etching is plasma etching or reactive ion etching.Preferred Condition: The amorphous silicon film is deposited by low-pressure chemical vapor deposition at below 580degreesC. The large grain silicon film has a height of 10000 Angstrom and a size of ca. 1 micronsm. The first doped layer has a height of 1000-2000, preferably 1500 Angstrom. The second doped layer has a height of 1000-2000, preferably 1500 Angstrom. TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Substrate: The substrate is a quartz substrate or a glass substrate. TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Substrate: The substrate may also be a silicon dioxide substrate. TECHNOLOGY FOCUS - INSTRUMENTATION AND TESTING - Preferred Laser: The laser is an argon fluoride laser or a xenon chloride laser. The laser is an argon fluoride laser or a xenon chloride laser. DC L03 (Electro-(in)organic, chemical features of electrical devices); U11 (Semiconductor Materials and Processes); U12 (Discrete Devices, e.g. LEDs, photovoltaic cells) MC L03-G04A; L04-C02; L04-C06; L04-C12A; L04-C16A; L04-E01B1; U11-C03D; U11-C03J2A; U11-C05F5; U11-C18A1; U12-B03A IP H01L-021/332 PD US6569715-B1 27 May 2003 H01L-021/332 200358 Pages: 13 English AD US6569715-B1 US471279 23 Dec 1999 FD US6569715-B1 Div ex Application US229891 US6569715-B1 Div ex Patent US6049106 PI US229891 14 Jan 1999 US471279 23 Dec 1999 FS 438/135; 438/137; 438/138; 438/197; 438/199; 438/206; 438/212; 438/268; 438/564 CP US6569715-B1 US4449285-A US4649624-A US4954454-A US5233207-A NIPPON STEEL CORP (YAWA) ANZAI K US5315140-A US5382549-A TOSHIBA KK (TOKE) OSHIMA J, MOTOSHIMA T US5385863-A NEC CORP (NIDE) TATSUMI T, SAKAI A US5491107-A US5773358-A US5792700-A MICRON TECHNOLOGY INC (MICR-Non-standard) MANNING M, TURNER C L US5847406-A MICRON SEMICONDUCTOR INC (MICR-Non-standard) DENNISON C H, MANNING M US6127230-A US6194254-B1 SEMICONDUCTOR ENERGY LAB (SEME) TAKEMURA Y US6362511-B1 UT DIIDW:2003615438 ER PT P PN US2003082923-A1; CN1419272-A; JP2003142469-A; KR2003036054-A; TW564480-A; CN1203536-C; KR544226-B1 TI Radical oxidation apparatus for radical oxidation of silicon wafer, comprises vacuum chamber having heated chuck for holding silicon wafer, and for maintaining temperature of silicon wafer, and oxygen dissociation mechanism. AU ONO Y YOSHI O AE ONO Y (ONOY-Individual) SHARP KK (SHAF-C) SHARP KK (SHAF-C) GA 2003596972 AB NOVELTY - A radical oxidation apparatus for radical oxidation of a silicon wafer comprises a vacuum chamber having a heated chuck for holding the silicon wafer, and for maintaining the temperature of the silicon wafer at 400-500degreesC; an oxidation gas source; and an oxygen dissociation mechanism for dissociating the oxygen-containing gas into a dissociation product containing oxygen in a O(1D) state. USE - Used for the radical oxidation of a silicon wafer (claimed), used in the production of integrated circuits. ADVANTAGE - A silicon substrate is rapidly oxidized to form a silicon dioxide layer at a relatively low temperature, without causing diffusion of undesirable components into the silicon substrate. DETAILED DESCRIPTION - A radical oxidation apparatus (50) for radical oxidation of a silicon wafer comprises a vacuum chamber (52) having a heated chuck (54) for holding the silicon wafer (56), and for maintaining the temperature of the silicon wafer at 400-500degreesC; an oxidation gas source (58) for providing an oxygen-containing gas to oxidize the silicon wafer in the vacuum chamber; an oxygen dissociation mechanism for dissociating the oxygen-containing gas into a dissociation product containing oxygen in a O(1D) state; and a dissociation product moving mechanism for moving the dissociation product through the vacuum chamber. An INDEPENDENT CLAIM is also included for the radical oxidation of silicon, where the silicon is in the form of a wafer of semiconductor-pure silicon, comprising placing a silicon wafer in a heated chuck, where the heated chuck is contained in a vacuum chamber, which is maintained at a pressure of 1-2000 mTorr; introducing an oxidizing gas into an oxygen dissociation mechanism; dissociating the oxidizing gas into a dissociated product containing oxygen in a O(1D) state; passing the oxygen in its O(1D) state over the heated silicon wafer; and maintaining the silicon wafer in the vacuum chamber for between 1-60 minutes to form a layer of silicon dioxide on the wafer. DESCRIPTION OF DRAWING(S) - The figure depicts a radical oxidation apparatus for performing radical oxidation with a UV laser. Radical oxidation apparatus (50) Vacuum chamber (52) Heated chuck (54) Silicon wafer (56) Oxidation gas source (58) Laser (62) TF TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Gas: The oxygen-containing gas is oxygen, ozone, and nitrous oxide. TECHNOLOGY FOCUS - ELECTRONICS - Preferred Component: The oxygen dissociation mechanism includes an UV light source, including a mercury vapor lamp, an excimer lamp, an inductively coupled plasma generator, or a laser beam generator. The inductively coupled plasma generator includes a plasma gas source, including a gas source providing an UV-producing plasma gas from plasma gases consisting of helium, argon; and a radio frequency generator for operating at 13.56 MHz at a power of between 200-700 watts, where the inductively coupled plasma generator operates at an internal pressure of between 30-70 mTorr.Preferred Parameter: The laser beam generator is a pulsed argon fluoride excimer laser (62), which generates a beam having a wavelength of 193 nm. It is a continuous wave krypton laser, which generates a beam having a wavelength of 406.7 nm. DC L03 (Electro-(in)organic, chemical features of electrical devices); U11 (Semiconductor Materials and Processes) MC L04-D; U11-C03A; U11-C05B1; U11-C05B7; U11-F02A2 IP H01L-021/31; H01L-021/469; H01L-021/316; H01L-021/20; H01L-021/02 PD US2003082923-A1 01 May 2003 H01L-021/31 200356 Pages: 6 English CN1419272-A 21 May 2003 H01L-021/316 200356 Chinese JP2003142469-A 16 May 2003 H01L-021/31 200356 Pages: 7 Japanese KR2003036054-A 09 May 2003 H01L-021/31 200358 TW564480-A 01 Dec 2003 H01L-021/20 200431 Chinese CN1203536-C 25 May 2005 H01L-021/316 200641 Chinese KR544226-B1 23 Jan 2006 H01L-021/02 200682 AD US2003082923-A1 US020424 30 Oct 2001 CN1419272-A CN155856 30 Oct 2002 JP2003142469-A JP305720 21 Oct 2002 KR2003036054-A KR066570 30 Oct 2002 TW564480-A TW124518 23 Oct 2002 CN1203536-C CN155856 30 Oct 2002 KR544226-B1 KR066570 30 Oct 2002 FD KR544226-B1 Previous Publ. Patent KR2003036054 PI US020424 30 Oct 2001 UT DIIDW:2003596972 ER PT P PN US6526997-B1 TI Ultra clean method for manufacturing an integrated circuit device, uses combination of high energy light source and electrostatic bias for removing impurities, e.g. particles from integrated circuits. AU HENLEY F J AE HENLEY F J (HENL-Individual) GA 2003566450 AB NOVELTY - An ultra clean method for manufacturing an integrated circuit device uses a combination of a high energy light source and electrostatic bias for removing impurities, e.g. particles from integrated circuits. USE - The ultra clean method is used for manufacturing an integrated circuit device. It can be applied to other devices, e.g. three-dimensional packaging of integrated semiconductor devices, photonic devices, opto-electronic devices, piezoelectronic devices, micromechanical systems, sensors, actuators, solar cells, flat panel displays, and biological and biomedical devices. ADVANTAGE - The method provides a clean and dry cleaning process that is free from harmful chemicals and gases, removes particles that cannot reattach themselves to the substrate, can be implemented using conventional hardware and software with some customization, provides a non-contact dry technique for removing the particle, prevents particles from reattaching on surfaces of the object being processed, and is also clustertool compatible. DETAILED DESCRIPTION - An ultra clean method for manufacturing an integrated circuit device, involves retrieving an in process substrate comprising particle(s) from an input chamber coupled to a robot room, moving the substrate from the input chamber into a cleaning chamber coupled to the robot arm, placing the substrate on a susceptor in the cleaning chamber, applying a high energy photon on a substrate surface to release the particles while the substrate is maintained in an environment and applying an electrostatic force from an electrode directed to the substrate to attract and remove the released particles, and transferring the substrate from the cleaning chamber to another chamber. The other chamber can be an etching chamber, deposition chamber, furnace, sputtering chamber, an implantation chamber, or a bonding chamber. The electrostatic force prevents a possibility of the particles from redistributing back on the substrate surface. DESCRIPTION OF DRAWING(S) - The figure shows a cross-sectional view diagrams of the inventive method. Vacuum (101) Particles (105) Substrate (111) High energy photon source (115) Released particles (117) TF TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The high energy photon source is laser sources comprising an argon ion neodymium:yttrium lithium fluoride, neodymium :yttrium aluminum garnet, xenon chloride, krypton fluoride, argon fluoride, or any of its harmonics or variance. TECHNOLOGY FOCUS - ELECTRONICS - Preferred Component: The electrode comprises negative or positive voltage potential relative to the particles. The environment is vacuum or atmospheric environment. The particles are attached by Van der walls attraction to the surface. The substrate is pre gate oxide wafer, a partially completed wafer, a wafer comprising a contact opening, a donor wafer or handle wafer to be bonded to each other, or a flat panel substrate. The other chamber is coupled to the robot arm.Preferred Property: The particles are less than 0.1 micronsm or less than 0.05 micronsm in dimension. DC L03 (Electro-(in)organic, chemical features of electrical devices); U11 (Semiconductor Materials and Processes) MC L04-C09; L04-D09; U11-C06A1B; U11-F02A1 IP C25F-005/00 PD US6526997-B1 04 Mar 2003 C25F-005/00 200353 Pages: 17 AD US6526997-B1 US642284 18 Aug 2000 PI US642284 18 Aug 2000 FS 1341.3; 1342; 13421; 13425.4; 13426; 13430; 13437; 134902; 151.51; 438906 CP US6526997-B1 EP790642-A2 APPLIED MATERIALS INC (MATE-Non-standard) HUO D D US4744833-A IBM CORP (IBMC) COOPER D W, WOLFE H L, YEH J T C US5024968-A ENGELSBERG A C (ENGE-Individual); CAULDRON LP (CAUL-Non-standard) ENGELSBERG A C F US5099557-A ENGELSBERG A C (ENGE-Individual); CAULDRON LP (CAUL-Non-standard) ENGELSBERG A C F US5125124-A US5228206-A US5584938-A US5858108-A US5891256-A YIELDUP INT CORP (YIEL-Non-standard) MOHINDRA R, BHUSHAN A, BHUSHAN R, PURI S, ANDERSON J H, NOWELL J CR US6526997-B1 A. Grill.Cold Plasma in Materials Fabrication. 1994. IEEE PRESS. ISBN 0-7803-1055-1. pp. 110-111.* Audrey C. Engelsberg, "Laser-Assisted Cleaning Proves Promising", Precision Cleaning Magazine, May 1995. James F. Weygand et al., "Cleaning Silicon Wafers with an Argon/Nitrogen Cryogenic Aerosol Process", Micro, Apr. 1997. UT DIIDW:2003566450 ER PT P PN EP1300727-A2; JP2003114522-A; US2003148206-A1; KR2003051200-A; US6830867-B2; JP3827290-B2; TW255965-B1; KR879252-B1 TI Positive photosensitive composition used in manufacture of semiconductors, comprise acid generator that generate acid when irradiated, and resin decomposable by action of acid to increase dissolution speed in alkali developer. AU KODAMA K AE FUJI PHOTO FILM CO LTD (FUJF-C) FUJI PHOTO FILM CO LTD (FUJF-C) FUJI FILM CORP (FUJF-C) GA 2003534071 AB NOVELTY - A positive photosensitive composition comprises an acid generator (A) which generates acid upon irradiation with actinic ray or radiation, and resin (B) having monocyclic or polycyclic alicyclic hydrocarbon structure, decomposable by the action of an acid to increase dissolution speed in an alkali developer. USE - Used in manufacture of semiconductors such as integrated circuits, circuit boards for liquid crystal display and thermal head, and in other photofabrication processes. ADVANTAGE - The positive photosensitive composition can form fine patterns without pattern collapsing. The repeating units incorporated in the resin enables solubility of the resin in the coating solvent, film form ability, alkali developability, reduction in film thickness, adhesion in substrate in unexposed area and dry etching resistance. DETAILED DESCRIPTION - A positive photosensitive composition comprises an acid generator (A) of formula (I) which generates acid upon irradiation with actinic ray or radiation, and resin (B) having monocyclic or polycyclic alicyclic hydrocarbon structure, decomposable by the action of an acid to increase dissolution speed in an alkali developer. R1-R5 = hydrogen atom, nitro, halogen or (un)substituted alkyl, alkoxy, alkyloxycarbonyl, aryl or acylamino group, at least 2 of R1-R5 combine with each other to form a cyclic structure; R6,R7 = hydrogen, cyano or (un)substituted alkyl or aryl group; Y1,Y2 = (un)substituted alkyl, ether linkage group or sulfide linkage group, or an (un)substituted alkenyl group; X- = non-nucleophilic anion; provided that when both Y1 and Y2 are alkyl groups, at least either Y1 or Y2 has a hydroxy group, an ether linkage group or a sulfide linkage group, or each of the alkyl groups contains at least 2 carbon atoms, at least one of R1-R5 and at least either Y1 or Y2 may combine with each other to complete a ring, at least one of R1-R5 and at least either R6 or R7 may combine with each to complete a ring, at least two structures represented by formula (I) may be linked together in any of the positions of R1-R7, Y1 and Y2 via a linkage group. TF TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The photosensitive composition further comprises a basic compound (C), fluorine-contained and/or silicon-contained surfactant (D), a mixture (E) of hydroxyl group-containing solvent and a hydroxyl group-free solvent, and dissolution inhibiting low-molecular compound (F) having a molecular weight of at most 3000 and a group capable of being decomposed by the action of an acid to increase solubility in an alkali developer. The basic compound is a compound having at least one structure selected from imidazole structure, diazabicyclo structure, onium hydroxide structure, onium carboxylate structure, trialkyl amine structure and an aniline structure. TECHNOLOGY FOCUS - POLYMERS - Preferred Resin: The resin (B) further contains a repeating unit having a lactone structure. The resin has at least one repeating unit selected from repeating units containing alicyclic hydrocarbon moieties of formula (pI-pVI) as partial structures, and repeating units of formula (II-AB). The repeating unit having lactone structure is a repeating unit of formula (IV). The resin (B) further contains a repeating unit including a group represented by the formula (V-1)-(V-5), repeating unit of formula (VI), repeating unit having a group of formula (VII) and a repeating unit of formula (VIII).R11 = methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl or sec-butyl group;Z = atoms forming an alicyclic hydrocarbon group together with the carbon atom;R12-R16 = 1-4C linear or branched alkyl or alicyclic hydrocarbon;R17-R21 = hydrogen, 1-4C optionally branched alkyl group or an alicyclic hydrocarbon group; andR22-R25 = optionally branched 1-4C alkyl or an alicyclic hydrocarbon group, R23 and R24 combine with each other to form a ring.Provided that at least one of R12, R13 and R14, or either R15 or R16 is an aliphatic hydrocarbon group, at least one of R17-R21 is an aliphatic hydrocarbon group and either R19 or R21 is a 1-4C linear or branched alkyl group or an alicyclic hydrocarbon group, and at least one of R22-R25 is an alicyclic hydrocarbon group.R11',R12' = hydrogen, cyano, halogen or (un)substituted alkyl; andZ' = atoms forming (un)substituted alicyclic structure together with the bonded two carbon atoms (C-C).R1a = H or methyl;W1 = single bond, alkylene, ether, thioether, carbonyl, ester, or a group formed by combining at least two of these groups;Ra1-Re1 = H or 1-4C alkyl group; andm,n = integer from 0-3.provided that m+n is from 2-6.R1b-R5b = H or (un)substituted alkyl, cycloalkyl or alkenyl group, or two of R1b-R5b may combine with each other to form a ring;A6 = single bond, alkylene, cycloalkylene, ether, thioether, carbonyl, ester or group formed by combining any two or more of these groups;Z6 = -O-(CO)-, -(CO)-O-R6a = H, 1-4C alkyl, cyano group, or halogen; andR2c-R4c = H or hydroxy group.Provided that at least one of R2c-R4c represents a hydroxy group.Z2 = -O- or -N(R41)-;R41 = H, hydroxy group, alkyl group, haloalkyl group or -OSO2-R42; andR42 = alkyl group, haloalkyl group, cycloalkyl group or camphor residue. Preferred Definitions: Y1,Y2 = 4C or more alkyl, preferably butyl or hydroxyethyl group; X- = perfluoroalkanesulfonic acid anion or benzenesulfonic acid anion substituted with fluorine atom or fluorine containing substituent. EXAMPLE - An acid generator of formula (I-1) was obtained by reacting phenacyl bromide (in g) (16), di-n-butylsulfide (12.4), silver tetrafluoroborate (16.4) and potassium nonafluorobutanesulfonate (10.1). A resin of formula (1) was prepared by reacting 2-ethyl-2-adamantylmethacrylate and butyrolactone methacrylate in mixture of methyl ethyl ketone (MEK) and tetrahydrofuran, and 2 mol% of V-65(TM). The resin 1 (10), acid generator (0.6), 1,5-diazabicyclo (4.3.0) non-5-ene (0.02), Megafac F176(TM) (0.03) and propylene glycol methyl ether acetate, were mixed and a photosensitive composition were prepared. A resist film was formed on a substrate using the resin composition, and exposed to argon fluoride excimer laser and heated. The resist film was developed and rinsed to obtain line patterns having resolution of 0.105 mum. The line profiles were rectangular in shape. DC A89 (Photographic, laboratory equipment, optical); A14 (Other substituted mono-olefins, PVC, PTFE); E14 (Aromatics); E13 (Heterocyclics); G06 (Photosensitive compositions and bases, photographic processes); P84 (Other photographic); P83 (Photographic processes, compositions) MC A08-M08; A12-E07; A12-L02B2; E06-B01; E06-B02; E08-H; E10-A01; E11-P; G06-D04; G06-D06 IP G03F-007/004; G03F-007/039; C08F-020/18; C08F-020/28; C08F-032/00; H01L-021/027; H01L-051/40; G03C-001/492; G03G-005/00 PD EP1300727-A2 09 Apr 2003 G03F-007/004 200351 Pages: 85 English JP2003114522-A 18 Apr 2003 G03F-007/004 200351 Pages: 75 Japanese US2003148206-A1 07 Aug 2003 H01L-051/40 200358 English KR2003051200-A 25 Jun 2003 G03F-007/039 200373 US6830867-B2 14 Dec 2004 G03F-007/004 200501 English JP3827290-B2 27 Sep 2006 G03F-007/004 200663 Pages: 98 Japanese TW255965-B1 01 Jun 2006 G03F-007/004 200726 Chinese KR879252-B1 16 Jan 2009 G03F-007/039 200921 AD EP1300727-A2 EP022234 02 Oct 2002 JP2003114522-A JP307537 03 Oct 2001 US2003148206-A1 US261655 02 Oct 2002 KR2003051200-A KR059948 01 Oct 2002 US6830867-B2 US261655 02 Oct 2002 JP3827290-B2 JP307537 03 Oct 2001 TW255965-B1 TW122794 03 Oct 2002 KR879252-B1 KR059948 01 Oct 2002 FD JP3827290-B2 Previous Publ. Patent JP2003114522 KR879252-B1 Previous Publ. Patent KR2003051200 PI JP307537 03 Oct 2001 DS EP1300727-A2: (Regional): AL; AT; BE; BG; CH; CY; CZ; DE; DK; EE; ES; FI; FR; GB; GR; IE; IT; LI; LT; LU; LV; MC; MK; NL; PT; RO; SE; SI; SK; TR FS 430/270.1; 430/905; 430/921 CP EP1300727-A2 DE10054550-A1 NEC CORP (NIDE) MAEDA K, IWASA S, NAKANO K, HASEGAWA E EP1091248-A1 FUJI PHOTO FILM CO LTD (FUJF) SATO K, KODAMA K, AOAI T EP1096319-A1 FUJI PHOTO FILM CO LTD (FUJF) SATO K, MIZUTANI K, YASUNAMI S EP1296190-A1 FUJI PHOTO FILM CO LTD (FUJF) FUJIMORI T, KAWABE Y EP877293-A2 FUJI PHOTO FILM CO LTD (FUJF) AOAI T, SATO K, YAGIHARA M EP1267210-A2 JP2000292917-A US20010041303-A1 US20020098440-A1 US20030017415-A1 US6291130-B1 FUJI PHOTO FILM CO LTD (FUJF) KODAMA K, SATO K, AOSO T US6830867-B2 DE10054550-A1 NEC CORP (NIDE) MAEDA K, IWASA S, NAKANO K, HASEGAWA E EP1091248-A1 FUJI PHOTO FILM CO LTD (FUJF) SATO K, KODAMA K, AOAI T EP1096319-A1 FUJI PHOTO FILM CO LTD (FUJF) SATO K, MIZUTANI K, YASUNAMI S EP1296190-A1 FUJI PHOTO FILM CO LTD (FUJF) FUJIMORI T, KAWABE Y EP877293-A2 FUJI PHOTO FILM CO LTD (FUJF) AOAI T, SATO K, YAGIHARA M EP1267210-A2 JP2000292917-A US20010041303-A1 US20020098440-A1 US20030017415-A1 US6291130-B1 FUJI PHOTO FILM CO LTD (FUJF) KODAMA K, SATO K, AOSO T JP3827290-B2 DE10054550-A1 NEC CORP (NIDE) MAEDA K, IWASA S, NAKANO K, HASEGAWA E JP08027094-A KR879252-B1 JP2001142212-A KR2000023368-A SHINETSU CHEM IND CO LTD (SHIE) HASEGAWA K, NISHI T, KANOU T, HATAKEYAMA, WATANABE O KR2001050290-A DAICEL CHEM IND LTD (DAIL) NAKANO T CR EP1300727-A2 PATENT ABSTRACTS OF JAPAN vol. 2000, no. 13, 5 February 2001 (2001-02-05) -& JP 2000 292917 A (TOKYO OHKA KOGYO CO LTD), 20 October 2000 (2000-10-20) US6830867-B2 European Search Report dated Aug. 27, 2003. DN 732634-0-1-0-K U MN 009623201 K U; 009623202 K U; 009623204 K U; 009623203 K U; 009623205 K U; 009623206 K U; 009623207 K U CI RAAREY-K U UT DIIDW:2003534071 ER PT P PN JP2003147474-A TI Corrosion-resistant material for excimer-laser oscillator, consists of alloy having chromium, molybdenum, tantalum, titanium and/or rare-earth metal, exposed to halogen group corrosive gas or plasma of corrosive gas. AU TAKAI Y MAKINO Y HAMAYA N AE SHINETSU CHEM IND CO LTD (SHIE-C) GA 2003517686 AB NOVELTY - The corrosion-resistant material consists of alloy having chromium, molybdenum, tantalum, titanium and/or rare earth metal. The alloy is exposed to halogen group corrosive gas or plasma of the corrosive gas. USE - For etching apparatus material, for semiconductor liquid crystal manufacture and for electrode material for fluorine group excimer-laser oscillators (claimed) such as argon-fluoride and krypton fluoride group oscillators. ADVANTAGE - The material has excellent corrosion resistance with respect to halogen group corrosive gas or plasma of the corrosive gas. The variation with respect to time using the laser apparatus is minimized. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for fluorine group excimer-laser oscillator. DESCRIPTION OF DRAWING(S) - The figure shows argon fluorine excimer-laser transmission apparatus. DC L03 (Electro-(in)organic, chemical features of electrical devices); V08 (Lasers and Masers) MC L03-F02B; L04-D; V08-A04B; V08-A09 IP C22C-028/00; H01S-003/038; H01S-003/225 PD JP2003147474-A 21 May 2003 C22C-028/00 200349 Pages: 5 Japanese AD JP2003147474-A JP341714 07 Nov 2001 PI JP341714 07 Nov 2001 UT DIIDW:2003517686 ER PT P PN EP1276012-A2; US2003108819-A1; KR2003032825-A; JP2003316027-A; US6878508-B2; KR636067-B1; JP4045420-B2; TW282036-B1 TI Resist patterning for semiconductor manufacture, involves applying resist composition of base resin onto substrate, exposing pre-baked resist film to radiation pattern, and post-baking resist pattern for causing thermal flow. AU WATANABE S KOBAYASHI T AE SHINETSU CHEM CO LTD (SHIE-C) SHINETSU CHEM CO LTD (SHIE-C) SHINETSU CHEM CO LTD (SHIE-C) SHINETSU CHEM IND CO LTD (SHIE-C) SHINETSU CHEM IND CO LTD (SHIE-C) GA 2003494963 AB NOVELTY - A resist composition is applied onto a substrate to form resist film which is pre-baked and exposed to pattern of radiation. The exposed resist film is then subjected to baking, and developed to form resist pattern. The pattern is post-baked for causing thermal flow. The resist composition comprises a base resin in the form of a polymer or copolymer comprising specific structural units (I), and a photo acid generator. USE - In manufacture of semiconductors and LSIs. ADVANTAGE - The resist patterning process effectively improves the degree of integration of semiconductor LSI and the fineness of microfabrication. The process uses a positive resist composition having high transmittance to UV and deep UV, high sensitivity, high resolution, and high affinity to basic developers. The composition is also capable of forming satisfactory micropatterns. DETAILED DESCRIPTION - A resist composition is applied onto a substrate to form a resist film. The resist film is pre-baked and exposed to a pattern of radiation. The exposed resist film is then subjected to post-exposure baking. The post-exposure baked resist film is developed to form a resist pattern. The resist pattern is then post-baked for causing thermal flow. The resist composition comprises a base resin in the form of a polymer or copolymer, and a photo acid generator capable of generating acid upon exposure to radiation. The polymer or copolymer comprises structural units of formula (I), in a backbone and partially having labile groups on side chains. X1 and X2 = -O-, -S-, -NR-, -PR-, or -C(R)2-; R = H or 1-20C alkyl; and m = 0 or 1-3. TF TECHNOLOGY FOCUS - POLYMERS - Preferred Resin: The base resin is a hydrogenated product of a ring-opening metathesis polymer comprising structural units (A) of formula (5), and structural units (B) of formula (3), and/or structural units (C) of formula (4).R1, R2, R3 and/or R4 = group having an acid labile group of formula (2), with the remaining being H, straight, branched or cyclic 1-20C alkyl, halogen, straight, branched or cyclic 1-20C haloalkyl, straight, branched or cyclic 1-20C alkoxy, straight, branched or cyclic 2-20C alkoxyalkyl, straight, branched or cyclic 2-20C alkylcarbonyloxy, 7-20C arylcarbonyloxy, straight, branched or cyclic 1-20C alkylsulfonyloxy, 6-20C arylsulfonyloxy, straight, branched or cyclic 2-20C alkoxycarbonyl, or straight, branched or cyclic 3-20C alkoxycarbonylalkyl;R8-R11 = H, or straight, branched or cyclic 1-10C alkyl;R13-R16 = H, or straight, branched or cyclic 1-10C alkyl;Y1 or Y2 = -(C=O)-, with the other being -C(R18)2;R18 = H, or straight or branched 1-10C alkyl;j and n = 0, or 1-3.broken line = free valence bond;R5 = H, straight, branched or cyclic 1-10C alkyl, straight, branched or cyclic 2-10C alkoxyalkyl, or straight, branched or cyclic 1-10C acyl;W1 = single bond or (k+2)-valent 1-10C hydrocarbon group;RAL = acid labile group; andk = 0 or 1.Preferred Composition: The resist composition comprises a base resin in the form of a mixture of the hydrogenated product of a ring-opening metathesis polymer and a poly(meth)acrylic acid derivative, and a photo acid generator.Preferred Polymer: The hydrogenated product of ring-opening metathesis polymer is a polymer comprising recurring units of formula (I), and having a weight average molecular weight of 500-200000.R101 = H, methyl, or CH2CO2R103;R102 = H, methyl, or CO2R103;R103 = straight, branched or cyclic 1-15C alkyl;R104 = acid labile group;R105 = halogen, hydroxyl, straight, branched or cyclic alkoxy, acyloxy or alkylsulfonyloxy of 1-15C, or straight, branched or cyclic alkoxycarbonyloxy or alkoxyalkoxy of 2-15C, in which some or all of the hydrogen atoms on consequent carbon atoms may be substituted with halogen atoms;R106, R107, R108 and/or R109 = 1-15C monovalent hydrocarbon group having carboxyl or hydroxyl group, with the remaining being H or straight, branched or cyclic 1-15C alkyl, or a pair of R106 and R107, R107 and R108, or R108 and R109 may form a ring with a carbon atom or atoms to which they are bonded, and in that event, one of R106 and R107, R107 and R108, or R108 and R109 is a 1-15C divalent hydrocarbon group having a carboxyl or hydroxyl group while the other is a single bond or a straight, branched or cyclic 1-15C alkylene;R110, R111, R112 and/or R113 = 2-15C monovalent hydrocarbon containing partial structure(s) chosen from ether, aldehyde, ketone, ester, carbonate, acid anhydride, amide and imide, with the remaining being H, or straight, branched or cyclic 1-15C alkyl, or a pair of R110 and R111, R111 and R112, or R112 and R113 may form a ring with a carbon atom or atoms to which they are bonded, and in that event, one of R110 and R111, R111 and R112, or R112 and R113 is a 1-15C divalent hydrocarbon group containing partial structure(s), while the other is a single bond or a straight, branched or cyclic 1-15C alkylene;X11-X13 = methylene, or oxygen atom;W = single bond, or straight, branched or cyclic (t+2)-valent 1-5C hydrocarbon, in which at least one methylene group may be substituted with an oxygen atom to form a chain-like or cyclic ether, or 2 hydrogen atoms on a common carbon may be substituted with an oxygen atom to form a ketone;k1-k3 = 0 or 1;t = 0, 1 or 2;a = greater than 0, and less than 1;b and c = 0, and less than 1;a+b+c = 1.X11-X13 are not methylene simultaneously. EXAMPLE - A resist composition was prepared using a resin of formula (a) having a weight average molecular weight of 14000 and a molecular weight distribution of 1.5, triphenylsulfoniumnonafluoro butylsulfonate (photo acid generator), tris(2-methoxymethoxyethyl) amine (basic compound), and a solvent mixture of 90 wt.% propylene glycol methyl ether acetate and 10 wt.% gamma-butyrolactone. A resist solution was obtained by filtering the composition. The resist solution was spin-coated onto a silicon wafer having an organic anti-reflection film. The coated wafer was pre-baked to form an optimum pattern. The resist film was exposed to argon fluoride excimer laser, baked to provide an optimum pattern, and developed to form a positive pattern. The sensitivity was 56 mJ/cm2, a diameter of contact hole after baking at 150 degrees C was 162 nm, the etching rate of the resist film was 0.98, and the surface roughness of the etched resist film was 1.1 nm. x = 35; y = 19; and z = 46. DC A89 (Photographic, laboratory equipment, optical); E19 (Other organic compounds general - unknown structure, mixtures); G06 (Photosensitive compositions and bases, photographic processes); L03 (Electro-(in)organic, chemical features of electrical devices); P84 (Other photographic); U11 (Semiconductor Materials and Processes); X12 (Power Distribution/Components/Converters); E13 (Heterocyclics); P83 (Photographic processes, compositions); V04 (Printed Circuits and Connectors) MC A04-B; A08-M08; A12-E07C; A12-L02B2; E07-H; E10-A01; E10-A09B1; E10-A10B; E10-A10C; E10-A10D; E10-A20B; G06-D06; G06-F03C; G06-F03D; L04-C06B1; U11-C04A1C; X12-E02B IP G03F-007/039; G03F-007/40; G03C-005/56; C08G-061/00; G03F-007/38; H01L-021/027; G03C-005/00 PD EP1276012-A2 15 Jan 2003 G03F-007/039 200347 Pages: 27 English US2003108819-A1 12 Jun 2003 G03C-005/56 200347 English KR2003032825-A 26 Apr 2003 G03F-007/039 200354 JP2003316027-A 06 Nov 2003 G03F-007/40 200375 Pages: 59 Japanese US6878508-B2 12 Apr 2005 G03C-005/00 200525 English KR636067-B1 20 Oct 2006 200758 JP4045420-B2 13 Feb 2008 G03F-007/40 200813 Pages: 80 Japanese TW282036-B1 01 Jun 2007 200832 Chinese AD EP1276012-A2 EP254910 12 Jul 2002 US2003108819-A1 US193224 12 Jul 2002 KR2003032825-A KR040550 12 Jul 2002 JP2003316027-A JP198362 08 Jul 2002 US6878508-B2 US193224 12 Jul 2002 KR636067-B1 KR040550 12 Jul 2002 JP4045420-B2 JP198362 08 Jul 2002 TW282036-B1 TW115570 12 Jul 2002 FD KR636067-B1 Previous Publ. Patent KR2003032825 JP4045420-B2 Previous Publ. Patent JP2003316027 PI JP213015 13 Jul 2001 JP295653 27 Sep 2001 JP045588 22 Feb 2002 DS EP1276012-A2: (Regional): AL; AT; BE; BG; CH; CY; CZ; DE; DK; EE; ES; FI; FR; GB; GR; IE; IT; LI; LT; LU; LV; MC; MK; NL; PT; RO; SE; SI; SK; TR FS 430/270.1; 430/296; 430/325; 430/330; 525/326.8 CP EP1276012-A2 EP1099983-A1 SHINETSU CHEM CO LTD (SHIE) TAKEMURA K, KOIZUMI K, KANEKO T, SAKURADA T EP1004568-A2 SHINETSU CHEM CO LTD (SHIE) KINSHO T, NISHI T, KURIHARA H, HASEGAWA K, WATANABE T, WATANABE O, NAKASHIMA M, TAKEDA T, HATAKEYAMA J JP2000109545-A US6207779-B1 US6878508-B2 EP1099983-A1 SHINETSU CHEM CO LTD (SHIE) TAKEMURA K, KOIZUMI K, KANEKO T, SAKURADA T EP1004568-A2 SHINETSU CHEM CO LTD (SHIE) KINSHO T, NISHI T, KURIHARA H, HASEGAWA K, WATANABE T, WATANABE O, NAKASHIMA M, TAKEDA T, HATAKEYAMA J EP1149825-A2 JP04039665-A JP05257281-A JP05257285-A JP06342212-A JP07333850-A JP09230595-A JP09244247-A JP10254139-A JP11130843-A MITSUI PETROCHEM IND CO LTD (MITC) YAMAMOTO Y, SUNAGA T JP11130844-A MITSUI PETROCHEM IND CO LTD (MITC) YAMAMOTO Y, SUNAGA T JP11130845-A MITSUI PETROCHEM IND CO LTD (MITC) SUNAGA T, YAMAMOTO Y JP11171982-A MITSUI PETROCHEM IND CO LTD (MITC) YAMAMOTO Y, TAKAO T, FUKUDA R, IKEDA K, SUNAGA T, KAWAHARA N, OOKITA M, ICHIKI Y JP2000109545-A JP2000159758-A SHINETSU CHEM IND CO LTD (SHIE) HASEGAWA K, NISHI T, KANOU T, HATAKEYAMA, WATANABE O JP2000357544-A JP2001027803-A US20020114084-A1 US6207779-B1 US6372854-B1 US6670498-B2 WO1997033198-A1 JP4045420-B2 JP10254140-A JP2001125270-A SHINETSU CHEM CO LTD (SHIE) NISHI T, WATANABE T, KINSHO T, HASEGAWA K, KOBAYASHI T, HATAKEYAMA J JP2001142199-A SHINETSU CHEM CO LTD (SHIE) TAKEMURA K, KOIZUMI K, KANEKO T, SAKURADA T JP2001188350-A CR EP1276012-A2 DATABASE WPI Section Ch, Week 199930 Derwent Publications Ltd., London, GB; Class A17, AN 1999-352899 XP002217910 & JP 11 130844 A (MITSUI PETROCHEM IND CO LTD), 18 May 1999 (1999-05-18) DATABASE WPI Section Ch, Week 199930 Derwent Publications Ltd., London, GB; Class A17, AN 1999-352899 XP002217910 & JP 11 130844 A (MITSUI PETROCHEM IND CO LTD), 18 May 1999 (1999-05-18) DN 184613-0-0-0-K M; 304693-0-0-0-K M; 7200-0-0-0-; 49004-0-0-0-; 368-0-0-0-; 3112-0-0-0-; 1911-0-0-0-; 10151-0-0-0-; 132178-0-0-0-; 3154-0-0-0-; 789330-0-0-0- MN 008677705 K M; 008677704 K M; 008677703 K M; 008677702 K M; 008677701 K M; 008677706 K M; 008677708 K M; 008677707 K M RI 00013; 00045; 00358; 00416; 00445; 00508; 00517; 11668; 41359; 00414; 03531 CI RA00I9-K M; RA260U-K M; R00479-; R00800-; R00708-; R00901-; R00446-; R00460-; R12182-; R01264- UT DIIDW:2003494963 ER PT P PN EP1300378-A; US2003056892-A1; CA2404804-A1; EP1300378-A1; FR2830008-A1; JP2003212676-A; US6960278-B2; EP1300378-B1; DE60222847-E; ES2295304-T3; DE60222847-T2; JP4335509-B2; CA2404804-C TI Improving adhesion properties of non-oxide ceramic substrate to power semiconductor component involves irradiating substrate surface with excimer laser and applying coupling agent to irradiated surface. AU PETITBON A EVIEUX J BAZIARD Y AE ALSTOM (ALSM-C) ALSTOM (ALSM-C) ALSTOM SA (ALSM-C) ALSTOM (ALSM-C) GA 2003492370 AB NOVELTY - Improving adhesion properties of non-oxide ceramic substrate (1) before gluing involves irradiating ceramic substrate surface with excimer laser to modify the chemical bonds and applying a coupling agent to the irradiated surface to form chemical bond between coupling agent and oxidized surface resulting from irradiation of the ceramic substrate. USE - Improving adhesion properties of non-oxide ceramic substrate used to support power semiconductor components (10) and to be glued to a cooling manifold used in inverters used in the railroad art. ADVANTAGE - The substrate has improved adhesion properties, durability and reliable glued joint having strong chemical bonds. The penetration of moisture at the interfaces is prevented and service life of assembly is increased, especially in hot and wet environments. The method is inexpensive, non-polluting and can be performed in a white room environment without special enclosures. DETAILED DESCRIPTION - Improving adhesion properties of non-oxide ceramic substrate (1) before gluing involves irradiating ceramic substrate surface with excimer laser to modify the chemical bonds and applying a coupling agent to the irradiated surface to form chemical bond between coupling agent and oxidized surface resulting from irradiation of the ceramic substrate. The laser is a krypton fluoride excimer laser emitting at 248 nm or argon fluoride excimer laser emitting at 193 nm. The substrate is made of aluminum nitride, silicon carbide or silicon nitride. The coupling agent is an aqueous silane solution. INDEPENDENT CLAIMS are included for the following: (1) method of assembly by gluing non-oxide ceramic substrate to cooling liquid manifold (5) using a modified epoxy resin; and (2) power module. DESCRIPTION OF DRAWING(S) - The figure shows section of substrate glued to water manifold. Substrate (1) Cooling liquid manifold (5) Power semiconductor component (10) DC A85 (Electrical applications); L03 (Electro-(in)organic, chemical features of electrical devices); P42 (Spraying, atomising); P73 (Layered products); U11 (Semiconductor Materials and Processes) MC A10-E01; A12-E08B; A12-E10; A12-H02C; L04-C17D; L04-C22; U11-A05B IP B05D-003/00; B32B-031/00; B32B-018/00; C04B-035/515; C04B-041/80; C09J-005/02; C09J-183/06; H01L-023/373; C04B-037/00; C04B-041/00; B05D-003/06; B05D-005/10; H01L-023/15; H05K-007/20; B29C-065/48; B29K-077:00; B29L-024:00; C04B-041/84; H01L-023/40; H01L-023/473; C04B-041/82; H01L-023/34; C04B-041/52; C04B-041/89; H01L-021/48 PD EP1300378-A US2003056892-A1 27 Mar 2003 B05D-003/00 200346 Pages: 6 English CA2404804-A1 21 Mar 2003 C04B-041/80 200346 French EP1300378-A1 09 Apr 2003 C04B-037/00 200346 French FR2830008-A1 28 Mar 2003 C04B-037/00 200346 JP2003212676-A 30 Jul 2003 C04B-041/80 200351 Pages: 20 US6960278-B2 01 Nov 2005 B05D-003/00 200571 EP1300378-B1 10 Oct 2007 C04B-037/00 200766 French DE60222847-E 22 Nov 2007 C04B-037/00 200777 ES2295304-T3 16 Apr 2008 C04B-037/00 200830 JP4335509-B2 30 Sep 2009 C04B-041/80 200964 Pages: 7 Japanese CA2404804-C 10 Jul 2012 C04B-041/80 201249 French AD US2003056892-A1 US234255 05 Sep 2002 CA2404804-A1 CA2404804 13 Sep 2002 EP1300378-A1 EP292108 28 Aug 2002 FR2830008-A1 FR012185 21 Sep 2001 JP2003212676-A JP271050 18 Sep 2002 EP1300378-B1 EP292108 28 Aug 2002 DE60222847-E DE622847 28 Aug 2002 DE60222847-T2 DE622847 28 Aug 2002 JP4335509-B2 JP271050 18 Sep 2002 CA2404804-C CA2404804 13 Sep 2002 FD DE60222847-E Based on Patent EP1300378 DE60222847-E EP application Application EP292108 ES2295304-T3 Based on Patent EP1300378 ES2295304-T3 EP application Application EP292108 DE60222847-T2 Based on Patent EP1300378 DE60222847-T2 EP application Application EP292108 JP4335509-B2 Previous Publ. Patent JP2003212676 PI FR012185 21 Sep 2001 DS EP1300378-A1: (Regional): AL; AT; BE; BG; CH; CY; CZ; DE; DK; EE; ES; FI; FR; GB; GR; IE; IT; LI; LT; LU; LV; MC; MK; NL; PT; RO; SE; SI; SK; TR EP1300378-B1: (Regional): DE; ES; GB; IT; SE FS x; 156272.2; 156272.8; 156273.3; 427532; 427533; 427554; 427596 CP EP1300378-A DE19860135-A US5473137-A WO9803600-A CIBA SPECIALTY CHEM HOLDING INC (CIBA) SAUER J EP1300378-A1 DE19860135-A1 US5473137-A WO9803600-A1 CIBA SPECIALTY CHEM HOLDING INC (CIBA) SAUER J FR2830008-A1 DE19860135-A1 DE19860135-C2 US5473137-A WO9803600-A1 CIBA SPECIALTY CHEM HOLDING INC (CIBA) SAUER J US6960278-B2 DE19860135-A1 JP6090083-A US5473137-A US6268522-B1 HOECHST RES & TECHNOLOGY DEUT GMBH & CO (FARH) HAGEMEYER A, DINGERDISSEN U, KUEHLEIN K, HEITZ J, BAEUERLE D WO9803600-A1 CIBA SPECIALTY CHEM HOLDING INC (CIBA) SAUER J EP1300378-B1 DE19860135-A1 US5473137-A WO9803600-A CIBA SPECIALTY CHEM HOLDING INC (CIBA) SAUER J UT DIIDW:2003492370 ER PT P PN US2003027349-A1; EP1310458-A2; JP2003021619-A; US7035306-B2; EP1310458-B1; DE60235864-E TI Assaying of fluorite sample for optical element, involves dissolving fluorite sample containing calcium and fluorite, removing calcium and fluorite, and assaying by inductively coupled plasma-mass spectrometry apparatus. AU OOKUBO K OKUBO K AE OOKUBO K (OOKU-Individual) CANON KK (CANO-C) CANON KK (CANO-C) CANON KK (CANO-C) GA 2003479545 AB NOVELTY - Providing a fluoride assaying method having sensitivity several times higher than conventional methods. USE - For assaying fluorite sample to produce fluorite crystal for optical system of exposure apparatus (all claimed) and photolithographic apparatus. The exposure apparatus is used for producing devices such as semiconductor chips e.g. integrated circuits and large scale integrations, liquid crystal panels, CCDS, thin film magnetic heads and micromachines. ADVANTAGE - The fluorite assaying method has higher sensitivity, and detects the impurities such as metal elements or rare earth elements which are influential to durability or decrease of transmissivity, at a good precision. A fluorite having good optical characteristics and durability and high transmissivity with respect to vacuum ultraviolet light is effectively produced. The optical system has light absorption and decreased transmissivity to ultraviolet light, and is stable in illuminance. The semiconductor exposure apparatus has decreased illuminance reduction and thus assures good productivity. High density microdevices are manufactured stably and with decreased cost using the fluorite crystal, as deterioration of imaging performance due to aberration by thermal expansion is small. DETAILED DESCRIPTION - A fluorite sample containing calcium and fluorine is dissolved using a solvent. Calcium and fluorine are removed from the solution and the solution is assayed through inductively coupled plasma-mass spectrometry apparatus. INDEPENDENT CLAIMS are included for the following: (1) exposure apparatus which has argon-fluoride excimer laser or fluorine excimer laser as light source. The lens elements used in illumination optical system and projection optical system of the exposure apparatus, comprise calcium fluorite as major component and element (A) (3 ppb or less). The element (A) is yttrium, lanthanum, cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium and lutetium; (2) production of fluoride crystal. A fluoride raw material having a scavenger is fused to provide a refined product. The refined product is fused and recrystallized to produce an ingot. The ingot is annealed at a temperature not greater than the melting point, to improve crystallinity and provide an annealed product. A quantitative assay of element (A) is performed with respect to fluorite raw material, refined product, ingot and annealed product. The fusing and annealing products are controlled based on the result of the assay and a fluorite crystal is produced; (3) fluorite; (4) optical system for use with ultraviolet light as a light source, which comprises the fluorite; (5) manufacture of device which involves using exposure apparatus; and (6) evaluation of optical characteristics of fluorite which involves performing quantitative assay of at least one element (A) in the fluorite. DESCRIPTION OF DRAWING(S) - The figure shows the flow chart of fluorite assaying method. TF TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: A fluorite sample is transformed into calcium nitrate solution by using nitric acid.The calcium nitrate solution is kept hot to remove hydrogen fluoride and excessive nitric acid.The residual solute dissolved in an aqueous solution is passed through an imino diacetate group chelating resin at an appropriate pH to separate and remove calcium.The elements absorbed in the resin are extracted using nitric acid and the fluorite sample is assayed preferably by laser abrasion inductively coupled plasma-mass spectrometry apparatus.The average weight rate of element (A) in refined product, ingot and annealed product is not greater than 100 ppb, preferably not greater than 50 ppb. EXAMPLE - Fluorite sample (3 g) was immersed in perfluoric acid and heated at 200degreesC for 20 minutes, and the surface was fused and removed. The sample was washed with ultra-pure water, immersed in perfluoro acid (15 ml), heated until it was dried and solidified. The hydrofluoric acid in the solution and the unreacted acid was removed, and the solution was dissolved in 3.4% diluted nitric acid. Further, perchloric acid was added and similar heating fusion and dissolution were performed. Finally, a diluted nitric acid solution in which a fluorite sample (3 g) was dissolved was obtained. The pH was adjusted to 6 using the ammonium water and the solution was bisected. Rare earth elements was added to one solution. The solutions were passed through imino diacetate chelating agents to separate metal elements and rare earth elements by absorption. Further, 0.2M ammonium acetate aqueous solution (5 ml) and ultra-pure water (5ml) were passed through the solutions. Finally, 1N nitric acid (10 ml) was passed to extract the absorbed elements. The solutions were assayed by inductively coupled plasma-mass spectrometry and was found that rare earth elements and metal elements were effectively removed. DC A91 (Ion-exchange resins, polyelectrolytes); E33 (Compounds of Be, Mg, Ca, Sr, Ba, Ra, Sc, Y, La, Ac, Al, lanthanides (Rare-earths), Th); J04 (Chemical/physical processes and apparatus including catalysis); L03 (Electro-(in)organic, chemical features of electrical devices); S03 (Scientific Instrumentation, photometry, calorimetry); V05 (Valves, Discharge Tubes and CRTs) MC A12-M; E11-Q01; E34-D02; J04-B01A; L03-F02B; L03-G02; S03-E10A6; V05-J01A1 IP G01N-033/20; G01N-033/00; C01F-011/22; C30B-011/00; G03F-007/20; G01N-027/62; C30B-029/12; G01N-001/28; G02B-001/02; H01S-003/131; G01N-021/73 PD US2003027349-A1 06 Feb 2003 G01N-033/20 200345 Pages: 17 English EP1310458-A2 14 May 2003 C01F-011/22 200345 English JP2003021619-A 24 Jan 2003 G01N-027/62 200345 Pages: 12 Japanese US7035306-B2 25 Apr 2006 H01S-003/131 200628 English EP1310458-B1 07 Apr 2010 C30B-011/00 201025 English DE60235864-E 20 May 2010 C01F-011/22 201034 German AD US2003027349-A1 US187799 03 Jul 2002 EP1310458-A2 EP254694 04 Jul 2002 JP2003021619-A JP205469 05 Jul 2001 US7035306-B2 US187799 03 Jul 2002 EP1310458-B1 EP254694 04 Jul 2002 DE60235864-E DE635864 04 Jul 2002 FD DE60235864-E EP application Application EP254694 DE60235864-E Based on Patent EP1310458 PI JP205469 05 Jul 2001 US187799 03 Jul 2002 DS EP1310458-A2: (Regional): AL; AT; BE; BG; CH; CY; CZ; DE; DK; EE; ES; FI; FR; GB; GR; IE; IT; LI; LT; LU; LV; MC; MK; NL; PT; RO; SE; SI; SK; TR EP1310458-B1: (Regional): DE; FR; GB; IT; NL CP EP1310458-A2 EP995820-A1 EP1037267-A1 EP869203-A2 CANON KK (CANO) OHBA T, ICHIZAKI T JP2000119097-A US7035306-B2 EP995820-A1 EP1037267-A1 EP869203-A2 CANON KK (CANO) OHBA T, ICHIZAKI T JP2000119097-A US4740982-A US6028880-A CYMER INC (CYME) CARLESI J R, ROKNI S, GONG M, WATSON T A, DAS P P, BINDER M C, TANTRA M, TAMMADGE D J, PATTERSON D G US6240117-B1 CYMER INC (CYME) GONG M, WATSON T A, DAS P P, SANDSTROM R L, DUFFEY T P US6804285-B2 US6878201-B2 US6930837-B2 CR EP1310458-A2 MOUCHOVSKI J T ET AL: "Growth of ultra-violet grade CaF2 crystals and their application for excimer laser optics" JOURNAL OF CRYSTAL GROWTH, NORTH-HOLLAND PUBLISHING CO. AMSTERDAM, NL, vol. 162, no. 1, 1 April 1996 (1996-04-01), pages 79-82, XP004017414 ISSN: 0022-0248 A. SIDIKE, K-H LEE, I KUSACH, N YAMASHITA: "Photoluminescence properties of a natural fluorite" JOURNAL OF MINERALOGICAL AND PETROLOGICAL SCIENCES, vol. 95, no. 8, 2000, pages 228-235, XP009015603 PATENT ABSTRACTS OF JAPAN vol. 2000, no. 07, 29 September 2000 (2000-09-29) & JP 2000 119097 A (NIKON CORP), 25 April 2000 (2000-04-25) A. SIDIKE, K-H LEE, I KUSACH, N YAMASHITA: "Photoluminescence properties of a natural fluorite" JOURNAL OF MINERALOGICAL AND PETROLOGICAL SCIENCES, vol. 95, no. 8, 2000, pages 228-235, XP009015603 MOUCHOVSKI J T ET AL: "Growth of ultra-violet grade CaF2 crystals and their application for excimer laser optics" JOURNAL OF CRYSTAL GROWTH, NORTH-HOLLAND PUBLISHING CO. AMSTERDAM, NL, vol. 162, no. 1, 1 April 1996 (1996-04-01), pages 79-82, XP004017414 ISSN: 0022-0248 PATENT ABSTRACTS OF JAPAN vol. 2000, no. 07, 29 September 2000 (2000-09-29) & JP 2000 119097 A (NIKON CORP), 25 April 2000 (2000-04-25) US7035306-B2 Aierken Sidike et al., "Photoluminescence Properties of a Natural Fluorite," 95 J. Menral. Petrol. Sci. 228-235 (2000). European Search Report in Application No. 02254694.9 (Aug. 22, 2003). J.T. Mouchovski et al., "Growth of Ultra-Violet Grade CaF2 Crystals and Their Application for Excimer Laser Optics," 162 J. Cryst. Growth 79-82 (1996). DN 2903-0-0-0-K P U CI R01819-K P RG 1819-P U UT DIIDW:2003479545 ER PT P PN US2003000920-A1; JP2003133295-A; DE10225925-A1; KR2003001079-A; KR2003001081-A; KR2003001129-A; US7125496-B2; DE10225925-B4; KR524812-B; KR524813-B; JP4389242-B2 TI Etching method used in semiconductor-device manufacture, involves forming photoresist pattern and polymer layer, and etching portion of etch target layer with mixture of specific fluorine-based, argon and oxygen gases. AU LEE S LEE S K LEE S G AE LEE S (LEES-Individual) HYUNDAI ELECTRONICS IND CO LTD (HYNX-C) HYNIX SEMICONDUCTOR INC (HYNX-C) HYNIX SEMICONDUCTOR INC (HYNX-C) HYNIX SEMICONDUCTOR INC (HYNX-C) HYUNDAI ELECTRONICS IND CO LTD (HYNX-C) GA 2003447340 AB NOVELTY - A photoresist layer is coated on an etch target layer. A photoresist pattern (25) is formed by developing the photoresist layer after exposing the photoresist layer with a light source having a wavelength of 157-193 nm. A polymer layer is formed and a portion of the target layer is etched simultaneously with a mixture of fluorine-based, argon and oxygen gases. USE - In semiconductor-device manufacture. ADVANTAGE - The etching method is capable of preventing the deformation of photoresist pattern formed by exposure with a light source. The hard mask prevents the gate electrode from being damaged during a subsequent self-align contact etch process. Fine patterns are formed, and the reliability is improved. The critical dimension is reduced. The etch tolerance of the photoresist patterns is improved by hardening the photoresist patterns with injection of argon or an electron beam. DETAILED DESCRIPTION - A photoresist layer is coated on an etch target layer. The photoresist pattern (25) is formed by developing the photoresist layer after exposing the photoresist layer with a light source having a wavelength of 157-193 nm. A polymer layer is formed and a portion of the etch target layer is etched simultaneously with a mixture of fluorine-based gas, argon gas and oxygen gas, where the fluorine-based gas is CxFy or CaHbFb, where x, y, a, b and c are 1-10. The etch target layer is etched using the polymer layer and the photoresist pattern as the etch mask. DESCRIPTION OF DRAWING(S) - The figure shows the cross-sectional view of a process performing contact by using an ArF lithography technology. photoresist pattern (25) TF TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Conditions: The polymer layer is formed by supplying approximately 5-20 sccm of fluorine-based gas, approximately 100-1000 sccm of argon gas, and approximately 1-5 sccm of oxygen gas. The polymer layer is formed at 25-80degreesC and 10-50 mTorr with a power of 500-2000 W for 10-60 seconds.Preferred Method: The photoresist pattern is hardened after forming the photoresist pattern. Argon ions are injected into the photoresist pattern during hardening. Argon ions are implanted by a dose of 1010/cm3-1015/cm3 with an energy of 100-300 KeV. The photoresist pattern is treated with argon plasma during hardening. Hardening is carried out at 1-10 mTorr with power of 500-2000 W. An electron beam is injected with an energy of 400-4000 muC/cm3 into the photoresist pattern during hardening. The photoresist pattern is hardened after forming the polymer layer. The photoresist pattern is flown at 100-220degreesC and normal pressure for 1-30 minutes using a hot plate, oven or an ultraviolet bake. TECHNOLOGY FOCUS - ELECTRONICS - Preferred Light Source: The light source is argon fluoride (ArF) laser or fluorine (F2) laser. TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compound: The photoresist layer is formed of cycloolefin-maleic anhydride (COMA) family or an acrylate family. DC A85 (Electrical applications); E13 (Heterocyclics); G06 (Photosensitive compositions and bases, photographic processes); L03 (Electro-(in)organic, chemical features of electrical devices); P78 (Decorative art); U11 (Semiconductor Materials and Processes); P84 (Other photographic) MC A08-C01; A08-D01; A12-E07C; A12-L02B2; E10-H04A3; E31-D02; E31-J; G06-D06; G06-E02; G06-F03C; G06-G17; G06-G18; L04-C06B1; L04-C07D; U11-C04E1; U11-C07A1 IP B44C-001/22; C03C-015/00; C03C-025/68; C23F-001/00; H01L-021/3065; G03F-007/40; H01L-021/027; H01L-021/3213; H01L-021/8242; H01L-027/108; G03F-007/36; H01L-021/28; H01L-021/00; H01L-021/02; H01L-021/70 PD US2003000920-A1 02 Jan 2003 C23F-001/00 200342 Pages: 18 JP2003133295-A 09 May 2003 H01L-021/3065 200342 Pages: 11 Japanese DE10225925-A1 06 Feb 2003 G03F-007/36 200342 German KR2003001079-A 06 Jan 2003 H01L-021/28 200342 KR2003001081-A 06 Jan 2003 H01L-021/28 200342 KR2003001129-A 06 Jan 2003 H01L-021/027 200342 US7125496-B2 24 Oct 2006 H01L-021/00 200670 English DE10225925-B4 02 Nov 2006 G03F-007/36 200676 German KR524812-B 02 Nov 2005 H01L-021/28 200682 JP4389242-B2 24 Dec 2009 H01L-021/3065 201001 Pages: 15 Japanese AD US2003000920-A1 US166421 10 Jun 2002 JP2003133295-A JP184629 25 Jun 2002 DE10225925-A1 DE1025925 11 Jun 2002 KR2003001079-A KR037409 28 Jun 2001 KR2003001081-A KR037411 28 Jun 2001 KR2003001129-A KR037495 28 Jun 2001 US7125496-B2 US166421 10 Jun 2002 DE10225925-B4 DE1025925 11 Jun 2002 KR524812-B KR037411 28 Jun 2001 KR524813-B KR037409 28 Jun 2001 JP4389242-B2 JP184629 25 Jun 2002 FD KR524812-B Previous Publ. Patent KR2003001081 KR524813-B Previous Publ. Patent KR2003001079 JP4389242-B2 Previous Publ. Patent JP2003133295 PI KR037409 28 Jun 2001 KR037411 28 Jun 2001 KR037495 28 Jun 2001 US166421 10 Jun 2002 FS x CP US7125496-B2 KR2000001567-A KR2001003218-A KR2001047179-A US4859573-A US5126289-A US5549784-A US5648198-A US5660957-A US6069087-A US6074569-A US6087063-A TOKYO OHKA KOGYO CO LTD (TOKQ) US6458671-B1 US6551446-B1 APPLIED MATERIALS INC (MATE-Non-standard) HANAWA H, YE Y, COLLINS K S, RAMASWAMY K, NGUYEN A, TANAKA T US6583065-B1 APPLIED MATERIALS INC (MATE-Non-standard) WILLIAMS R, CHINN J, TREVOR J, LILL T B, NALLAN P, VARGA T, MACE H US6635185-B2 ALLIED-SIGNAL INC (ALLC) DEMMIN T R, LULY M H, FATHIMULLA M A US6933236-B2 DE10225925-B4 US5895740-A US5908735-A US6218084-B1 JP4389242-B2 JP1307228-A HITACHI LTD (HITA); HTIACHI V L S I ENGINEER (HITA-Non-standard) JP2252233-A JP10004084-A JP10133377-A FUJITSU LTD (FUIT) JP2000091318-A JP2001068462-A SAMSUNG ELECTRONICS CO LTD (SMSU) CR US7125496-B2 Notice of Preliminary Rejection from Korean Intellectual Property Office (RE: Korean Priority Application No. 2001-37409) dated Mar. 21, 2005. Notice of Preliminary Rejection from Korean Intellectual Property Office (Re: Korean Priority Application No. 2001-37411) dated Mar. 21, 2005. Official action in foreign counterpart application dated Apr. 21, 2003, and ROC Patent Publication No. 334623. DN 217-0-0-0-K M U; 1376-0-0-0-K M; 790-0-0-0- MN 009130201 K M CI R01779-K M; R03186-K M; R00843- RG 1779-U UT DIIDW:2003447340 ER PT P PN US2003017640-A1 TI Semiconductor structure includes monocrystalline silicon substrate, amorphous oxide material, monocrystalline perovskite oxide material, monocrystalline compound semiconductor material, semiconductor component, and photosensitive material. AU FOLEY BARENBURG B YAMAMOTO J AE MOTOROLA INC (MOTI-C) GA 2003416892 AB NOVELTY - A semiconductor structure comprises sequential monocrystalline silicon substrate (22), amorphous oxide material (36), monocrystalline perovskite oxide material (38), monocrystalline compound semiconductor material (26), first semiconductor component, and photosensitive material. USE - As a semiconductor structure especially an optical interconnect. ADVANTAGE - The invention is compliant with a high quality monocrystalline material layer such that true two-dimensional growth can be achieved for the formation of quality semiconductor structures. DETAILED DESCRIPTION - A semiconductor structure comprises sequential monocrystalline silicon substrate, amorphous oxide material, monocrystalline perovskite oxide material, monocrystalline compound semiconductor material, first semiconductor component, and photosensitive material. The photosensitive material has a first portion forming a core, and a second portion forming a cladding of an optical waveguide that is configured to optically connect the first semiconductor component to a second semiconductor component. An INDEPENDENT CLAIM is also included for a method for fabricating the semiconductor structure. DESCRIPTION OF DRAWING(S) - The figure shows a cross-section of the inventive structure. Substrate (22) Monocrystalline compound semiconductor material (26) Amorphous oxide material (36) Monocrystalline perovskite oxide material (38) TF TECHNOLOGY FOCUS - ELECTRONICS - Preferred Component: The second semiconductor component is formed within the monocrystalline compound semiconductor material. The first semiconductor component is a vertical cavity surface emitting laser (VCSEL). The optical laser is an edge-emitting laser. The optical waveguide is formed with a radiation source directing radiation to the photosensitive material. The radiation source is a UV laser, or an excimer laser. The excimer laser is a krypton fluoride excimer laser, or an argon fluoride excimer laser. TECHNOLOGY FOCUS - POLYMERS - Preferred Material: The photosensitive material is a polyimide. TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Material: The photosensitive material is a chalcogenide-based material system. TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Material: The photosensitive material is a germanium-doped glass. DC A85 (Electrical applications); A26 (Other condensation polymers, silicone polymers, polymides); L03 (Electro-(in)organic, chemical features of electrical devices); U12 (Discrete Devices, e.g. LEDs, photovoltaic cells); V08 (Lasers and Masers); W01 (Telephone and Data Transmission Systems) MC A05-J01B; A12-E07C; L04-C12A; L04-E03B; U12-A01B1B; V08-A01A; V08-A04A; V08-A04B; V08-A04C2; W01-A06C1; W01-A06G3 IP H01S-005/00 PD US2003017640-A1 23 Jan 2003 H01S-005/00 200339 Pages: 34 English AD US2003017640-A1 US910035 23 Jul 2001 PI US910035 23 Jul 2001 UT DIIDW:2003416892 ER PT P PN US2003003659-A1; JP2003114534-A; KR2003001104-A; DE10228325-A1; KR2003049902-A; US6709986-B2; KR533967-B; DE10228325-B4; JP4081793-B2 TI Manufacture of semiconductor memory device involves forming photoresist pattern and mask pattern by selectively etching mask layer with gas except fluorine-based gases and selectively etching target layer. AU LEE S KIM S SUH W LEE M YOON K LEE S K KIM S I SUH W J LEE M S YOON K H LEE S G SEO W J YOON G H AE LEE S (LEES-Individual) KIM S (KIMS-Individual) SUH W (SUHW-Individual) LEE M (LEEM-Individual) YOON K (YOON-Individual) HYUNDAI ELECTRONICS IND CO LTD (HYNX-C) HYNIX SEMICONDUCTOR INC (HYNX-C) HYNIX SEMICONDUCTOR INC (HYNX-C) HYNIX SEMICONDUCTOR INC (HYNX-C) HYUNDAI ELECTRONICS IND CO LTD (HYNX-C) GA 2003380003 AB NOVELTY - A photoresist (PR) is coated on mask layer (15) formed on target layer (TL) and exposing PR using light resource of wave length 157-193 nm. A PR pattern is formed by developing PR. A mask pattern is formed by selectively etching mask layer with etching gas except fluorine-based gases using PR pattern as etching mask. TL is etched using mask pattern as etching mask, to produce a semiconductor memory device. USE - For manufacturing a semiconductor memory device. ADVANTAGE - The manufacturing method reduces the deformation of the photoresist pattern by using the chlorine-based etching gas during etching process. DETAILED DESCRIPTION - A photoresist is coated on a mask layer (15) formed on a target layer and exposing the photoresist using a light resource of wave length 157-193 nm. A photoresist pattern is formed by developing the photoresist. A mask pattern is formed by selectively etching the mask layer with an etching gas except fluorine-based gases using the photoresist pattern as etching mask. The target layer is etched using mask pattern as etching mask, to produce a semiconductor memory device. DESCRIPTION OF DRAWING(S) - The figure shows the cross-sectional view of the fabrication of a semiconductor device. semiconductor substrate (10) interlayer insulating layer (14) mask layer (15) TF TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The mask layer is formed with polysilicon, titanium nitride (TIN) or aluminum, preferably organic material.Preferred Source: The light source is an Argon fluoride (ArF) laser or fluorine (F2) laser.Preferred Etching Gas: The mask layer is etched using a chlorine-based such as Cl2, Cl3, BCl3, HCl, HBr or SiCl4 gas. The target layer is etched using a fluorine-based gas containing CxFy and CxHyFz, where x and y = 1-10.Preferred Method: A mask layer is formed on an interlayer insulating layer (14) on a semiconductor substrate (10). A photoresist is coated on the mask layer and is hardened by irradiating an electron beam on the photoresist or by implanting an argon ion in the photoresist. A photoresist pattern and a mask pattern are formed. A contact hole is formed by exposing the semiconductor substrate by selectively etching the interlayer insulating layer using the mask pattern as etching mask. A conductive layer having polysilicon layer is formed on the interlayer insulating layer including the contact hole. A plug is formed by etching the conductive layer and the mask pattern until the insulating layer is exposed and the conductive layer remains only in the contact hole. The conductive layer and mask pattern are removed by etch back process or a chemical mechanical polishing (CMP) process.Preferred Insulating Layer: The interlayer insulating layer is formed with a layer of APL (advanced Planarization layer) oxide, BPSG (borophosphosilicate glass), SOG (spin on glass) or HDP (high density plasma) oxide. TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Photoresist: The photoresist contains cycloolefin-maleic anhydride (COMA) and/or acrylate. DC A89 (Photographic, laboratory equipment, optical); G06 (Photosensitive compositions and bases, photographic processes); L03 (Electro-(in)organic, chemical features of electrical devices); U11 (Semiconductor Materials and Processes) MC A12-E07C; A12-L02B2; G06-D06; G06-E; G06-E04; G06-G18; L03-G04A; L04-C06; U11-C04D1; U11-C04E1; U11-C05D; U11-C07A; U11-C07D1; U11-C18B5 IP H01L-021/336; G03F-007/11; G03F-007/20; G03F-007/38; G03F-007/40; H01L-021/027; H01L-021/28; H01L-021/3065; H01L-021/768; H01L-021/308; H01L-021/8242; H01L-021/302; H01L-021/461; H01L-021/02; H01L-021/283; H01L-021/311; H01L-021/312; H01L-021/3213; H01L-021/60; H01L-021/70 PD US2003003659-A1 02 Jan 2003 H01L-021/336 200336 Pages: 10 JP2003114534-A 18 Apr 2003 G03F-007/11 200336 Pages: 7 Japanese KR2003001104-A 06 Jan 2003 H01L-021/28 200336 DE10228325-A1 09 Jan 2003 H01L-021/308 200336 German KR2003049902-A 25 Jun 2003 H01L-021/027 200373 US6709986-B2 23 Mar 2004 H01L-021/302 200421 English KR533967-B 07 Dec 2005 H01L-021/027 200680 DE10228325-B4 24 May 2007 H01L-021/312 200735 German JP4081793-B2 30 Apr 2008 G03F-007/11 200831 Pages: 10 Japanese AD US2003003659-A1 US175574 19 Jun 2002 JP2003114534-A JP184677 25 Jun 2002 KR2003001104-A KR037441 28 Jun 2001 DE10228325-A1 DE1028325 25 Jun 2002 KR2003049902-A KR080235 17 Dec 2001 US6709986-B2 US175574 19 Jun 2002 KR533967-B KR080235 17 Dec 2001 DE10228325-B4 DE1028325 25 Jun 2002 JP4081793-B2 JP184677 25 Jun 2002 FD KR533967-B Previous Publ. Patent KR2003049902 JP4081793-B2 Previous Publ. Patent JP2003114534 PI KR037441 28 Jun 2001 KR080235 17 Dec 2001 US175574 19 Jun 2002 FS 438637; 438700; 438706; 438771; 438776; 438788; 438789; 438790; 438792; 438795; x CP US6709986-B2 US4529475-A TOSHIBA KK (TOKE) OKANO H, HORIKE Y, SEKENI M US5279921-A TOSHIBA KK (TOKE) ONISHI Y, KOBAYASHI Y, NIKI H US6395434-B1 HOYA CORP (HOYA) NOZAWA O, MITSUI H, TAKEUCHI M US6420271-B2 TOSHIBA KK (TOKE) DE10228325-B4 DE19935825-A1 MURATA MFG CO LTD (MURA) KOSHIDO Y JP4081793-B2 JP2252233-A MATSUSHITA ELEC IND CO LTD (MATU) JP10010739-A LUCENT TECHNOLOGIES INC (LUCE) HOULIHAN F M, REICHMANIS E, NALAMASU O, WALLOW T I JP10098162-A HITACHI LTD (HITA) JP10209134-A TOSHIBA KK (TOKE) JP11017146-A HITACHI LTD (HITA) JP2000164865-A SHARP KK (SHAF) JP2000194128-A TOSHIBA KK (TOKE) JP2000195789-A SAMSUNG ELECTRONICS CO LTD (SMSU) JP2001053061-A HITACHI LTD (HITA) JP2001358218-A KITAGAWA H (KITA-Individual); SUZUKI N (SUZU-Individual) KITAGAWA H, SUZUKI N DN 790-0-0-0- CI R00843- UT DIIDW:2003380003 ER PT P PN WO2003014830-A1; EP1315997-A1; JP2003131400-A; US2003175624-A1; KR2004024529-A; JP3633595-B2; CN1802606-A; TW277831-B1; US2008274431-A1; KR914800-B1; EP2397901-A1; US8334091-B2; CN1802606-B TI Resist pattern swelling material for forming microscopic pattern, comprises water-soluble or alkali-soluble composition containing resin and cross-linking agent, and non-ionic interfacial active agent. AU NOZAKI K KOZAWA M NAMIKI T KON J YANO E OZAWA Y IMA J AE FUJITSU LTD (FUIT-C) FUJITSU LTD (FUIT-C) FUJITSU LTD (FUIT-C) FUJITSU LTD (FUIT-C) GA 2003354405 AB NOVELTY - A resist pattern swelling material comprises a water-soluble or alkali-soluble composition comprising a resin and a cross-linking agent, and a non-ionic interfacial active agent. USE - For devices including microscopic patterns for e.g. functional components such a mask pattern, reticle pattern, magnetic head, liquid crystal display (LCD), plasma display panel (PDP), surface acoustic wave (SAW) filter, optical components used for connection of optical wiring and microscopic components such as microactuator, and also for manufacturing logic devices, DRAM and FRAM. ADVANTAGE - The swelling material easily forms swelling pattern exceeding the limit of exposure using deep ultraviolet ray, such as eximer laser beam of argon fluoride which enables drawing of more microscopic patterns. The swelling material enables drawing of extremely microscopic pattern using the exposure beam in place of electron beam which provides a low throughput, thus maintaining mass-productivity for manufacture of devices. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following: (1) formation of microscopic pattern which involves swelling a resist pattern (1a) by coating above swelling material to cover the surface of resist pattern; (2) manufacture of miniaturized device which involves swelling a resist pattern by coating above swelling material to cover the surface of the resist pattern and patterning the underlying layer with the dry etching method with the resist pattern (after the swelling) used as mask; (3) manufacture of semiconductor device which involves swelling a resist pattern by coating above swelling material to cover the surface of resist pattern and patterning the underlying layer with dry etching method with the resist pattern as mask; and (4) resist pattern swelling method which involves coating the surface of a resist pattern with an aqueous solution containing an interfacial active agent, and coating the surface of resist pattern with a water-soluble composition. The interfacial active agent is chosen from polyoxyethylene-polyoxypropylene condensation product based, polyoxyalkylene alkylether based, polyoxyethylene alkylether based, polyoxyethylene derivative based, sorbitane fatty acid ether based, glycerine fatty acid ester based, primary alcohol ethoxylate based and phenol ethoxylate based interfacial active agents. The water-soluble composition comprises a resin composition comprising a resin chosen from polyvinyl alcohol, polyvinyl acetal and polyvinyl acetate, and a cross-linking agent chosen from melamine, urea and uryl derivatives. DESCRIPTION OF DRAWING(S) - The figure shows cross-sectional view of profile or resist pattern before and after swelling process. Photoresist film (1) Resist pattern (1a) Resist pattern swelling film (2) Interlayer insulation film (3) Swelled resist pattern (4) TF TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The water-soluble or alkali-soluble composition comprises a resin and a cross-linking agent, and at least one organic solvent chosen from alcohol based, chain ester based, cyclic ester based, ketone based, chain ether based and cyclic ether based organic solvents, preferably cyclic ether based organic solvent. The cross-linking agent is chosen from melamine, urea and uryl derivatives and a phenol based resin. The swelling material further comprises a solvent which does not easily dissolve a resist material, as the lower layer on which a resist pattern is already formed. The amount of polyvinyl acetal in the swelling material is 5-40 wt.%, among polyvinyl alcohol, polyvinyl acetal and polyvinyl acetate.Preferred Compounds: The resist pattern is acryl-based resist having the alicyclic group-based functional group in the side chain. The alicyclic group functional group is the adamantyl-based functional group or a norbornene-based functional group. The resist pattern is a COMA (cyclo-olefin maleic acid anhydride) based resist. The resist pattern is cyclo-olefin based resist including norbornene or adamantyl in the main chain.Preferred Process: The resist pattern swelling method further involves developing and removing the non-swelled layer of resist pattern with water or water-soluble alkali developer, preferably pure water. The resist pattern is formed by patterning a chemical amplified resist, conventional type resist, which is not a chemical amplified resist, or an electron beam exposurable resist. The resist pattern is comprised of several resist layers. DC A89 (Photographic, laboratory equipment, optical); G07 (Photo-mechanical production of printing surfaces); L03 (Electro-(in)organic, chemical features of electrical devices); P84 (Other photographic); U11 (Semiconductor Materials and Processes) MC A08-C01; A08-D01; A08-S01; A11-B05; A11-C02C; A12-E07C; A12-L02; A12-L02B2; G06-D06; G06-E; G06-E02; G06-E04; G06-F03C; G06-F03D; G06-G; G06-G17; G06-G18; L04-C06B; U11-C04A1B; U11-C04D; U11-C04E1 IP G03F-007/00; G03F-007/40; H01L-021/027; G03F-007/20; G03F-007/38; H01L-021/302; H01L-021/461 PD WO2003014830-A1 20 Feb 2003 G03F-007/00 200333 Pages: 74 English EP1315997-A1 04 Jun 2003 G03F-007/00 200337 English JP2003131400-A 09 May 2003 G03F-007/40 200339 Pages: 26 Japanese US2003175624-A1 18 Sep 2003 G03F-007/20 200362 English KR2004024529-A 20 Mar 2004 G03F-007/00 200445 JP3633595-B2 30 Mar 2005 G03F-007/40 200522 Pages: 37 Japanese CN1802606-A 12 Jul 2006 G03F-007/00 200675 Chinese TW277831-B1 01 Apr 2007 200824 Chinese US2008274431-A1 06 Nov 2008 G03F-007/20 200875 English KR914800-B1 02 Sep 2009 G03F-007/00 200963 EP2397901-A1 21 Dec 2011 G03F-007/00 201201 English US8334091-B2 18 Dec 2012 G03F-007/00 201282 English CN1802606-B 05 Dec 2012 G03F-007/00 201319 Chinese AD WO2003014830-A1 WOJP08224 12 Aug 2002 EP1315997-A1 EP758836 12 Aug 2002 JP2003131400-A JP230427 07 Aug 2002 US2003175624-A1 US408735 07 Apr 2003 KR2004024529-A KR705078 10 Apr 2003 JP3633595-B2 JP230427 07 Aug 2002 CN1802606-A CN802632 12 Aug 2002 TW277831-B1 TW118104 12 Aug 2002 US2008274431-A1 US213820 25 Jun 2008 KR914800-B1 KR705078 10 Apr 2003 EP2397901-A1 EP178785 12 Aug 2002 US8334091-B2 US213820 25 Jun 2008 CN1802606-B CN802632 12 Aug 2002 FD EP1315997-A1 PCT application Application WOJP08224 EP1315997-A1 Based on Patent WO2003014830 US2003175624-A1 Cont of Application WOJP08224 JP3633595-B2 Previous Publ. Patent JP2003131400 US2008274431-A1 Cont of Application WOJP08224 US2008274431-A1 Div ex Application US408735 KR914800-B1 PCT application Application WOJP08224 KR914800-B1 Based on Patent WO2003014830 KR914800-B1 Previous Publ. Patent KR2004024529 EP2397901-A1 Div ex Application EP758836 EP2397901-A1 Div ex Patent EP1315997 US8334091-B2 Div ex Application US408735 US8334091-B2 Cont of Application WOJP08224 CN1802606-B PCT application Application WOJP08224 CN1802606-B Based on Patent WO2003014830 PI JP245082 10 Aug 2001 JP230427 07 Aug 2002 DS WO2003014830-A1: (National): CN; KR; US (Regional): AT; BE; CH; CY; DE; DK; ES; FI; FR; GB; GR; IE; IT; LU; MC; NL; PT; SE; TR EP1315997-A1: (Regional): AT; BE; CH; CY; DE; DK; ES; FI; FR; GB; GR; IE; IT; LI; LU; MC; NL; PT; SE; TR EP2397901-A1: (Regional): DE; FR; GB; IT CP WO2003014830-A1 DE10014083-A1 MITSUBISHI DENKI KK (MITQ); RYODEN SEMICONDUCTOR SYSTEM ENG (RYOD-Non-standard) TANAKA M, ISHIBASHI T DE19843179-A1 MITSUBISHI DENKI KK (MITQ) ISHIBASHI T, TOYOSHIMA T, KATAYAMA K, YASUDA N EP1152036-A1 CLARIANT INT LTD (CLRN) KANDA T, TANAKA H EP1223470-A1 CLARIANT INT LTD (CLRN) KANDA T, TANAKA H EP1160083-A2 EP1162078-A2 FUJI PHOTO FILM CO LTD (FUJF) NAKAMURA I US5858620-A MITSUBISHI DENKI KK (MITQ) ISHIBASHI T, MINAMIDE A, TOYOSHIMA T, KATAYAMA K US6017675-A CIBA GEIGY AG (CIBA) DIETLIKER K, KUNZ M US20010031423-A1 JP3633595-B2 JP10073927-A MITSUBISHI DENKI KK (MITQ) ISHIBASHI T, MINAMIDE A, TOYOSHIMA T, KATAYAMA K JP11204399-A MITSUBISHI DENKI KK (MITQ) ISHIBASHI T, TOYOSHIMA T, KATAYAMA K, YASUDA N JP2001019860-A CLARIANT INT LTD (CLRN) KANDA T, TANAKA H JP2001066782-A MITSUBISHI DENKI KK (MITQ); RYODEN SEMICONDUCTOR SYSTEM ENG (RYOD-Non-standard) TANAKA M, ISHIBASHI T JP2001100428-A MITSUBISHI ELECTRIC CORP (MITQ); RYODEN SEMICONDUCTOR SYSTEM ENG (RYOD-Non-standard) TANAKA M, ISHIBASHI T JP2001109165-A CLARIANT INT LTD (CLRN) KANDA T, TANAKA H KR914800-B1 JP10073927-A MITSUBISHI DENKI KK (MITQ) ISHIBASHI T, MINAMIDE A, TOYOSHIMA T, KATAYAMA K JP11204399-A MITSUBISHI DENKI KK (MITQ) ISHIBASHI T, TOYOSHIMA T, KATAYAMA K, YASUDA N JP2001019860-A CLARIANT INT LTD (CLRN) KANDA T, TANAKA H JP2001066782-A MITSUBISHI DENKI KK (MITQ); RYODEN SEMICONDUCTOR SYSTEM ENG (RYOD-Non-standard) TANAKA M, ISHIBASHI T JP2001100428-A MITSUBISHI ELECTRIC CORP (MITQ); RYODEN SEMICONDUCTOR SYSTEM ENG (RYOD-Non-standard) TANAKA M, ISHIBASHI T JP2001109165-A CLARIANT INT LTD (CLRN) KANDA T, TANAKA H EP2397901-A1 DE10014083-A1 MITSUBISHI DENKI KK (MITQ); RYODEN SEMICONDUCTOR SYSTEM ENG (RYOD-Non-standard) TANAKA M, ISHIBASHI T DE19843179-A1 MITSUBISHI DENKI KK (MITQ) ISHIBASHI T, TOYOSHIMA T, KATAYAMA K, YASUDA N EP1152036-A1 CLARIANT INT LTD (CLRN) KANDA T, TANAKA H EP1223470-A1 CLARIANT INT LTD (CLRN) KANDA T, TANAKA H EP1160083-A2 EP1162078-A2 FUJI PHOTO FILM CO LTD (FUJF) NAKAMURA I US5858620-A MITSUBISHI DENKI KK (MITQ) ISHIBASHI T, MINAMIDE A, TOYOSHIMA T, KATAYAMA K US6017675-A CIBA GEIGY AG (CIBA) DIETLIKER K, KUNZ M US20010031423-A1 US8334091-B2 CN1222756-A MITSUBISHI DENKI KK (MITQ) ISHIBASHI T, TOYOSHIMA T, KATAYAMA K, YASUDA N DE10014083-A1 MITSUBISHI DENKI KK (MITQ); RYODEN SEMICONDUCTOR SYSTEM ENG (RYOD-Non-standard) TANAKA M, ISHIBASHI T DE19843179-A1 MITSUBISHI DENKI KK (MITQ) ISHIBASHI T, TOYOSHIMA T, KATAYAMA K, YASUDA N EP1152036-A1 CLARIANT INT LTD (CLRN) KANDA T, TANAKA H EP1223470-A1 CLARIANT INT LTD (CLRN) KANDA T, TANAKA H EP1160083-A2 EP1162078-A2 FUJI PHOTO FILM CO LTD (FUJF) NAKAMURA I JP06250379-A JP10073927-A MITSUBISHI DENKI KK (MITQ) ISHIBASHI T, MINAMIDE A, TOYOSHIMA T, KATAYAMA K JP11204399-A MITSUBISHI DENKI KK (MITQ) ISHIBASHI T, TOYOSHIMA T, KATAYAMA K, YASUDA N JP2001019860-A CLARIANT INT LTD (CLRN) KANDA T, TANAKA H JP2001100428-A MITSUBISHI ELECTRIC CORP (MITQ); RYODEN SEMICONDUCTOR SYSTEM ENG (RYOD-Non-standard) TANAKA M, ISHIBASHI T KR2001047840-A US4668758-A US4778767-A US5858620-A MITSUBISHI DENKI KK (MITQ) ISHIBASHI T, MINAMIDE A, TOYOSHIMA T, KATAYAMA K US5932391-A TOSHIBA KK (TOKE) GOKOCHI T, KIHARA N, ASAKAWA K, SHINODA N, NAKASE M, OKINO T US6017675-A CIBA GEIGY AG (CIBA) DIETLIKER K, KUNZ M US20010031423-A1 US20030157801-A1 US6228552-B1 TOSHIBA KK (TOKE) OKINO T, ASAKAWA K, SHINODA N, GOKOCHI T, NAKASE M US6319853-B1 MITSUBISHI DENKI KK (MITQ) ISHIBASHI T, TOYOSHIMA T, KATAYAMA K, YASUDA N US6372689-B1 RICOH KK (RICO) KUGA Y, MOCHIZUKI H, SEKIYAMA Y US6537719-B1 CLARIANT INT LTD (CLRN); CLARIANT JAPAN KK (CLRN) TAKAHASHI S US6579657-B1 MITSUBISHI DENKI KK (MITQ) ISHIBASHI T, TOYOSHIMA T, MINAMIDE A, KATAYAMA K US6964839-B1 US6537718-B2 NISHIYAMA F (NISH-Individual); FUJIMORI T (FUJI-Individual) NISHIYAMA F, FUJIMORI T US6569778-B2 LEE S (LEES-Individual); HWANG C (HWAN-Individual) LEE S, HWANG C WO2001025854-A1 CR US8334091-B2 "Design of cycloolefin-maleic anhydride resist for ArF lithography", Proc SPIE, vol. 3333, pp. 11-25, Feb. 1998. Korean Office Action dated Aug. 19, 2008 of KR 10-2003-7005078. Chinese Office Action dated Nov. 28, 2008, issued in corresponding Chinese Application No. 028026322. DN 829-0-0-0-; 790-0-0-0-; 55505-0-0-0-; 444-0-0-0-; 238-0-0-0- CI R00835-; R00843-; R01289-; R00351-; R00370- UT DIIDW:2003354405 ER PT P PN US2002185701-A1; US6876689-B2 TI Diode laser injection seeded, cavity length stabilized ring laser for providing laser light sources for e.g. holography, has semiconductor diode laser source, ring laser optical resonator cavity, and mirror or fiber optic system. AU WALLING J C HELLER D F AE WALLING J C (WALL-Individual) HELLER D F (HELL-Individual) LIGHT AGE INC (LIGH-Non-standard) GA 2003288425 AB NOVELTY - A diode laser injection seeded, cavity length stabilized ring laser has: (i) a semiconductor diode laser source; (ii) a ring laser optical resonator cavity; and (iii) a mirror or fiber optic system for coupling a light beam from the laser source into the resonator cavity. The resonator cavity incorporates a tunable solid-state laser material. It is injected with the light beam from the diode laser source. USE - Useful for providing laser light sources for detecting and monitoring atmospheric pollutants and trace elements; laboratory spectroscopy; optical interferometry; laser metrology; holography; and high resolution photolithography, especially at 248 and 193 nm wavelengths. ADVANTAGE - The device is capable of providing output light pulses over all wavelength ranges in an electromagnetic (e.g., infrared, UV, and visible) spectrum. When suitably configured, it creates wavelength tunable or fixed wavelength pulses having spectral bandwidths that are Fourier transform limited and wavelength stabilized. DESCRIPTION OF DRAWING(S) - The figure is a diagram of an amplified, narrow bandwidth UV laser system. Semiconductor diode laser source (1) Mirror or fiber optic system (2) Ring laser optical resonator cavity (3) Harmonic generator crystals (5-7) Optical isolator (8) Telescope (9) Excimer laser amplifier (10) Injection coupler (11) Pockels cell (12) Beam pick-off (13) Pump chambers (14) Polarization rotator and compensating lens (15) Optical modulator (17) Birefringent tuning device (18) TF TECHNOLOGY FOCUS - ELECTRONICS - Preferred Component: The semiconductor diode laser source (1) is a continuous wave external cavity semiconductor diode laser; or a distributed feedback semiconductor diode laser.The ring laser optical resonator cavity (3) comprises:(a) an injection coupler (11) to align the injected light beam with the resonator;(b) pump chambers (14);(c) a polarization rotator and compensating lens (15); and(d) a birefringent tuning device (18).The mirror or fiber optic system (2) incorporates a faraday rotator for optically isolating the diode laser source from optical feedback from the ring laser. The faraday rotator is between two suitably oriented polarizers and an optical modulator (17). The optical resonator further comprises a stabilizing system that stabilizes its optical cavity length. The stabilizing system comprises a beam pick-off (13) coupled to an electronic mechanism for discharging or firing a pockels cell (12) when the optical length of the cavity is such that the injected semiconductor laser light is resonant with a laser cavity mode.The ring laser further comprises an intra- and/or extra-cavity nonlinear element for converting an output wavelength of the laser system to wavelengths that are either longer or shorter than a fundamental wavelength that is resonant with the ring laser cavity; and an excimer laser amplifier (10) including a gaseous discharge tube.The intra- and/or extra-cavity nonlinear element comprises;(A) harmonic generator crystals (5-7);(B) nonlinear sum or difference frequency generators;(C) optical parametric oscillators; and(D) solid, liquid or gas phase raman convectors.The gaseous discharge tube contains a mixture of krypton fluoride and argon fluoride. The laser amplifier is connected to one or more harmonic generators by a telescope (9) and/or an optical isolator (8). The diode layer source is tunable without mode hopping over a wavelength of 700-1000 (preferably 710-850) nm.Preferred Property: The diode laser source has a spectral bandwidth of at most10 MHz. TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Material: The tunable solid state laser material is alexandrite, chromium lithium calcium aluminum fluoride, or titanium sapphire. DC L03 (Electro-(in)organic, chemical features of electrical devices); V07 (Fibre-optics and Light Control); V08 (Lasers and Masers); W02 (Broadcasting, Radio and Line Transmission Systems) MC L04-E03B; V07-F02; V08-A01A1; V08-A02; W02-C04B1 IP H01L-031/00; H01S-003/083 PD US2002185701-A1 12 Dec 2002 H01L-031/00 200328 Pages: 4 English US6876689-B2 05 Apr 2005 H01S-003/083 200523 English AD US2002185701-A1 US876678 07 Jun 2001 US6876689-B2 US876678 07 Jun 2001 PI US876678 07 Jun 2001 FS 372/18; 372/32; 372/57; 372/70; 372/71; 372/72; 372/93; 372/94; 372/96 CP US6876689-B2 US5164954-A UNIV TEXAS A & M SYSTEM (TEXA) SU C US5172382-A CORNELL RES FOUND INC (CORR) LOH W, SCHREMER A T, OZEKI Y, TANG C L US5243610-A US5251230-A US5260953-A ALCON SURGICAL INC (ALCO) ROWE T S US5307358-A US SEC OF NAVY (USNA) SCHEPS R US5349598-A CANON KK (CANO) OUCHI T, SAKATA H US5442442-A LITTON SYSTEMS INC (LITO) RAHN J P, KANEGSBERG E, GILLESPIE S C US5673281-A UNIV LELAND STANFORD JUNIOR (STRD) BYER R L US6009114-A US6173000-B1 BALLA R J (BALL-Individual) BALLA R J UT DIIDW:2003288425 ER PT P PN JP2003057815-A TI Chemical amplifying positive resin composition for precision processing of semiconductor, comprises resin insoluble in aqueous alkali solution and soluble by acid, acid generating agent and biadamantane derivative. AU ARAKI K FUJISHIMA H AE SUMITOMO CHEM CO LTD (SUMO-C) GA 2003244168 AB NOVELTY - The chemical amplifying positive resin composition comprises a resin insoluble in aqueous alkali solution. The resin is soluble in aqueous alkali solution by the effect of an acid, an acid generating agent and a biadamantane derivative. USE - For precision processing of semiconductors, krypton fluoride and argon fluoride excimer laser lithography. ADVANTAGE - The chemical amplifying positive resin composition provides resist pattern having improved line edge roughness and favorable resist properties such as sensitivity and resolving degree. DC P84 (Other photographic); U11 (Semiconductor Materials and Processes) MC U11-C04D; U11-C04E1 IP G03F-007/004; G03F-007/039; H01L-021/027 PD JP2003057815-A 28 Feb 2003 G03F-007/004 200324 Pages: 7 Japanese AD JP2003057815-A JP300866 28 Sep 2001 PI JP169268 05 Jun 2001 UT DIIDW:2003244168 ER PT P PN WO200292651-A1; US2003013831-A1; US6486282-B1; US6686429-B2; EP1392745-A1; KR2004029978-A; JP2004529245-W; TW583200-A; CN1537124-A; CN1266177-C; MY129646-A TI Cyano containing copolymer for photoresist for imaging negative and positive patterns, comprises at least one ethylenic unit containing cyano groups, and at least one cyclic unit. AU DAMMEL R R SAKAMURI R AE CLARIANT INT LTD (CLRN-C) CLARIANT FINANCE BVI LTD (CLRN-C) DAMMEL R R (DAMM-Individual) SAKAMURI R (SAKA-Individual) CLARIANT FINANCE BVI LTD (CLRN-C) CLARIANT FINANCE BVI LTD (CLRN-C) CLARIANT FINANCE BVI LTD (CLRN-C) AZ ELECTRONIC MATERIALS JAPAN KK (AZEL-Non-standard) GA 2003229253 AB NOVELTY - A cyano containing copolymer comprises at least one ethylenic unit containing cyano group(s), and at least one cyclic unit. USE - In photoresist for imaging negative and positive patterns in the production of semiconductor devices. ADVANTAGE - The polymer has high transparency in the deep ultraviolet region. When used as photoresist composition, it is especially useful for exposure at below 200 nm. The copolymer provides good lithographic performance when it is formulated into photoresist and has good dry etch resistance. DETAILED DESCRIPTION - A cyano containing copolymer comprises at least one ethylenic unit (I) containing at least one cyano group, and at least one cyclic unit (II). R1-R4 = H, alkyl, O-alkyl, (perfluoro)alkyl ester, carboxylic acid, alkylcarbonyl, carboxylate, cyano, fluoroalkyl, acid or base labile group, alkylsulfonyl, sulfonate, (alkyl)sulfonamide, and at least one of R1-R4 contains cyano group; R5-R14 = H, 1-6C alkyl, halogen, carboxylic acid, 1-10C alkylOCOalkyl, cyano, 1-10C secondary or tertiary carboxylate, substituted pinacol and R7, R8 are optionally linked to form a cyclic non-aromatic structure, fluoroalkyl, W(CF3)2OH; W = 1-6C alkyl or 1-6C alkyl ether, or acid or base labile group; R15-R16 = H or 1-4C alkyl; and m = 0-3. An INDEPENDENT CLAIM is included for preparation of copolymer which involves reacting monomer (III) with a monomer (IV) in presence of a radical initiator, in a solvent medium at preset temperature and for preset time. R1-R16 and m = same as defined above. TF TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compounds: 30 acid labile groups are claimed such as t-pentyl oxycarbonyl or beta-oxy-beta-methyl-gamma-butyrolactone and acid labile is connected directly to the polymer backbone or through a connecting group. The solvent used in the preparation of copolymer is chosen from tetrahydrofuran, dioxane and toluene. The free radical initiator is 2,2'-azobisisobutyronitrile. The reaction mixture further comprises an acid preferably acetic acid. The reaction is performed for 1-24 hours at 25-150degreesC. TECHNOLOGY FOCUS - POLYMERS - Preferred Properties: The copolymer comprises at least 40 mol %, preferably less than 80 mol % of ethylenic unit. The weight average molecular weight of the copolymer is less than 200000, preferably greater than 1000. The copolymer further comprises additional comonomers chosen from (meth)acrylates, (hydroxy)styrene, hydroxyhexafluoroisopropylstyrene, vinyl ethers, vinyl acetates, tetrafluoroethylene, maleic anhydride, itaconic anhydride and their fluorinated homologues. The copolymer has an absorption coefficient at an exposure wavelength of less than 4/micron. The manufacture process further comprises drowning the polymer in a non solvent chosen from hexane, heptane and diethyl ether.Preferred Monomer: The ethylenic unit is derived from monomers of formulae (Va-e) and cyclic unit is derived from monomers of formulae (VIa-VId). Preferred Definitions: R7, R8 = link to form a lactone or anhydride. EXAMPLE - To a 35 ml pressure tube equipped with Teflon coated stir bar and a threaded Teflon cap with O-ring, methyl 2-cyanoacrylate (1.46 g), t-butylnorbornene carboxylate (2.54 g), tetrahydrofuran (THF) (4 g), 2,2'-azobisisobutyronitrile (120 mg) and acetic acid (200 mg) were added. The reaction mixture was de-aerated with nitrogen at a flow rate of 30 ml/minute for 15 minutes. The vessel was then immediately capped tight using the Teflon screw tap. The vessel was placed in an oil bath, which was preheated to 72degreesC. The reaction was allowed to proceed for 3 hours. The viscous reaction mass was cooled to room temperature and diluted with THF (20.5 ml). The solution was poured drop wise into hexane (75 ml) while stirring. The white methyl 2-cyanoacrylate/t-butylnorbornene carboxylate copolymer was filtered, washed with hexane and dried overnight in vacuum oven at 55degreesC. The isolated polymer had a yield of 64/6%. The polymer contained blocks of methyl cyanoacrylate. The weight average molecular weight and number average molecular weight of the copolymer were 5612 and 2349, respectively. The polydispersity of the copolymer was 2.39 and glass transition temperature was 137degreesC. The obtained copolymer was dissolved in PGMEA to make 11.5% solution. To the solution, 5% triphenylsulfonium nonafluoro butane sulfonate was added. The resist composition was then spin coated over a silicon wafer which was pretreated with hexamethyl silazane and coated with 39 nm thick bottom anti-reflective coating. The substrate was baked at 110degreesC for 90 seconds to obtain 390 nm photoresist film. The film was then exposed with argon fluoride excimer laser stepper using binary mask. The exposed film was baked at 150degreesC for 90 seconds on a hot plate and the pattern was developed using 0.265 N tetramethyl ammonium hydroxide. 0.16 mum line space patterns were resolved at a dose of 13 mJ/cm2. DC A14 (Other substituted mono-olefins, PVC, PTFE); A13 (Aromatic mono-olefins, including polystyrene); A89 (Photographic, laboratory equipment, optical); G06 (Photosensitive compositions and bases, photographic processes); L03 (Electro-(in)organic, chemical features of electrical devices); P84 (Other photographic); U11 (Semiconductor Materials and Processes) MC A04-A; A04-D01; A04-E; A04-E10; A04-F; A12-E07C; A12-L02B2; G06-D06; G06-F03C; G06-F03D; L04-C05; U11-A06A IP C08F-222/30; C08F-220/42; C08F-232/08; G03F-007/039; C08F-120/42; C08F-006/12; C08F-020/00; G03F-007/04 PD WO200292651-A1 21 Nov 2002 C08F-222/30 200322 Pages: 31 English US2003013831-A1 16 Jan 2003 C08F-120/42 200322 English US6486282-B1 26 Nov 2002 C08F-120/42 200322 English US6686429-B2 03 Feb 2004 C08F-120/42 200413 English EP1392745-A1 03 Mar 2004 C08F-222/30 200417 English KR2004029978-A 08 Apr 2004 G03F-007/039 200453 JP2004529245-W 24 Sep 2004 C08F-220/42 200463 Pages: 50 Japanese TW583200-A 11 Apr 2004 C08F-020/00 200468 Chinese CN1537124-A 13 Oct 2004 C08F-222/30 200508 Chinese CN1266177-C 26 Jul 2006 C08F-222/30 200678 Chinese MY129646-A 30 Apr 2007 C08F-120/42 201432 English AD WO200292651-A1 WOEP04557 25 Apr 2002 US2003013831-A1 US854312 11 May 2001 US6486282-B1 US854312 11 May 2001 US6686429-B2 US854312 11 May 2001 EP1392745-A1 EP732666 25 Apr 2002 KR2004029978-A KR714596 10 Nov 2003 JP2004529245-W JP589530 25 Apr 2002 TW583200-A TW105206 19 Mar 2002 CN1537124-A CN809711 25 Apr 2002 CN1266177-C CN809711 25 Apr 2002 MY129646-A MY001679 09 May 2002 FD EP1392745-A1 PCT application Application WOEP04557 EP1392745-A1 Based on Patent WO200292651 JP2004529245-W PCT application Application WOEP04557 JP2004529245-W Based on Patent WO200292651 PI US854312 11 May 2001 DS WO200292651-A1: (National): CN; JP; KR; SG (Regional): AT; BE; CH; CY; DE; DK; ES; FI; FR; GB; GR; IE; IT; LU; MC; NL; PT; SE; TR EP1392745-A1: (Regional): AL; AT; BE; CH; CY; DE; DK; ES; FI; FR; GB; GR; IE; IT; LI; LT; LU; LV; MC; MK; NL; PT; RO; SE; SI; TR FS 430/270.1; 526/219.6; 526/245; 526/282; 526/297; 526/328.5; 526/342 CP WO200292651-A1 GB2370367-A SUMITOMO CHEM CO LTD (SUMO) UETANI Y, HASHIMOTO K, FUJISHIMA H JP04366959-A JP07196743-A JP11102065-A JP2001194786-A US3697490-A US3700648-A US4395481-A US5843624-A LUCENT TECHNOLOGIES INC (LUCE) HOULIHAN F M, REICHMANIS E, NALAMASU O, WALLOW T I WO2001037047-A2 US6486282-B1 GB2320718-A HYUNDAI ELECTRONICS IND CO LTD (HYNX) JUNG J C, BOK C K, BAIK K H US4491628-A IBM CORP (IBMC) ITO H, WILLSON C G, FRECHET J M J US4812546-A US5350660-A WAKO PURE CHEM IND LTD (WAKP) URANO F, NAKAHATA M, OONO K US5399647-A US5843624-A LUCENT TECHNOLOGIES INC (LUCE) HOULIHAN F M, REICHMANIS E, NALAMASU O, WALLOW T I US6165674-A SHIPLEY CO LLC (SHIL) TAYLOR G N, BARCLAY G G, SZMANDA C R WO2000017712-A1 WO2000067072-A1 WO2001037047-A2 US6686429-B2 GB2320718-A HYUNDAI ELECTRONICS IND CO LTD (HYNX) JUNG J C, BOK C K, BAIK K H GB2370367-A SUMITOMO CHEM CO LTD (SUMO) UETANI Y, HASHIMOTO K, FUJISHIMA H JP04366959-A JP07196743-A JP11102065-A JP2001194786-A US3697490-A US3700648-A US4395481-A US4491628-A IBM CORP (IBMC) ITO H, WILLSON C G, FRECHET J M J US4812546-A US5350660-A WAKO PURE CHEM IND LTD (WAKP) URANO F, NAKAHATA M, OONO K US5399647-A US5843624-A LUCENT TECHNOLOGIES INC (LUCE) HOULIHAN F M, REICHMANIS E, NALAMASU O, WALLOW T I US6165674-A SHIPLEY CO LLC (SHIL) TAYLOR G N, BARCLAY G G, SZMANDA C R US6503686-B1 DU PONT DE NEMOURS & CO E I (DUPO) FRYD M, SCHADT F L, PERIYASAMY M WO2000017712-A1 WO2000067072-A1 WO2001037047-A2 CR WO200292651-A1 DATABASE WPI Week 199305 Derwent Publications Ltd., London, GB; AN 1993-041023 XP002214461 -& JP 04 366959 A (TOA GOSEI CHEM IND LTD) , 18 December 1992 (1992-12-18) PATENT ABSTRACTS OF JAPAN vol. 1995, no. 11, 26 December 1995 (1995-12-26) -& JP 07 196743 A (FUJITSU LTD), 1 August 1995 (1995-08-01) DATABASE CAPLUS [Online] CHEMICAL ABSTRACTS SERVICE, COLUMBUS, OHIO, US; MAZO, L. D. ET AL: "Synthesis of acrylonitrile copolymers containing highly reactive anhydride groups" retrieved from STN Database accession no. 68:96225 XP002214460 & ZH. PRIKL. KHIM. (LENINGRAD) (1968), 41(3), 670-3 , DATABASE CAPLUS [Online] CHEMICAL ABSTRACTS SERVICE, COLUMBUS, OHIO, US; MAZO, L. D. ET AL: "Synthesis of acrylonitrile copolymers containing highly reactive anhydride groups" retrieved from STN Database accession no. 68:96225 XP002214460 & ZH. PRIKL. KHIM. (LENINGRAD) (1968), 41(3), 670-3 , DATABASE WPI Week 199305 Derwent Publications Ltd., London, GB; AN 1993-041023 XP002214461 -& JP 04 366959 A (TOA GOSEI CHEM IND LTD) , 18 December 1992 (1992-12-18) PATENT ABSTRACTS OF JAPAN vol. 1995, no. 11, 26 December 1995 (1995-12-26) -& JP 07 196743 A (FUJITSU LTD), 1 August 1995 (1995-08-01) US6686429-B2 Akiko Kodachi, Japanese Abstract, 07196743, "Radiation-Sensitive Material and Method for Forming Pattern". Copy of International Report. L. D. Mazo et al, Abstract, XP-002214460-"Synthesis of acrylonitrile copolymers containing highly reactive anhydride groups", Caplus Online, Chemical Abstracts Service. DN 368-0-0-0-; 829-0-0-0-; 104333-0-0-0-; 790-0-0-0-; 7490-0-0-0-; 131203-0-0-0-; 192-0-0-0-; 19-0-0-0-; 26-0-0-0-; 30-0-0-0-; 1-0-0-0- CI R00708-; R00835-; R00975-; R00843-; R00654-; R10232-; R00426-; R00895-; R00862-; R01057-; R00247- UT DIIDW:2003229253 ER PT P PN US2002151115-A1 TI Production of thin film used in semiconductor devices, involves irradiating raw thin film containing volatile gas with excimer laser beam having preset pulse width and removing volatile gas from film. AU NAKAJIMA H NEGORO Y USUI S AE SONY CORP (SONY-C) GA 2003209082 AB NOVELTY - A raw thin film containing a volatile gas is irradiated with excimer laser beam having a pulse width of 60 ns or more. The volatile gas is removed from the raw thin film and a thin film is produced. USE - For producing thin film such as semiconductor thin film used in semiconductor devices (both claimed) and also used in thin film transistors and liquid crystal display devices. ADVANTAGE - The amount of volatile gas such as hydrogen present in the thin film is reduced effectively, without reducing productivity and breaking the thin film. By irradiating the raw thin film with excimer laser beam having pulse width of 60 ns or more, the degassing of the raw thin film is performed within short time and smaller amount of energy/unit time is injected into the thin film. The entire thin film is heated uniformly because heat due to energy absorption dissipates in the thickness direction of the thin film before the surface temperature of the thin film rises excessively. The uniform heating of the thin film provides uniform degassing and effective removal of volatile gas from the thin film. By irradiating with excimer laser beam which has energy converted into heat upon absorption in the vicinity of the surface of the thin film, the heat generated does not melt the thin film in the vicinity surface. Thus crystallization is not obtained, because the temperature in region of the thin film remains less than the crystallizing temperature of the thin film material. Since the semiconductor thin film absorbs the laser energy in the surface layer which melts, thus allowing the volatile gas to vaporize instantaneously and thus the volatile gas is released uniformly from the entire surface of the thin film. The heated portion of the thin film melts and the melting process causes the volatile gas to release from the film and the volatile gas released is made in the form of microbubbles. The microbubble absorbs evaporation heat and cools the thin film. Thus, nucleation is achieved quickly and uniformly. Thus the thin film has uniform grain size. The semiconductor device and thin film transistor having the thin film, are produced efficiently, and have high performance and quality. The variation in characteristics of thin film transistor is prevented. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a semiconductor thin film which contains less volatile gas than the raw thin film as a result of irradiation with the excimer laser beam; (2) a semiconductor device which has the semiconductor thin film provided on a substrate; (3) production of a semiconductor thin film which involves forming a raw semiconductor thin film on a substrate. The raw semiconductor thin film is irradiated with an excimer laser beam and volatile gas are removed from the thin film. The degassed semiconductor thin film is irradiated again with energy beam and the degassed semiconductor thin film is crystallized; and (4) an apparatus for producing the semiconductor thin film which has a treatment chamber (I) in which a raw semiconductor thin film is formed on a substrate (49), and a treatment chamber (II) adjacent to the treatment chamber (I) in which the substrate is irradiated with the excimer laser beam for removing the volatile gas from the raw semiconductor thin film. DESCRIPTION OF DRAWING(S) - The figure shows the schematic diagram of the apparatus for producing semiconductor thin film. substrate (49) TF TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The raw thin film contains at least 2 atom% of volatile gas and atoms forming the volatile gas is selected from hydrogen, helium, argon, neon, krypton and/or xenon. The raw thin film is a semiconductor thin film such as amorphous silicon film or polycrystalline silicon film. The thin film contains hydrogen atom, fluorine atom, chlorine atom, helium atom, argon atom, neon atom, krypton atom and/or xenon atom. Preferred Excimer Laser: The excimer laser is selected from argon, krypton, xenon, fluorine, chlorine, krypton fluoride, krypton chloride, xenon chloride, xenon fluoride, xenon bromide, xenon iodide, argon fluoride, argon chloride, mercury chloride (HgCl), mercury bromide (HgBr), mercury iodide (HgI), mercury cadmium (HgCd), cadmium iodide, cadmium bromide, zinc iodide, sodium xenon, xenon thallium, argon oxide, xenon oxide, xenon sulfur, krypton sulfur, xenon selenium, magnesium (Mg2) and/or mercury (Hg2), preferably xenon chloride. The irradiation is performed with excimer laser beams differing in intensity which is achieved by repeating irradiation with laser beam having intensity of 300 mJ/cm2 or less and irradiation with laser beam having intensity of 300 mJ/cm2 or more. The excimer laser beam has a pulse width of 60-300 ns, preferably 120-230 ns, and intensity of irradiation energy of 250-450 mJ/cm2. Preferred Process: The raw thin film is formed by plasma chemical vapor deposition (CVD), low-pressure CVD, atmospheric CVD, catalytic CVD, photo CVD and/or laser CVD, and has a thickness of more than 1 nm, preferably 10-100 nm. The raw thin film is irradiated such that at least one region in the thickness direction of the thin film remains at a temperature less than the recrystallizing temperature of the material of the thin film and temperature in the vicinity surface of the thin film is less than or more than the recrystallizing temperature, preferably 800-1100degreesC. The temperature in the portion at a specific depth from the thin film surface is 800-1000degreesC. By irradiating thin film, the volatile gas is removed and thin film is crystallized, simultaneously. The irradiation with excimer laser beam more than once, is performed such that the position of irradiation is shifted each time, so that the region of preceding irradiation partly overlaps or adjoins the region of succeeding irradiation. The portion for irradiation is irradiated with spatially modulated excimer laser and spatial modulation is modulation of energy intensity. The modulation is performed such that intensity of irradiation energy decreases as the laser beam advances. The substrate of the semiconductor device is a glass substrate. The irradiation is performed without the apparatus opened to atmospheric air. DC L03 (Electro-(in)organic, chemical features of electrical devices); U11 (Semiconductor Materials and Processes); U12 (Discrete Devices, e.g. LEDs, photovoltaic cells); U14 (Memories, Film and Hybrid Circuits, Digital memories) MC L03-G05B; L04-E01E; U11-C01B; U11-C01J2; U11-C03D; U11-C18A1; U12-B03A; U14-H01A; U14-K01A2B IP H01L-021/00; H01L-021/76; H01L-021/84 PD US2002151115-A1 17 Oct 2002 H01L-021/00 200320 Pages: 28 English AD US2002151115-A1 US027054 20 Dec 2001 FD US2002151115-A1 CIP of Application US946654 PI JP269216 05 Sep 2000 UT DIIDW:2003209082 ER PT P PN US2002081504-A1; JP2002214804-A; KR2002054120-A; US6787285-B2; JP3837328-B2; KR546098-B1 TI Preparation of photoresist pattern for semiconductor element comprises coating substrate with photoresist composition containing thermal acid generator, exposing and developing film and heating photoresist pattern. AU KONG K K PARK G D JUNG J C SHIN K S KO K KONG G G SHIN G S AE KONG K K (KONG-Individual) PARK G D (PARK-Individual) JUNG J C (JUNG-Individual) SHIN K S (SHIN-Individual) HYUNDAI ELECTRONICS IND CO LTD (HYNX-C) HYNIX SEMICONDUCTOR INC (HYNX-C) HYNIX SEMICONDUCTOR INC (HYNX-C) GA 2003174013 AB NOVELTY - Preparation of photoresist pattern comprises: (1) coating substrate with photoresist composition containing a thermal acid generator; (2) exposing the photoresist film; (3) developing the exposed photoresist film; and (4) heating the photoresist pattern. USE - For semiconductor element (claimed). ADVANTAGE - The photoresist pattern is heated during which thermal generator generates acid and the cross-linking reaction occurs to photoresist composition, thereby preventing pattern width slimming due to scanning electron microscope beam for critical dimension measurement. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a semiconductor element made by the above method. TF TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The photoresist composition further comprises chemically amplified photoresist resin, photoacid generator and organic solvent. The thermal acid generator is cyclic hexanol of formulae (I) and (IV), cyclic pentanol of formulae (II) and (III) or alcohol comprising a leaving group.The leaving group is on an ortho-position of a hydroxyl group or sulfonate. The chemically amplified photoresist resin comprises a cyclo olefin repeating unit having hydroxyalkyl group and repeating units selected from cyclo olefin repeating unit having carboxyl group and maleic anhydride repeating unit. The organic solvent is diethylene glycol diethyl ether, methyl 3-methoxypropionate, ethyl 3-ethoxypropionate, propylene glycol methyl ether acetate, ethyl lactate, cyclohexanone and/or 2-heptanone.Preferred Composition: The thermal acid generator is used in an amount of 0.1-5 weight% of photoresist resin, the photoacid generator is used in an amount of 0.1-10 weight% of photoresist resin, and the organic solvent is used in an amount of 100-2000 wt.% of the photoresist resin.Preferred Process: The photoresist film is exposed using a light source selected from extreme ultra violet, vacuum ultra violet, argon fluoride, krypton fluoride, E-beam, X-ray and ion beam. It is then heated at 150-250degreesC and the thermal acid generator releases an acid. SPECIFIC COMPOUNDS - Specific Resin: The photoresist resin is poly(tert-butylbicyclo(2.2.1)hept-5-ene-2-carboxylate/2-hydroxyethyl bicyclo(2.2.1)hept-5-ene-2-carboxylate/bicyclo(2.2.1)hept-5-ene- 2-carboxylic acid/maleic anhydride. Specific Generator: The photoacid generator is diphenyl iodide hexafluorophosphate, diphenyl iodide hexafluoroarsenate, diphenyl iodide hexafluoroantimonate, diphenyl p-methoxyphenyl triflate, diphenyl p-toluenyl triflate, diphenyl p-isobutylphenyl triflate, triphenyl sulfonium hexafluoroarsenate, triphenyl sulfonium hexafluoroantimonate, triphenylsulfonium triflate, dibutyl naphthylsulfonium triflate, phthalimidotrifluoromethane sulfonate, dinitrobenzyltosylate, n-decyl disulfone and/or naphthylimido trifluoromethane sulfonate. EXAMPLE - Poly(tert-butyl bicyclo(2.2.1)hept-5-ene-2- carboxylate/2-hydroxyethyl bicyclo(2.2.1)hept-5-ene-2- carboxylate/bicyclo(2.2.1)hept-5-ene- 2-carboxylic acid/maleic anhydride (in g) (1), triphenyl sulfonium triflate (0.012) and thermal acid generator of formula (II) (0.02) were added to propylene glycol methyl ether acetate solvent (7.2). The resultant mixture was filtered to obtain a photoresist composition. The photoresist composition was coated on a silicon wafer, baked at 110degreesC for 90 seconds and exposed to light using argon fluoride laser exposing device. The photoresist composition was post-baked at 110degreesC for 90 seconds and developed in 2.38 weight% of aqueous TMAH solution to obtain a 138 nm L/S pattern after measuring the critical dimension (CD) of the pattern using scanning electron microscope (SEM). The formed pattern was heated at 175degreesC for 60 seconds and the CD was measured using the SEM. At this time, no slimming occurred and 138 nm L/S pattern was maintained. DC A89 (Photographic, laboratory equipment, optical); E19 (Other organic compounds general - unknown structure, mixtures); G06 (Photosensitive compositions and bases, photographic processes); L03 (Electro-(in)organic, chemical features of electrical devices); P84 (Other photographic); U11 (Semiconductor Materials and Processes) MC A08-C01; A08-D01; A10-E05; A10-E10; A11-C02C; A12-E07C; A12-L02B2; E10-A09B2; E10-A09B7; G06-D01; G06-D03; G06-D06; G06-E04; G06-F03C; G06-G; G06-G17; G06-G18; L04-C06B1; U11-A06A; U11-C04A1B IP G03F-007/30; G03F-007/40; G03F-007/004; H01L-021/027; G03F-007/039; H01L-021/02 PD US2002081504-A1 27 Jun 2002 G03F-007/30 200317 Pages: 9 JP2002214804-A 31 Jul 2002 G03F-007/40 200317 Pages: 8 Japanese KR2002054120-A 06 Jul 2002 H01L-021/027 200317 US6787285-B2 07 Sep 2004 G03F-007/004 200459 English JP3837328-B2 25 Oct 2006 G03F-007/40 200670 Pages: 11 Japanese KR546098-B1 24 Jan 2006 H01L-021/02 200682 AD US2002081504-A1 US006633 05 Dec 2001 JP2002214804-A JP384658 18 Dec 2001 KR2002054120-A KR082823 27 Dec 2000 US6787285-B2 US006633 05 Dec 2001 JP3837328-B2 JP384658 18 Dec 2001 KR546098-B1 KR082823 27 Dec 2000 FD JP3837328-B2 Previous Publ. Patent JP2002214804 KR546098-B1 Previous Publ. Patent KR2002054120 PI KR082823 27 Dec 2000 US006633 05 Dec 2001 FS 430270.1; 430311; 430326; 430330; 430914; 430921; 430942; 430967; x CP US6787285-B2 JP2001109143 FUJI PHOTO FILM CO LTD (FUJF) JP2001188341 HYUNDAI ELECTRONICS IND CO LTD (HYNX) KIN K, JUNG J C US6132926-A HYUNDAI ELECTRONICS IND CO LTD (HYNX) JUNG J C, BOK C K, BAIK K H US6627384-B1 HYUNDAI ELECTRONICS IND CO LTD (HYNX) KIN K, JUNG J C JP3837328-B2 JP7140648-A JP11352702-A SUMITOMO CHEM CO LTD (SUMO) UETANI Y JP2001188341-A HYUNDAI ELECTRONICS IND CO LTD (HYNX) KIN K, JUNG J C JP2001356481-A SHIPLEY CO LLC (SHIL) ADAMS T G DN 411849-0-0-0-K U; 411850-0-0-0-K U; 469024-0-0-0-K U; 469025-0-0-0-K U; 790-0-0-0-; 131510-0-0-0-; 233-0-0-0- CI RA4DSW-K U; RA4DSX-K U; RA5KF4-K U; RA5KF5-K U; R00843-; R08574-; R00867- UT DIIDW:2003174013 ER PT P PN WO200293263-A1; US2002187419-A1; EP1388027-A1; US6737215-B2; KR2004029976-A; JP2004530159-W; CN1524201-A; TW242106-B1; CN100335972-C TI Photoresist composition for deep ultraviolet lithography comprises copolymer comprising at least one ethylenic unit containing at least one cyano functionality, and at least one cyclic unit. AU DAMMEL R R SAKAMURI R SAKAMURII R AE CLARIANT INT LTD (CLRN-C) CLARIANT FINANCE BVI LTD (CLRN-C) DAMMEL R R (DAMM-Individual) SAKAMURI R (SAKA-Individual) CLARIANT INT LTD (CLRN-C) CLARIANT FINANCE BVI LTD (CLRN-C) CLARIANT FINANCE BVI LTD (CLRN-C) CLARIANT FINANCE BVI LTD (CLRN-C) GA 2003148411 AB NOVELTY - A photoresist composition comprises a copolymer, a photoactive component, and a solvent. The copolymer comprises at least one ethylenic unit containing at least one cyano functionality, and at least one cyclic unit. USE - For deep ultraviolet lithography, and especially useful for imaging negative and positive patterns in the production of semiconductor devices. ADVANTAGE - The photoresist comprises a polymer that can be synthesized by free radical polymerization, and is transparent at wavelengths below 200 nm, especially 193 nm and 157 nm. It provides good lithographic performance when it is formulated into a photoresist. The copolymer is good dry etch resistance. DETAILED DESCRIPTION - A photoresist composition comprises a copolymer, a photoactive component, and a solvent. The copolymer comprises at least one ethylenic unit of structure (I) containing at least one cyano functionality, and at least one cyclic unit of structure (II): R1-R4 = H, alkyl, O-alkyl, alkyl ester, perfluoroalkyl ester, carboxylic acid, alkylcarbonyl, carboxylate, cyano, fluoroalkyl, acid or base labile group, alkylsulfonyl, sulfonate, sulfonamide, alkylsulfonamide; R', R'' = H, 1-6C alkyl, halogen, carboxylic acid, 1-10C alkylOCOalkyl, cyano(CN), 1-10C secondary or tertiary carboxylate, substituted pinacol; R'' = can link to form a cyclic non-aromatic structure, fluoroalkyl, W(CF3)2OH; W' = 1-6C alkyl or 1-6C alkyl ether or an acid or base labile group; R15 and R16 = H or 1-4C alkyl; m = 0-3 At least one of R1-R4 contains a cyano moiety. An INDEPENDENT CLAIM is included for a process of imaging a photoresist composition comprising: (1) coating a substrate with a film of photoresist composition; (2) baking the substrate to remove the solvent; imagewise irradiating the photoresist film; (3) baking the photoresist film; and (4) developing the irradiated photoresist film using an alkali developer. TF TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The acid labile group in the copolymer is tert-butoxycarbonyl, tert-pentyloxycarbonyl, isobornyloxycarbonyl, cyclohexyloxycarbonyl, 2-alkyl-2-admantyloxycarbonyl, tetrahydrofuranyloxycarbonyl, tetrahydropyranyloxycarbonyl, optionally substituted methoxymethoxycarbonyl, beta-carbonyloxy-beta-methyl-delta-valerolactone, beta-carbonyloxy-beta-methyl-gamma-butyrolactone, tert-butoxycarbonyloxy, tert-pentyloxycarbonyloxy, isobornyloxycarbonyloxy, cyclohexyloxycarbonyloxy, 2-alkyl-2-admantyloxycarbonyloxy, tetrahydrofuranyloxycarbonyloxy, tetrahydropyranyloxycarbonyloxy, optionally substituted methoxymethoxycarbonyloxy, beta-oxycarbonyloxy-beta-methyl-delta-valerolactone, beta-oxycarbonyloxy-beta-methyl-gamma-butyrolactone, tert-butoxy, tert-pentyloxy, isobornyloxy, cyclohexyloxy, 2-alkyl-2-admantyloxy, tetrahydrofuranyloxy, tetrahydropyranyloxy, optionally substituted methoxymethoxy, beta-oxy-beta-methyl-delta-valerolactone, or beta-oxy-beta-methyl-gamma-butyrolactone, and the acid labile group is connected directly to the polymer backbone or through a connecting group.The solvent is propylene glycol mono-alkyl ether, propylene glycol alkyl ether acetate, butyl acetate, xylene, ethylene glycol monoethyl ether acetate, propylene glycol mono-methyl ether acetate, 2-heptanone, ethyl lactate, ethyl-3-ethoxypropionate, and/or mixtures of ethyl lactate and ethyl-3-ethoxypropionate.The photoactive component is a photoacid generator, and/or photobase generator.The photoacid generator is diazonium salts, iodonium salts, sulfonium salts, sulfones, hydroxamic acid esters, halides or sulfonic esters.The base is triethylamine, triethanolamine, aniline, ethylenediamine, pyridine, triphenyliodonium hydroxide, dialkyliodonium hydroxide, or trialkylsulfonium hydroxide. The alkali developer comprises an aqueous solution of tetramethyl ammonium hydroxide. TECHNOLOGY FOCUS - POLYMERS - Preferred Polymers: In the copolymer, R7 and R8 are linked to form a lactone or anhydride. The ethylenic unit is derived from monomers consisting of formulae (a)-(e) and the cyclic unit is derived from monomers of formula (f)-(j):The copolymer further comprises additional comonomers consisting of (meth)acrylates, styrenes, hydroxystyrene, hydroxyhexafluoroisopropylstyrene, vinyl ethers, vinyl acetates, tetrafluoroethylene, maleic anhydride or itaconic anhydride and their fluorinated homologues. The photoresist further comprises a dissolution inhibitor. It further comprises a base. It further comprises a solvent or solvent mixture.Preferred Composition: The ethylenic unit is at least 40 mole% (preferably less than 80 mol.%). The additional monomer is less than 30 mole%.Preferred Properties: The weight average molecular weight of the copolymer is less than 200000 (preferably greater than 1000). The copolymer has an absorption coefficient at an exposure wavelength of less than 4/micron. TECHNOLOGY FOCUS - IMAGING AND COMMUNICATION - Preferred Process: The photoresist film is imagewise irradiated using light of wavelength of 100-300 nm. The heating step is at 90-15-degreesC for 30-180 seconds on a hot plate or from 15-40 minutes in an oven. EXAMPLE - Methyl 2-cyanoacrylate/t-butyl norbornene-carboxylate copolymer was dissolved in propylene glycol methyl ether acetate (PGMEA) to make 11.5% solution. To this solution, 5% of triphenylsulfonium nonafluorobutane sulfonate based on the weight of the copolymer was added. The resist composition was then spin coated over a silicon wafer which had been pretreated with hexamethylsilazane (HMDS) and coated with 39 nm thick bottom antireflective coating. The substrate was baked at 110degreesC for 90 seconds to obtain a 390 nm photoresist film. The film was then exposed with argon fluoride (ArF) excimer laser stepper (193 nm) using binary mask. The exposed film was baked at 150degreesC for 90 seconds on a hot plate and the pattern was developed using 0.265N tetramethylammonium hydroxide. 0.16 mum line-space patterns were resolved at a dose of 13 mJ/cm2. DC A89 (Photographic, laboratory equipment, optical); E19 (Other organic compounds general - unknown structure, mixtures); G06 (Photosensitive compositions and bases, photographic processes); L03 (Electro-(in)organic, chemical features of electrical devices); P84 (Other photographic); U11 (Semiconductor Materials and Processes) MC A12-L02E; E05-S; E07-D04C; E10-A01; E10-A09B8; E10-A10D; E10-A15A; E10-A16B; E10-A18B; E10-A22G; E10-B01E; E10-B03B2; E10-B04A2; E10-B04D2; E10-E04K; E10-G02H2; G06-F03C; L04-C05; L04-C06B; U11-A06A IP G03F-007/039; G03F-007/004; C08F-120/42; C08F-220/42; C08F-232/00; H01L-021/027 PD WO200293263-A1 21 Nov 2002 G03F-007/039 200314 Pages: 28 English US2002187419-A1 12 Dec 2002 G03F-007/004 200314 English EP1388027-A1 11 Feb 2004 G03F-007/039 200411 English US6737215-B2 18 May 2004 G03F-007/004 200433 English KR2004029976-A 08 Apr 2004 G03F-007/039 200453 JP2004530159-W 30 Sep 2004 G03F-007/039 200465 Pages: 47 Japanese CN1524201-A 25 Aug 2004 G03F-007/039 200477 Chinese TW242106-B1 21 Oct 2005 G03F-007/004 200681 Chinese CN100335972-C 05 Sep 2007 G03F-007/039 200828 Chinese AD WO200293263-A1 WOEP04558 25 Apr 2002 US2002187419-A1 US853732 11 May 2001 EP1388027-A1 EP737995 25 Apr 2002 US6737215-B2 US853732 11 May 2001 KR2004029976-A KR714580 10 Nov 2003 JP2004530159-W JP589881 25 Apr 2002 CN1524201-A CN809702 25 Apr 2002 TW242106-B1 TW105212 19 Mar 2002 CN100335972-C CN809702 25 Apr 2002 FD EP1388027-A1 PCT application Application WOEP04558 EP1388027-A1 Based on Patent WO200293263 JP2004530159-W PCT application Application WOEP04558 JP2004530159-W Based on Patent WO200293263 PI US853732 11 May 2001 DS WO200293263-A1: (National): CN; JP; KR; SG (Regional): AT; BE; CH; CY; DE; DK; ES; FI; FR; GB; GR; IE; IT; LU; MC; NL; PT; SE; TR EP1388027-A1: (Regional): AT; BE; CH; CY; DE; DK; ES; FI; FR; GB; GR; IE; IT; LI; LU; MC; NL; PT; SE; TR FS 430/270.1; 430/286.1; 430/320; 430/322; 430/326; 430/330; 430/905; 430/910; 524/565; 526/297; 526/341; 526/342 CP WO200293263-A1 EP930542-A1 SHIPLEY CO LLC (SHIL) TAYLOR G N, BARCLAY G G, SZMANDA C R EP1091249-A1 SHIPLEY CO LLC (SHIL) BARCLAY G G, MAO Z, KAVANAGH R J EP794458-A2 LUCENT TECHNOLOGIES INC (LUCE) HOULIHAN F M, REICHMANIS E, NALAMASU O, WALLOW T I EP982628-A2 SUMITOMO CHEM CO LTD (SUMO) FUJISHIMA H, UETANI Y, ARAKI K US6159655-A FUJI PHOTO FILM CO LTD (FUJF) SATO K WO2001037047-A2 US6737215-B2 EP930542-A1 SHIPLEY CO LLC (SHIL) TAYLOR G N, BARCLAY G G, SZMANDA C R EP1091249-A1 SHIPLEY CO LLC (SHIL) BARCLAY G G, MAO Z, KAVANAGH R J EP794458-A2 LUCENT TECHNOLOGIES INC (LUCE) HOULIHAN F M, REICHMANIS E, NALAMASU O, WALLOW T I EP982628-A2 SUMITOMO CHEM CO LTD (SUMO) FUJISHIMA H, UETANI Y, ARAKI K GB2320718-A HYUNDAI ELECTRONICS IND CO LTD (HYNX) JUNG J C, BOK C K, BAIK K H US4491628-A IBM CORP (IBMC) ITO H, WILLSON C G, FRECHET J M J US4812546-A US5350660-A WAKO PURE CHEM IND LTD (WAKP) URANO F, NAKAHATA M, OONO K US5399647-A US5843624-A LUCENT TECHNOLOGIES INC (LUCE) HOULIHAN F M, REICHMANIS E, NALAMASU O, WALLOW T I US6159655-A FUJI PHOTO FILM CO LTD (FUJF) SATO K US6165674-A SHIPLEY CO LLC (SHIL) TAYLOR G N, BARCLAY G G, SZMANDA C R US6509134-B2 ITO H (ITOH-Individual); MILLER D C (MILL-Individual); BROCK P J (BROC-Individual); WALLRAFF G M (WALL-Individual) ITO H, MILLER D C, BROCK P J, WALLRAFF G M WO2000017712-A1 WO2000067072-A1 WO2001037047-A2 CR US6737215-B2 PCTEP 0204558 Copy of PCT Search Report. DN 108639-0-0-0-U; 108639-0-1-0-U; 413-0-0-0-K M U; 642561-0-0-0-K M; 192-0-0-0-K M U; 642566-0-0-0-K M; 642567-0-0-0-K M; 374562-0-0-0-K M; 10-0-0-0-K M U; 133065-0-0-0-U; 517-0-4-0-U; 517-0-0-0-K M U; 44-0-0-0-K M U; 135368-0-0-0-U; 836-0-0-0-K M U; 76-0-0-0-K M U; 863-0-0-0-K M U; 110653-0-0-0-K M; 33537-0-0-0-K M; 134831-0-0-0-K M; 419320-0-0-0-K M; 131510-0-0-0- MN 008238801 K M; 008238803 K M; 008238802 K M; 008238804 K M CI R04571-K M; RA94OF-K M; R00426-K M; RA94OK-K M; RA94OL-K M; RA3M1G-K M; R00916-K M; R00819-K M; R00232-K M; R00743-K M; R14152-K M; R01013-K M; R01056-K M; RA00LR-K M; R14032-K M; R21444-K M; RA4JAP-K M; R08574- RG 0060-U; 0426-U; 0916-U; 0819-U; 0232-U; 0743-U; 1013-U; 1056-U UT DIIDW:2003148411 ER PT P PN EP1238969-A; EP1238969-A2 TI New sulfonium compound, used as photopolymerization initiator and acid generator for chemically amplified resist. AU OONO K FUKASAWA K SAKAMOTO K URANO F SUMINO M IMAZEKI S AE WAKO PURE CHEM IND LTD (WAKP-C) GA 2003142202 AB NOVELTY - Sulfonium compounds (I) are new. USE - As acid generator for resist composition, and photopolymerization initiator (all claimed). The resist composition is used in the high density integration of semiconductor elements. ADVANTAGE - The sulfonate salt compounds form a good pattern without being accompanied with drawback such as formation of fine particles during storage. When the compound is used as acid generator ultrafine pattern profile is obtained and the roughness of side walls is improved. DETAILED DESCRIPTION - Sulfonium compounds of formula (I) are new: X = phenyl group having substituent at ortho- and/or meta-position; m = 1-3; q = 0-2 provided that sum of m+q is 3; p = 1 or 2; and Zp- = anion derived from carboxylic acid. INDEPENDENT CLAIMS are also included for: (1) an acid generator comprising sulfonium compound; (2) a resist composition comprising polymer (A) and sulfonium compound. The polymer (A) contains protecting group which becomes soluble in alkali developing solution by an act of acid, as pending group; (3) a method for generating acid which involves irradiating the sulfonium compound with light; (4) a method for formation of pattern which involves coating the resist composition on a substrate, heating, irradiating light having wavelength of 220 nm or less on the substrate through a mask and developing using the developing solution after heat treatment if necessary; (5) cationic type photopolymerization initiator comprising sulfonium compound; and (6) a method for polymerization of alpha, beta-ethylenically unsaturated monomer which involves using polymerization initiator. TF TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Acid: The carboxylic acid is a compound having formula (II) or (III):R5-COOH (II)HOOC-R6-COOH (III)R5 = H or (un)substituted monovalent hydrocarbon, preferably 1-20C alkyl, more preferably phenyl or naphthyl; andR6 = direct-linkage or (un)substituted divalent hydrocarbon residue, preferably 1-10C alkylene or 2-10C alkenylene, more preferably phenylene or naphthylene.Preferred Substituent: The substituent in the phenyl group shown by X is represented by formulae (IV)-(VII), preferably 1-6C alkyl or 1-6C alkoxy.-R7 (IV)-O-R8 (V)-S-R9 (VI)R7-R9 = halo, (un)substituted alkyl, (un)substituted aryl or (un)substituted aralkyl; andR10, R11 = R7 or acyl.R10 and R11 may form a hetero ring together with nitrogen atom to which they are bound.The substituent in the monovalent and divalent hydrocarbon residues is a halogen atom, lower alkyl, lower haloalkyl or nitro group.Preferred Compounds: The acid generator further comprises a diazo disulfo compound. Alternately the resist composition comprises polymer of formula (IX) soluble in alkaline developing solution, sulfonium compound and dissolving-inhibiting agent of formulae (X)-(XII) containing a protecting group which become soluble in alkaline developing solution by acid, or polymer (IX), sulfonium compound and cross-linking agent of formula (XIII) or (XIV) which cross-links the polymer to make it insoluble in alkaline developing solution by treatment under heating in presence of acid.Polymer (A) is represented by formula (VIII):R11-R14 = H or methyl;R15 = H or lower alkyl;R16 = lower alkyl;R17 = alkyl or aralkyl;R18 = H, lower alkyl, lower alkoxy, tetrahydropyranyloxy, tetrahydrofuranyloxy, tert-butoxycarbonyloxy, tert-amyloxycarbonyloxy, benzoyloxy, acetyloxy, pivaloyloxy or tert-butoxycarbonylmethyloxy;R19 = H or cyano;R20 = cyano or carboxyl group which may be esterified;r,r',e,e',g,g' = 0 or natural number;t, t' = natural number, providing that 0 at most r/r+t+e+g at most 0.5, 0 at most e/r+t+e+g at most 0.3, 0 at most g/r+t+e+g at most 0.3 and 0.2 less than r+e+g/r+t+e+g at most 0.8, 0 at most r'/r'+t'+e'+g' at most 0.2, 0 at most e'/r'+t'+e'+g' at most 0.2, 0 at most g'/r'+t'+e'+g' at most 0.2 and 0 at most r'+e'+g'/r'+t'+e'+g' at most 0.2;R21 = acid labile group;R22, R21 = H or methyl;R23 = H or lower alkyl; andR24 = H or lower alkoxymethyl.R15 and R16 may form an alicyclic ring together with a carbon atom to which they are bound.Preferred Process: Polymerization of monomer is conducted under light irradiation. The light is a deep ultraviolet, krypton fluoride excimer laser, i-line, argon fluoride excimer laser, fluorine laser, electron beams or soft X-rays. SPECIFIC COMPOUNDS - The sulfonium compound is diphenyl-2,4,6-trimethylphenylsulfonium 1-perfluorooctanoate or diphenyl-2,4,6-trimethylphenylsulfonium p-trifluoromethylbenzoate. EXAMPLE - Diphenyl sulfoxide (in g) was added to mesitylene (500 ml) and aluminum bromide (340). The reaction was carried out at 90 degrees C for 12 hours and mixture of concentrated hydrobromic acid solution (100 ml) and ice water (500 ml) was added. The organic layer was washed with water and dried over anhydrous magnesium sulfate followed by filtration and solvent removal, and diphenyl-2,4,6-trimethylphenylsulfonium bromide (DTPSB) (58) was obtained. Methylene chloride (40 ml) was dissolved in (DTPSB) (4.2) and cooled to 5 degrees C. Silver 4-trifluoromethylbenzoate (3.7) was added and the reaction took place with stirring for 8 hours. Silver bromide was precipitated, filtered, washed with water, and diphenyl-2,4,6-trimethylphenylsulfonium p-trifluoromethyl benzoate (DTSTB) (3.6) was obtained as white crystal. Mixed solution comprising poly(p-ethoxyethoxystyrene/p-pivaloyloxyoxystyrene/p-hydroxystyrene) (6), bis(cyclohexylsulfonyl)diazomethane (0.2), (DTSTB) (0.1), dicyclohexylmethylamine (0.1), fluorine-containing nonionic surfactant (0.1) and propyleneglycol monomethyl ether acetate (29) was filtered and chemically amplified resist composition was obtained. The number of fine particles on the resist composition after 0 day, 3 days, 1 week and 2 weeks, 1, 2 and 3 months and 6 months was below 10, 15 and 20, respectively. Further pattern was formed using the composition solution. The pattern was of rectangular shape and showed a definition of 0.16 mum line and space under exposure dose of 40 mJ/cm2. In case of defocus exposure definition was +/-0.4 mum under 0.2 mum line and space. No change of pattern was observed even after 2 hours under 0.18 mum line and space and thus high storage stability was confirmed. DC A89 (Photographic, laboratory equipment, optical); E14 (Aromatics); E13 (Heterocyclics); G06 (Photosensitive compositions and bases, photographic processes); L03 (Electro-(in)organic, chemical features of electrical devices); P84 (Other photographic); U11 (Semiconductor Materials and Processes) MC A04-C; A04-C01; A08-M08; A12-E07C; A12-L02B2; E06-A02C; E06-A02D; E07-D13B; E10-A01; E10-A16B; E10-C04; E10-H01D; E10-H01E; E10-J02B; E11-P; G06-D06; G06-F03C; G06-F03D; L04-C06B; U11-A06A IP C07C-381/12; G03F-007/004 PD EP1238969-A EP1238969-A2 11 Sep 2002 C07C-381/12 200314 Pages: 37 English AD EP1238969-A2 EP011806 15 Dec 2000 FD EP1238969-A2 Div ex Patent EP1113005 EP1238969-A2 Div ex Application EP127570 PI JP370655 27 Dec 1999 JP105789 07 Apr 2000 JP315061 16 Oct 2000 DS EP1238969-A2: (Regional): AT; BE; CH; CY; DE; DK; ES; FI; FR; GB; GR; IE; IT; LI; LU; MC; NL; PT; SE; TR FS x CP EP1238969-A DE2541709-A EP898201-A JSR CORP (JAPS) KOBAYASHI E, SHIMIZU M, TANABE T, IWANAGA S JP5255240-A JP8334893-A US5847218-A EP1238969-A2 DE2541709-C EP898201-B1 JSR CORP (JAPS) KOBAYASHI E, SHIMIZU M, TANABE T, IWANAGA S US5847218-A CR EP1238969-A DATABASE CHEMABS [Online] CHEMICAL ABSTRACTS SERVICE, COLUMBUS, OHIO, US; STN, CAPLUS accession no. 1994:232097, XP002162402 -& CHEMICAL ABSTRACTS, vol. 120, no. 18, 2 May 1994 (1994-05-02) Columbus, Ohio, US; abstract no. 232097, XP002162401 & JP 05 255240 A (NIPPON ELECTRIC CO) DATABASE CHEMABS [Online] CHEMICAL ABSTRACTS SERVICE, COLUMBUS, OHIO, US; STN, CAPLUS accession no. 1997:178245, XP002162403 -& CHEMICAL ABSTRACTS, vol. 126, no. 13, 25 March 1997 (1997-03-25) Columbus, Ohio, US; abstract no. 179061, XP002162464 & JP 08 334893 A (JAPAN SYNTHETIC RUBBER CO LTD) EP1238969-A2 DATABASE CHEMABS [Online] CHEMICAL ABSTRACTS SERVICE, COLUMBUS, OHIO, US; STN, CAPLUS accession no. 1994:232097, XP002162402 -& CHEMICAL ABSTRACTS, vol. 120, no. 18, 2 May 1994 (1994-05-02) Columbus, Ohio, US; abstract no. 232097, XP002162401 & JP 05 255240 A (NIPPON ELECTRIC CO) DATABASE CHEMABS [Online] CHEMICAL ABSTRACTS SERVICE, COLUMBUS, OHIO, US; STN, CAPLUS accession no. 1997:178245, XP002162403 -& CHEMICAL ABSTRACTS, vol. 126, no. 13, 25 March 1997 (1997-03-25) Columbus, Ohio, US; abstract no. 179061, XP002162464 & JP 08 334893 A (JAPAN SYNTHETIC RUBBER CO LTD) DN 659287-0-0-0-K M; 659289-0-0-0-K M MN 008479601 K M; 008479602 K M; 008479603 K M; 008479604 K M; 008479605 K M; 008479606 K M; 008479607 K M; 008479608 K M RI 00212 CI RA9GFT-K M; RA9GFV-K M UT DIIDW:2003142202 ER PT P PN GB2372334-A; DE10206378-A1; JP2002328475-A; KR2002070797-A; US2002155378-A1; GB2372334-B; TW573227-A TI Chemical amplifying type positive resist composition used in fine processing of semiconductor, comprises resin which comprises polymerization unit derived from unsaturated monomer. AU UETANI Y FUJISHIMA H ARAKI K KAMIYA Y AE SUMITOMO CHEM CO LTD (SUMO-C) SUMITOMO CHEM CO LTD (SUMO-C) UETANI Y (UETA-Individual) FUJISHIMA H (FUJI-Individual) ARAKI K (ARAK-Individual) GA 2003122974 AB NOVELTY - A chemical amplifying type positive resist composition comprises a resin which comprises a polymerization unit derived from an unsaturated monomer (1), and which is insoluble in an alkali but becomes alkaline-soluble due to action of an acid, and an acid generating agent. USE - Used in the fine processing of a semiconductor. ADVANTAGE - The resist composition comprising resin containing polymerization unit made of unsaturated monomer, exhibits well-balanced properties such as resolution, profile, sensitivity, adhesivity, and undergoes a minimum of size shrinkage when being observed by scanning-type electron microscope. The composition is suitable for exposure with krypton fluoride excimer laser or argon fluoride excimer laser. The resist provides a resist pattern with high performance and ensures size measurement with high accuracy. DETAILED DESCRIPTION - A chemical amplifying type positive resist composition comprises a resin which comprises a polymerization unit derived from an unsaturated monomer (1), and which is insoluble in an alkali but becomes alkaline-soluble due to action of an acid, and an acid generating agent. R1 and R2 = hydrogen or methyl. TF TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The positive resist composition comprises 80-99.9 weight% (wt.%) of the resin, and 0.1-20 wt.% of the acid generating agent, and also comprises 0.001-1 weight part (wt.pt) of a basic compound as a quencher to 100 wt.pts of the resin.Preferred Resin: The resin comprises 5-50 mol% of polymerization unit derived from monomer (1), and also comprises a polymerization unit having a group cleavable by the action of an acid derived from 2-alkyl-2-adamantyl (meth)acrylate, preferably 2-ethyl-2-adamantyl (meth)acrylate EXAMPLE - 2-ethyl-2-adamantyl-methacrylate, 3-hydroxy-1-adamantyl acrylate, 2-norbornene and 2(5H)furanone were mixed at a ratio of 2:2:3:3, and 2-ethylhexyl 3-mercapto propionate equivalent to 3 mol% of all the monomers was added. Then, methyl isobutyl ketone, equivalent to two times of all the monomers was added so as to obtain a solution. Furthermore, azobisisobutyronitrile, equivalent to 1 mol% of all the monomers was added as an initiator, followed by heating at 80degreesC and stirring for 15 hours. After the reaction mixture was cooled, precipitation was performed with excessive amount of methanol, and a copolymer (P) having a weight average molecular weight of 6000 was obtained. The copolymer (P) (in weight parts) (10), p-tolyldiphenyl sulfonium perfluorooctane sulfonate as acid generating agent (0.2), 2,6-diisopropyl aniline (0.0075), propylene glycol monomethyl ether acetate (9), gamma-butyrolactone (3) and 2-heptanone (48) as solvents, were mixed and dissolved, and filtered to prepare a resin solution. An organic anti-reflective coating composition was coated on a silicon wafer, and baked at 215degreesC for 60 seconds, so that 780 Angstrom thick organic anti-reflective coating was formed. The resist solution was applied by spin coating to a thickness of 0.39 microns, and prebaked at 120degreesC for 60 seconds on a direct hot plate. The wafer on which the resist film was formed, was exposed using argon fluoride excimer, so that a line-and-space pattern was formed. After exposure, post exposure baking was performed on a hot plate at 120degreesC for 60 seconds, followed by paddle development for 60 seconds using 2.38 weight% aqueous solution of tetramethylammonium hydroxide. The line-and-space pattern on the organic anti-reflective film substrate after development was observed with scanning-type electron microscope (SEM), and effective sensitivity, resolution and variation in sizes are measured. The resist had effective sensitivity of 12 mJ/cm2, resolution of 0.15 microns and shrinkage of 0.006 microns. The resist had sensitivity and resolution that were excellently balanced, and underwent smaller shrinkage due to irradiation with electron beams of SEM. DC A89 (Photographic, laboratory equipment, optical); A14 (Other substituted mono-olefins, PVC, PTFE); G06 (Photosensitive compositions and bases, photographic processes); L03 (Electro-(in)organic, chemical features of electrical devices); P84 (Other photographic); U11 (Semiconductor Materials and Processes) MC A04-F01A; A12-L02D; G06-D04; L04-C05; U11-A06A IP G03F-007/039; H01L-021/027; C08F-220/16; C08F-246/00; C08F-234:02 PD GB2372334-A 21 Aug 2002 G03F-007/039 200312 Pages: 25 English DE10206378-A1 10 Oct 2002 G03F-007/039 200312 German JP2002328475-A 15 Nov 2002 G03F-007/039 200312 Pages: 7 Japanese KR2002070797-A 11 Sep 2002 G03F-007/039 200312 US2002155378-A1 24 Oct 2002 G03F-007/039 200312 English GB2372334-B 09 Apr 2003 G03F-007/039 200325 English TW573227-A 21 Jan 2004 G03F-007/039 200453 Chinese AD GB2372334-A GB003649 15 Feb 2002 DE10206378-A1 DE1006378 15 Feb 2002 JP2002328475-A JP036395 14 Feb 2002 KR2002070797-A KR008283 16 Feb 2002 US2002155378-A1 US075342 15 Feb 2002 TW573227-A TW102327 08 Feb 2002 PI JP041389 19 Feb 2001 DN 55505-0-0-0-; 192-0-0-0-; 786-0-0-0- CI R01289-; R00426-; R00836- UT DIIDW:2003122974 ER PT P PN JP2002329655-A; US2003039029-A1; US6666560-B2 TI Reflection-type reduction projection optical system for extreme UV lithography system, has concave and convex mirrors arranged in predetermined manner to maintain specific distance between wafer point and wafer image point. AU SUZUKI M AE CANON KK (CANO-C) SUZUKI M (SUZU-Individual) CANON KK (CANO-C) GA 2003116114 AB NOVELTY - The concave mirrors (M1,M3,M5) and the convex mirrors (M2,M4) are arranged from the wafer to the wafer image in a predetermined order, such that the distance of 400-1500 mm is maintained between the wafer point and the wafer image point. USE - For extreme ultraviolet lithographic system or excimer laser lithography system for pattern formation on single crystal in manufacture of semiconductor device e.g. integrated circuit (IC), LSI and glass substrate for liquid crystal display (LCD). ADVANTAGE - Prevents interference of mask stage and wafer stage, thus high definition device with sufficient exposure properties such as throughput is realized. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) Exposure apparatus; and (2) Manufacturing method of device such as semiconductor device, LCD. DESCRIPTION OF DRAWING(S) - The figure shows an outline sectional view of the reflection-type reduction projection optical system. Concave mirrors (M1,M3,M5) Convex mirrors (M2,M4) DC P84 (Other photographic); U11 (Semiconductor Materials and Processes); P82 (Photographic apparatus); P81 (Optics) MC U11-C04D; U11-C04E1 IP H01L-021/027; G03F-007/22; G03B-021/28; G02B-005/10 PD JP2002329655-A 15 Nov 2002 H01L-021/027 200311 Pages: 11 Japanese US2003039029-A1 27 Feb 2003 G03B-021/28 200318 English US6666560-B2 23 Dec 2003 G02B-005/10 200408 English AD JP2002329655-A JP133809 01 May 2001 US2003039029-A1 US136722 30 Apr 2002 US6666560-B2 US136722 30 Apr 2002 PI JP133809 01 May 2001 CP US6666560-B2 US6353470-B1 ZEISS FA CARL (ZEIS) DINGER U US6361176-B1 NIKON CORP (NIKR) MAJIMA K JP2000098228-A NIKON CORP (NIKR) TAKAHASHI Y JP2000100694-A NIKON CORP (NIKR) TAKAHASHI Y US6072852-A UNIV CALIFORNIA (REGC) HUDYMA R M US6172852-B1 US6213610-B1 NIKON CORP (NIKR) SUENAGA Y UT DIIDW:2003116114 ER PT P PN US2002113035-A1; JP2002244296-A TI Formation of hole pattern uses photosensitive material containing hardly alkaline-soluble base polymer, and acid generator including onium salt compound. AU SHIMOMURA K KATSUYAMA A AE SHIMOMURA K (SHIM-Individual) KATSUYAMA A (KATS-Individual) MATSUSHITA DENKI SANGYO KK (MATU-C) GA 2003090190 AB NOVELTY - A hole pattern is formed by applying, on an etch target film, a photosensitive material containing a hardly alkaline-soluble base polymer including a polymer in which a principal chain has cycloolefin and a (non-)saturated polycyclic alkyl group is bonded to the principal chain, and an acid generator including an onium salt compound. USE - For forming a hole pattern useful in semiconductor patterning. ADVANTAGE - Since, the base polymer has high stability against heat and plasma, the wall of the hole formed in the photosensitive material film is difficult to scrape even when plasma etching is carried out by using plasma at a high density of at least1x10 power 10/cm3. Accordingly, a hole having a high aspect ratio and a good plane shape with a hole size not largely enlarged as compared with a desired value can be formed in the etch target film. Also, since the acid generator includes an onium salt compound, the resistance of the photosensitive material film against the plasma etching can be further improved. A metal film filled in the hole of the etch target film is not connected to an interconnect that should not be electrically connected to the metal film, and hence, the problem of an abnormal leakage current or degradation of the device characteristics can be prevented. DETAILED DESCRIPTION - Formation of hole (11a, 12a) pattern involves forming a photosensitive material film (12) by applying, on an etch target film (11) deposited on a semiconductor substrate (10), a photosensitive material containing a hardly alkaline-soluble base polymer including a polymer in which a principal chain has cycloolefin and a (non-)saturated polycyclic alkyl group is bonded to the principal chain, and an acid generator including an onium salt compound. A hole-patterned photosensitive material film is formed by irradiating the photosensitive material film with argon-fluoride excimer laser through a photomask. A hole pattern in the etch target film is formed by subjecting the etch target film to plasma etching using plasma at a density of at least1x10 power 10/cm3 with the hole-patterned photosensitive material film used as an etching mask. DESCRIPTION OF DRAWING(S) - The figures are diagrams for showing procedures of the inventive method for forming a hole pattern. Substrate (10) Etch target film (11) Hole (11a, 12a) Photosensitive material film (12) TF TECHNOLOGY FOCUS - ELECTRONICS - Preferred Method: The plasma etching is carried out by using a first voltage for generating plasma and a second voltage for inducing ions of the plasma toward the substrate. TECHNOLOGY FOCUS - POLYMERS - Preferred Component: The polymer includes norbornene and norbornene derivative. It also includes tricyclodecene derivative, tetracyclododecene derivative, pentacyclopentadecene derivative or hexacycloheptadecene derivative. The polycylic alkyl is adamantyl, tricyclodecyl, or tetracyclododecyl. DC A85 (Electrical applications); G06 (Photosensitive compositions and bases, photographic processes); L03 (Electro-(in)organic, chemical features of electrical devices); U11 (Semiconductor Materials and Processes) MC A08-M08; A10-E05; A11-B05; A12-E01; A12-L02B2; G06-D06; G06-E02; G06-E04; G06-F03C; G06-F03D; G06-G; G06-G17; G06-G18; L04-C05; L04-C07D; U11-A06A; U11-C05D3 IP C23F-001/00; C08K-005/00; C08L-101/02; G03F-007/039; G03F-007/40; H01L-021/027 PD US2002113035-A1 22 Aug 2002 C23F-001/00 200308 Pages: 15 JP2002244296-A 30 Aug 2002 G03F-007/039 200308 Pages: 10 AD US2002113035-A1 US011726 11 Dec 2001 JP2002244296-A JP042096 19 Feb 2001 PI JP042096 19 Feb 2001 DN 55505-0-0-0- CI R01289- UT DIIDW:2003090190 ER PT P PN US2002089654-A1; JP2002151389-A; US6795167-B2; JP3619141-B2 TI Projection exposure apparatus for projection exposure in photolithographic process, comprises illuminating optical system, projection optical system, and adjusting mechanism. AU OTA M SANO N AE OTA M (OTAM-Individual) SANO N (SANO-Individual) CANON KK (CANO-C) CANON KK (CANO-C) GA 2003038802 AB NOVELTY - A projection exposure apparatus comprises: (a) an illuminating optical system for illuminating a pattern of a reticle with a laser light from a continuous emission excimer laser; (b) a projection optical system for projecting the illuminated pattern onto a substrate; and (c) an adjusting mechanism for adjusting an optical characteristic of the projection optical system. USE - Used in a projection exposure step in a photolithographic process, for the manufacture of semiconductor devices, i.e. integrated circuits or large scale integrated circuits, image pick-up devices, display devices, and magnetic head devices. ADVANTAGE - The exposure apparatus allows very accurate projection of a pattern of reticle on a substrate, even when a continuous emission excimer laser is used as a light source and even when a monochromatic lens is used as a projection optical system. DETAILED DESCRIPTION - A projection exposure apparatus comprises: (a) an illuminating optical system for illuminating a pattern of a reticle with a laser light from a continuous emission excimer laser; (b) a projection optical system for projecting the illuminated pattern onto a substrate; and (c) an adjusting mechanism for adjusting an optical characteristic of the projection optical system (3) in accordance with a change in wavelength of the laser light. An INDEPENDENT CLAIM is included for the production of a device comprising exposing a substrate with a pattern using a projection exposure apparatus; and developing the exposed substrate. DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of a main portion of a projection exposure apparatus. Projection optical system (3) TF TECHNOLOGY FOCUS - IMAGING AND COMMUNICATION - Preferred Condition: The apparatus is adapted to form an image having a linewidth of 0.13, preferably 0.09 microns. TECHNOLOGY FOCUS - INSTRUMENTATION AND TESTING - Preferred Condition: A half bandwidth of a wavelength spectrum of the laser light is at most 0.1, preferably at most 0.08 pm.Preferred Component: The excimer laser is an argon fluoride excimer laser, or a fluoride (F2) excimer laser. The lens system of the laser comprises at least 10 lens elements. TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Material: The glass material is silicon oxide, calcium fluoride, barium fluoride or magnesium fluoride. The first lens or the first two lenses of the lens system, from the substrate, are made of calcium fluoride, barium fluoride or magnesium fluoride. DC L03 (Electro-(in)organic, chemical features of electrical devices); P82 (Photographic apparatus); U11 (Semiconductor Materials and Processes); V08 (Lasers and Masers); P81 (Optics); P84 (Other photographic) MC L04-D; U11-C04E; V08-A04B IP G03B-027/54; H01L-021/027; G02B-013/18; G02B-013/22; G02B-013/24; G02B-019/00; G03F-007/20; H01S-003/00; H01S-003/139; G03B-027/42; G03B-027/52; G03B-027/68 PD US2002089654-A1 11 Jul 2002 G03B-027/54 200303 Pages: 20 English JP2002151389-A 24 May 2002 H01L-021/027 200303 Pages: 16 Japanese US6795167-B2 21 Sep 2004 G03B-027/54 200462 English JP3619141-B2 09 Feb 2005 H01L-021/027 200511 Pages: 16 Japanese AD US2002089654-A1 US986303 08 Nov 2001 JP2002151389-A JP344474 10 Nov 2000 US6795167-B2 US986303 08 Nov 2001 JP3619141-B2 JP344474 10 Nov 2000 FD JP3619141-B2 Previous Publ. Patent JP2002151389 PI JP344474 10 Nov 2000 US986303 08 Nov 2001 FS 355/52; 355/53; 355/55; 355/63; 355/67; 355/69 CP US6795167-B2 EP997225-A1 EP820132-A2 CANON KK (CANO); OHMI T (OHMI-Individual) OHMI T, TANAKA N, HIRAYAMA M EP1026796-A2 OHMI T (OHMI-Individual); CANON KK (CANO) OHMI T, SUZUKI N, TANAKA N, HIRAYAMA M, OHSAWA H, SHINOHARA T EP1032097-A2 EP1032098-A2 EP1039595-A2 JP09199403-A JP10163547-A CANON KK (CANO); OHMI T (OHMI-Individual) OHMI T, TANAKA N, HIRAYAMA M US4773750-A US4811055-A US4891663-A CANON KK (CANO) HIROSE R US4922290-A US5095190-A CANON KK (CANO) US5170207-A OLYMPUS OPTICAL CO LTD (OLYU) TEZUKA Y, KUBA K US5838426-A US5920398-A CANON KK (CANO) IWANAGA T, YAMADA Y, UZAWA S US6442181-B1 CYMER INC (CYME) NEWMAN P C, DUFFEY T P, PARTLO W N, SANDSTROM R L, MECHER P C, JOHNS D M, SAETHRE R B, FLEUROV V B, NESS R M, RETTIG C L, SHANNON R A, UJAZDOWSKI R C, ROKNI S, PAN X J, KULGEYKO V, SMITH S T, ANDERSON S L, ALGOTS J M, SPANGLER R L, FOMENKOV I V JP3619141-B2 JP01010624-A JP01094617-A JP01181520-A JP05034593-A JP07005365-A JP07128590-A JP07142385-A JP08203812-A JP09179024-A JP10163547-A CANON KK (CANO); OHMI T (OHMI-Individual) OHMI T, TANAKA N, HIRAYAMA M JP10163553-A CANON KK (CANO); OHMI T (OHMI-Individual) OHMI T, TANAKA N, HIRAYAMA M JP11354862-A JP2000195772-A NIKON CORP (NIKR) TAKAHASHI T, TSUKAMOTO H JP2000235146-A ZEISS FA CARL (ZEIS) SCHUSTER K UT DIIDW:2003038802 ER PT P PN US2002122451-A1; WO200271556-A2; EP1368868-A2; AU2002258594-A1; TW569509-A; JP2004523914-W; US6839374-B2; AU2002258594-A8; WO200271556-A3 TI High repetition rate excimer laser beam production for e.g. semiconductor manufacture, involves controlling oscillating laser beam to predetermined narrow width and passing through front barium fluoride window of chamber. AU SPARROW R W AE SPARROW R W (SPAR-Individual) CORNING INC (CORG-C) CORNING INC (CORG-C) CORNING INC (CORG-C) CORNING INC (CORG-C) GA 2002706733 AB NOVELTY - A laser beam (11) which oscillates by the supply of energy to the laser gas sealed in a laser chamber (17) passes through a rear barium fluoride crystal window (16) of the chamber. The laser beam is controlled to a predetermined narrow width and passed through a front barium fluoride crystal window (18) of the chamber, to produce an excimer laser beam of repetition rate more than 4 KHz. USE - For producing a high repetition rate narrow width excimer laser beam used for semiconductor manufacture and for commercial purposes. ADVANTAGE - The durability of the excimer laser having an output of greater than or equal to 10 mJ and a repetition rate of greater than or equal to 4 KHz is maintained, making the laser windows with barium fluoride which has no perceptible induced absorption. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for an excimer laser. DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of the excimer laser. Laser beam (11) Barium fluoride crystal window (16) Laser chamber (17) TF TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Source: The laser beam source is an argon fluoride or krypton fluoride. DC L03 (Electro-(in)organic, chemical features of electrical devices); U11 (Semiconductor Materials and Processes); V08 (Lasers and Masers) MC L03-F02; U11-C04C2; U11-C04E1; V08-A04B IP H01S-003/22; H01S-003/223; H01S-000/00; H01S-003/225; H01S-003/034; H01S-003/08; H01S-003/18; H01S-003/02 PD US2002122451-A1 05 Sep 2002 H01S-003/22 200276 Pages: 7 English WO200271556-A2 12 Sep 2002 H01S-000/00 200276 English EP1368868-A2 10 Dec 2003 H01S-003/225 200382 English AU2002258594-A1 19 Sep 2002 H01S-003/08 200433 English TW569509-A 01 Jan 2004 H01S-003/18 200441 Chinese JP2004523914-W 05 Aug 2004 H01S-003/02 200451 Pages: 23 Japanese US6839374-B2 04 Jan 2005 H01S-003/22 200503 English WO200271556-A3 13 Feb 2003 H01S-003/08 201206 English AD US2002122451-A1 US087484 01 Mar 2002 WO200271556-A2 WOUS09047 25 Feb 2002 EP1368868-A2 EP728550 25 Feb 2002 AU2002258594-A1 AU258594 25 Feb 2002 TW569509-A TW104776 11 Mar 2002 JP2004523914-W JP570359 25 Feb 2002 US6839374-B2 US087484 01 Mar 2002 AU2002258594-A8 AU258594 25 Feb 2002 WO200271556-A3 WOUS09047 25 Feb 2002 FD US2002122451-A1 Provisional Application US273028P EP1368868-A2 PCT application Application WOUS09047 EP1368868-A2 Based on Patent WO200271556 AU2002258594-A1 Based on Patent WO200271556 JP2004523914-W PCT application Application WOUS09047 JP2004523914-W Based on Patent WO200271556 AU2002258594-A8 Based on Patent WO200271556 PI US273028P 02 Mar 2001 US087484 01 Mar 2002 DS WO200271556-A2: (National): AE; AG; AL; AM; AT; AU; AZ; BA; BB; BG; BR; BY; BZ; CA; CH; CN; CO; CR; CU; CZ; DE; DK; DM; DZ; EC; EE; ES; FI; GB; GD; GE; GH; GM; HR; HU; ID; IL; IN; IS; JP; KE; KG; KP; KR; KZ; LC; LK; LR; LS; LT; LU; LV; MA; MD; MG; MK; MN; MW; MX; MZ; NO; NZ; OM; PH; PL; PT; RO; RU; SD; SE; SG; SI; SK; SL; TJ; TM; TN; TR; TT; TZ; UA; UG; UZ; VN; YU; ZA; ZM; ZW (Regional): AT; BE; CH; CY; DE; DK; ES; FI; FR; GB; GR; IE; IT; LU; MC; NL; PT; SE; TR EP1368868-A2: (Regional): AL; AT; BE; CH; CY; DE; DK; ES; FI; FR; GB; GR; IE; IT; LI; LT; LU; LV; MC; MK; NL; PT; RO; SE; SI; TR WO200271556-A3: (National): AE; AG; AL; AM; AT; AU; AZ; BA; BB; BG; BR; BY; BZ; CA; CH; CN; CO; CR; CU; CZ; DE; DK; DM; DZ; EC; EE; ES; FI; GB; GD; GE; GH; GM; HR; HU; ID; IL; IN; IS; JP; KE; KG; KP; KR; KZ; LC; LK; LR; LS; LT; LU; LV; MA; MD; MG; MK; MN; MW; MX; MZ; NO; NZ; OM; PH; PL; PT; RO; RU; SD; SE; SG; SI; SK; SL; TJ; TM; TN; TR; TT; TZ; UA; UG; UZ; VN; YU; ZA; ZM; ZW (Regional): AT; BE; CH; CY; DE; DK; ES; FI; FR; GB; GR; IE; IT; LU; MC; NL; PT; SE; TR FS 372/101; 372/102; 372/20; 372/29.011; 372/32; 372/55; 372/57; 372/58; 372/60; 372/98; 372/99 CP WO200271556-A2 US6242136-B1 US6345065-B1 US6421365-B1 EP1368868-A2 EP972863-A1 US4817096-A US6839374-B2 JP06250015-A JP09040499-A JP11288898-A RU2041298-C1 US5978409-A CYMER INC (CYME) DAS P P, ERSHOV A I, MORTON R G US6146456-A US20010043331-A1 US20020044586-A1 US6242136-B1 US6345065-B1 US6421365-B1 CR WO200271556-A2 See also references of EP 1368868A2 See also references of EP 1368868A2 EP1368868-A2 KITTLEMANN O ET AL: "Two-photon absorption in ultraviolet window materials at 193 nm" CLEO '94. SUMMARIES OF PAPERS PRESENTED AT THE CONFERENCE ON LASERS AND ELECTRO-OPTICS. VOL.8. 1994 TECHNICAL DIGEST SERIES. CONFERENCE EDITION (CAT. NO.94CH3463-7) OPT. SOC. AMERICA WASHINGTON, DC, USA, 8 May 1994 (1994-05-08), page 334, XP009040199 ISBN: 0-7803-1971-0 MANN K ET AL: "Characterization of absorption and degradation on optical components for high power excimer lasers" PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING SPIE-INT. SOC. OPT. ENG USA, vol. 2714, 30 October 1995 (1995-10-30), pages 2-11, XP002306434 ISSN: 0277-786X REITEROV V M ET AL: "Effect of heat treatment on surface microstructure and spectral transmission of single-crystal magnesium fluoride windows" SOVIET JOURNAL OF OPTICAL TECHNOLOGY USA, vol. 57, no. 3, March 1990 (1990-03), pages 171-174, XP009040017 ISSN: 0038-5514 KETTERLE W ET AL: "TWO-WAVELENGTH OPERATION OF A TUNABLE KRF EXCIMER LASER - A PROMISING TECHNIQUE FOR COMBUSTION DIAGNOSTICS" APPLIED PHYSICS B. PHOTOPHYSICS AND CHEMISTRY, SPRINGER VERLAG. HEIDELBERG, DE, vol. B51, no. 2, 1 August 1990 (1990-08-01), pages 91-93, XP000143162 KERR N C ET AL: "The effect of laser annealing on laser-induced damage threshold" JOURNAL OF MODERN OPTICS UK, vol. 37, no. 4, April 1990 (1990-04), pages 787-802, XP009039983 ISSN: 0950-0340 See also references of WO 02071556A2 UT DIIDW:2002706733 ER PT P PN EP1207423-A1; CN1354392-A; JP2002156750-A; US2002146641-A1; KR2002039241-A; TW561317-A; US6767686-B2; CN1210624-C; KR798282-B1 TI Chemically amplifying type positive resist composition for lithography, comprises resin having predetermined alkali-soluble group soluble in alkali by the action of acid, and sulfonium salt acid generating agent. AU UETANI Y OHASHI K MORIUMA H KAMIYA Y MORI U AE SUMITOMO CHEM CO LTD (SUMO-C) SUMITOMO CHEM CO LTD (SUMO-C) SUMITOMO CHEM CO LTD (SUMO-C) UETANI Y (UETA-Individual) OHASHI K (OHAS-Individual) MORIUMA H (MORI-Individual) GA 2002676505 AB NOVELTY - The chemically amplifying type positive resist composition comprises a resin and a sulfonium salt acid generating agent (I). The resin contains an alkali-soluble group protected by 2-alkyl-2-adamantyl group or 1-adamantyl-1-alkylalkyl group, which is insoluble or slightly soluble in alkali but soluble in alkali by the action of an acid. USE - For lithography using argon fluoride or krypton fluoride excimer laser used for semiconductor manufacture. ADVANTAGE - The positive resist composition has good resist performances such as sensitivity, resolution and adhesion to substrate and excellent shape of profile. DETAILED DESCRIPTION - The chemically amplifying type positive resist composition comprises: (1) a resin which has an alkali-soluble group protected by 2-alkyl-2-adamantyl group or 1-adamantyl-1-alkylalkyl group, which is insoluble or slightly soluble in alkali but soluble in alkali by the action of an acid; and (2) a sulfonium salt acid generating agent represented by formula (I). Q1, Q2, Q3 = hydrogen, hydroxyl, alkyl having 1-6C or alkoxy having 1-6C; and Q4 = perfluoroalkyl having cyclic structure. TF TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The positive resist composition contains resin (in weight %) (80-99.9) and acid generating agent, including the sulfonium salt acid generating agent of formula (I) and another acid generating agent (0.1-20) based on total solid component weight of resist composition. The resin has at least one polymerization compound (20 mol %) containing a group cleaved by an acid (30-80 mol %), selected from formula (IIa), (IIb), (IIc) or (IId).R1, R3 = hydrogen or methyl; andR2, R4, R5 = alkyl. Preferred Definitions: Anion containing Q4 = 4C or more perfluoroalkylsulfonate anion. EXAMPLE - Solution containing 2-methyl-2-adamantyl methacrylate, 3-hydroxyl-1-adamantyl acrylate, hexahydro-2-oxo-3,5-methanol-2H-cyclopenta(b)furan-6-yl methacrylate and methyl isobutyl ketone was prepared. Azobisisobutyronitrile (2 mol %) was added to solution and heated. Reaction solution was poured into methanol, for precipitation and obtained resin was washed with methanol and copolymer (R) was obtained. Phenacyl bromide (in parts) (14.9), acetone (75), and tetrahydrothiophene (6.6) were stirred and obtained crystals were filtered, washed with solvent (80), containing tert-butyl methyl ether and acetone, and dried. Obtained tetrahydro-1-(2-oxo-2-phenylethyl)thiophenium bromide (4), acetonitrile (160), and potassium trifluoromethanesulfonate (2.62) were stirred, filtered and concentrated. Residue obtained was recrystallized from mixed solvent of acetone and ethyl acetate to give tetrahydro-1-(2-oxo-phenylethyl)thiophenium trifluoromethanesulfonate (3.41) of formula (III). Resist solution containing (III) (0.3) and R (10), 1, 2, 6-diisopropylaniline as quencher (0.0075) propylene glycol monomethyl ether acetate (57) and gamma-butyrolactone (3), was prepared, and filtered by fluorine resin filter, spin-coated on silicon wafer having organic anti-reflection-layer. The resist film obtained had effective sensitivity 50 mJ/cm2, rectangular profile, resolution 0.17 micrometers and transmittance 70%. DC A89 (Photographic, laboratory equipment, optical); A14 (Other substituted mono-olefins, PVC, PTFE); E13 (Heterocyclics); G06 (Photosensitive compositions and bases, photographic processes); L03 (Electro-(in)organic, chemical features of electrical devices); P84 (Other photographic); U11 (Semiconductor Materials and Processes) MC A08-M08; A12-E07C; A12-L02B2; E07-B01; G06-D06; G06-F03C; G06-F03D; L04-C05; U11-A06 IP G03F-007/004; G03F-007/039; C08F-020/18; C08F-032/00; C08K-005/45; C08L-101/02; H01L-021/027; C07C-381/12 PD EP1207423-A1 22 May 2002 G03F-007/004 200273 Pages: 14 English CN1354392-A 19 Jun 2002 G03F-007/039 200273 Chinese JP2002156750-A 31 May 2002 G03F-007/004 200273 Pages: 10 Japanese US2002146641-A1 10 Oct 2002 G03F-007/039 200274 English KR2002039241-A 25 May 2002 G03F-007/039 200275 TW561317-A 11 Nov 2003 G03F-007/004 200428 Chinese US6767686-B2 27 Jul 2004 G03F-007/004 200449 English CN1210624-C 13 Jul 2005 G03F-007/039 200643 Chinese KR798282-B1 28 Jan 2008 G03F-007/039 200929 AD EP1207423-A1 EP126571 15 Nov 2001 CN1354392-A CN135041 16 Nov 2001 JP2002156750-A JP352700 20 Nov 2000 US2002146641-A1 US988006 16 Nov 2001 KR2002039241-A KR071303 16 Nov 2001 TW561317-A TW128053 13 Nov 2001 US6767686-B2 US988006 16 Nov 2001 CN1210624-C CN135041 16 Nov 2001 KR798282-B1 KR071303 16 Nov 2001 FD KR798282-B1 Previous Publ. Patent KR2002039241 PI JP352700 20 Nov 2000 DS EP1207423-A1: (Regional): AL; AT; BE; CH; CY; DE; DK; ES; FI; FR; GB; GR; IE; IT; LI; LT; LU; LV; MC; MK; NL; PT; RO; SE; SI; TR FS 430/270.1; 430/910; 430/914; 430/922; 430/923 CP EP1207423-A1 DE19626003-A1 FUJITSU LTD (FUIT) NOZAKI K, YANO E, WATANABE K, NAMIKI T, IGARASHI M, KURAMITSU Y, TAKECHI S, KOTACHI A, TAKAHASHI M JP2000292917-A US6767686-B2 DE19626003-A1 FUJITSU LTD (FUIT) NOZAKI K, YANO E, WATANABE K, NAMIKI T, IGARASHI M, KURAMITSU Y, TAKECHI S, KOTACHI A, TAKAHASHI M JP2000292917-A US5919596-A US5968713-A FUJITSU LTD (FUIT) NOZAKI K, YANO E, WATANABE K, NAMIKI T, IGARASHI M, KURAMITSU Y, TAKECHI S, KOTACHI A, TAKAHASHI M US6013416-A FUJITSU LTD (FUIT) NOZAKI K, YANO E, WATANABE K, NAMIKI T, IGARASHI M, KURAMITSU Y, TAKECHI S, KOTACHI A, TAKAHASHI M US6187504-B1 JAPAN SYNTHETIC RUBBER CO LTD (JAPS) SUWA M, IWASAWA H, KAJITA T, IWANAGA S US6200725-B1 FUJITSU LTD (FUIT) NOZAKI K, YANO E, WATANABE K, NAMIKI T, IGARASHI M, KURAMITSU Y, TAKECHI S, KOTACHI A, TAKAHASHI M US6322949-B2 JAPAN SYNTHETIC RUBBER CO LTD (JAPS) SUWA M, IWASAWA H, KAJITA T, IWANAGA S US6492091-B2 FUJI PHOTO FILM CO LTD (FUJF) KODAMA K, AOAI T KR798282-B1 KR2000035172-A NEC CORP (NIDE) IWASA S, MAEDA K, HASEGAWA E CR EP1207423-A1 NAGAHARA S. ET AL.: "Methods to Improve Radiation Sensitivity of Chemically Amplified Resists by Using Chain Reactions of Acid Generation" PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, vol. 3999, no. 1, - 28 February 2000 (2000-02-28) pages 386-394, XP002189552 USA DATABASE WPI Section Ch, Week 200118 Derwent Publications Ltd., London, GB; Class A17, AN 2001-172040 XP002189553 & JP 2000 292917 A (TOKYO OHKA KOGYO CO LTD), 20 October 2000 (2000-10-20) DATABASE WPI Section Ch, Week 200118 Derwent Publications Ltd., London, GB; Class A17, AN 2001-172040 XP002189553 & JP 2000 292917 A (TOKYO OHKA KOGYO CO LTD), 20 October 2000 (2000-10-20) NAGAHARA S. ET AL.: "Methods to Improve Radiation Sensitivity of Chemically Amplified Resists by Using Chain Reactions of Acid Generation" PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, vol. 3999, no. 1, - 28 February 2000 (2000-02-28) pages 386-394, XP002189552 USA DATABASE WPI Section Ch, Week 200118 Derwent Publications Ltd., London, GB; Class A17, AN 2001-172040 XP002189553&JP 2000 292917 A (TOKYO OHKA KOGYO CO LTD), 20 October 2000 (2000-10-20) US6767686-B2 Chemical Abstract DN 133:315619 of JP 2000-292917, Oct. 2000.* Derwent Publications Ltd., XP-002189553 and Abstract of JP 2000292917; (Oct. 20, 2000). English translation of JP 2000-292917, Oct. 2000.* Nagahara et al., Proceedings of SPIE, vol. 3999, No. 1, pp. 386-394 (Feb. 28, 2000). DN 560934-0-1-0-K U; 363918-0-0-0-K U; 363919-0-0-0-K U; 192-0-0-0-; 786-0-0-0- MN 006732701 K U CI RA7GZJ-K U; RA3E0B-K U; RA3E0C-K U; R00426-; R00836- UT DIIDW:2002676505 ER PT P PN US2002086222-A1; JP2002196483-A; KR2002052941-A; TW544756-A; US6790564-B2; JP3932805-B2; KR2008027808-A; KR856972-B1 TI Photosensitive resin composition for production of photomask, used for krypton fluoride excimer laser lithography, contains specified light absorption compounds. AU MIGITAKA S ARAI T ARAKI T MOMOSE S YAMAGUCHI O UTAKA S AE MIGITAKA S (MIGI-Individual) ARAI T (ARAI-Individual) ARAKI T (ARAK-Individual) MOMOSE S (MOMO-Individual) YAMAGUCHI O (YAMA-Individual) HITACHI LTD (HITA-C) HITACHI LTD (HITA-C) RENESAS TECHNOLOGY CORP (RENE-C) HITACHI SEISAKUSHO KK (HITA-C) GA 2002673473 AB NOVELTY - A photosensitive resin composition contains specified light absorption compounds. USE - The photosensitive resin composition is used for the production of a photomask used for KrF excimer laser lithography. The lithography technique is used in the production of electronic devices, e.g. semiconductor integrated circuits, superconductive devices, micro-machines, thin film transistors or printed wiring boards. ADVANTAGE - The photosensitive resin composition provides a short photomask manufacturing time at reduced cost, reducing the manufacturing time and cost for semiconductor integrated circuit devices. DETAILED DESCRIPTION - A photosensitive resin composition for the production of a photomask comprises light absorption compounds of formulae (1)-(8) R1-R10 = H, optionally substituted 1-4C alkyl, halo, hydroxy, methylol, optionally substituted 1-4C alkoxy, hydroxyl, phenyl, methoxy, ethoxyethyl, cyclopropyl, acetal or acetyl; X = halogenated acetyl; and Y = camphor sulfonate, trifluoro sulfonate or methane sulfonate. R1-R10 may be identical to or different from each other. INDEPENDENT CLAIMS are also included for the following: (a) a photomask for krypton fluoride (KrF) excimer laser lithography having a shade film comprising a photosensitive polymer layer formed in a pattern (107) on a quartz glass substrate; and (b) the production of photomask with at most 1% transmittance of a KrF excimer laser beam by a shade film on a quartz glass substrate comprising forming a photosensitive polymer layer on the quartz glass substrate, irradiating the KrF excimer laser beam or an electron beam at a wavelength providing at least 40% transmittance through the polymer layer and processing the irradiated polymer layer to render a pattern. DESCRIPTION OF DRAWING(S) - The figure shows a cross-sectional view of one production step for a photomask for KrF excimer laser lithography with an organic resin shade film. Pattern (107) TF TECHNOLOGY FOCUS - ELECTRONICS - Preferred Component: The photomask may include attenuator. It has a phase shifter for shifting a phase of the KrF excimer laser beam in a predetermined pattern by 180degrees on the substrate.Preferred Property: The transmittance of the KrF excimer laser beam by the shade film is at most 0.5%. The transmittance of the KrF excimer laser beam by the attenuator is 2-16%, preferably 4-9%. TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The light absorbent is chemically bonded to composition of the photosensitive polymer layer. DC A89 (Photographic, laboratory equipment, optical); G07 (Photo-mechanical production of printing surfaces); L03 (Electro-(in)organic, chemical features of electrical devices); P83 (Photographic processes, compositions); P84 (Other photographic); S06 (Electrophotography and Photography); U11 (Semiconductor Materials and Processes) MC A08-C01; A08-D; A08-D04; A08-M08; A12-E01; A12-L02B2; G06-D06; G06-F03C; G06-F03D; L04-C05; S06-C02A; U11-A06A; U11-C04E2 IP G03F-009/00; G03C-001/76; H01L-021/8238; H01L-027/092; G03F-007/004; C09K-003/00; G03F-001/08; G03F-007/20; H01L-021/027; G03F-001/10 PD US2002086222-A1 04 Jul 2002 G03F-009/00 200272 Pages: 14 English JP2002196483-A 12 Jul 2002 G03F-007/004 200272 Pages: 17 Japanese KR2002052941-A 04 Jul 2002 G03F-001/08 200302 TW544756-A 01 Aug 2003 H01L-021/027 200411 Chinese US6790564-B2 14 Sep 2004 G03F-009/00 200460 English JP3932805-B2 20 Jun 2007 G03F-007/004 200742 Pages: 18 Japanese KR2008027808-A 28 Mar 2008 G03F-001/08 200864 KR856972-B1 04 Sep 2008 G03F-001/08 200910 AD US2002086222-A1 US020904 19 Dec 2001 JP2002196483-A JP391795 25 Dec 2000 KR2002052941-A KR081310 19 Dec 2001 TW544756-A TW129571 29 Nov 2001 US6790564-B2 US020904 19 Dec 2001 JP3932805-B2 JP391795 25 Dec 2000 KR2008027808-A KR018853 29 Feb 2008 KR856972-B1 KR081310 19 Dec 2001 FD JP3932805-B2 Previous Publ. Patent JP2002196483 KR2008027808-A Div ex Application KR081310 KR856972-B1 Previous Publ. Patent KR2002052941 PI JP391795 25 Dec 2000 US020904 19 Dec 2001 FS 430/270.1; 430/296; 430/311; 430/313; 430/322; 430/5; 430/942; 430/945 CP US6790564-B2 JP04136854-A JP05289307-A US6617265-B2 HITACHI LTD (HITA) TANAKA T, HASEGAWA N JP3932805-B2 JP01102567-A JP02264254-A JP05289307-A JP06061117-A JP07239547-A JP07319155-A JP07325383-A JP08286384-A JP09197669-A JP10069071-A JP11174669-A JP56030129-A JP09508981-W JP2000514205-W DU PONT DE NEMOURS & CO E I (DUPO) FRENCH R, SHARP K G KR856972-B1 JP08286384-A JP09197669-A UT DIIDW:2002673473 ER PT P PN US2002061466-A1; JP2002169296-A; KR2002038283-A; US6686123-B2; TW594401-A; JP4091285-B2 TI New photoresist monomer for photoresist composition used for forming photoresist patterns and semiconductor elements, comprises specific formula. AU LEE G S JUNG J C JUNG M H AE LEE G S (LEEG-Individual) JUNG J C (JUNG-Individual) JUNG M H (JUNG-Individual) HYUNDAI ELECTRONICS IND CO LTD (HYNX-C) HYNIX SEMICONDUCTOR INC (HYNX-C) HYNIX SEMICONDUCTOR INC (HYNX-C) HYNIX SEMICONDUCTOR INC (HYNX-C) HYUNDAI ELECTRONICS IND CO LTD (HYNX-C) GA 2002641940 AB NOVELTY - New photoresist monomer comprises a specific formula. USE - New photoresist monomer for photoresist composition used for forming photoresist patterns and semiconductor elements (claimed). ADVANTAGE - Photoresist polymer formed using photoresist monomer comprising fluorine, has low light absorbance at low wavelength. DETAILED DESCRIPTION - Photoresist monomer of formula (1) is new. R1 = H or CH3; R2 = 1-10C alkylene, 1-10C alkylene substituted with 1-10C alkyl or 1-10C alkylene substituted with 1-10C aryl; and R3 = acid labile protecting group. INDEPENDENT CLAIMS are included for the following: (1) photoresist polymer comprising the photoresist monomer; (2) photoresist composition comprising the photoresist polymer, photoacid generator and an organic solvent; (3) process for forming photoresist pattern,which comprises: (i) coating photoresist composition on a substrate to form a photoresist film; (ii) exposing the photoresist film to light; and (iii) developing the photoresist film; and (4) semiconductor element. TF TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Monomers: The photoresist polymer further comprises a co-monomer of formula (2).R4 = H or CH3.The photoresist polymer comprises repeating units of formula (3), preferably poly(4-(2-(4-hydroxyphenyl)-1,1,3,3,3-hexafluoropropyl) phenyl methacrylate/(1,1,1,3,3,3-hexafluoro-2-tert-butyl carboxylate)isopropyl methacrylate) or poly(4-(2-(4-hydroxyphenyl)-1,1,1,3,3,3-hexafluoropropyl) phenyl acrylate/(1,1,1,3,3,3-hexafluoro-2-tert-butyl carboxylate)isopropyl acrylate).R4 = R1; anda:b = 20-100:0-80 mol%.Preferred Composition: 0.1-10 weight% of photoacid generator present in photoresist composition is phthalimidotrifluoromethane sulfonate, dinitrobenzyltosylate, n-decyl disulfone, diphenyl iodide hexafluorophosphate, diphenyl iodide hexafluoroarsenate, diphenyl iodide hexafluoroantimonate, diphenyl p-methoxyphenyl triflate, diphenyl p-toluenyl triflate, diphenyl p-isobutylphenyl triflate, diphenyl p-tert-butylphenyl triflate, triphenylsulfonium hexafluorophosphate, triphenylsulfonium hexafluoroarsenate, trifluorosulfonium hexafluoroantimonate, triphenylsulfonium triflate and/or dibutylnaphthylsulfonium triflate.Preferred Solvent: 400-3000 weight% of organic solvent present in photoresist composition is ethyl 3-ethoxypropionate, methyl 3-methoxypropionate, cyclohexanone, propyleneglycol methyl ether acetate, 2-heptanone, ethyl lactate, ethylene glycol, diethylene glycol, triethylene glycol, ethylene glycol dimethyl ether, ethylene glycol diethyl ether and/or ethylene glycol dipropyl ether.Preferred Process: Soft baking of substrate before coating with photoresist composition and/or post baking of substrate after coating with photoresist composition, is carried out during process for forming photoresist pattern. Soft and post baking of substrate is carried out at 10-200degreesC.Light used to expose coated substrate, during photoresist pattern formation, is extreme ultraviolet rays, vacuum ultraviolet rays, argon-fluoride laser rays, krypton-fluoride laser rays, E-beam, X-ray or ion beam. Irradiation energy of the light is 0.1-50 mJ/cm2. Preferred Definitions: The acid labile protecting group is tert-butyl, tetrahydropyran-2-yl, 2-methyl tetrahydropyran-2-yl, tetrahydrofuran-2-yl, 2-methyl tetrahydrofuran-2-yl, 1-methoxypropyl, 1-methoxy-1-methylethyl, 1-ethoxyethyl, 1-ethoxy-1-methylethyl, 1-methoxyethyl, 1-ethoxyethyl, tert-butoxyethyl, 1-isobutoxyethyl or 2-acetylmenth-1-yl. SPECIFIC COMPOUNDS - The photoresist monomer is (1,1,1,3,3,3-hexafluoro-2-tert-butyl carboxylate)isopropyl methacrylate or (1,1,1,3,3,3-hexafluoro-2-tert-butyl carboxylate)isopropyl acrylate. EXAMPLE - Tetrahydrofuran (100 ml) was added with 4-(2-(4-hydroxyphenyl)-1,1,1,3,3,3-hexafluoropropyl)phenyl methacrylate (in moles) (0.1), (1,1,1,3,3,3-hexafluoro-2-tert-butyl carboxylate) isopropyl methacrylate (0.1) and 2,2'-azobisisobutyronitrile (0.4 g), heated at 60degreesC, for 8 hours. Poly(4-(2-(4-hydroxyphenyl)-1,1,1,3,3,3-hexafluoropropyl)phenyl methacrylate/(1,1,1,3,3,3-hexafluoro-2-tert-butylcarboxylate)isopropyl methacrylate) polymer was synthesized and filtered using a petroleum ether solution. Propylene glycol methyl ethyl acetate (in grams) (150) was added to the polymer (10), phthalimidotrifluoromethane sulfonate (0.06) and triphenylsulfonium triflate (0.06). The solution was filtered and a photoresist composition was obtained. The photoresist composition was spin-coated on a silicon wafer and soft-baked in an oven at 110degreesC for 90 seconds. The photoresist was exposed to light using krypton-chloride laser exposer and post-baked at 110degreesC for 90 seconds. After post-baking the photoresist was developed in aqueous tetramethylammonium hydroxide solution (2.38 weight%) for 30 seconds, to obtain 0.13 mum L/S pattern. Photoresist pattern was formed using photoresist composition comprising fluorine and having low light absorbance at low wavelength. DC A89 (Photographic, laboratory equipment, optical); A14 (Other substituted mono-olefins, PVC, PTFE); E19 (Other organic compounds general - unknown structure, mixtures); G06 (Photosensitive compositions and bases, photographic processes); L03 (Electro-(in)organic, chemical features of electrical devices); P84 (Other photographic); U11 (Semiconductor Materials and Processes); V05 (Valves, Discharge Tubes and CRTs) MC A01-D10; A01-D12; A04-E10D; A12-E07C; A12-L02B2; E07-A02D; E07-A02J; E10-F02A2; E10-F02A3; E10-G02A1; E10-G02B1; G06-D06; G06-F03C; L04-C05; U11-A06A; U11-C04; V05-M IP G03F-007/038; G03F-007/20; G03F-007/38; G03F-007/40; G03F-007/039; C08F-020/24; H01L-021/027; G03F-007/004; C08F-214/18; C07C-069/653 PD US2002061466-A1 23 May 2002 G03F-007/038 200269 Pages: 9 English JP2002169296-A 14 Jun 2002 G03F-007/039 200269 Pages: 10 Japanese KR2002038283-A 23 May 2002 G03F-007/004 200274 US6686123-B2 03 Feb 2004 G03F-007/004 200413 English TW594401-A 21 Jun 2004 G03F-007/038 200506 Chinese JP4091285-B2 28 May 2008 C07C-069/653 200837 Pages: 18 Japanese AD US2002061466-A1 US035772 09 Nov 2001 JP2002169296-A JP322359 19 Oct 2001 KR2002038283-A KR068423 17 Nov 2000 US6686123-B2 US035772 09 Nov 2001 TW594401-A TW121284 29 Aug 2001 JP4091285-B2 JP322359 19 Oct 2001 FD JP4091285-B2 Previous Publ. Patent JP2002169296 PI KR068423 17 Nov 2000 US035772 09 Nov 2001 FS 430/270.1; 430/271.1; 430/326; 430/907; 526/242; 526/321 CP US6686123-B2 US4027081-A US4983495-A US5085975-A HOECHST AG (FARH) MULLER W H US6511787-B2 SHINETSU CHEM CO LTD (SHIE) HARADA Y, HATAKEYAMA J, WATANABE J, KAWAI Y, SASAGO M, ENDO M, KISHIMURA S, OOTANI M, MIYAZAWA S, TSUTSUMI K, MAEDA K JP4091285-B2 JP10177247-A JP10228111-A FUJI PHOTO FILM CO LTD (FUJF) SATO K CR US6686123-B2 US 2002/0051940 A1, May 2002 Lee et al. US 2002/0058198 A1, May 2002 Klauck-Jacobs et al.* US 2002/0160297 A1, Oct. 2002 Fedynyshyn et al.* US 2002/0164538 A1, Nov. 2002 Allen et al.* US 2003/0036016 A1, Feb. 2003 Szmanda et al.* DN 587078-0-0-0-N; 587079-0-0-0-N; 233-0-0-0-; 131510-0-0-0-; 21-0-0-0-; 243-0-0-0-; 3339-0-0-0- MN 007219801 N; 007219802 N CI RA80IV-N; RA80IW-N; R00867-; R08574-; R00822-; R00930-; R00947- UT DIIDW:2002641940 ER PT P PN JP2002141259-A TI Manufacture of semiconductor device having favorable resist pattern on substrate, involves silylating resist layer formed on organic layer, forming predetermined resist pattern and removing both layers using aqueous liquid. AE SHARP KK (SHAF-C) GA 2002621966 AB NOVELTY - A layer (2) of resist for silylating is formed on water-soluble organic substance layer (3) provided on substrate (1). A predetermined portion of resist layer is exposed and silylated. Resist layer of predetermined pattern is formed by dry image development and desired process is carried out on obtained pattern. Layers (2,3) are removed using aqueous liquid and semiconductor device is obtained. USE - For producing semiconductor devices. ADVANTAGE - The resist pattern and water-soluble organic substance layer are removed easily without damaging the substrate. A favorable resist pattern is formed on the substrate. Since the organic substance and resist layers are formed continuously, the number of process required for semiconductor device manufacture is reduced. DETAILED DESCRIPTION - A layer of resist for silylating is formed on water-soluble organic substance layer provided on substrate. A predetermined portion of resist layer is exposed and silylated. The resist layer of predetermined pattern is formed by dry image development using oxygen plasma. The layer of predetermined pattern is set as a mask and a desired process is carried out. The layers (2,3) are removed using aqueous liquid, and a semiconductor device is obtained. DESCRIPTION OF DRAWING(S) - The figure shows the resist pattern formation and removal of the silylated resist pattern. substrate (1) layer of resist for silylating (2) water-soluble organic substance layer (3) TF TECHNOLOGY FOCUS - ELECTRONICS - Preferred Process: The water-soluble organic substance layer and resist layer are formed continuously using spin coater. The desired process performed on the resist layer of predetermined pattern is ion implantation or etching process. The process which forms resist layer of predetermined pattern is performed in a tank containing aqueous liquid which is used for removing the organic substance layer. Preferred Layer: The resist layer is of positive or negative type. The water-soluble organic substance layer is formed by anti-reflective coating material containing polyvinyl alcohol as main component. The aqueous liquid is aqueous developer, water, or liquid mixture of water and water-soluble organic solvent. EXAMPLE - A water-soluble organic substance containing polyvinyl alcohol (as anti-reflective coating material) was applied on a substrate, and organic substance layer was formed. The formed layer was baked at 90 degrees C for 30 s. A resist material for silylating, was applied on organic substance layer. The resist material contained diazonaphthaquinone, as a photosensitive agent. A chromium mask was formed on the resist layer and a portion of resist layer was exposed to krypton fluoride (KrF) excimer laser. The exposed portion was heated at 150-200 degrees C in hexamethyldisilazone atmosphere. The exposed region was silylated and a silylated resist layer was formed. The unreacted portions of the organic substance layer and resist layer were removed by dry etching, using oxygen as etching gas and resist pattern of high aspect ratio 10-20 was formed. The substrate was put into tank (I) containing pure water, and the resist pattern was removed. After that the substrate was put into tank (II) containing organic solvent or sulfuric acid. Finally, the substrate was put into tank (III) containing pure water, and washed completely. DC A89 (Photographic, laboratory equipment, optical); G06 (Photosensitive compositions and bases, photographic processes); L03 (Electro-(in)organic, chemical features of electrical devices); P84 (Other photographic); U11 (Semiconductor Materials and Processes) MC A10-E22A; A12-E07C; A12-L02B2; G06-D06; G06-F03C; L04-C06B; U11-C04D; U11-C04E1; U11-C07A1 IP G03F-007/11; G03F-007/36; G03F-007/38; G03F-007/40; G03F-007/42; H01L-021/027; H01L-021/3065; H01L-021/308 PD JP2002141259-A 17 May 2002 H01L-021/027 200267 Pages: 5 AD JP2002141259-A JP331072 30 Oct 2000 PI JP331072 30 Oct 2000 UT DIIDW:2002621966 ER PT P PN EP1233005-A1; JP2002316825-A; US2003027705-A1; US6810687-B2; JP4191935-B2; EP1233005-B1; DE60233768-E; EP1233005-B2 TI Production of synthetic quartz glass member for excimer laser optics, involves incorporating hydrogen molecules into glass body by heating glass body at specified temperature under hydrogen-containing atmosphere and specified pressure. AU NISHIMURA H YOKOTA T FUJINOKI A AE HERAEUS QUARZGLAS GMBH & CO KG (HERA-C) SHINETSU QUARTZ PROD CO LTD (SHQZ-C) SHINETSU SEKIEI KK (SHTU-C) NISHIMURA H (NISH-Individual) YOKOTA T (YOKO-Individual) FUJINOKI A (FUJI-Individual) HERAEUS QUARZGLAS GMBH & CO KG (HERA-C) SHINETSU QUARTZ PROD CO LTD (SHQZ-C) SHINETSU SEKIEI KK (SHTU-C) HERAEUS QUARZGLAS GMBH&CO KG (HERA-C) HERAEUS QUARZGLAS GMBH&CO KG (HERA-C) GA 2002610536 AB NOVELTY - A synthetic quartz glass member is produced by incorporating hydrogen molecules into quartz glass body by heating the glass body at at most 600 degrees C under hydrogen-containing atmosphere and a pressure of at least 1 but less than 150 atmospheres. The pressure of hydrogen-containing gas is varied continuously or stepwise in a portion of heat-treatment. USE - The method is used to produce synthetic quartz glass member for excimer laser optics. The quartz glass member is useful in lithography apparatus for producing semiconductor device and in other ultraviolet radiation optics. ADVANTAGE - The method enables homogenous doping of hydrogen molecules. This improves the resistance of quartz glass against excimer laser radiation, thus providing quartz glass member which exhibits high resistance against laser radiation without impairing the homogeneity in refractive index and optical properties, e.g. birefringence. The glass member is stable and has longer life even when used for high energy ultraviolet-emitting pulse laser. TF TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Method: The glass body is heat-treated under hydrogen-containing atmosphere for a first predetermined time under a pressure of first setting and for a second predetermined time under a pressure of second setting that is lower than the pressure of first setting. The glass body is prepared by either direct or in-direct flame hydrolysis method. Hydrogen is uniformly incorporated in the glass body. The pressure of hydrogen-containing gas is decreased.Preferred Properties: Under a radiation of 632.8 nm, the glass member exhibits a homogeneity in refractive index of at most +/-4 x 10 power minus 6/cm and a birefringence of at most 2 nm/cm. When the glass member is irradiated with argon fluoride excimer laser radiation for a repetition of 2x10 power 5 pulses with an energy density/pulse of 2 mJ/square cm at 200 Hz, the member yields an induced absorption of at most 0.003 (as expressed by absorbance for 1 cm thickness) under an irradiation wavelength of 215 nm. When the glass member is irradiated with krypton fluoride excimer laser radiation for a repetition of 2x10 power 5 pulses with an energy density/pulse of 100 mJ/cm2 at 200 Hz, the member yields an induced absorption of at most 0.075 (as expressed by absorbance for 1 cm thickness) under an irradiation wavelength of 210 nm. TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Composition: The hydrogen-containing atmosphere comprises 100% gaseous hydrogen or a mixture of hydrogen and nitrogen, argon, or helium. DC L01 (Glass including composition, forming, but not containers); L03 (Electro-(in)organic, chemical features of electrical devices) MC L01-G05A; L01-L05; L03-F02 IP C03B-019/14; C03C-003/06; C03B-008/04; C03B-020/00; H01S-003/034; C03C-021/00; C03B-032/00 PD EP1233005-A1 21 Aug 2002 C03B-019/14 200266 Pages: 18 English JP2002316825-A 31 Oct 2002 C03B-008/04 200304 Pages: 10 Japanese US2003027705-A1 06 Feb 2003 C03C-003/06 200313 English US6810687-B2 02 Nov 2004 C03C-021/00 200472 English JP4191935-B2 03 Dec 2008 C03B-032/00 200881 Pages: 13 Japanese EP1233005-B1 23 Sep 2009 C03B-019/14 200963 English DE60233768-E 05 Nov 2009 C03B-019/14 200973 German EP1233005-B2 16 Jan 2013 C03B-019/14 201306 English AD EP1233005-A1 EP003077 13 Feb 2002 JP2002316825-A JP037884 15 Feb 2002 US2003027705-A1 US076034 13 Feb 2002 US6810687-B2 US076034 13 Feb 2002 JP4191935-B2 JP037884 15 Feb 2002 EP1233005-B1 EP003077 13 Feb 2002 DE60233768-E DE633768 13 Feb 2002 EP1233005-B2 EP003077 13 Feb 2002 FD JP4191935-B2 Previous Publ. Patent JP2002316825 DE60233768-E EP application Application EP003077 DE60233768-E Based on Patent EP1233005 PI JP038112 15 Feb 2001 DS EP1233005-A1: (Regional): AL; AT; BE; CH; CY; DE; DK; ES; FI; FR; GB; GR; IE; IT; LI; LT; LU; LV; MC; MK; NL; PT; RO; SE; SI; TR EP1233005-B1: (Regional): AT; DE; FR; GB; NL EP1233005-B2: (Regional): AT; DE; FR; GB; NL FS 264/234; 501/54; 651/57; 651/7.4; 651/7.5; 652/9.15; 652/9.19; 653/2.1; 653/79; 653/84; 654/24 CP EP1233005-A1 US6094941-A US6810687-B2 JP03088742-A JP03088743-A JP06166522-A JP2000095535-A US5410428-A SHINETSU QUARTZ PROD CO (SHQZ); HERAEUS QUARZGLAS GMBH (HERA) YAMAGATA S, KURIYAMA M, INAKI K, TAKKE R US5616159-A US5668067-A US5983673-A US6094941-A US20020194869-A1 US20030066309-A1 US6339033-B2 JP4191935-B2 JP2000095535-A EP1233005-B1 US6094941-A CR US6810687-B2 Patent Abstracts of Japan for Janaese published application 03-088743 A (1991). Patent Abstracts of Japan for Janaese published application 06-166522 A (1994). UT DIIDW:2002610536 ER PT P PN US6410748-B1 TI Monomer for synthesizing high molecular compounds used as base resin in photosensitive compositions for forming patterns, is new. AU SHIDA N USHIROGOUCHI T ASAKAWA K OKINO T HAYASE S NAKANO Y NAKASE M AE TOSHIBA KK (TOKE-C) GA 2002597925 AB NOVELTY - A monomer is new. USE - Useful for synthesizing a higher molecular compound used as a base resin in a photosensitive composition. The photosensitive composition is utilized for formation of a pattern by use of a krypton fluoride excimer laser beam, an argon fluoride excimer laser beam, a fluorine laser beam, i-line, a deep ultraviolet ray, an electron beam, an X-ray, etc, and is utilized in photolithographic technique for manufacture of a semiconductor device. ADVANTAGE - The photosensitive composition containing high molecular compound of monomers, has excellent transparency to light of short wavelength, such as an ultraviolet ray, a deep ultraviolet beam, krypton fluoride excimer laser beam having a wavelength of 248 nm, an argon fluoride excimer laser beam having a wavelength of 193 nm, a fluorine laser beam, an electron beam or an X-ray, solubility, alkali-developing property, dry-etching resistance, heat resistance and adhesion to a substrate. The photosensitive composition is capable of forming a ultrafine resist pattern having excellent dry etching resistance, and line width of not more than subquarter micron, and excellent in rectangular configuration in cross-section with high precision. DETAILED DESCRIPTION - A monomer of formula (m-1) is new. R0 = alicyclic group; R2 = hydrogen, halogen or monovalent organic group; X0 = CO, C(=O)O, SO2, O, OC(=O), OCH2C(=O), C(=O)NR3 or S(=O)2NR3, where R3 is hydrogen, halogen or hydrocarbon; j = integer of 0-3; and R100 = group of formula (X2)k-(R5),-Si(R7)3 (R1-3), or formula (X102)k-R4-(X3)m-C(R6)3 (R11-2) . X3 = C=O, C(=O)O, SO2, OCH2C(=O)O, C(=O)NR3, S(=O)2NR3, OSO2 or S(=O)2O; n, k, m = j; R5 = bivalent alkyl group; R7, R6 = R2; X102 = C=O, C(=O)NR3, SO2, S(=O)2NR3, OCH2C(=O)O, OSO2, or S(=O)2O; R4 = bivalent alkyl group; and X2 = X3, OC(=O) or O. INDEPENDENT CLAIMS are included for the following: (1) monomers of formula (m-2); and (2) monomers of formula (m-3). R = R0; X1 = X0; R1 = R100; and R8 = hydrocarbon, pentacycloalkyl, tetracycloalkyl, tricycloalkyl, bicycloalkyl, heterocycloalkyl or group containing terpenoid skeleton where at least one of R8 is combined with R to form a ring. TF WIDER DISCLOSURE - Also disclosed are higher molecular compounds containing monomers, and photosensitive compositions which contain the higher molecular compounds and photo-acid generating agent. EXAMPLE - An acetylterpineol, methacrylic chloride and butyl lithium were dissolved in tetrahydrofuran to obtain a mixed solution which was refluxed at room temperature for 8 hours. The reaction of the mixed solution was quenched by adding an aqueous saturated solution of sodium hydrogen carbonate and then ethyl ether. The solution was then allowed to separate into two phases, and after the aqueous solution was extracted with ethyl ether, the organic phase was extracted and washed with an aqueous saturated solution of sodium hydrogen carbonate. The organic phase was then dried over anhydrous sodium sulfate, and the resultant oily product was distilled under reduced pressure to obtain acetylterpinyl methacrylate. A photo-acid generating agent and triphenylsulfonium triflate were added to a copolymer consisting of acetylterpinyl methacrylate and t-butyl methacrylate (1:1) as a base resin at a ratio of 1 mol%, and the resultant mixture was dissolved in cyclohexanone, to form a photosensitive composition. The photosensitive composition was coated on a silicon wafer to a thickness of 0.3 microm and then prebaked at 100degreesC to form a resist film. The predetermined region of the resist film was exposed to argon fluoride excimer laser, and developed using tetramethylammonium hydroxide to form a line and space pattern of 0.13 microm in line width. Etching rate of the photosensitive composition was measured using carbon tetrafluoride, and dry etching property was evaluated under conditions: flow rate of carbon tetrafluoride gas of 12.6 sccm, vacuum degree of 10 mtorr and output of microwave of 150 W. The photosensitive composition had excellent resolution (0.13 microm) and etching resistance (1.2). DC A41 (Monomers, Condensants (see also Section E)); E13 (Heterocyclics); G06 (Photosensitive compositions and bases, photographic processes); L03 (Electro-(in)organic, chemical features of electrical devices); U11 (Semiconductor Materials and Processes) MC A01-D00D; A04-H00H; A12-E07C; A12-L02B2; E06-H; E07-H; E09-H; E10-A08C; E10-A09B; E10-A09B3; E10-A10A; E10-A10D; E10-D01C; E10-D03A; E10-D03C; E10-D03D; E10-G02A2; G06-D06; G06-F03C; G06-F03D; L04-C05; U11-A06 IP C07C-041/00; C07C-049/00; C07C-069/52; C07C-069/74; C07D-209/48; C07D-335/00; C07F-007/08 PD US6410748-B1 25 Jun 2002 C07D-209/48 200264 Pages: 59 AD US6410748-B1 US847387 03 May 2001 FD US6410748-B1 Div ex Patent US6291129 US6410748-B1 Div ex Application US143533 PI JP234393 29 Aug 1997 JP243939 28 Aug 1998 FS 52249; 52250; 525353; 548475; 54913; 54918; 54928; 549421; 549475; 54962; 556457; 556465; 560220; 56838; 568579; 568670 CP US6410748-B1 JP8082925-A TOSHIBA KK (TOKE) SHIDA N, USHIROGOUCHI T, NAITO T, NAKASE M JP8328242-A TOSHIBA KK (TOKE) JP9166868-A TOSHIBA KK (TOKE) ASAKAWA K, USHIROGOCHI T, SHIDA N, NAKASE M JP9230597-A YASUHARA CHEM KK (YASU-Non-standard) US5621019-A NEC CORP (NIDE) US5665518-A NEC CORP (NIDE) US5837419-A TOSHIBA KK (TOKE) US6060207 TOSHIBA KK (TOKE) SHIDA N, USHIROGOUCHI T, NAITO T, NAKASE M US6291129 TOSHIBA KK (TOKE) CR US6410748-B1 Morikawa, et al. ; Chemical Abstract (Access No. 1997:609732) English Abstract of JP 09230597 Sep. 9, 1997. Shinoda, et al. ; Chemical Abstract (Access No. 1997:174516) English Abstract of JP 08328242 Dec. 13, 1996. MN 007170101 N; 007170102 N; 007170103 N UT DIIDW:2002597925 ER PT P PN EP1199603-A1; EP1199603-A9; JP2002131897-A; US2002102491-A1; JP2002214774-A; KR2002031081-A; TW536663-A; US6749987-B2; US2005130060-A1; US2007003871-A1; JP4150509-B2; US7435526-B2; KR795872-B1; JP4262402-B2; US2009148791-A1; US7776512-B2; US2010255419-A1; US7812194-B2; US8685614-B2 TI Positive photosensitive composition used in manufacture of lithographic printing plate or semiconductor, comprises photo-acid generator, and resin capable of decomposing under the action of acid. AU KODAMA K AOAI T AOSO T AE FUJI PHOTO FILM CO LTD (FUJF-C) FUJI PHOTO FILM CO LTD (FUJF-C) FUJI PHOTO FILM CO LTD (FUJF-C) FUJI FILM CORP (FUJF-C) FUJITSU CO LTD (FUIT-C) FUJI FILM CORP (FUJF-C) GA 2002592547 AB NOVELTY - A positive photosensitive composition comprises a compound capable of generating specified sulfonic acid upon irradiation with actinic ray or radiation, and resin capable of decomposing under the action of an acid to increase the solubility in an alkali developer. USE - Used in the manufacture of a lithographic printing plate or a semiconductor, e.g. integrated circuit, in production of a circuit board for a liquid crystal device or a thermal head, and in the process of photofabrication for other devices. ADVANTAGE - The invention can ensure high resolution and improved exposure margin in photolithography utilizing a light source for short-wavelength exposure enabling super minute patterning and a chemical-amplification positive resist. It enables reduction in scum and improvement in process latitude, including exposure margin and focus depth. It can also deliver excellent resist performance even when electron beams are used as energy beams for irradiation. DETAILED DESCRIPTION - A positive photosensitive composition comprises a compound capable of generating specified sulfonic acid of formula (X) upon irradiation with actinic ray or radiation, and resin capable of decomposing under the action of an acid to increase the solubility in an alkali developer. R1a-R13a = H, (halo)alkyl, halo, or hydroxyl; A1, A2 = single bond or hetero atom-containing divalent linkage group; m1-m5 = 0-12; p = 0-4. When each of A1 and A2 is single bond, all of the R1a-R13a do not simultaneously represent a fluorine and a hydrogen atom. TF TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The photosensitive composition further comprises a dissolution-inhibiting compound having a molecular weight of not more than 3000 which contains an acid-decomposable group and can increase the solubility in an alkali developer by the action of an acid, and a resin insoluble in water and soluble in an alkali developer.Preferred Compounds: The sulfonic acid comprises compound of formula (X'), preferably CF3CF2-O-CF2CF2SO3H.The photo-acid generator comprises at least one of compounds of formulae (I)-(III).n = m;q = 1-3;R1-R37 = H, 1-4C alkyl, 3-8C cycloalkyl, 1-4C alkoxy, hydroxyl, halo, or -S-R38;R38 = 1-12C alkyl, 3-8C cycloalkyl, or 6-14C aryl;X = anion of the sulfonic acid. TECHNOLOGY FOCUS - POLYMERS - Preferred Resin: The resin contains a lactone structure, or at least one of a monocyclic alicyclic structure and a polycyclic alicyclic structure. EXAMPLE - Resist composition was prepared comprising acid generator of formula (A-24) (0.4 g), p-(1-(cyclohexylethylethoxy)ethoxy)styrene/p-hydroxystyrene (30/70) copolymer (10 g), 1.5-diazabicylo(4.3.5)-5-nonene (0.05 g), Megafac R08 (RTM) surfactant (0.02 g), and propylene glycol monomethyl ether acetate/propylene glycol monomethyl ether (8/2). The resist composition achieved high resolution (0.125 mum), wide exposure margin (12.0%), and broad focus depth (1.4) in the pattern formation by exposure to krypton fluoride excimer laser as a far ultraviolet ray. There was also no development residues detected on the formed resist films. The resist composition also achieved highly sensitive and highly resolved pattern formation by electron-beam irradiation, and ensured a rectangular profile in the resist patterns without providing an inverted taper profile. DC A89 (Photographic, laboratory equipment, optical); E19 (Other organic compounds general - unknown structure, mixtures); G06 (Photosensitive compositions and bases, photographic processes); L03 (Electro-(in)organic, chemical features of electrical devices); P84 (Other photographic); S06 (Electrophotography and Photography); U11 (Semiconductor Materials and Processes); P83 (Photographic processes, compositions) MC A08-M08; A12-E07C; A12-L02B1; A12-L02B2; A12-W07B; E05-K; E06-B02; E07-B01; E10-A01; E10-A08C; E10-A09B8; G05-A01; G06-D05; G06-D06; G06-F03C; G06-F03D; L03-G05B; L04-C05; S06-C03; U11-A06A IP G03F-007/004; C07C-309/06; C07C-381/12; G03F-007/039; C07C-309/08; C07C-309/10; C07C-309/17; C08K-005/00; C08L-101/02; C09K-003/00; H01L-021/027; G03F-007/038; C07C-025/02; C07C-309/09; C07C-309/68; C07C-317/28; C08K-005/42; C08L-101/12; C07C-315/00; G03C-001/76; G03C-001/00; C07C-309/07; G03F-007/20; C07C-309/00 PD EP1199603-A1 24 Apr 2002 G03F-007/004 200264 Pages: 148 English EP1199603-A9 31 Jul 2002 G03F-007/004 200264 English JP2002131897-A 09 May 2002 G03F-007/004 200264 Pages: 63 Japanese US2002102491-A1 01 Aug 2002 G03F-007/038 200264 English JP2002214774-A 31 Jul 2002 G03F-007/004 200265 Pages: 58 Japanese KR2002031081-A 26 Apr 2002 G03F-007/039 200270 TW536663-A 11 Jun 2003 G03F-007/004 200374 Chinese US6749987-B2 15 Jun 2004 G03F-007/004 200439 English US2005130060-A1 16 Jun 2005 G03C-001/76 200540 English US2007003871-A1 04 Jan 2007 G03C-001/00 200703 English JP4150509-B2 17 Sep 2008 G03F-007/004 200863 Pages: 84 Japanese US7435526-B2 14 Oct 2008 G03F-007/004 200868 English KR795872-B1 21 Jan 2008 G03F-007/039 200929 JP4262402-B2 13 May 2009 G03F-007/004 200933 Pages: 93 Japanese US2009148791-A1 11 Jun 2009 G03F-007/004 200939 English US7776512-B2 17 Aug 2010 G03F-007/039 201054 English US2010255419-A1 07 Oct 2010 G03F-007/004 201066 English US7812194-B2 12 Oct 2010 G03F-007/039 201067 English US8685614-B2 01 Apr 2014 G03F-007/039 201423 English AD EP1199603-A1 EP124329 19 Oct 2001 JP2002131897-A JP321128 20 Oct 2000 US2002102491-A1 US978103 17 Oct 2001 JP2002214774-A JP132546 27 Apr 2001 KR2002031081-A KR064821 19 Oct 2001 TW536663-A TW125903 19 Oct 2001 US6749987-B2 US978103 17 Oct 2001 US2005130060-A1 US866054 14 Jun 2004 US2007003871-A1 US512173 30 Aug 2006 JP4150509-B2 JP132546 27 Apr 2001 US7435526-B2 US866054 14 Jun 2004 KR795872-B1 KR064821 19 Oct 2001 JP4262402-B2 JP321128 20 Oct 2000 US2009148791-A1 US362097 29 Jan 2009 US7776512-B2 US362097 29 Jan 2009 US2010255419-A1 US816738 16 Jun 2010 US7812194-B2 US512173 30 Aug 2006 US8685614-B2 US816738 16 Jun 2010 FD US2005130060-A1 Div ex Application US978103 US2005130060-A1 Div ex Patent US6749987 US2007003871-A1 Div ex Application US978103 US2007003871-A1 Div ex Application US860054 US2007003871-A1 Div ex Patent US6749987 JP4150509-B2 Previous Publ. Patent JP2002214774 US7435526-B2 Div ex Application US978103 US7435526-B2 Div ex Patent US6749987 KR795872-B1 Previous Publ. Patent KR2002031081 JP4262402-B2 Previous Publ. Patent JP2002131897 US2009148791-A1 Cont of Application US512173 US2009148791-A1 Div ex Application US866054 US2009148791-A1 Div ex Application US978103 US2009148791-A1 Div ex Patent US7435526 US2009148791-A1 Div ex Patent US6749987 US7776512-B2 Cont of Application US512173 US7776512-B2 Div ex Application US866054 US7776512-B2 Div ex Application US978103 US7776512-B2 Div ex Patent US7435526 US7776512-B2 Div ex Patent US6749987 US2010255419-A1 Cont of Application US362097 US2010255419-A1 Cont of Application US512173 US2010255419-A1 Div ex Application US866054 US2010255419-A1 Div ex Application US978103 US2010255419-A1 Div ex Patent US6749987 US2010255419-A1 Div ex Patent US7435526 US2010255419-A1 Cont of Patent US7776512 US7812194-B2 Div ex Application US866054 US7812194-B2 Div ex Application US978103 US7812194-B2 Div ex Patent US6749987 US7812194-B2 Div ex Patent US7435526 US8685614-B2 Cont of Application US362097 US8685614-B2 Cont of Application US512173 US8685614-B2 Div ex Application US866054 US8685614-B2 Div ex Application US978103 US8685614-B2 Div ex Patent US6749987 US8685614-B2 Div ex Patent US7435526 US8685614-B2 Cont of Patent US7812194 US8685614-B2 Cont of Patent US7776512 PI JP321128 20 Oct 2000 JP352899 20 Nov 2000 JP132546 27 Apr 2001 DS EP1199603-A1: (Regional): AL; AT; BE; CH; CY; DE; DK; ES; FI; FR; GB; GR; IE; IT; LI; LT; LU; LV; MC; MK; NL; PT; RO; SE; SI; TR EP1199603-A9: (Regional): AL; AT; BE; CH; CY; DE; DK; ES; FI; FR; GB; GR; IE; IT; LI; LT; LU; LV; MC; MK; NL; PT; RO; SE; SI; TR CP EP1199603-A1 DD295421-A EP1033624-A1 CLARIANT INT LTD (CLRN) PAWLOWSKI G, OKAZAKI H, KINOSHITA Y, TSUGAMA N, HISHIDA A, MA X, YAMAGUCHI Y EP1041442-A1 SUMITOMO CHEM CO LTD (SUMO) UETANI Y, OOHASHI K, INOUE H EP693468-A2 MINNESOTA MINING & MFG CO (MINN) VOGEL D E, VOGEL K M EP693468-A3 MINNESOTA MINING & MFG CO (MINN) VOGEL D E, VOGEL K M JP08027094-A EP1199603-A9 DD295421-A EP1033624-A1 CLARIANT INT LTD (CLRN) PAWLOWSKI G, OKAZAKI H, KINOSHITA Y, TSUGAMA N, HISHIDA A, MA X, YAMAGUCHI Y EP1041442-A1 SUMITOMO CHEM CO LTD (SUMO) UETANI Y, OOHASHI K, INOUE H EP693468-A2 MINNESOTA MINING & MFG CO (MINN) VOGEL D E, VOGEL K M US6749987-B2 JP10010715-A US5498820-A US20020197558-A1 DD295421-A EP1033624-A1 CLARIANT INT LTD (CLRN) PAWLOWSKI G, OKAZAKI H, KINOSHITA Y, TSUGAMA N, HISHIDA A, MA X, YAMAGUCHI Y EP1041442-A1 SUMITOMO CHEM CO LTD (SUMO) UETANI Y, OOHASHI K, INOUE H EP693468-A2 MINNESOTA MINING & MFG CO (MINN) VOGEL D E, VOGEL K M JP09012537-A JP2000275845-A SUMITOMO CHEM CO LTD (SUMO) UETANI Y, INOUE H JP4150509-B2 JP10007650-A SHINETSU CHEM IND CO LTD (SHIE); 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NIPPON TELEGRAPH & TELEPHONE CORP (NITE) OSAWA Y, WATANABE S, TAKEMURA K, NAGURA S, TANAKA H, KAWAI Y JP10010715-A JP2000034274-A KOREA KUMHO PETROCHEMICAL CO LTD (KKPT) PARK J, SEO D, PARK S, KIM S JP2001133967-A US7776512-B2 DE295421-A5 EP985974-A1 SHIPLEY CO LLC (SHIL) TREFONAS P EP1033624-A1 CLARIANT INT LTD (CLRN) PAWLOWSKI G, OKAZAKI H, KINOSHITA Y, TSUGAMA N, HISHIDA A, MA X, YAMAGUCHI Y EP1041442-A1 SUMITOMO CHEM CO LTD (SUMO) UETANI Y, OOHASHI K, INOUE H EP693468-A2 MINNESOTA MINING & MFG CO (MINN) VOGEL D E, VOGEL K M JP09012537-A JP10007650-A SHINETSU CHEM IND CO LTD (SHIE); NIPPON TELEGRAPH & TELEPHONE CORP (NITE) OSAWA Y, WATANABE S, TAKEMURA K, NAGURA S, TANAKA H, KAWAI Y JP10010715-A JP55106453-A AS BELO GEN INORG (ABGE-Soviet Institute) JP2000275845-A SUMITOMO CHEM CO LTD (SUMO) UETANI Y, INOUE H JP2001133967-A US5498820-A US5635332-A NEC CORP (NIDE) NAKANO K, MAEDA K, IWASA S, HASEGAWA E US5824824-A SHINETSU CHEM IND CO LTD (SHIE); NIPPON TELEGRAPH & TELEPHONE CORP (NITE) OSAWA Y, WATANABE S, TAKEMURA K, NAGURA S, TANAKA H, KAWAI Y US5968713-A FUJITSU LTD (FUIT) NOZAKI K, YANO E, WATANABE K, NAMIKI T, IGARASHI M, KURAMITSU Y, TAKECHI S, KOTACHI A, TAKAHASHI M US20010044072-A1 US20020197558-A1 US6306555-B1 CIBA SPECIALTY CHEM HOLDING INC (CIBA) SCHULZ R, BIRBAUM J, WOLF J, ILG S, YAMATO H, ASAKURA T US6692897-B2 FUJI PHOTO FILM CO LTD (FUJF) FUJIMORI T, KAWABE Y, NAKAO H US6749987-B2 FUJI PHOTO FILM CO LTD (FUJF) KODAMA K, AOAI T US6783927-B2 US6849374-B2 SHIPLEY CO LLC (SHIL) CAMERON J F, ZYDOWSKY T M US6855476-B2 ARCH SPECIALTY CHEM INC (ARCH-Non-standard) FERREIRA L, BLAKENEY A J, SPAZIANO G D, DIMOV O, KOCAB T J, HATFIELD J P US6908722-B2 JSR CORP (JAPS) EBATA S, YONEDA E, NAGAI T, TONERI T, WANG Y, IWASAWA H, NISHIMURA Y WO2000008525-A1 US8685614-B2 DE295421-A5 EP985974-A1 SHIPLEY CO LLC (SHIL) TREFONAS P EP1033624-A1 CLARIANT INT LTD (CLRN) PAWLOWSKI G, OKAZAKI H, KINOSHITA Y, TSUGAMA N, HISHIDA A, MA X, YAMAGUCHI Y EP1041442-A1 SUMITOMO CHEM CO LTD (SUMO) UETANI Y, OOHASHI K, INOUE H EP693468-A2 MINNESOTA MINING & MFG CO (MINN) VOGEL D E, VOGEL K M JP09012537-A JP10007650-A SHINETSU CHEM IND CO LTD (SHIE); NIPPON TELEGRAPH & TELEPHONE CORP (NITE) OSAWA Y, WATANABE S, TAKEMURA K, NAGURA S, TANAKA H, KAWAI Y JP10010715-A JP55106453-A AS BELO GEN INORG (ABGE-Soviet Institute) JP2000275845-A SUMITOMO CHEM CO LTD (SUMO) UETANI Y, INOUE H JP2001133967-A US5258257-A SHIPLEY CO INC (SHIL) SINTA R, HEMOND R C, MEDEIROS D R, RAJARATNAM M M, THACKERAY J W, CANISTRO D US5498820-A US5635332-A NEC CORP (NIDE) NAKANO K, MAEDA K, IWASA S, HASEGAWA E US5824824-A SHINETSU CHEM IND CO LTD (SHIE); NIPPON TELEGRAPH & TELEPHONE CORP (NITE) OSAWA Y, WATANABE S, TAKEMURA K, NAGURA S, TANAKA H, KAWAI Y US5843624-A LUCENT TECHNOLOGIES INC (LUCE) HOULIHAN F M, REICHMANIS E, NALAMASU O, WALLOW T I US5929176-A HYUNDAI ELECTRONICS IND CO LTD (HYNX); KOREA ADV INST SCI&TECHNOLOGY (KOAD) KIM J B, KIM H W, KIM J S US5968713-A FUJITSU LTD (FUIT) NOZAKI K, YANO E, WATANABE K, NAMIKI T, IGARASHI M, KURAMITSU Y, TAKECHI S, KOTACHI A, TAKAHASHI M US6057083-A SHIPLEY CO LLC (SHIL) TAYLOR G N, SZMANDA C R US6090526-A SHIPLEY CO LLC (SHIL) UDAY K US20010044072-A1 US20020197558-A1 US20090148791-A1 US6306555-B1 CIBA SPECIALTY CHEM HOLDING INC (CIBA) SCHULZ R, BIRBAUM J, WOLF J, ILG S, YAMATO H, ASAKURA T US6692897-B2 FUJI PHOTO FILM CO LTD (FUJF) FUJIMORI T, KAWABE Y, NAKAO H US6749987-B2 FUJI PHOTO FILM CO LTD (FUJF) KODAMA K, AOAI T US6783927-B2 US6849374-B2 SHIPLEY CO LLC (SHIL) CAMERON J F, ZYDOWSKY T M US6855476-B2 ARCH SPECIALTY CHEM INC (ARCH-Non-standard) FERREIRA L, BLAKENEY A J, SPAZIANO G D, DIMOV O, KOCAB T J, HATFIELD J P US6908722-B2 JSR CORP (JAPS) EBATA S, YONEDA E, NAGAI T, TONERI T, WANG Y, IWASAWA H, NISHIMURA Y WO2000008525-A1 CR EP1199603-A1 DATABASE WPI Section Ch, Week 199614 Derwent Publications Ltd., London, GB; 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Ferreira et al. US 20020197558 Dec. 2002.* XP-002188319-Abstract (Jan. 30, 1996). US7435526-B2 CA 55:13179. CA 68:12389. CA 69:95876. CA 94:130305 for JP 55106453, Aug. 1980. European Search Report dated Feb. 11, 2002. US7776512-B2 CA 94:130305 for JP 55106453, Aug. 1980. CA 69:95876 1968. CA 68:12389 1967. CA 55:13179 1960. XP-002188319_Abstract of JP 08/027094 Jan. 30, 1996. European Search Report dated Feb. 11, 2002. CA 116:245286 abstract of DD 295421, Oct. 31, 1991. CA 128:161008 abstract of JP 10010715, Jan. 16, 1998. Houlihan et al., Chem. Mater. year 2000, web published date Oct. 28, 2000, vol. 12, pp. 3516-3524, American Chemical Society. English translation of JP, 2001-133967, A (2001) from machine translation from AIPN Japan Patent Office National center for Industrial Property Information and Training, generated Jul. 9, 2008, 10 pages. King et al. J. ORg. Chem 1996, No Month Given, vol. 61, pp. 7250-7255, American Chemical Society. Lee et al, Journal of Photopolymer Science and Technology, vol. 13, No. 2 (2000) pp. 215-216. No month given. AN 2000:579488 CAPLUS File, Copyright 2008 ACS on STN 2 pages Entered: Aug. 23, 2000 abstract of Lee article from Journal of Photopolymer Science and Technology (2000), 13(2), 215-216. English translation of JP 10-007650, A (1998) from machine translation from AIPN Japan Patent Office National center for Industrial Property Information and training, generated May 14, 2008, 24 pages. Research Disclosure No. 337007 published May 1992, 2 pages, Kenneth Mason Publications Ltd. A Japanese Office Action dated Apr. 9, 2008. A Japanese Office Action dated Apr. 16, 2008. US8685614-B2 Blue Book (Guide), p. 13 PAC, 1994, 66, 1077 (Glossary of terms used in physical organic chemistry (IUPAC Recommendations 1994)) on p. 1169 and IUPAC. Compendium of Chemical Terminology, 2nd ed. (the "Gold Book"). obtained from http://goldbook.iupac.org/S06076.html. CA 94:130305 for JP 55106453, Aug. 1980. CA 69:95876 1968. CA 68:12389 1967. CA 55:13179 1960. XP002188319_Abstract of JP 08/027094 Jan. 30, 1996. European Search Report dated Feb. 11, 2002. CA 116:245286 abstract of DD 295421, Oct. 31, 1991. CA 128:161008 abstract of JP 10010715, Jan. 16, 1998. Houlihan et al., Chem. Mater. year 2000, web published date Oct. 28, 2000, vol. 12, pp. 3516-3524, American Chemical Society. English translation of JP, 2001-133967, A (2001) from machine translation from AIPN Japan Patent Office National center for Industrial Property Information and Training, generated Jul. 9, 2008, 10 pages. King et al. J. ORg. Chem 1996, No Month Given, vol. 61, pp. 7250-7255, American Chemical Society. Lee et al, Journal of Photopolymer Science and Technology, vol. 13, No. 2 (2000) pp. 215-216. no month given. AN 2000:579488 CAPLUS File, Copyright 2008 ACS on STN 2 pages Entered: Aug. 23, 2000 abstract of Lee article from Journal of Photopolymer Science and Technology (2000), 13(2), 215-216. English translation of JP 10-007650, A (1998) from machine translation from AIPN Japan Patent Office National center for Industrial Property Information and training, generated May 14, 2008, 24 pages. Research Disclosure No. 337007 published May 1992, 2 pages, Kenneth Mason Publications Ltd. Houlihan et al, Chem. Mater. year 2000, web published date Oct. 28, 2000, vol. 12, pp. 3516-3524, American Chemical society. King et al J. ORg. Chem 1996, No Month Given, vol. 61, pp. 7250-7255, American Chemical Society. AN 2000579488, CAPLUS File, Copyrignt 2008 ACS on STN 2 pages Entered: Aug. 23, 2000 abstract of Lee article from Journal of Photopolymer Science and Technology (2000), 13(2), 215-216. Research Disclosure No. 337007 published May 1992, 2 pages. , Kenneth Mason Publications Ltd. A Japanese Office Action dated Apr. 9, 2008, Translation. A Japanese Office Action dated Apr. 16, 2008, Translation. DN 279089-0-0-0-K U; 557956-0-0-0-K U; 557957-0-0-0-K U; 557958-0-0-0-K U; 557959-0-0-0-K U; 557960-0-0-0-K U; 368-0-0-0- MN 006673201 K U; 006673202 K U; 006673203 K U; 006673204 K U; 006673205 K U RI 02844; 03449 CI RA1NH8-K U; RA7ETG-K U; RA7ETH-K U; RA7ETI-K U; RA7ETJ-K U; RA7ETK-K U; R00708- UT DIIDW:2002592547 ER PT P PN JP2002049157-A; KR2002012135-A; US2002042018-A1 TI Positive type chemical amplification resist for pattern formation during electronic device manufacture, comprises photoacid generator, resin and pattern improving agent comprising steroid group compound. AU MAEDA K IWASA S NAKANO K HASEGAWA E AE NEC CORP (NIDE-C) GA 2002577671 AB NOVELTY - A positive type chemical amplification resist comprises photoacid generator which generates acid on exposure, resin with acid decomposable group and with high solubility with alkaline water solution, and pattern improving agent comprising steroid group compound. 0.5 or 8 parts weight (pts. wt.) of pattern improving agent is contained in 100 pts. wt. of resin. USE - For pattern formation (claimed) during electronic device manufacture especially semiconductor element manufacture. ADVANTAGE - Excellent pattern with favorable adhesion with substrate is formed. Destruction of pattern is prevented and pattern is formed with extreme ultraviolet radiation as exposure light. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for pattern formation method of positive chemical amplification resist which involves applying positive type chemical amplification resist on a processed substrate. The substrate is prebaked and the applied resist is exposed to a light of wavelength 120-230 nm, baked and developed. TF TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compounds: The steroid group compound is of formula (I) and has R group as acid decomposable group.The resin has alicyclic lactone structure and/or structure containing 7-13C cyclic hydrocarbon group containing acid decomposable group or the resin has structure of formula (II).R1-R4 = hydrogen, hydroxyl, alkoxy or acetoxy group;R5-R8 = hydrogen or methyl group;R9 = acid decomposable group or 7-13C bridged cyclic hydrocarbon group having acid decomposable group; R10 = hydrogen atom, 1-12C hydrocarbon group or 7-13C bridged cyclic hydrocarbon group containing carboxy group;x, y and z = 0-1;x+y+z = 1. TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Light Source: The light is argon fluoride excimer laser light. EXAMPLE - (In grams) 5-acryloyloxy-2,6-norbornane carbolactone (6), t-butoxycarbonyl tetracyclododecyl acrylate (11.975) and carboxy tetracyclododecyl methacrylate (2.193) were dissolved in 100 ml of dry tetrahydrofuran. After adding 473 mg of azobisisobutyronitrile, reaction was carried out at 60-65 degreesC. After cooling, the obtained polymer was precipitated and resin of formula (III) was obtained. Tributylamine (0.004) was added to above resin (2). Triphenyl sulfonium nonaflate (0.04) as photoacid generator and 6 pts. wt. of cholic acid t-butyl ester as pattern improving agent were added to 100 pts. wt. of resin. The obtained resist was applied on processed silicon substrate. The substrate was baked and exposed to argon fluoride laser light. Subsequently, substrate was baked, washed and pattern was formed on the substrate. A favorable pattern without any destruction and with high resolution was obtained. DC A89 (Photographic, laboratory equipment, optical); E15 (Alicyclics); G06 (Photosensitive compositions and bases, photographic processes); L03 (Electro-(in)organic, chemical features of electrical devices); P84 (Other photographic); S06 (Electrophotography and Photography); U11 (Semiconductor Materials and Processes) MC A04-F06E4; A08-M08; A12-E07C; A12-L02B2; E01; E10-A01; G06-D06; G06-F03C; G06-F03D; L04-C05; S06-A01D; U11-C04D; U11-C04E1 IP G03F-007/039; C08K-005/00; C08K-005/10; C08L-033/14; G03F-007/004; H01L-021/027; G03F-007/038; G03F-007/30; G03F-007/38; G03F-007/40 PD JP2002049157-A 15 Feb 2002 G03F-007/039 200262 Pages: 8 Japanese KR2002012135-A 15 Feb 2002 G03F-007/039 200262 US2002042018-A1 11 Apr 2002 G03F-007/038 200262 English AD JP2002049157-A JP236106 03 Aug 2000 KR2002012135-A KR046727 02 Aug 2001 US2002042018-A1 US921624 03 Aug 2001 PI JP236106 03 Aug 2000 DN 304693-0-0-0-K M; 217923-0-0-0-K M MN 006503802 K M; 006503803 K M; 006503804 K M; 006503805 K M; 006503806 K M; 006503801 K M CI RA260U-K M; RA0D9N-K M UT DIIDW:2002577671 ER PT P PN US2002072252-A1; JP2002158173-A; CN1348200-A; KR2002019419-A TI Thin film production for semiconductor devices, involves irradiating raw thin film containing volatile gas with excimer laser beam having preset pulse width, to remove volatile gas from raw thin film. AU NAKAJIMA H NEGORO Y USUI S AE NAKAJIMA H (NAKA-Individual) NEGORO Y (NEGO-Individual) USUI S (USUI-Individual) SONY CORP (SONY-C) SONY CORP (SONY-C) GA 2002557092 AB NOVELTY - A raw thin film containing a volatile gas, is irradiated with an excimer laser beam having a pulse width of 60 ns or more, to remove the volatile gas from the raw thin film and a thin film is obtained. USE - For production of thin film, particularly semiconductor thin film for semiconductor devices (claimed). ADVANTAGE - The production method effectively reduces the content of volatile gas such as hydrogen in the thin film. The degassed thin film is recrystallized in a short time without breaking by irradiation of laser beam, particularly during multi- stage irradiation. Uniform heating leads to uniform degassing or removal of volatile gas such as hydrogen from the thin film. The amorphous silicon film is prevented from exploding, by effective degassing which precedes crystallization. The high quality crystalline semiconductor thin film with high productivity and semiconductor devices, are efficiently produced. DETAILED DESCRIPTION - The raw thin film containing volatile gas is a semiconductor thin film. The semiconductor thin film contains amorphous silicon film or polycrystalline silicon film. The film contains volatile gas as atoms which are selected from atom of hydrogen, helium, argon, neon, krypton and xenon. The excimer laser is selected from argon, krypton, xenon, fluorine, chlorine, krypton fluoride, krypton chloride, xenon chloride, xenon fluoride, xenon bromide, xenon iodide, argon fluoride, argon chloride, mercury chloride, mercury bromide, mercury iodide, mercury-cadmium, cadmium iodide, cadmium bromide, zinc iodide, sodium-xenon, xenon teluride, argon oxide, krypton oxide, xenon oxide, krypton sulfide, xenon sulfide, xenon selenide, magnesium (Mg2) and mercury (Hg2). INDEPENDENT CLAIMS are included for the following: (1) Semiconductor thin film; (2) Semiconductor device having semiconductor thin film formed on substrate; (3) Process for producing semiconductor thin film; and (4) Apparatus for producing semiconductor thin film. DESCRIPTION OF DRAWING(S) - The figure shows the sectional view illustrating the steps of degassing in an electric furnace. DC L03 (Electro-(in)organic, chemical features of electrical devices); U11 (Semiconductor Materials and Processes); U12 (Discrete Devices, e.g. LEDs, photovoltaic cells); V05 (Valves, Discharge Tubes and CRTs); V08 (Lasers and Masers) MC L04-C26; U11-C20; U12-A; V05-M; V08-B IP C23C-016/00; H01L-021/26; H01L-021/322; H01L-021/324; H01L-021/42; H01L-021/477; C23C-016/56; H01L-021/20; H01L-021/336; H01L-029/786; C23C-016/44; C23C-016/48; H01L-021/205 PD US2002072252-A1 13 Jun 2002 H01L-021/26 200259 Pages: 23 JP2002158173-A 31 May 2002 H01L-021/20 200259 Pages: 21 CN1348200-A 08 May 2002 H01L-021/20 200259 KR2002019419-A 12 Mar 2002 H01L-029/786 200262 AD US2002072252-A1 US946654 05 Sep 2001 JP2002158173-A JP268736 05 Sep 2001 CN1348200-A CN137983 05 Sep 2001 KR2002019419-A KR054335 05 Sep 2001 PI JP269216 05 Sep 2000 UT DIIDW:2002557092 ER PT P PN JP2002151776-A TI Vacuum-ultraviolet laser device e.g. fluorine molecular laser device has reflective mirror which amplifies and resonates light passed through etalon. AE GIGAPHOTON KK (GIGA-Non-standard) GA 2002476948 AB NOVELTY - A reflective mirror amplifies and resonates the light passed through an etalon which narrows the spectral bandwidth of light splitted by a beam splitter (17). USE - Vacuum-ultraviolet laser device such as fluorine molecular laser device, krypton fluoride (KrF) excimer laser device in aligner/exposure system for use during semiconductor device manufacture. ADVANTAGE - The wavefront aberration of light irradiated by etalon is canceled accurately. DESCRIPTION OF DRAWING(S) - The figure shows the flourine molecular laser device. (Drawing includes non-English language text). Beam splitter (17) DC V08 (Lasers and Masers) MC V08-A03 IP H01S-003/13; H01S-003/225 PD JP2002151776-A 24 May 2002 H01S-003/13 200251 Pages: 13 AD JP2002151776-A JP344668 13 Nov 2000 PI JP344668 13 Nov 2000 UT DIIDW:2002476948 ER PT P PN GB2364392-A; CN1330288-A; DE10131123-A1; JP2002082440-A; KR2002002877-A; US2002012873-A1; US6692891-B2; GB2364392-B; TW225967-B1; CN1241065-C; KR583095-B1; JP3875519-B2 TI Photoresist composition for producing semiconductor element, comprises photoresist resin, photoacid generator, photoradical generator and organic solvent. AU JUNG J LEE G S JUNG M H BAIK K H JUNG J C BAEK G H LEE G JUNG M BAIK K CHONG C LEE K CHONG M AE HYNIX SEMICONDUCTOR INC (HYNX-C) HYNIX SEMICONDUCTOR CO LTD (HYNX-C) HYNIX SEMICONDUCTOR INC (HYNX-C) HYUNDAI ELECTRONICS IND CO LTD (HYNX-C) HYNIX SEMICONDUCTOR INC (HYNX-C) JUNG J C (JUNG-Individual) LEE G S (LEEG-Individual) JUNG M H (JUNG-Individual) BAIK K H (BAIK-Individual) HYNIX SEMICONDUCTOR INC (HYNX-C) HAIRYOKSA SEMICONDUCTOR CO LTD (HAIR-Non-standard) GA 2002473547 AB NOVELTY - A photoresist composition comprises a photoresist resin, photoacid generator, photoradical generator and an organic solvent. USE - For producing semiconductor element. ADVANTAGE - The photo radical generator reduces or prevents formation of a sloping pattern due to a higher concentration of the generated acid in the upper portions of the composition relative to the lower portions. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (A) a process for forming a photoresist pattern comprising coating a photoresist composition on a substrate to form a photoresist film, exposing the photoresist film to light, and developing the exposed photoresist film; and (B) a semiconductor element manufactured from the above process. TF TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Materials: The photoradical generator is a compound of formula (I).R1 = H or 1-5C alkyl;R2 = H, 1-5C alkyl or phenyl;R3 = H, 1-5C alkyl, phenyl or 1-5C alkoxy.(I) is alpha,alpha-dimethoxy-alpha-phenylacetophenone or alpha-hydroxy-alpha,alpha-dimethylacetophenone.Preferred Composition: The photoacid generator is 0.05-10 wt.% of the photoresist resin. The photo radical generator is 10-300 mol.% of the photoacid generator. The organic solvent is 200-800 wt.% photoresist resin. TECHNOLOGY FOCUS - POLYMERS - Preferred Materials: The photoresist resin is chemically amplified photoresist polymer containing repeating units prepared by additional polymerization of cycloolefin comonomers. The photoresist polymer is poly(tert-butyl bicyclo(2.2.1)hept-5-ene-2-carboxylate/ 2-hydroxydthyl bicyclo(2.2.1)hept-5-ene-2-carboxylate/ norbornylene/ maleic anhydride) or poly(tert-butyl bicyclo(2.2.1)hept-5-ene-2-carboxylate/ 2-hydroxydthyl bicyclo(2.2.1)hept-5-ene-2-carboxylate/ bicyclo(2.2.1)hept-5-ene-2-carboxylic acid/ maleic anhydride). TECHNOLOGY FOCUS - CHEMICAL ENGINEERING - Preferred Process: The process includes baking step before and after the film exposure to light. The baking step is performed at 70-200 degreesC.Preferred Material: The light source is argon fluoride (ArF) (193 nm), krypton fluoride (KrF) (248 nm), vacuum ultraviolet (VUV) (157 nm), EUV (13 nm), E-beam, X-ray or ion beam. The exposure energy of the light is 1-100 mJ/cm2. SPECIFIC COMPOUNDS - The photoacid generator is diphenyl iodide hexafluorophosphate, diphenyl iodide hexafluoroarsenate, diphenyl iodide hexafluoroantimonate, diphenyl p-methoxyphenyl triflate, diphenyl p-toluenyl triflate, diphenyl p-isobutylophenyl triflate, diphenyl p-tert-butylphenyl triflate, triphenylsulfonium hexafluorophosphate, triphenylsulfonium triflate and dibutylnaphthylsulfonium triflate. The organic solvent is methyl 3-methoxypropionate, ethyl 3-ethoxypropionate, propylene glycol methyl ether acetate (PGMEA), cyclohexanone or 2-heptone. EXAMPLE - 160 G PGMEA were added with 20 g polymer of formula (II), 0.24 g of triphenylsulfonium triflate and 0.12 g of photo radical generator of formula (Ia). The resulting mixture was filtered through 0.2 mum filter to obtain a photoresist composition. The composition was spin-coated on silicon wafer and soft-baked at 140 degreesC for 90 seconds. After baking, the photoresist was exposed to light of ArF laser exposer, then post-baked at 140 degreesC for 90 seconds and developed in 2.38 wt.% aqueous tetra-methyl amino-hydroxide solution to obtain a 0.15 microns L/S vertical pattern. DC A89 (Photographic, laboratory equipment, optical); A14 (Other substituted mono-olefins, PVC, PTFE); E19 (Other organic compounds general - unknown structure, mixtures); G06 (Photosensitive compositions and bases, photographic processes); L03 (Electro-(in)organic, chemical features of electrical devices); P84 (Other photographic); U11 (Semiconductor Materials and Processes) MC A08-M08; A10-E05; A11-B05; A12-E07C; A12-L02B2; E10-A01; E10-A23B; E10-F02A2; G06-D06; G06-F03C; G06-F03D; G06-G17; G06-G18; L04-C05; U11-A06A IP G03F-007/004; G03F-007/039; C07C-049/82; C07C-049/84; H01L-021/027; G03F-007/38; G03F-007/038; G03F-007/26; G03F-007/40; G03F-007/32 PD GB2364392-A 23 Jan 2002 G03F-007/004 200251 Pages: 19 English CN1330288-A 09 Jan 2002 G03F-007/004 200251 Chinese DE10131123-A1 14 Feb 2002 G03F-007/039 200251 German JP2002082440-A 22 Mar 2002 G03F-007/039 200251 Pages: 10 Japanese KR2002002877-A 10 Jan 2002 G03F-007/039 200251 US2002012873-A1 31 Jan 2002 G03F-007/38 200251 English US6692891-B2 17 Feb 2004 G03F-007/038 200413 English GB2364392-B 18 Aug 2004 G03F-007/004 200455 English TW225967-B1 01 Jan 2005 G03F-007/004 200620 Chinese CN1241065-C 08 Feb 2006 G03F-007/004 200656 Chinese KR583095-B1 24 May 2006 G03F-007/039 200708 JP3875519-B2 31 Jan 2007 G03F-007/039 200711 Pages: 13 Japanese AD GB2364392-A GB014259 12 Jun 2001 CN1330288-A CN118895 29 Jun 2001 DE10131123-A1 DE1031123 28 Jun 2001 JP2002082440-A JP200816 02 Jul 2001 KR2002002877-A KR037228 30 Jun 2000 US2002012873-A1 US879325 12 Jun 2001 US6692891-B2 US879325 12 Jun 2001 TW225967-B1 TW115057 21 Jun 2001 CN1241065-C CN118895 29 Jun 2001 KR583095-B1 KR037228 30 Jun 2000 JP3875519-B2 JP200816 02 Jul 2001 FD KR583095-B1 Previous Publ. Patent KR2002002877 JP3875519-B2 Previous Publ. Patent JP2002082440 PI KR037228 30 Jun 2000 FS 430/270.1; 430/311; 430/325; 430/326; 430/327; 430/328; 430/914; 430/916; 430/921; 430/923; 430/925 CP GB2364392-A GB2354596-A HYUNDAI ELECTRONICS IND CO LTD (HYNX) JUNG J, KONG K, KIM J S, BAIK K JP11095435-A FUJI PHOTO FILM CO LTD (FUJF) JP11305433-A US6051368-A US6692891-B2 GB2320718-A HYUNDAI ELECTRONICS IND CO LTD (HYNX) JUNG J C, BOK C K, BAIK K H GB2347429-A HYUNDAI ELECTRONICS IND CO LTD (HYNX) JUNG J C, LEE G S, ROH C H, KONG K K, BAIK K GB2354596-A HYUNDAI ELECTRONICS IND CO LTD (HYNX) JUNG J, KONG K, KIM J S, BAIK K JP04349463-A JP11095435-A FUJI PHOTO FILM CO LTD (FUJF) JP11305433-A US4245029-A GENERAL ELECTRIC CO (GENE) CRIVELLO J V US4968582-A US5393642-A US6004721-A US6051368-A WO1997033198-A1 GB2364392-B GB2354596-A HYUNDAI ELECTRONICS IND CO LTD (HYNX) JUNG J, KONG K, KIM J S, BAIK K JP11095435-A FUJI PHOTO FILM CO LTD (FUJF) JP11305433-A US6051368-A JP3875519-B2 JP04245248-A JP04349463-A JP11295887-A CLARIANT JAPAN KK (CLRN) KINOSHITA Y, YAMAGUCHI Y, FUNATO S CR GB2364392-A Prog. Polym. Sci., Vol. 21, 1996, Elsevier Science Ltd,p1-45 US6692891-B2 Chemical Abstract 118: 244602-English abstract for JP 4-349463, Dec. 3, 1992.* Full English Translation of JP 4-349453 (Ban et al) which was published in Dec. 3, 1992.* J.V. Crivello et al, "Triarylsulfonium Salts Ans Photoinitiators of Free Radical and Cationic Polymerization", Journal of Polymer Science: Polymer Letters Edition, vol. 17, pp. 759-764, year only-1979.* Masamitsu Shirai etr al., "Photoacid and Photobase Generators: Chemistry and Applications to Polymeric Materials," pp. 1-45, Prog. Polym. Sci., vol. 21 (1996). Photonic Dictionary :Definition for word(s) vacuum ultraviolet (VUV) radiation at a laurin Web site, The Photonics Directory, copyright 1996-293, one page.* RN 210040-28-1, Registry, ACS, copyright 2003 from the STN database online, 2 pages.* STN database search for other names for "Darocur 1173".* United Kingdom Search Report dated Oct. 8, 2001. GB2364392-B Prog. Polym. Sci., Vol. 21, 1996, Elsevier Science Ltd,p1-45 DN 77859-0-0-0-K M; 71750-0-0-0-K M; 288638-0-1-0-K M; 208954-0-0-0-K M; 238308-0-0-0-K M; 238304-0-1-0-K M; 238309-0-1-0-K M; 238306-0-1-0-K M; 219321-0-0-0-K M; 208953-0-0-0-K M; 238314-0-0-0-K M; 203310-0-0-0-K M; 790-0-0-0-; 55505-0-0-0-; 131510-0-0-0-; 233-0-0-0- MN 006224501 K M CI R08660-K M; R05038-K M; RA1UCE-K M; RA06JZ-K M; RA0SP6-K M; RA0SP3-K M; RA0SP7-K M; RA0SP5-K M; RA0EAO-K M; RA06JY-K M; RA0SPA-K M; RA02A8-K M; R00843-; R01289-; R08574-; R00867- UT DIIDW:2002473547 ER PT P PN US6392792-B1; WO200271105-A2; AU2001297650-A1; AU2001297650-A8; WO200271105-A3 TI Reflection mode extreme ultraviolet diffraction element fabrication for optical system, involves depositing multilayer reflection film over relief profile in etch stack, such that film outer contour matches relief profile. AU NAULLEAU P P AE UNIV CALIFORNIA (REGC-C) UNIV CALIFORNIA (REGC-C) GA 2002470431 AB NOVELTY - A resist film is formed on etch stack (12). The patterned regions are exposed and developed to expose the underlying regions for etching to create relief profile. A multilayer reflection film (6) is deposited over the relief profile created in the stack, such that the film has an outer contour which matches the relief profile. USE - For fabricating extreme ultraviolet (EUV) diffraction element e.g. diffuser, kinoforms and phase grating for optical systems and special laser systems used for projection lithography for semiconductor device manufacture. ADVANTAGE - Avoids the difficulties involves in trying to directly pattern into the reflective EUV multilayer, thereby allowing the deposited multilayer to effectively smooth out high-frequency roughness which is presented on the patterned substrate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for extreme ultraviolet (EUV) device. DESCRIPTION OF DRAWING(S) - The figure shows the multilayer reflection stack matched to the wavelength. Multilayer reflection film (6) Etch stack (12) TF TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - The multilayer reflection film is formed of material selected from Mo-Si, W-C, Mo-Be, Ru-B4C, Mo2C-Si, Ti-C, V-C. DC P81 (Optics); U11 (Semiconductor Materials and Processes); V07 (Fibre-optics and Light Control); P84 (Other photographic) MC U11-C04; V07-F02 IP G02B-005/20; B29D-011/00; G02B-001/10; G02B-005/18; G02B-001/00; G03F-007/00 PD US6392792-B1 21 May 2002 G02B-005/20 200250 Pages: 7 English WO200271105-A2 12 Sep 2002 G02B-001/00 200270 English AU2001297650-A1 19 Sep 2002 G02B-005/18 200433 English AU2001297650-A8 13 Oct 2005 G02B-005/18 200611 English WO200271105-A3 13 Mar 2003 G02B-005/18 201206 English AD US6392792-B1 US730970 05 Dec 2000 WO200271105-A2 WOUS43058 13 Nov 2001 AU2001297650-A1 AU297650 13 Nov 2001 AU2001297650-A8 AU297650 13 Nov 2001 WO200271105-A3 WOUS43058 13 Nov 2001 FD AU2001297650-A1 Based on Patent WO200271105 AU2001297650-A8 Based on Patent WO200271105 PI US730970 05 Dec 2000 DS WO200271105-A2: (National): AE; AG; AL; AM; AT; AU; AZ; BA; BB; BG; BR; BY; BZ; CA; CH; CN; CO; CR; CU; CZ; DE; DK; DM; DZ; EC; EE; ES; FI; GB; GD; GE; GH; GM; HR; HU; ID; IL; IN; IS; JP; KE; KG; KP; KR; KZ; LC; LK; LR; LS; LT; LU; LV; MA; MD; MG; MK; MN; MW; MX; MZ; NO; NZ; OM; PH; PL; PT; RO; RU; SD; SE; SG; SI; SK; SL; TJ; TM; TR; TT; TZ; UA; UG; US; UZ; VN; YU; ZA; ZW (Regional): AT; BE; CH; CY; DE; DK; EA; ES; FI; FR; GB; GH; GM; GR; IE; IT; KE; LS; LU; MC; MW; MZ; NL; OA; PT; SD; SE; SL; SZ; TR; TZ; UG; ZW WO200271105-A3: (National): AE; AG; AL; AM; AT; AU; AZ; BA; BB; BG; BR; BY; BZ; CA; CH; CN; CO; CR; CU; CZ; DE; DK; DM; DZ; EC; EE; ES; FI; GB; GD; GE; GH; GM; HR; HU; ID; IL; IN; IS; JP; KE; KG; KP; KR; KZ; LC; LK; LR; LS; LT; LU; LV; MA; MD; MG; MK; MN; MW; MX; MZ; NO; NZ; OM; PH; PL; PT; RO; RU; SD; SE; SG; SI; SK; SL; TJ; TM; TR; TT; TZ; UA; UG; US; UZ; VN; YU; ZA; ZW (Regional): GH; GM; KE; LS; MW; MZ; SD; SL; SZ; TZ; UG; ZW; EA; AT; BE; CH; CY; DE; DK; ES; FI; FR; GB; GR; IE; IT; LU; MC; NL; PT; SE; TR; OA FS 216/2; 216/24; 216/26; 216/41; 216/47; 359/350; 359/359; 359/360; 359/366; 359/369; 359/565; 359/572; 359/576; 359/584; 359/585; 359/586; 359/900; 378/34; 378/35 CP US6392792-B1 JP06258510-A US3542453-A US4746192-A HITACHI LTD (HITA) MINAGAWA S US4895790-A MASSACHUSETTS INST TECHNOLOGY (MASI) SWANSON G J, VELDKAMP W B US4915463-A US DEPT ENERGY (USAT); UNIV CALIFORNIA (REGC) BARBEE T W US5257132-A US DEPT ENERGY (USAT) CEGLIO N M, HAWRYLUK A M, LONDON R A, SEPPALA L G US5422753-A XEROX CORP (XERO) HARRIS E D US5638212-A EASTMAN KODAK CO (EAST) MEYERS M M, SCHICKLER M E US5737125-A OLYMPUS OPTICAL CO LTD (OLYU) OHASHI H US5795684-A INTEL CORP (ITLC) TROCCOLO P M US5907436-A UNIV CALIFORNIA (REGC) SHORE B W, BRITTEN J A, NGUYEN H T, PERRY M D, BOYD R US5935733-A INTEL CORP (ITLC) SCOTT C R, TROCCOLO P M US5935737-A US5958629-A US5962174-A US6187211-B1 WO200271105-A2 EP1011028-A2 JP08015510-A JP08334610-A JP2000155207-A US5591678-A HE HOLDINGS INC (HUGA) FINNILA R M, BENDIK J J, MALLOY G T US5958605-A UNIV CALIFORNIA (REGC) MONTCALM C, STEARNS D G, VERNON S P CR WO200271105-A2 PATENT ABSTRACTS OF JAPAN vol. 1996, no. 05, 31 May 1996 (1996-05-31) -& JP 08 015510 A (NIKON CORP), 19 January 1996 (1996-01-19) PATENT ABSTRACTS OF JAPAN vol. 1997, no. 04, 30 April 1997 (1997-04-30) -& JP 08 334610 A (FURUKAWA ELECTRIC CO LTD:THE), 17 December 1996 (1996-12-17) PATENT ABSTRACTS OF JAPAN vol. 2000, no. 09, 13 October 2000 (2000-10-13) -& JP 2000 155207 A (CANON INC), 6 June 2000 (2000-06-06) PATENT ABSTRACTS OF JAPAN vol. 1996, no. 05, 31 May 1996 (1996-05-31) -& JP 08 015510 A (NIKON CORP), 19 January 1996 (1996-01-19) PATENT ABSTRACTS OF JAPAN vol. 1997, no. 04, 30 April 1997 (1997-04-30) -& JP 08 334610 A (FURUKAWA ELECTRIC CO LTD:THE), 17 December 1996 (1996-12-17) PATENT ABSTRACTS OF JAPAN vol. 2000, no. 09, 13 October 2000 (2000-10-13) -& JP 2000 155207 A (CANON INC), 6 June 2000 (2000-06-06) PATENT ABSTRACTS OF JAPAN vol. 2000, no. 09, 13 October 2000 (2000-10-13) -&JP 2000 155207 A (CANON INC), 6 June 2000 (2000-06-06) PATENT ABSTRACTS OF JAPAN vol. 1997, no. 04, 30 April 1997 (1997-04-30) -&JP 08 334610 A (FURUKAWA ELECTRIC CO LTD:THE), 17 December 1996 (1996-12-17) PATENT ABSTRACTS OF JAPAN vol. 1996, no. 05, 31 May 1996 (1996-05-31) -&JP 08 015510 A (NIKON CORP), 19 January 1996 (1996-01-19) UT DIIDW:2002470431 ER PT P PN EP1184723-A; EP1184723-A2; US2002058197-A1; JP2002148805-A; KR2002018609-A; US6770417-B2; TW227813-B1; KR756315-B1; JP4790153-B2 TI Negative resist composition for forming resist pattern useful for manufacturing electronic devices, e.g. metal oxide semiconductor transistor, includes constituent component having acetal-protected vinyl ether structure. AU NOZAKI K YANO E KOZAWA M AE FUJITSU LTD (FUIT-C) FUJITSU LTD (FUIT-C) GA 2002445922 AB NOVELTY - A negative resist composition comprises a constituent component which has an acetal-protected vinyl ether structure in its molecule. USE - The composition is used for forming a resist pattern useful for manufacturing electronic devices (claimed), e.g. metal oxide semiconductor transistor (MOS), and magnetic recording head. ADVANTAGE - The composition allows the use of an aqueous basic solution as the developer, and is capable of forming a hyperfine pattern, which has a sensitivity suited for practical use and is free from swelling. It can be exposed in the deep ultraviolet wavelength region as in the case of a krypton fluoride (KrF) or argon fluoride excimer laser, and also has excellent resistance to dry etching. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (A) a method for forming a resist pattern comprising applying the above-mentioned negative resist composition, and developing the exposed resist film with an aqueous basic solution; and (B) a method for manufacturing an electronic device, comprising selectively removing an underlying to-be-treated substrate using the resist pattern as a masking mechanism to form a predetermined functional element layer. DESCRIPTION OF DRAWING(S) - The figures show cross-sectional views of steps in manufacturing of the MOS transistor. TF TECHNOLOGY FOCUS - POLYMERS - Preferred Component: The constituent component having an acetal-protected vinyl ether structure is a film-forming polymer, which is soluble in an aqueous basic solution and has an alkali-soluble group. The acetal-protected vinyl ether structure is contained in the side chain of the film-forming polymer. The film-forming polymer is an alkali-soluble silicon-containing polymer. The film-forming polymer and a photo acid generator (PAG) capable of generating an acid that can react with the alkali-soluble group after the acetal-protected vinyl ether structure, produces a deacetalization when decomposed as a result of absorption of imaging radiation. The negative resist composition is soluble in an aqueous basic solution and the exposed portion becomes insoluble in an alkali after exposure.Preferred Property: The absorbance at a wavelength of an exposure light source is at most1.75/microns. TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The alkali-soluble group is phenol, carboxyl, N-hydroxyamide, oxime, imide, 1,1,1,3,3,3-hexafluorocarbinol group, or sulfonic acid group. The film-forming polymer is formed by polymerizing acrylic acid, methacrylic acid, itaconic acid, vinylbenzoic acid, norbornene, vinylphenol, styrene, or their derivatives. The film-forming polymer contains a weak alkali-soluble group, which is a lactone ring, an imide ring, or an acid anhydride. It contains a polycyclic alicyclic hydrocarbon moiety, which contains an adamanthyl group, a norbornyl group, or a bicyclo(2.2.2)octyl group. The moiety also includes an alkoxycarbonyl group and/or a ketone group. The acetal-protected vinyl ether structure has a partial structure of formula (I)-(III).X, Z = H, or arbitrary substituent;Y and R = arbitrary hydrocarbon group;n = 1-6.X may have an additional vinyl ether structure protected with an acetal and is capable of bonding the vinyl ether structure at an arbitrary position other than 1- and 2- positions, Z may also have an additional vinyl ether structure protected with an acetal.Preferred Composition: The composition contains solvents, which can be ethyl lactate, methyl amyl ketone, methyl-3-methoxypropionate, ethyl-3-ethoxypropionate, propylene glycol methyl ether acetate, methyl isobutyl ketone, and/or n-butyl ether. It may also contain a solvent which can be butyl acetate, gamma-butyrolactone, or propylene glycol methyl ether as an additive solvent. TECHNOLOGY FOCUS - ELECTRONICS - Preferred Method: The negative resist composition is applied to the substrate. The formed resist film is selectively exposed to an imaging radiation capable of provoking decomposition of a photo acid generator of the resist composition. The exposed resist film is developed with an aqueous basic solution to form a resist pattern. The treated substrate is selectively removed by etching using the resist pattern as a masking mechanism to form a predetermined functional element layer. The exposure step is carried out through a phase shift mask upon formation of the resist pattern. The resist film is exposed to an exposure light having a wavelength of at most210 nm. EXAMPLE - 6-Methoxy-2-tetrahydropyranylmethyl methacrylate/3-carboxyadamanthyl methacrylate copolymer (8.14 g) was dissolved in ethyl lactate, and produced a 15 wt.% solution. The solution also contained gamma-butyrolactone (10 wt.%) as an auxiliary solvent. Triphenylsulfonium trifluoromethane sulfonate (2 wt.%) was added to the solution and completely dissolved. After filtering the resist solution with 0.2microns Teflon membrane filter, it was spin coated in a silicon substrate treated with 1,1,1,3,3,3-hexamethyldisilazane (HMDS) and pre-baked at 110degreesC for 60 seconds to obtain a resist film of 0.4microns thick. After exposing the film with a KrF excimer laser stepper, it was baked at 120degreesC for 60 seconds. It was then developed with an aqueous 2.38% solution of tetramethylammonium hydroxide, and rinsed with deionized water. The film resolved a 0.25 microns line-and-space pattern at an exposure dose of 16 mJ/cm2. DC A89 (Photographic, laboratory equipment, optical); A18 (Addition polymers in general); G06 (Photosensitive compositions and bases, photographic processes); L03 (Electro-(in)organic, chemical features of electrical devices); P84 (Other photographic); U11 (Semiconductor Materials and Processes) MC A12-E07C; A12-L02B2; G06-D06; G06-F03C; G06-F03D; G06-G17; L04-C06B; U11-A06A IP G03F-007/075; G03F-007/04; C08F-220/28; G03F-007/038; G03F-007/20; H01L-021/027; G03F-007/004 PD EP1184723-A EP1184723-A2 06 Mar 2002 G03F-007/075 200248 Pages: 47 English US2002058197-A1 16 May 2002 G03F-007/04 200248 JP2002148805-A 22 May 2002 G03F-007/038 200249 Pages: 31 KR2002018609-A 08 Mar 2002 G03F-007/004 200262 US6770417-B2 03 Aug 2004 G03F-007/004 200451 TW227813-B1 11 Feb 2005 G03F-007/075 200625 Chinese KR756315-B1 07 Sep 2007 G03F-007/004 200839 JP4790153-B2 12 Oct 2011 G03F-007/038 201167 Pages: 53 Japanese AD EP1184723-A2 EP307380 30 Aug 2001 US2002058197-A1 US935832 24 Aug 2001 JP2002148805-A JP168630 04 Jun 2001 KR2002018609-A KR053313 31 Aug 2001 US6770417-B2 US935832 24 Aug 2001 TW227813-B1 TW121326 29 Aug 2001 KR756315-B1 KR053313 31 Aug 2001 JP4790153-B2 JP168630 04 Jun 2001 FD KR756315-B1 Previous Publ. Patent KR2002018609 JP4790153-B2 Previous Publ. Patent JP2002148805 PI JP266041 01 Sep 2000 JP168630 04 Jun 2001 DS EP1184723-A2: (Regional): AL; AT; BE; CH; CY; DE; DK; ES; FI; FR; GB; GR; IE; IT; LI; LT; LU; LV; MC; MK; NL; PT; RO; SE; SI; TR FS x; 430270.1; 430325; 430905 CP EP1184723-A JP11305436-A US5916995-A KUNHOSEOKYUI WAHAKUJUSHIKUHESA (KUNH-Non-standard) PARK J H, KIM S J, KIM J H, PAEK S US6027856-A EP1184723-A2 JP11305436-A US5916995-A KUNHOSEOKYUI WAHAKUJUSHIKUHESA (KUNH-Non-standard) PARK J H, KIM S J, KIM J H, PAEK S US6027856-A US6770417-B2 JP6027673-A TOSHIBA KK (TOKE) JP11305436-A JP11311860-A US5916995-A KUNHOSEOKYUI WAHAKUJUSHIKUHESA (KUNH-Non-standard) PARK J H, KIM S J, KIM J H, PAEK S US5998092-A CLARIANT INT LTD (CLRN) MCCULLOCH I, EAST A J, KANG M, KEOSIAN R, YOON H US6027856-A US6159653-A US2001053496-A1 SHIPLEY CO LLC (SHIL) ADAMS T G KR756315-B1 JP11002902-A NIPPON GOSEI GOMU KK (JAPS) IWANAGA S, TANABE T, KOBAYASHI H, OTA Y JP11305406-A JP11305436-A JP4790153-B2 JP9235326-A KOREA KUMHO PETROCHEMICAL CO LTD (KKPT) PARK J, KIM S, PARK S, KIM J JP10182537-A KUNHOSEOKYUI WAHAKUJUSHIKUHESA (KUNH-Non-standard) PARK J H, KIM S J, KIM J H, PAEK S JP11305436-A JP2000162772-A HYUNDAI ELECTRONICS IND CO LTD (HYNX) JP2000181064-A JP2000231191-A HYUNDAI ELECTRONICS IND CO LTD (HYNX) JUNG J C, KO K, KIN C, BAIK K H JP2000239436-A CR EP1184723-A PATENT ABSTRACTS OF JAPAN vol. 2000, no. 02, 29 February 2000 (2000-02-29) -& JP 11 305436 A (FUJITSU LTD), 5 November 1999 (1999-11-05) EP1184723-A2 PATENT ABSTRACTS OF JAPAN vol. 2000, no. 02, 29 February 2000 (2000-02-29) -& JP 11 305436 A (FUJITSU LTD), 5 November 1999 (1999-11-05) DN 1911-0-0-0-; 10151-0-0-0-; 7490-0-0-0-; 368-0-0-0-; 55505-0-0-0-; 31-0-0-0-; 786-0-0-0-; 131510-0-0-0-; 780-0-0-0-; 192-0-0-0- CI R00446-; R00460-; R00654-; R00708-; R01289-; R01135-; R00836-; R08574-; R00644-; R00426- UT DIIDW:2002445922 ER PT P PN JP2002053612-A; KR2001114070-A; US2002061461-A1; GB2363798-A; GB2363798-B; US6770415-B2; TW576951-A; KR527533-B TI New photoresist polymer used for photoresist pattern formation during fabrication of semiconductor components by top surface imaging process. AU LEE G S KOH C W JUNG J C JUNG M H BAIK K H BAEK G H KO C W JUNG J BAIK K CHUNG J C CHUNG M H AE HYUNDAI ELECTRONICS IND CO LTD (HYNX-C) HYNIX SEMICONDUCTOR INC (HYNX-C) LEE G S (LEEG-Individual) KOH C W (KOHC-Individual) JUNG J C (JUNG-Individual) JUNG M H (JUNG-Individual) BAIK K H (BAIK-Individual) HYNIX SEMICONDUCTOR INC (HYNX-C) HYNIX SEMICONDUCTOR INC (HYNX-C) GA 2002429752 AB NOVELTY - Photoresist polymer (I) for photoresist pattern formation, is new. USE - For producing semiconductor components by pattern formation using top surface imaging processes. ADVANTAGE - The protective group selectively detaches on exposure, and a hydroxyl group is formed that reacts with silylating agent during silylation. On etching by oxygen plasma after silylation only exposed portion remains and desired negative pattern is formed. The photoresist composition excels in resolving power, adhesive property with respect to substrate and resists falling of pattern during fine patterning. DETAILED DESCRIPTION - Photoresist polymer (I) for photoresist pattern formation, is new. Y = 1-10C alkylene or alkylene containing an ether group; R = sensitive protecting group to an acid; n = 0-2; a:b:c:d:e:f = 20-40:0-20:20-70:0-30:0-20:0-20 (in mol.%); and X1 and X2 = CH2, CH2-CH2, O, or S . INDEPENDENT CLAIMS are also included for the following: (i) Manufacture of photoresist polymer of formula (I) which involves polymerizing maleic anhydride and compound of formula (V) to obtain a polymer of formula (II), reacting polymer (II) with diol of formula (IV) to obtain polymer of formula (III), and reacting polymer (III) with compound having sensitive protecting group to an acid; x:y = 20-40:60-80(in mole percent); a:b:c:e:f = 20-40:0-20:20-80:0-20:0-20 (in mole percent) . (ii) Photo resist composition comprising photoresist polymer, photoacid generator and organic solvent; (iii) Photo resist pattern formation which involves applying photoresist composition on substrate to form photoresist film, exposing photoresist film with a light source, silylating exposed portions using silylating agent to form silylated film, dry developing front surface of film, forming oxide film pattern and etching mask; and (iv) For semiconductor components. DESCRIPTION OF DRAWING(S) - The figure shows the top surface imaging process. (Drawing includes non-English language text). TF TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Solvent: The solvent used for polymerization is chosen from tetra hydrofuran, dimethyl formamide, dimethyl sulfoxide, dioxane, benzene, xylene and toluene. The solvent used for photo resist composition is ethyl-3-ethoxy propionate, methyl-3-methoxy propionate, cyclohexanone, propylene glycol methylether acetate, n-heptanone or ethyl lactate. Preferred Compounds: The compound having protective group is compound having t-butyl carboxylate, 1-20C alkyl, aryl or aryl vinyl ether group. The photo acid generator is chosen from phthalamide trifluoromethane sulfonate (phthalimidotrifluoromethanesulfonate), dinitro benzyl tosylate (dinitrobenzyltosylate), n-decyl disulfone (n-decyldisulfone), and the naphthyl imide trifluoromethane sulfonate (naphthylimidotrifluoromethanesulfonate), diphenyl iodo salt of hexafluoro phosphate, diphenyl iodo salt of hexafluoro arsenate, diphenyl iodo salt of hexafluoro antimonate, diphenyl para methoxyphenyl triflate, diphenyl paratoluenyltriflate, diphenyl para isobutyl phenyl triflate, triphenyl sulfonium hexafluoro arsenate, triphenyl sulfonium hexfluoro antimonate, a triphenyl sulfonium triflate, and dibutyl naphthyl sulfonium triflate. Preferred Composition: The photoresist composition contains 0.1-10 weight% (wt.%) of photo acid generator and 300-1500 wt.% of organic solvent based on photoresist polymer. TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Process: The substrate is treated with hexamethyldisilazane before formation of photoresist film, and baked at 70-200degreesC before and/or after exposure to light source. The exposure is performed using argon fluoride, krypton fluoride, extreme ultraviolet, vacuum ultraviolet, energy-beam, X-ray or ion beam. The photoresist film is exposed to light energy of 1-50 mJ/cm2. Preferred silylating agent: The silylating agent is hexamethyldisilazane, tetramethyl disilazane, bis(dimethylamino) dimethylsilane, bis(dimethylamino) methylsilane, dimethyl silyl dimethylamine, dimethyl silyl diethylamine, trimethylsilyl dimethyl amine, trimethyl silyl diethyl amine, and dimethylamino pentamethyl disilane. Preferred Definitions: n = 0; X1 = CH2; Y = CH2CH2 or CH2CH2OCH2CH2; EXAMPLE - Maleic anhydride and azobis isobutyronitrile were added to tetrahydrofuran, and reacted for 24 hours at 60degreesC. The polymeric precipitate was filtered from the reaction mixture, and poly (norbornene/maleic anhydride) of formula (II) was obtained in an yield of 65%. The polymer (II), was dissolved in sulfuric acid and reacted with anhydrous ethylene glycol for 10 hours at 150degreesC. The resulting solution was cooled, added with water, esterified and poly (norbornene/dihydroxyethylfumarate) of formula (III) was obtained in yield of 97%. A photoresist composition was prepared by dissolving 10 g of poly (norbornene/dihydroxyethylfumarate), 0.06 g of phthalimide trifluoromethane sulfonate and 0.06 g of triphenyl sulfonium triflate in 100 g of propylene glycol methylethyl acetate. The composition was applied on etched silicon wafer and photoresist thin film was obtained. The photoresist thin film was baked for 90 seconds at 130degreesC, exposed to argon fluoride laser for 90 seconds at 130degreesC and developed using TMAH solution. DC A89 (Photographic, laboratory equipment, optical); G06 (Photosensitive compositions and bases, photographic processes); L03 (Electro-(in)organic, chemical features of electrical devices); P84 (Other photographic); U11 (Semiconductor Materials and Processes) MC A04-A; A04-F05; A04-F11; A04-G; A10-E01; A12-E07C; A12-L02B2; G06-D06; G06-F03C; L04-C05; U11-A06A; U11-C04A1B; U11-C04E1 IP C08F-008/14; C08F-222/06; C08K-005/00; C08L-035/00; G03F-007/039; G03F-007/38; H01L-021/027; G03F-007/031; G03F-007/075; G03F-007/038; G03F-007/20; G03F-007/40; C08F-232/08; G03F-007/022 PD JP2002053612-A 19 Feb 2002 C08F-008/14 200246 Pages: 14 Japanese KR2001114070-A 29 Dec 2001 G03F-007/031 200246 US2002061461-A1 23 May 2002 G03F-007/038 200246 English GB2363798-A 09 Jan 2002 C08F-008/14 200248 Pages: 20 English GB2363798-B 02 Jun 2004 C08F-008/14 200436 English US6770415-B2 03 Aug 2004 G03F-007/038 200451 English TW576951-A 21 Feb 2004 G03F-007/022 200455 Chinese KR527533-B 09 Nov 2005 G03F-007/031 200682 AD JP2002053612-A JP188342 21 Jun 2001 KR2001114070-A KR034103 21 Jun 2000 US2002061461-A1 US884313 19 Jun 2001 GB2363798-A GB015021 19 Jun 2001 GB2363798-B GB015021 19 Jun 2001 US6770415-B2 US884313 19 Jun 2001 TW576951-A TW114935 20 Jun 2001 KR527533-B KR034103 21 Jun 2000 FD KR527533-B Previous Publ. Patent KR2001114070 PI KR034103 21 Jun 2000 FS 430/270.1; 430/296; 430/311; 430/330; 430/905; 430/909; 430/910 CP GB2363798-A EP989458-A2 KOREA KUMHO PETROCHEMICAL CO LTD (KKPT) PARK J, SEO D, PARK S, KIM S GB2340831-A HYUNDAI ELECTRONICS IND CO LTD (HYNX) LEE G S, KOH C W, JUNG J C, JUNG M H, BAIK K H GB2345285-A HYUNDAI ELECTRONICS IND CO LTD (HYNX) LEE G S, KOH C W, JUNG J C, JUNG M H, BAIK K H JP2000080124-A GB2363798-B EP989458-A2 KOREA KUMHO PETROCHEMICAL CO LTD (KKPT) PARK J, SEO D, PARK S, KIM S GB2340831-A HYUNDAI ELECTRONICS IND CO LTD (HYNX) LEE G S, KOH C W, JUNG J C, JUNG M H, BAIK K H GB2345285-A HYUNDAI ELECTRONICS IND CO LTD (HYNX) LEE G S, KOH C W, JUNG J C, JUNG M H, BAIK K H JP2000080124-A US6770415-B2 EP989458-A2 KOREA KUMHO PETROCHEMICAL CO LTD (KKPT) PARK J, SEO D, PARK S, KIM S GB2340831-A HYUNDAI ELECTRONICS IND CO LTD (HYNX) LEE G S, KOH C W, JUNG J C, JUNG M H, BAIK K H GB2345285-A HYUNDAI ELECTRONICS IND CO LTD (HYNX) LEE G S, KOH C W, JUNG J C, JUNG M H, BAIK K H JP2000080124-A US6159655-A FUJI PHOTO FILM CO LTD (FUJF) SATO K US20020018960-A1 US6303725-B1 IND TECHNOLOGY RES INST (ITRI); EVERLIGHT CHEM IND CORP (EVER-Non-standard) CHANG S, CHEN J, HO B, LIU T, LIN T CR US6770415-B2 United Kingdom Search Report dated Sep. 25, 2001. DN 790-0-0-0-; 425-0-0-0-; 19-0-0-0-; 23-0-0-0-; 25-0-0-0-; 30-0-0-0-; 8-0-0-0-; 26-0-0-0-; 233-0-0-0-; 131510-0-0-0- CI R00843-; R04617-; R00895-; R00278-; R00274-; R01057-; R00306-; R00862-; R00867-; R08574- UT DIIDW:2002429752 ER PT P PN US2002012866-A1; JP2002207294-A; US6692883-B2; JP4177970-B2 TI Positive photoresist composition for use in production of semiconductor integrated circuit device, comprises specific resins having structural units containing acid decomposable groups. AU NISHIYAMA F FUJIMORI T TAN S AE NISHIYAMA F (NISH-Individual) FUJIMORI T (FUJI-Individual) TAN S (TANS-Individual) FUJI PHOTO FILM CO LTD (FUJF-C) FUJI PHOTO FILM CO LTD (FUJF-C) FUJI FILM CORP (FUJF-C) GA 2002338218 AB NOVELTY - A positive photoresist composition comprises resins (A,B) having structural units containing groups (X,Y), respectively, and capable of decomposing under the action of an acid to increase the solubility in an alkali developer, and a compound capable of generating an acid upon irradiation with actinic rays or radiation. USE - For use in the production of a semiconductor integrated circuit device, a mask for the production of an integrated circuit, a printed board, a liquid crystal panel, etc. ADVANTAGE - The chemical amplification-type positive photoresist composition is free of occurrence of shortening of a line pattern edge part in the longitudinal direction. DETAILED DESCRIPTION - A positive photoresist composition comprises a resin (A,B) having structural units containing groups (X,Y), respectively and capable of decomposing under the action of an acid to increase the solubility in an alkali developer, and a compound capable of generating an acid upon irradiation with actinic rays or radiation. R1, R2 = H, optionally substituted linear, branched or cyclic alkyl; m = 1-20; Z = (Z-I) or (Z-II); R3 = optionally substituted linear, branched or cyclic alkyl, optionally substituted aryl, optionally substituted aralkyl; n = 0-5; and R4 = 1-4C lower alkyl. DESCRIPTION OF DRAWING(S) - The figure shows the explanatory drawing of shortening of line pattern edge part formed using the positive photoresist composition. TF TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The positive photoresist composition comprises resins (A',B') having structural units (I), (II) and (III), and (IV), (V) and (VI), respectively and capable of decomposing under the action of an acid to increase the solubility in an alkali developer, and compound capable of generating an acid upon irradiation with actinic rays or radiation.R5 = acid-stable group;W = (X);x, y, x', y' = 1-100;R6 = H or methyl;R7 = optionally substituted linear, branched or cyclic alkyl, optionally substituted aryl or aralkyl; andW' = (Y).z and z' are 0-100, when x+y+z = 100 and x'+y'+z' = 100, respectively.The positive photoresist composition contains 0.001-40 wt.% of the compound capable of generating an acid upon irradiation with actinic rays or radiation, which is a mixture of a compound having sulfonium salt structure and a compound having a diazodisulfone structure.The resins (A,B) each has a weight average molecular weight of 3000-200000. Contents of resins (A,B) in the positive photoresist composition are each 50-99 wt.%.The weight ratio of content of resin (A) to total content of resin (A,B), is 0.1-0.9.The photoresist composition also comprises a nitrogen-containing cyclic compound (F) or a nitrogen-containing basic compound having two or more nitrogen atoms different in the chemical environment within one molecule, and a surfactant.Y,Z = optionally substituted linear, branched or cyclic alkylene which may contain a heteroatom. EXAMPLE - 1800 g of VP15000 (RTM), and 8200 g of propylene glycol monomethyl ether acetate (PGMEA) were dissolved. Water and PGMEA were azeotropically distilled off. A solution obtained by 9 g of pyridinium-p-toluene sulfonate to 576.2 g of cyclohexane ethanol, was added to the reaction solution, and 450.2 g of t-butyl vinyl ether was added. 142.2 g of piperidine and 153.2 g of acetic anhydride were added and the resulting solution was stirred at room temperature. Water and ethyl acetate were added to the reaction solution after liquid separation and water washing. Ethyl acetate, water and PGMEA were removed by distillation under reduced pressure, to obtain alkali-soluble resin (A'-1). 100 g of VP15000 (RTM), and 400 g of PGMEA were dissolved. Water and PGMEA were azeotropically distilled off. 25 g of ethyl vinyl ether and 0.02 g of p-toluene sulfonic acid were added and resulting solution was stirred at room temperature for 1 hour. 0.03 g of triethyl amine was added to the reaction solution to stop the reaction, followed by addition of 400 ml of water and 800 ml of ethyl acetate. After liquid separation and water washing, ethyl acetate, water and PGMEA were removed by distillation under reduced pressure to obtain alkali-soluble resin (B'-1). 96.25 parts wt. of alkali soluble resins (A'-1, B'-1) in a weight ratio of 7/3, 3.5 parts wt. of photo-acid generators (PAG 4-4) and (PAG 7-3) in a weight ratio of 2/8, 0.25 parts wt. of organic base (E-1), and 200 ppm of surfactant Troysol S-366 (RTM) were dissolved in PGMEA solvent, to obtain a chemical amplification-type positive photoresist composition. The composition was coated on a silicon wafer having a 70 nm film of organic BARC DUV-42 (RTM) and dried at 120 degrees C for 90 seconds, to form a resist film of 0.83 micro m. Krypton-fluoride excimer laser was irradiated to expose the resist film. After the exposure, the film was heat treated at 100 degrees C for 90 seconds, developed with 2.38% of an aqueous solution of tetramethylammonium hydroxy solution, rinsed with pure water and spin-dried to obtain a resin pattern. The resist pattern was transferred on the substrate and was composed of five lines having a periodicity with a ratio between 0.30 micro m line width and space width being 1:1, where the length of each line was 1.8 micro m. Shortening was evaluated by examining third line from right to left side and undertaking the central line out of five lines. First, the exposure amount necessary for reproducing a ratio between line width and the space width of five lines was determined and the length in the longitudinal direction of the third line from the left or right side at that exposure amount was measured using a length measuring machine. The shrinkage in the longitudinal direction was determined as the shortening. Shortening was found to be 6%, and the composition was improved in the shortening at the line pattern edge part in the longitudinal direction. DC A89 (Photographic, laboratory equipment, optical); G06 (Photosensitive compositions and bases, photographic processes); L03 (Electro-(in)organic, chemical features of electrical devices); P84 (Other photographic); U11 (Semiconductor Materials and Processes) MC A08-M08; A10-E02; A12-E01; A12-L02B2; G06-D06; G06-F03C; G06-F03D; L04-C05; U11-A06A IP G03F-007/04; G03F-007/39; C08K-005/00; C08L-101/06; G03F-007/004; G03F-007/039; H01L-021/027; H01L-021/02 PD US2002012866-A1 31 Jan 2002 G03F-007/04 200237 Pages: 52 JP2002207294-A 26 Jul 2002 G03F-007/039 200264 Pages: 57 US6692883-B2 17 Feb 2004 G03F-007/004 200413 JP4177970-B2 05 Nov 2008 G03F-007/039 200880 Pages: 83 AD US2002012866-A1 US838257 20 Apr 2001 JP2002207294-A JP112875 11 Apr 2001 US6692883-B2 US838257 20 Apr 2001 JP4177970-B2 JP112875 11 Apr 2001 FD JP4177970-B2 Previous Publ. Patent JP2002207294 PI JP121159 21 Apr 2000 JP339205 07 Nov 2000 US838257 20 Apr 2001 FS 430170; 430270.1; 430905 CP US6692883-B2 EP29139-A US4491628-A IBM CORP (IBMC) ITO H, WILLSON C G, FRECHET J M J US5558971-A WAKO PURE CHEM IND LTD (WAKP); MATSUSHITA ELEC IND CO LTD (MATU) FUMIYOSHI U, TAKAAKI N, KATSUYAMA A, ENDO M US5962180-A JAPAN SYNTHETIC RUBBER CO LTD (JAPS) IWANAGA S, SAKURAI A, TANABE T, TSUJI A US6207343-B1 US6210859-B1 US6265135-B1 FUJI PHOTO FILM CO LTD (FUJF) US6376152-B2 US6485883-B2 FUJI PHOTO FILM CO LTD (FUJF) KODAMA K, KANNA S, AOSO T US2001004130-A1 HIGASHI M (HIGA-Individual); MURAYAMA K (MURA-Individual); SAKAGUCHI H (SAKA-Individual); KOIKE H (KOIK-Individual) HIGASHI M, MURAYAMA K, SAKAGUCHI H, KOIKE H US2002001590-A1 MOUNT SINAI HOSPITAL (MOUN) KELLY M, MCGEER A, WILLEY B M JP4177970-B2 JP2000001469-A NIPPON GOSEI GOMU KK (JAPS) KOBAYASHI H, YOKOYAMA K, O I, IWANAGA S UT DIIDW:2002338218 ER PT P PN JP2001284217-A TI Exposure system for semiconductor device manufacture, has projection optical system which forms mask pattern on photosensitive substrate, by irradiating ultraviolet rays, and contains inert gas which is ionized. AU FURUTOKU K AE CANON KK (CANO-C) GA 2002318889 AB NOVELTY - The exposure system (1) consists of a projection optical system (7) which forms a mask pattern on a photosensitive substrate, by irradiating ultraviolet rays. The interior of the exposure system is substituted by inert gas such as nitrogen, helium and/or argon, which is ionized. The light source of ultraviolet rays is an argon fluoride excimer laser. USE - For manufacture of semiconductor device (claimed). ADVANTAGE - Highly precise exposure and fine circuit pattern are attained. The inert gas in the exposure system is ionized effectively. Removal of static from the wafer and reticle, is performed effectively. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following: (a) Manufacture of semiconductor device; (b) Manufacturing apparatus of semiconductor device; (c) Maintenance method of the exposure system DESCRIPTION OF DRAWING(S) - The figure shows the schematic block diagram of the projection exposure device. Exposure system (1) Optical system (7) DC P84 (Other photographic); U11 (Semiconductor Materials and Processes) MC U11-C04E1 IP H01L-021/027; G03F-007/20 PD JP2001284217-A 12 Oct 2001 H01L-021/027 200236 Pages: 10 Japanese AD JP2001284217-A JP094373 30 Mar 2000 PI JP094373 30 Mar 2000 UT DIIDW:2002318889 ER PT P PN US2002001957-A1; JP2002023390-A; KR2002001338-A; US6465356-B2; KR463237-B; TW269368-B1; JP4818524-B2 TI Formation of fine photoresist patterns in semiconductor device production involves using oxygen radicals to decrease the line width of the patterns. AU KIM G PARK S KIM G H PARK S S AE KIM G (KIMG-Individual) PARK S (PARK-Individual) HYUNDAI ELECTRONICS IND CO LTD (HYNX-C) HYNIX SEMICONDUCTOR INC (HYNX-C) HYUNDAI ELECTRONICS IND CO LTD (HYNX-C) HYNIX SEMICONDUCTOR INC (HYNX-C) HYUNDAI ELECTRONICS IND CO LTD (HYNX-C) GA 2002291147 AB NOVELTY - Photoresist patterns comprising a negative or positive photoresist layer are formed over a semiconductor substrate using a stepper. The line width of the patterns is decreased by ashing the patterns using oxygen radicals formed by thermal decomposition of ozone gas using ultraviolet radiation in an ozone asher having ozone concentration of 5-7 volume %. USE - In semiconductor device manufacture for forming photoresist patterns of a fine line. ADVANTAGE - Fine line widths of 0.1 microns or less can be formed. DETAILED DESCRIPTION - Preferred Features: Ashing is carried out at atmospheric pressure. Thermal decomposition of ozone gas is effected at 130-200 degrees C in the ozone asher, and the substrate is heated on a supporting heater block. The stepper is preferably Kr-Excimer laser stepper. A light source of the stepper is selected from g-line (436 nm), i-line (365 nm) and ArF (193 nm). An INDEPENDENT CLAIM is given for a semiconductor device made in accordance with the described method. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the use of the ozone asher in order to form fine photoresist patterns according to the invention. Semiconductor substrate (21) Photoresist patterns (24) Wafer heating block (25) DC L03 (Electro-(in)organic, chemical features of electrical devices); U11 (Semiconductor Materials and Processes); P84 (Other photographic); P83 (Photographic processes, compositions) MC L04-C06B; U11-C04A1D IP H01L-021/311; G03F-007/40; H01L-021/027; H01L-021/3065; G03F-001/08; G03C-005/00 PD US2002001957-A1 03 Jan 2002 H01L-021/311 200233 Pages: 9 English JP2002023390-A 23 Jan 2002 G03F-007/40 200233 Pages: 6 Japanese KR2002001338-A 09 Jan 2002 G03F-001/08 200245 US6465356-B2 15 Oct 2002 H01L-021/311 200271 English KR463237-B 23 Dec 2004 G03F-001/08 200528 TW269368-B1 21 Dec 2006 G03F-001/08 200809 Chinese JP4818524-B2 16 Nov 2011 G03F-001/08 201175 Pages: 8 Japanese AD US2002001957-A1 US894155 27 Jun 2001 JP2002023390-A JP074870 15 Mar 2001 KR2002001338-A KR035969 28 Jun 2000 US6465356-B2 US894155 27 Jun 2001 KR463237-B KR035969 28 Jun 2000 TW269368-B1 TW115305 22 Jun 2001 JP4818524-B2 JP074870 15 Mar 2001 FD KR463237-B Previous Publ. Patent KR2002001338 JP4818524-B2 Previous Publ. Patent JP2002023390 PI KR035969 28 Jun 2000 US894155 27 Jun 2001 FS 430/296; 430/313; 430/314; 430/316; 430/323; 430/325; 430/328; 430/329; 430/330; 430/394; 430/942; 438/3; 438/694; 438/708 CP US6465356-B2 US4806456-A US5876901-A US20010005038-A1 US6316169-B1 JP4818524-B2 JP05267156-A JP11297951-A JP2001085407-A JP2001255670-A JP2002231608-A CR US6465356-B2 Ghandi, Sorab,; "VLSI Fabrication Principles-Silicon and Galium Arsenide"; 1994 by John Wiley & Sons Inc.; Second Edition; pp. 664-669, 673-676 and 685-687. UT DIIDW:2002291147 ER PT P PN EP1167349-A1; CN1330289-A; US2002015913-A1; JP2002116546-A; KR2002001557-A; US6548220-B2; EP1167349-B1; DE60107491-E; DE60107491-T2; CN1229693-C; TW286664-B1; KR799943-B1; JP4529316-B2; SG166668-A1 TI Chemical amplifying type positive resist composition for semiconductor fine processing, comprises acid generator containing sulfonium salt and onium salt(s) including triphenylsulfonium and diphenyliodonium salt. AU UETANI Y KAMABUCHI A OOHASHI K KAMIYA Y OHASHI K KAMAFUCHI K AE SUMITOMO CHEM CO LTD (SUMO-C) SUMITOMO CHEM CO LTD (SUMO-C) UETANI Y (UETA-Individual) OOHASHI K (OOHA-Individual) KAMABUCHI A (KAMA-Individual) SUMITOMO CHEM CO LTD (SUMO-C) SUMITOMO CHEM CO LTD (SUMO-C) GA 2002229777 AB NOVELTY - A chemical amplifying type positive resist composition comprises an acid generator consisting of a sulfonium salt and onium salt(s) including triphenylsulfonium and diphenyliodonium salt. USE - For semiconductor fine processing e.g. excimer laser lithography using argon-fluoride (ArF) or krypton-fluoride excimer laser. ADVANTAGE - The acid generator combination provides resist pattern with improved line edge roughness and excellent dry etching resistance, sensitivity, and resolution. DETAILED DESCRIPTION - A chemical amplifying type positive resist composition comprises an acid generator consisting of a sulfonium salt of formula (I) and onium salt(s) including triphenylsulfonium salt of formula (IIa) and diphenyliodonium salt of formula (IIb); and a resin having a polymerization unit with a group that is unstable to acid. The resin is soluble or slightly soluble in alkali, and becomes alkali-soluble by action of an acid. Q1, Q2 = 1-6C alkyl, 3-10C cycloalkyl, or together with S form heteroalicyclic group optionally containing O or S; Q3 = H; and Q4 = 1-6C alkyl or 3-10C cycloalkyl; Q3, Q4 = 2-oxocycloalkyl when together with adjacent CHC(O); Q5SO3-, P6SO3-, P7SO3- = organosulfonate ion; P1-P5 = H, OH, 1-6C alkyl, or 1-6C alkoxy. When Q5 is 1-8C perfluoroalkyl, Q1 is 1-6C alkyl; Q2 is 1-6C alkyl or 3-10C cycloalkyl; and Q3 and Q4 form 2-oxocycloalkyl. An INDEPENDENT CLAIM is also included for a sulfonium salt of formula (Ia). Q6 = 1-8C perfluoroalkyl, 1-8C alkyl, 6-12C aromatic group, or camphor group. When Q6 is 1-8C perfluoroalkyl, Q1 and Q2 is 1-6C alkyl or 3-10C cycloalkyl, or form (together with S) a heteroalicyclic group that may contain O or S; Q3 is H; and Q4 1-6C alkyl or 3-10C cycloalkyl. When Q6 is 1-8C alkyl, 6-12C aromatic group, or camphor group, Q1 and Q2 can form 2-oxocycloalkyl group, together with their adjacent CHC(O) group. TF TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The weight ratio of the sulfonium to onium salt is 9:1 - 1:9. The composition includes an amine as quencher. Preferred Unit: The polymerization unit having acid-unstable group includes (meth)acrylic acid 2-alkyl-2-adamantyl or (meth)acrylic acid 1-adamantyl-1-alkyylalkyl. TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The resin contains 10-80 mol% polymerization units having acid-unstable group.Preferred Resin: The resin contains polymerization unit(s) of p-hydroxystyrene; m-hydroxystyrene; (meth)acrylic acid 3-hydroxy-1-adamantyl; (meth)acrylic acid 3,5-hydroxy-1-adamantyl; (meth)acryloyloxy-gamma-butyrolactone, where the lactone may be substituted by alkyl; or alicyclic lactone of formula (IIIa), or (IIIb). The resin further contains polymerization units of 2-norbornene and aliphatic unsaturated dicarboxylic acid anhydride.R1, R2 = H or Me;andn = 1-3. Preferred Definitions: Q1, Q2 = heteroalicyclic group;and Q5, P6, P7 = 1-8C perfluoroalkyl, 1-8C alkyl, 6-12C aromatic group, or camphor group. EXAMPLE - A copolymer resin (10 parts) obtained by adding methylisobutyl ketone and azobisisobutyronitrile to a mixture of 2-ethyl-2-adamantyl methacrylate, 3-hydroxy-1-adamantyl methacrylate, and alpha-methacryloyloxy-gamma-butyrolactone, was mixed with 3,3-dimethyl-2-oxobutyl thiacyclopentanium trifluoromethane sulfonate (0.5 part), 4-methylphenyldiphenylsulfonium perfluorooctanesulfonate (0.2 part), and 2,6-diisopropylaniline (0.015 part). The resultant solution was applied to silicon wafer, pre-baked, irradiated with ArF excimer stepper, and post-baked. The developed pattern had an effective sensitivity of 48 mJ/cm2, resolution of 0.16 microns, transmission of 68%, and smooth line edges. A pattern produced using 4-methylphenyldiphenylsulfonium perfluoroactanesulfonate alone as acid generator had effective sensitivity of 53 mJ/cm2, resolution of 0.15 microns, transmission of 64%, and less smooth line edges. DC A89 (Photographic, laboratory equipment, optical); E19 (Other organic compounds general - unknown structure, mixtures); G06 (Photosensitive compositions and bases, photographic processes); L03 (Electro-(in)organic, chemical features of electrical devices); P84 (Other photographic) MC A04-F06E4; A08-M08; A12-E07C; A12-L02B2; E07-B01; E07-H; E10-A01; G06-D06; G06-F03C; G06-F03D; L04-C05 IP C07C-381/00; C07D-333/46; G03F-007/004; G03F-007/039; C07C-381/12; H01L-021/027; C07D-333/00; C03F-007/004 PD EP1167349-A1 02 Jan 2002 C07C-381/00 200229 Pages: 34 English CN1330289-A 09 Jan 2002 G03F-007/039 200229 Chinese US2002015913-A1 07 Feb 2002 G03F-007/004 200229 English JP2002116546-A 19 Apr 2002 G03F-007/039 200243 Pages: 28 Japanese KR2002001557-A 09 Jan 2002 G03F-007/039 200245 US6548220-B2 15 Apr 2003 G03F-007/004 200329 English EP1167349-B1 01 Dec 2004 C07C-381/00 200479 English DE60107491-E 05 Jan 2005 C07C-381/00 200505 German DE60107491-T2 03 Nov 2005 C07C-381/00 200572 German CN1229693-C 30 Nov 2005 G03F-007/039 200652 Chinese TW286664-B1 11 Sep 2007 200841 Chinese KR799943-B1 01 Feb 2008 G03F-007/039 200924 JP4529316-B2 25 Aug 2010 G03F-007/004 201056 Pages: 47 Japanese SG166668-A1 29 Dec 2010 C07C-381/00 201107 English AD EP1167349-A1 EP114724 21 Jun 2001 CN1330289-A CN129511 22 Jun 2001 US2002015913-A1 US886386 22 Jun 2001 JP2002116546-A JP184546 19 Jun 2001 KR2002001557-A KR035374 21 Jun 2001 US6548220-B2 US886386 22 Jun 2001 EP1167349-B1 EP114724 21 Jun 2001 DE60107491-E DE607491 21 Jun 2001 DE60107491-T2 DE607491 21 Jun 2001 CN1229693-C CN129511 22 Jun 2001 TW286664-B1 TW114376 14 Jun 2001 KR799943-B1 KR035374 21 Jun 2001 JP4529316-B2 JP184546 19 Jun 2001 SG166668-A1 SG003598 16 Jun 2001 FD DE60107491-E EP application Application EP114724 DE60107491-E Based on Patent EP1167349 DE60107491-T2 EP application Application EP114724 DE60107491-T2 Based on Patent EP1167349 KR799943-B1 Previous Publ. Patent KR2002001557 JP4529316-B2 Previous Publ. Patent JP2002116546 PI JP189120 23 Jun 2000 EP114724 21 Jun 2001 DS EP1167349-A1: (Regional): AL; AT; BE; CH; CY; DE; DK; ES; FI; FR; GB; GR; IE; IT; LI; LT; LU; LV; MC; MK; NL; PT; RO; SE; SI; TR EP1167349-B1: (Regional): BE; DE; FR; GB; IT; NL FS 430/270.1; 430/905; 430/914; 430/921; C07C381//00 CP EP1167349-A1 EP789278-B1 JAPAN SYNTHETIC RUBBER CO LTD (JAPS) SUWA M, KAJITA T, IWANAGA S, OTA T EP982628-B1 SUMITOMO CHEM CO LTD (SUMO) FUJISHIMA H, UETANI Y, ARAKI K EP1041442-B1 SUMITOMO CHEM CO LTD (SUMO) UETANI Y, OOHASHI K, INOUE H US5585507-A NEC CORP (NIDE) NAKANO K, MAEDA K, IWASA S, HASEGAWA E US5691111-A NEC CORP (NIDE) IWASA S, NAKANO K, HASEGAWA E US5968713-A FUJITSU LTD (FUIT) NOZAKI K, YANO E, WATANABE K, NAMIKI T, IGARASHI M, KURAMITSU Y, TAKECHI S, KOTACHI A, TAKAHASHI M US6548220-B2 DE10054550-A1 NEC CORP (NIDE) MAEDA K, IWASA S, NAKANO K, HASEGAWA E EP1041442-A1 SUMITOMO CHEM CO LTD (SUMO) UETANI Y, OOHASHI K, INOUE H EP789278-A2 JAPAN SYNTHETIC RUBBER CO LTD (JAPS) SUWA M, KAJITA T, IWANAGA S, OTA T EP982628-A2 SUMITOMO CHEM CO LTD (SUMO) FUJISHIMA H, UETANI Y, ARAKI K US5585507-A NEC CORP (NIDE) NAKANO K, MAEDA K, IWASA S, HASEGAWA E US5635332-A NEC CORP (NIDE) NAKANO K, MAEDA K, IWASA S, HASEGAWA E US5691111-A NEC CORP (NIDE) IWASA S, NAKANO K, HASEGAWA E US5756850-A NEC CORP (NIDE) IWASA S, NAKANO K, HASEGAWA E US5968713-A FUJITSU LTD (FUIT) NOZAKI K, YANO E, WATANABE K, NAMIKI T, IGARASHI M, KURAMITSU Y, TAKECHI S, KOTACHI A, TAKAHASHI M EP1167349-B1 EP1041442-A1 SUMITOMO CHEM CO LTD (SUMO) UETANI Y, OOHASHI K, INOUE H EP789278-A2 JAPAN SYNTHETIC RUBBER CO LTD (JAPS) SUWA M, KAJITA T, IWANAGA S, OTA T EP982628-A2 SUMITOMO CHEM CO LTD (SUMO) FUJISHIMA H, UETANI Y, ARAKI K US5585507-A NEC CORP (NIDE) NAKANO K, MAEDA K, IWASA S, HASEGAWA E US5691111-A NEC CORP (NIDE) IWASA S, NAKANO K, HASEGAWA E US5968713-A FUJITSU LTD (FUIT) NOZAKI K, YANO E, WATANABE K, NAMIKI T, IGARASHI M, KURAMITSU Y, TAKECHI S, KOTACHI A, TAKAHASHI M KR799943-B1 US5691111-A NEC CORP (NIDE) IWASA S, NAKANO K, HASEGAWA E CR EP1167349-A1 MAKAIYMA T ET AL: "Syntheses and reactions of 2-ethylthio- or 2-phenylthio-2-cycloalkenones" BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN, vol. 44, no. 11, 1971, pages 3155-3158, XP001024405 MAKAIYMA T ET AL: "Syntheses and reactions of 2-ethylthio- or 2-phenylthio-2-cycloalkenones" BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN, vol. 44, no. 11, 1971, pages 3155-3158, XP001024405 US6548220-B2 Iwasa et al., J. Photopolymer Sci. and Tech., vol. 13, No. 2 (2000) pp. 235-236. Mukaiyama, Teruaki et al., "Syntheses and Reactions of 2-Ethylthio- or or 2-Phenylthio-2-cycloalkenones"; Bulletin of the Chemical Society of Japan, vol. 44, No. 11; 1971, pp. 3155-3158. EP1167349-B1 MAKAIYMA T ET AL: "Syntheses and reactions of 2-ethylthio- or 2-phenylthio-2-cycloalkenones" BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN, vol. 44, no. 11, 1971, pages 3155-3158, XP001024405 DN 426259-0-1-0-M N; 326804-0-0-0-K M; 192-0-0-0-; 786-0-0-0- MN 005718601 M N; 005718602 M N; 005718603 K M CI RA4O98-M N; RA2M84-K M; R00426-; R00836- UT DIIDW:2002229777 ER PT P PN US6316357-B1 TI Formation of metal silicide on electronic structure e.g., thin film transistor, having silicon layer involves depositing metal layer on top of silicon layer, and irradiating the metal layer with laser energy. AU LIN K WU H AE IND TECHNOLOGY RES INST (ITRI-C) GA 2002224713 AB NOVELTY - A metal silicide (80, 82, 84) is formed on an electronic structure having a silicon layer (54, 56, 62) by depositing a metal layer (76) on top of the silicon layer; irradiating the metal layer with laser energy to form the metal silicide of less than 50 Angstrom thick at the metal/silicon interface; and removing the unreacted metal layer. USE - The method is used for forming metal silicide on a silicon surface of an electronic structure e.g., thin film transistor (TFT) structure or self-aligned metal oxide semiconductor field effect transistor (MOSFET) structure. ADVANTAGE - The method is capable of forming low resistivity metal silicide without requiring the use of an extended high temperature exposure such as that conducted in a furnace or in a rapid thermal process. Lateral diffusion of silicon in metal and possible formation of bridge between a polysilicon gate and source/drain regions can be avoided. DESCRIPTION OF DRAWING(S) - The figure shows a cross-sectional view of the electronic structure after the metal silicide is formed on the silicon layer. Silicon layer (54, 56, 62) Metal silicide (80, 82, 84) Metal layer (76) TF TECHNOLOGY FOCUS - ELECTRONICS - Preferred Component: The electronic structure includes a ceramic substrate having an amorphous silicon layer or a silicon substrate (52) having a polysilicon layer deposited on top surface.Preferred Method: The metal layer is irradiated with laser energy for 5-200, preferably 30-100, nanoseconds. The laser energy is supplied from an excimer laser of e.g., xenon chloride (XeCl), argon fluoride (ArF), or xenon fluoride XeF, operated in a pulse mode. The unreacted metal layer is removed by wet dipping, utilizing an aqueous solution of cerium nitrate (Ce(NO3)2) and nitric acid (HNO3).Preferred Condition: The excimer laser operates at 220-320 nm wavelength.Preferred Dimension: The metal layer is 50-1000 Angstrom, preferably 450-550 Angstrom, thick. The metal silicide formed is 10-100 Angstrom thick. TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Material: The metal layer consists of cobalt, chromium, tantalum, titanium, tungsten, palladium, hafnium, or molybdenum. DC L03 (Electro-(in)organic, chemical features of electrical devices); U11 (Semiconductor Materials and Processes) MC L04-C10F; U11-C05F; U11-C07 IP H01L-021/28 PD US6316357-B1 13 Nov 2001 H01L-021/28 200228 Pages: 9 English AD US6316357-B1 US947381 08 Oct 1997 PI US947381 08 Oct 1997 FS 148/DIG.147; 148/DIG.90; 438/151; 438/308; 438/655; 438/660; 438/661; 438/662; 438/663; 438/664; 438/682; 438/683; 438/795; 438/FOR.155; 438/FOR.352; 438/FOR.360; 438/FOR.418; 438/FOR.419 CP US6316357-B1 US4622735-A TOKYO SHIBAURA DENKI KK (TOKE) SHIBATA T US5094977-A MICRON TECHNOLOGY I (MICR-Non-standard) YU C, DOAN T T, SANDHU G S US5236865-A MICRON TECHNOLOGY INC (MICR-Non-standard) SANDHU G S, DOAN T T, YU C US5449642-A US5814537-A SHARP KK (SHAF); SHARP MICROELECTRONICS TECHNOLOGY INC (SHAF) MAA J, HSU S T US5879977-A SEMICONDUCTOR ENERGY LAB (SEME) YAMAZAKI S, ZHANG H, TAKEMURA Y, UOCHI H, TAKAYAMA T, UOJI H, CHIYOU K US5888888-A US5937325-A US6156654-A CHARTERED SEMICONDUCTOR MFG LTD PTE (CSEM); UNIV SINGAPORE NAT (UNUS) HO C S, LU Y F, KARUNASIRI R P, LEE Y P, LAP C CR US6316357-B1 Wolf et al., Silicon Processing For The VLSI Era, vol. 1: Process Technology, Lattice Press, 1986, pp. 296-303. UT DIIDW:2002224713 ER PT P PN JP2001144001-A TI Separate exposure of common resist employed in reticle-type pattern formations with electron beam and deep ultraviolet under mix and match scheme form disjoint geometrical patterns specific to EB/DUV. AE NIKON CORP (NIKR-C) GA 2002190176 AB NOVELTY - A typical pattern has a central non-exposure zone (53) surrounded by exposed annular outer envelope (50), the latter comprising corner-zones (51) linked by straight line segments (52). This envelope is formed from a common resist subjected to dual exposure, the corner-zones formed out of deep ultraviolet (DUV) exposure and the straight line segments out of the electron beam (EB) exposure. These exposure-zones are mutually disjoint. USE - Very thin grid-like patterns with characteristic reticular-structure employ argon fluoride (ArF) laser based DUV exposure combined with separate electron beam-based exposure, often under mix and match format. ADVANTAGE - It achieves higher accuracies typically demanded in semiconductor device manufacture while delivering high throughputs during the fabrication of lithographic patterns. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for pattern formation device manufacturing method. DESCRIPTION OF DRAWING(S) - The figure shows the method of dividing doughnut pattern based on optical exposure pattern and electron beam transfer exposure pattern. Annular outer envelope (50) Corner-zones (51) Straight line segments (52) Non-exposure zone (53) DC P84 (Other photographic); U11 (Semiconductor Materials and Processes); V05 (Valves, Discharge Tubes and CRTs) MC U11-C04C; U11-C04E1; U11-C04F1; V05-F05A7A IP G03F-007/20; H01L-021/027 PD JP2001144001-A 25 May 2001 H01L-021/027 200225 Pages: 6 AD JP2001144001-A JP325462 16 Nov 1999 PI JP325462 16 Nov 1999 UT DIIDW:2002190176 ER PT P PN JP2001142216-A; KR2001019927-A; US6514665-B1; KR520180-B TI Additive for ensuring post-exposure delay stability, used in photoresist for forming semiconductor element, comprises alkylene or arylene bisurea compound. AU JUNG J C KO K LEE G S BAIK K H BAEK G H KONG G G KONG K K CHUNG J C AE HYUNDAI ELECTRONICS IND CO LTD (HYNX-C) HYNIX SEMICONDUCTOR INC (HYNX-C) HYUNDAI ELECTRONICS CO LTD (HYNX-C) GA 2002166354 AB NOVELTY - An additive for ensuring post-exposure delay stability when making a photoresist pattern comprises an alkylene or arylene bisurea compound. USE - In lithography using sources such as KrF or ArF laser, VUV, EUV (extreme ultraviolet), electron beam or ion beam. ADVANTAGE - Pattern can be formed even after a 30 minute delay. DETAILED DESCRIPTION - An additive for ensuring post-exposure delay stability when making a photoresist pattern comprises an alkylene or arylene bisurea compound of R3(A)NC(O)N(R1)R2 (I). A = group of formula (R5)(R6)NC(O)N(R4)R- or R7; R = 1-20C alkylene or arylene (both optionally substituted, and optionally containing an ether linkage); R1-R7 = H, or 1-20C alkylene or arylene (both optionally substituted); or R1+R2, R5+R6, R3+R7 = completion of a ring. INDEPENDENT CLAIMS are included for: (1) production of compounds (I), comprising: (a) reacting a diisocyanate of formula OCNRNCO (XIII) with an amine or formula HN(R1)R2, then with an amine of formula HN(R5)R6 to give (I) (R3, R4 = H); or (b) reacting a diamine of formula HN(R4)RN(R3)H (XVI) with an isocyanate of formula R1NCO, then with an isocyanate of formula R5NCO to give (I) (R2, R6 = H); or (c) reacting an isocyanate of formula R1NCO with an amine of formula HN(R3)R7 to give a compound of formula R3(R7)NC(O)N(R1)H; (2) a photoresist composition which includes a photoresist resin, a photoacid generator, and the additive; (3) a method of making a photoresist pattern using the composition; and (4) a semiconductor element using the photoresist composition in its manufacture. TF SPECIFIC COMPOUNDS - (I) is a compound of formula (III)-(XI). EXAMPLE - 1,3,3'-Trimethyl-6-azabicyclo(3.2.1)octane (0.2 mol) was added slowly to hexamethylenediisocyanate (0.1 mol) in THF (11). After about 3 hours reaction, the mixture was concentrated by distillation at reduced pressure and dried to give the additive of formula (III). DC A89 (Photographic, laboratory equipment, optical); E19 (Other organic compounds general - unknown structure, mixtures); G06 (Photosensitive compositions and bases, photographic processes); L03 (Electro-(in)organic, chemical features of electrical devices); P84 (Other photographic); U11 (Semiconductor Materials and Processes) MC A08-M10; A12-E07C; A12-L02B2; E07-D; E10-A13B2; G06-D06; G06-F03D; L04-C05; L04-C06B1; U11-A06A; U11-A09 IP G03F-007/039; C07D-487/08; C07C-273/18; C07C-275/06; C07C-275/28; C08K-005/00; C08K-005/21; C08L-045/00; G03F-007/004; H01L-021/027 PD JP2001142216-A 25 May 2001 G03F-007/039 200222 Pages: 17 Japanese KR2001019927-A 15 Mar 2001 G03F-007/004 200222 US6514665-B1 04 Feb 2003 G03F-007/004 200313 English KR520180-B 10 Oct 2005 G03F-007/004 200680 AD JP2001142216-A JP261342 30 Aug 2000 KR2001019927-A KR036605 31 Aug 1999 US6514665-B1 US651809 30 Aug 2000 KR520180-B KR036605 31 Aug 1999 FD KR520180-B Previous Publ. Patent KR2001019927 PI KR036605 31 Aug 1999 FS 430270.1; 430286.1; 430905; 430919; 430920; 56432; 56443; 56477 CP US6514665-B1 JP10218947-A HYUNDAI ELECTRONICS IND CO LTD (HYNX) JUNG J C, BOK C K, BAIK K H US4330656-A US4444863-A FUJI PHOTO FILM CO LTD (FUJF) SANO K, KONDO S, SATO H US4882202-A TECHNO INSTRUM INVE (TECH-Non-standard) HOLTZMANN A M, RELIS J US4931496-A US5145591-A NIPPON OIL KK (NIOC) KINOSHITA H, SEKIYA M, MISHIMA M US5155267-A US5308743-A FUJI PHOTO FILM CO LTD (FUJF) US5470816-A NIPPON PAPER IND CO LTD (NSES) SATAKE T, TAKANO T, HAYASAKA H, UEHORI Y, NAGAI T US5612279-A NIPPON PAPER IND CO LTD (NSES) SATAKE T, TAKANO T, HAYASAKA H, UEHORI Y, NAGAI T US5686645-A ARCO CHEM TECHNOLOGY LP (ATLF) FARAJ M K US6150069-A HYUNDAI ELECTRONICS IND CO LTD (HYNX) JUNG J C, ROH C H, JUNG M H, BAIK K H, LEE G S US6180316-B1 JSR CORP (JAPS) KAJITA T, SUWA M, IWASAWA H, YAMAMOTO M US6312865-B1 US6358665-B1 CLARIANT INT LTD (CLRN) PAWLOWSKI G, OKAZAKI H, KINOSHITA Y, TSUGAMA N, HISHIDA A, MA X, YAMAGUCHI Y US2001053590-A1 US2002022197-A1 JUNG M H (JUNG-Individual); HONG S E (HONG-Individual); JUNG J C (JUNG-Individual); LEE G S (LEEG-Individual); BAIK K H (BAIK-Individual) JUNG M H, HONG S E, JUNG J C, LEE G S, BAIK K H CR US6514665-B1 Aldrich Handbook of Fine Chemicals and Laboratory Equipment 2000-2001, pp. 337, 704 and 1717. DN 506652-0-0-0-K P U; 506653-0-0-0-K P U; 506654-0-0-0-K P U; 35858-0-0-0-K P U; 506655-0-0-0-K P U; 506656-0-0-0-K P U; 506657-0-0-0-K P U; 506659-0-0-0-K U; 1093-0-0-0-K U; 67214-0-0-0-K S U MN 005717003 K P U; 005717001 K U; 005717002 K U RI 01291 CI RA6CHP-K P U; RA6CHQ-K P U; RA6CHR-K P U; RA6CHS-K P U; RA6CHT-K P U; RA6CHU-K P U; RA6CHV-K P U; RA6CHX-K U; R08550-K U; R01455-K S RG 1455-S U UT DIIDW:2002166354 ER PT P PN JP2001163926-A; KR2001036720-A; US6492088-B1; KR520181-B TI New dicarboxylate or tetracarboxylate photoresist monomers are used for manufacture of photoresist polymer used in photoresist composition. AU CHOI J H KICHI M KIL M G GIL M G AE HYUNDAI ELECTRONICS IND CO LTD (HYNX-C) HYNIX SEMICONDUCTOR INC (HYNX-C) HYUNDAI ELECTRONICS IND CO LTD (HYNX-C) GA 2002157794 AB NOVELTY - New dicarboxylate or tetracarboxylate photoresist monomers are claimed. USE - For formation of photoresist polymer used in photoresist composition. The photoresist composition is used for photoresist pattern formation for manufacture of high integrated semiconductor device. ADVANTAGE - The photoresist polymer resin with high transparency in extreme ultraviolet region and etching and heat resistance is synthesized easily from photoresist monomer. High density fine patterns below 0.15 microm is formed using photoresist composition and semiconductor device is manufactured efficiently. DETAILED DESCRIPTION - The photoresist monomer of formula (Ia) or (Ib) is new. R1 = acid labile protecting group; R2-R4 = hydrogen or acid labile protecting group; n = 1-3 INDEPENDENT CLAIMS are also included for: (i) a photoresist polymer which consists of monomer (Ia or Ib); (ii) manufacture of photoresist polymer which involves mixing monomer (Ia) or (Ib) with polymerization initiator, and reacting resultant mixture in a inert gas atmosphere; (iii) a photoresist composition which contains a photoresist polymer, organic solvent and a photo-acid generator; (iv) photoresist pattern formation which involves applying photoresist compound to etched upper layer part, and a photoresist film is formed, exposing the film, developing the exposed portion to form patterns or designs; and (v) a semiconductor device which is manufactured by photoresist pattern formation. TF TECHNOLOGY FOCUS - POLYMERS - Preferred Group: The acid labile protecting group is of formula -C(R5)(R6)(R7).R5-R7 = hydrogen, 1-3C alkyl, alkoxy or hydroxyalkyl, tetrahydro pyran-2-yl or tetrahydro furan-2-yl.Preferred Polymer: The photoresist polymer contains compound of formula CH2=C(R8)C(O)O(CH2)nOH (II) and compound of formula (III) as comonomers, and has molecular weight of 3000-100000.R8 = hydrogen or methyl;n = 1-8;n' = 3where The photoresist polymer is poly(ditertiary butyl-alpha,alpha'-dimethylene pimelate, poly(di-1-ethoxy ethyl-alpha,alpha'-dimethylene pimelate, poly(di-1-ethoxy-1-methyl ethyl-alpha,alpha'-dimethylene pimelate, poly(di(tetrahydro pyran-2-yl)-alpha and alpha'-dimethylene pimelate, poly(ditertiary butyl-alpha,alpha'-dimethylene pimelate/alpha,alpha'-dimethylene pimelic acid, poly(di-1-ethoxy ethyl-alpha,alpha'-dimethylene pimelate/alpha,alpha'-dimethylene pimelic acid, poly(di-1-ethoxy-1-methyl ethyl-alpha,alpha'-dimethylene pimelate/alpha,alpha'-dimethylene pimelic acid, or poly(di(tetrahydro pyran-2-yl)-alpha-alpha'-dimethylene pimelate/ alpha-alpha'-dimethylene pimelic acid.Preferred Process: Comonomers (II) or (III) is added to photoresist monomer (Ia) or (Ib) and polymerized in the presence of organic solvent and initiator, to obtain photoresist polymer.During photoresist pattern formation, baking is performed before and after exposure of the photoresist film, at 70-200degreesC.The film exposure is performed at energy of 1-100 mJ/cm2 and using argon-fluorine, krypton-fluorine, vacuum ultraviolet, extreme ultraviolet, electron beam, X-ray or ion beam as light source. TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compounds: The initiator is 2,2'- azobisisobutyronitrile (AIBN), acetyl peroxide, lauryl peroxide, t-butyl per acetate, t-butyl hydroperoxide, di-t-butyl peroxide, or benzoyl peroxide.The organic solvent used in polymerization of photoresist monomer is cyclohexanone tetrahydrofuran, dimethylformamide, dimethyl sulfoxide, dioxane, methyl ethyl ketone, benzene, toluene, xylene.The organic solvent contained in photoresist composition is methyl-3-methoxy propionate, ethyl-3-ethoxy propionate, propylene glycol methyl ether acetate, or cyclohexanone.Ratio of amount of organic solvent to polymer is 100-1000 weight percent (wt.%).The photo-acid generator is sulfide or onium salt type compound.The photo-acid generator is preferably iodine salt of diphenyl hexafluoro arsenate, iodine salt of diphenyl hexafluoro antimonate, diphenyl para methoxyphenyl triflate, a diphenyl para toluenyl triflate, a diphenyl para-isobutyl phenyl triflate, a diphenyl para-t-butyl phenyl triflate, triphenyl sulfonium hexafluoro phosphate, triphenyl sulfonium hexafluoroarsenate, triphenyl sulfonium hexafluoroantimonate, triphenyl sulfonium triflate, and/or dibutylnaphthyl sulfonium triflate.Ratio of amount of photo-acid generator to polymer is 0.05-10 wt.% SPECIFIC COMPOUNDS - The photoresist monomer is tetraethyl-1,1,5,5-pentane tetracarboxylate, diethyl-alpha-alpha'-dicarboxypimelate, diethyl-alpha,alpha'-dimethylene pimelate, ditertiary butyl-alpha,alpha'-dimethylene pimelate, di-1-ethoxy ethyl-alpha,alpha'-dimethylene pimelate, di-1-ethoxy-1-methyl ethyl-alpha,alpha'-dimethylene pimelate, or di(tetrahydropyran-2-yl)-alpha-alpha'-dimethylene pimelate. EXAMPLE - alpha,alpha'-Dimethylene pimelic acid (in grams) (18.42) was dissolved to tetrahydrofuran and heat refluxed after adding thionyl chloride. Tertiary butanol (29.65) and triethylamine (50.6) dissolved in tetrahydro pyran, was added to the resulting solution. Tetrahydropyran and triethylamine were removed under reduced pressure at 60degreesC. The resulting solution was washed with sodium bicarbonate and dried. Ditertiary butyl-alpha-alpha'-dimethylene pimelate (17.8), was obtained. Ditertiary butyl-alpha-alpha'-dimethylene pimelate (29064), was polymerized in the presence of azoisobutyronitrile (0.2), and tetrahydrofuran at 60degreesC in argon atmosphere. Poly(ditertiary butyl-alpha-alpha'-dimethylene pimelate) (23.7), was obtained. Photoresist polymer (10) was mixed with propylene glycol methyl ether acetate solvent (50) and triphenyl sulfonium triflate (0.2) and filtered with 0.1 microm filter, and photoresist composition was obtained. The composition was spin coated on silicon wafer and heated at 140degreesC for 90 seconds. The photoresist film formed was exposed to argon-fluorine laser and reheated at 140degreesC for 90 seconds. After heating, development was performed and 0.15 micromL/S patterns were formed. DC A89 (Photographic, laboratory equipment, optical); E19 (Other organic compounds general - unknown structure, mixtures); G06 (Photosensitive compositions and bases, photographic processes); L03 (Electro-(in)organic, chemical features of electrical devices); P84 (Other photographic); U11 (Semiconductor Materials and Processes) MC A12-E07C; A12-L02C; E07-A02; E07-A02E; E07-A02J; E10-A23A; E10-C02B; E10-C04F; E10-G02B2; G06-D06; G06-F03B; G06-F03D; L04-C05; U11-A06A IP C08F-036/20; C07C-069/34; C07C-069/602; C08F-004/04; C08F-004/32; C08K-005/00; C08K-005/521; C08K-005/59; C08L-047/00; G03F-007/039; H01L-021/027; G03F-007/004 PD JP2001163926-A 19 Jun 2001 C08F-036/20 200221 Pages: 13 Japanese KR2001036720-A 07 May 2001 G03F-007/004 200221 US6492088-B1 10 Dec 2002 G03F-007/039 200301 English KR520181-B 10 Oct 2005 G03F-007/004 200680 AD JP2001163926-A JP310887 11 Oct 2000 KR2001036720-A KR043843 11 Oct 1999 US6492088-B1 US686548 11 Oct 2000 KR520181-B KR043843 11 Oct 1999 FD KR520181-B Previous Publ. Patent KR2001036720 PI KR043843 11 Oct 1999 FS 430270.1; 430910 CP US6492088-B1 US6303266 TOSHIBA KK (TOKE) DN 464109-0-0-0-N; 464110-0-0-0-N; 464112-0-0-0-N; 464113-0-0-0-N; 45500-0-0-0-N; 192-0-0-0-K S U; 131213-0-0-0-K S; 47121-0-0-0-K S; 1771-0-0-0-K S; 326-0-0-0-K S U; 397-0-0-0-K S U; 79-0-0-0-K S U; 93459-0-0-0-K S; 3478-0-0-0-K S; 188082-0-0-0-K S; 208954-0-0-0-K S; 319260-0-1-0-K S; 203310-0-0-0-K S; 132057-0-0-0-K S; 238314-0-0-0-K S; 242517-0-0-0-K S; 131870-0-0-0-K S; 131869-0-0-0-K S MN 004959901 N CI RA5GUR-N; RA5GUS-N; RA5GUT-N; RA5GUU-N; RA5GUV-N; R00426-K S; R10247-K S; RA09HS-K S; R05074-K S; R00389-K S; R00899-K S; R00610-K S; RA07DR-K S; RA06JX-K S; R12814-K S; RA06JZ-K S; RA2H0P-K S; RA02A8-K S; R09834-K S; RA0SPA-K S; RA0VU4-K S; R09414-K S; R09413-K S RG 0426-S U; 0389-S U; 0899-S U; 0610-S U UT DIIDW:2002157794 ER PT P PN EP1150169-A2; CN1320840-A; JP2001319800-A; US6661018-B1; EP1150169-B1; DE60103949-E; CN1196978-C TI Gas jet nozzle for extreme ultraviolet light source used for semiconductor lithography, has secondary channel to expel secondary gas stream, and thereby shape primary gas stream. AU MCGREGOR R D CLENDENING C W CLENDENING C CLENDENIN JR C W AE TRW INC (THOP-C) TRW INC (THOP-C) TRW INC (THOP-C) NORTHROP GRUMMAN CORP (NOTH-C) NORTHROP GRUMMAN CORP (NOTH-C) NORTHROP GRUMMAN CORP (NOTH-C) GA 2002149376 AB NOVELTY - The housing (22) has primary channel (30) to expel gas stream (36) from primary gas source (46). A secondary channel (34) located within the housing, expels gas stream (42) from the secondary gas source (44) and thereby shapes the gas stream (36). USE - For extreme ultraviolet (EUV) light source used for semiconductor lithography during manufacture of integrated circuits which are used in portable computer, cellular phone, personal digital assistant (PDA). ADVANTAGE - Damage to the nozzle due to high temperature plasma is significantly reduced, because lateral expansion of gas stream expelled from the primary channel is reduced, therefore the life of the nozzle is increased and the replacement cost is saved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method of converting laser energy to extreme ultraviolet (EUV) energy. DESCRIPTION OF DRAWING(S) - The figure shows a cross-sectional view of an EUV lithography gas jet nozzle. Gas jet nozzle (20) Housing (22) Primary channel (30) Secondary channel (34) Primary gas stream (36) Secondary gas stream (42) Secondary gas source (44) Primary gas source (46) DC P84 (Other photographic); U11 (Semiconductor Materials and Processes) MC U11-C04E1 IP G03F-007/20; G03F-007/16; B05B-001/00; H05H-001/24; G21K-001/00; H01L-021/027; H01S-003/00; H05H-001/04; H05G-002/00 PD EP1150169-A2 31 Oct 2001 G03F-007/20 200220 Pages: 9 English CN1320840-A 07 Nov 2001 G03F-007/16 200220 Chinese JP2001319800-A 16 Nov 2001 H05H-001/24 200220 Pages: 8 Japanese US6661018-B1 09 Dec 2003 H05H-001/04 200381 English EP1150169-B1 23 Jun 2004 G03F-007/20 200442 English DE60103949-E 29 Jul 2004 G03F-007/20 200452 German CN1196978-C 13 Apr 2005 G03F-007/20 200652 Chinese AD EP1150169-A2 EP109305 11 Apr 2001 CN1320840-A CN104501 14 Feb 2001 JP2001319800-A JP012664 22 Jan 2001 US6661018-B1 US559303 25 Apr 2000 EP1150169-B1 EP109305 11 Apr 2001 DE60103949-E DE603949 11 Apr 2001 CN1196978-C CN104501 14 Feb 2001 FD DE60103949-E EP application Application EP109305 DE60103949-E Based on Patent EP1150169 PI US559303 25 Apr 2000 EP109305 11 Apr 2001 DS EP1150169-A2: (Regional): AL; AT; BE; CH; CY; DE; DK; ES; FI; FR; GB; GR; IE; IT; LI; LT; LU; LV; MC; MK; NL; PT; RO; SE; SI; TR EP1150169-B1: (Regional): DE; FR; GB; NL FS 250/423P; 250/492.22; 250/504R; 378/119; 430/311; G03F-007/20 CP EP1150169-A2 US4663567-A PHYSICS INT CO (PHYS-Non-standard) WONG S L US6661018-B1 US4663567-A PHYSICS INT CO (PHYS-Non-standard) WONG S L US5577092-A US6007963-A US6011267-A US6031598-A EUV LLC (EUVE-Non-standard) TICHENOR D A, HANEY S J, SWEENEY D W, KUBIAK G D US6190835-B1 ADVANCED ENERGY SYSTEMS INC (ADEN-Non-standard) HAAS E G, GUTOWSKI R M, CALIA V S US6469310-B1 ASML NETHERLANDS BV (ASML) FIEDOROWICZ H, BIJKERK F, DE BRUIJN C C, BARTNIK A EP1150169-B1 US4663567-A PHYSICS INT CO (PHYS-Non-standard) WONG S L CR EP1150169-A2 BRUIJN DE R ET AL: "CHARACTERIZATION OF A NOVEL DOUBLE-GAS-JET LASER-PLASMA EUV SOURCE" PROCEEDINGS OF THE SPIE, SPIE, BELLINGHAM, VA, US, vol. 3997, 28 February 2000 (2000-02-28), pages 157-161, XP001041090 FIEDOROWICZ H ET AL: "CHARACTERIZATION AND OPTIMIZATION OF A LASER-PRODUCED X-RAY SOURCE WITH A GAS PUFF TARGET" PROCEEDINGS OF THE SPIE, SPIE, BELLINGHAM, VA, US, vol. 3767, 21 July 1999 (1999-07-21), pages 10-20, XP001035289 US6661018-B1 Bruijn, Rene de, et al.: Characterization of a Novel Double-Gas-Jet Laser-Plasma EUV Source, Proceedings of the SPIE, SPIE, Bellingham, VA, vol. 3997, Feb. 28, 2000, pp. 157-161. Fiedorowicz, H., et al.: Characterization and Optimization of a Laser-Produced X-Ray Source with a Gas Puff Target, Proceedings of the SPIE, Bellingham, VA, vol. 3767, Jul. 21, 1999, pp. 10-20. EP1150169-B1 BRUIJN DE R ET AL: "CHARACTERIZATION OF A NOVEL DOUBLE-GAS-JET LASER-PLASMA EUV SOURCE" PROCEEDINGS OF THE SPIE, SPIE, BELLINGHAM, VA, US, vol. 3997, 28 February 2000 (2000-02-28), pages 157-161, XP001041090 FIEDOROWICZ H ET AL: "CHARACTERIZATION AND OPTIMIZATION OF A LASER-PRODUCED X-RAY SOURCE WITH A GAS PUFF TARGET" PROCEEDINGS OF THE SPIE, SPIE, BELLINGHAM, VA, US, vol. 3767, 21 July 1999 (1999-07-21), pages 10-20, XP001035289 UT DIIDW:2002149376 ER PT P PN JP2001237162-A; JP3367497-B2 TI Semiconductor device manufacture involves forming anti-reflective coating consisting of silicon-oxygen-nitrogen film on wafer laminated with wiring material, and thermally processing the film. AE NEC CORP (NIDE-C) GA 2002099851 AB NOVELTY - Anti-reflective coat consisting of silicon-oxygen-nitrogen (SiON) film is formed on wafer (5) laminated with wiring material, by plasma chemical vapor deposition apparatus, and SiON film is thermally processed at 650degreesC or more. The wiring material is patterned by photolithography using laser radiation, and semiconductor device is manufactured. USE - For manufacturing semiconductor device. ADVANTAGE - The method enables reliable manufacture of semiconductor device excellent in quality. The semiconductor device has stabilized krypton fluoride laser radiation absorption characteristics after formation of anti-reflective film. DESCRIPTION OF DRAWING(S) - The figure shows the schematic block diagram of chemical vapor deposition apparatus used for forming anti-reflective coat. (Drawing includes non-English language text). Wafer (5) TF TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Material: The SiON film is formed from mixed gas comprising gaseous silane and nitrogen oxide. DC L03 (Electro-(in)organic, chemical features of electrical devices); P84 (Other photographic); U11 (Semiconductor Materials and Processes) MC L04-C01B; L04-C10A; L04-C12A; L04-C12B; L04-C16; U11-C05B5 IP G03F-007/11; H01L-021/027; H01L-021/318; H01L-021/3205 PD JP2001237162-A 31 Aug 2001 H01L-021/027 200214 Pages: 5 JP3367497-B2 14 Jan 2003 200308 Pages: 5 AD JP2001237162-A JP045829 23 Feb 2000 JP3367497-B2 JP045829 23 Feb 2000 FD JP3367497-B2 Previous Publ. Patent JP2001237162 PI JP045829 23 Feb 2000 FS x CP JP3367497-B2 JP9055351-A SONY CORP (SONY) JP10055072-A TOSHIBA KK (TOKE) JP2001015506-A NEC YAMAGATA LTD (NIDE) UT DIIDW:2002099851 ER PT P PN US2001021479-A1; JP2001290275-A; US6376152-B2 TI Positive photoresist composition for use in production of, e.g. lithographic printing plate, includes specific nitrogen-containing compound. AU KAWABE Y KANNA S NISHIYAMA F AE KAWABE Y (KAWA-Individual) KANNA S (KANN-Individual) NISHIYAMA F (NISH-Individual) FUJI PHOTO FILM CO LTD (FUJF-C) FUJI PHOTO FILM CO LTD (FUJF-C) GA 2002089119 AB NOVELTY - A positive photoresist composition comprises a photo-acid generator, a resin, and a specific nitrogen-containing compound. USE - For use in production of, e.g. a lithographic printing plate, a semiconductor integrated circuit, or a circuit board for liquid crystal and thermal head. ADVANTAGE - The inventive composition can be exposed to, e.g. a far ultraviolet ray, including a krypton fluoride excimer laser beam, and has an improved line edge roughness. It is also excellent in various resist characteristics, e.g. sensitivity, resolution, resist profile, and depth of focus. DETAILED DESCRIPTION - A positive photoresist composition comprises a photo-acid generator which generates an acid upon irradiation with an actinic ray or radiation; a resin which is insoluble or sparingly soluble in alkali but becomes soluble in alkali by the action of an acid; and a nitrogen-containing compound containing at least one partial structure of formula C(=O)N(OH) (I). TF TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The nitrogen-containing compound is a compound of formula RaC(=O)N(OH)Rb (Ia), RC(=O)N(OH)H (II-1) or (II-2). The photo-acid generator is a diazonium salt, an ammonium salt, a phosphonium salt, an iodonium salt, a sulfonium salt, a selenonium salt, an arsonium salt, an organic halide compound, an organic metal/organic halide compound, a photo-acid generator having an o-nitrobenzyl type protective group, a compound which photolyze to generate a sulfonic acid, a disulfone compound, a diazoketosulfone compound, or diazodisulfone compound. Preferably, it is a trihalomethyl-substituted oxazole derivative of formula (PAG1), a trihalomethyl-substituted s-triazine derivative of formula (PAG2), an iodonium salt of formula I+(Ar1)(Ar2)X- (PAG3), a sulfonium salt of formula S+(R203)(R204)(R205)X- (PAG4), a disulfone derivative of formula Ar3(SO2)2Ar4 (PAG5), an imminosulfonate derivative of formula (PAG6), or a diazodisulfone derivative of formula RcS(=O)(=O)C(=N2)S(=O)(=O)Rc (PAG7). Further, the composition comprises a nitrogen-containing basic compound as an acid scavenger having a structure of formula N(R250)(R251)(R252) (A), NC=N (B), =CN=C (C), =CN (D), or R253C(R254)NC(R255)(R256) (E).Ra = H or optionally substituted alkenyl, alkyl or aryl;Rb = H, optionally substituted aryl, C(=O)Ra, or N=NRa;orRa and Rb = form ring;R = 1-20C monovalent organic residue;R1-R10 = H, OH, hal, nitro, cyano, alkoxy, (cyclo)alkyl, hydroxyalkyl, or aryl;R201 = optionally substituted aryl or alkenyl;R202 = C(Y)3 or optionally substituted aryl, alkenyl, or alkyl;Y = Cl or Br;Ar1-Ar4 = optionally substituted aryl;R203-R206 = optionally substituted alkyl or aryl;X = counter ion;A = optionally substituted alkenylene or arylene;Rc = optionally substituted (cyclo)alkyl or aryl;eitherR250-R252 = H, 1-6C (amino)alkyl, 1-6C hydroxyalkyl, or optionally substituted 6-20C aryl;orR251 and R252 = form ring;R253-R256 = 1-6C alkyl;andV, W = (cyclo)alkylene which may contain heteroatom or may be optionally substituted. TECHNOLOGY FOCUS - POLYMERS - Preferred Component: The resin contains repeating units of formulae (IV) and (V) at a molar ratio of 1:99-60:40, respectively. It has an acid-decomposable group in the polymer main chain and side chain. Preferably, the acid-decomposable group is of formula COOA0 or OB0.L = H or Z;Z = optionally substituted (cyclo)alkyl or aralkyl;orL and Z = form 5- or 6-membered ring;A0 = C(R01)(R02)(R03), Si(R01)(R02)(R03) or C(R04)(R05)O(R06);B0 = A0 or COOA0;R01-R05 = H, (cyclo)alkyl, alkenyl, or aryl;R06 = alkyl or aryl.two of R01-R03 or two of R04-R06 bonded to each other to form ring. At least two of R01-R03 are not H.Preferred Properties: The resin whose thickness is 1 mum has a transmittance of 20-90% at 248 nm. It has a weight average molecular weight of 2000-300000, and a molecular weight distribution of 1.0-5.0. EXAMPLE - A photosensitive composition was prepared by mixing (pbw) a resin (94.40), acid generators of formulae (A-1) and (A-3) (1.50 and 3.50, respectively), N-benzoyl-N-phenylhydroxylamine (0.30), an acid scavenger of formula (D-2) (0.30), Troysol S-366 (RTM: surface active agent) (0.03), propylene glycol monomethyl ether acetate (PGMEA) (513.33), and propylene glycol monomethyl ether (220.00). The resin was prepared by distilling a mixture of VP8000 (RTM: poly(p-hydroxystyrene)) and PGMEA, and adding benzyl alcohol, tert-butyl vinyl ether, p-toluenesulfonic acid, triethylamine, and ethyl acetate. The composition had a sensitivity of 18 mJ/cm2, a resolution of 0.13 mum, a depth of focus of 1.20 mum, a line edge roughness of 30 Angstrom, and a rectangular profile. A comparative composition prepared without a nitrogen-containing compound had a sensitivity of 78 mJ/cm2, a resolution of 0.15 mum, a depth of focus of 0.75 mum, a line edge roughness of 90 Angstrom, and a tapered profile. DC A89 (Photographic, laboratory equipment, optical); E19 (Other organic compounds general - unknown structure, mixtures); G06 (Photosensitive compositions and bases, photographic processes); L03 (Electro-(in)organic, chemical features of electrical devices); P84 (Other photographic); U11 (Semiconductor Materials and Processes); V08 (Lasers and Masers) MC A04-C; A08-M08; A08-M10; A12-E01; A12-L02B1; A12-L02B2; A12-W07B; E05-G02; E05-G03A; E05-H; E05-K; E07-D; E07-D13B; E07-E04; E10-A01; E10-A04A; E10-A10; E10-A16B; E10-A18B; G05-A01; G06-D05; G06-D06; G06-F03C; G06-F03D; L04-C05; U11-A06; V08-A04B IP G03F-007/21; G03F-007/39; C08F-002/44; C08F-257/02; C08K-005/16; C08K-005/32; C08L-101/14; G03F-007/004; G03F-007/039; H01L-021/027 PD US2001021479-A1 13 Sep 2001 G03F-007/21 200212 Pages: 40 JP2001290275-A 19 Oct 2001 G03F-007/039 200212 Pages: 44 US6376152-B2 23 Apr 2002 G03F-007/004 200232 AD US2001021479-A1 US775620 05 Feb 2001 JP2001290275-A JP196719 29 Jun 2000 PI JP026363 03 Feb 2000 JP196719 29 Jun 2000 FS 430270.1; 430905; 430919 CP US6376152-B2 US5372914-A US5994022-A JAPAN SYNTHETIC RUBBER CO LTD (JAPS) TANABE T, KOBAYASHI E, SHIMIZU M, IWANAGA S US6022665 SHINETSU CHEM IND CO LTD (SHIE) US6165672 HYUNDAI ELECTRONICS IND CO LTD (HYNX) JUNG J C, KO K, BOK C K, BAIK K H US6306264 US6306553 TOSHIBA KK (TOKE) KIHARA N, YUASA F, USHIROGOUCHI T, TADA T, SASAKI O, NAITO T, SAITO S DN 225859-0-0-0-K M; 203310-0-0-0-K M; 203380-0-0-0-K M; 6826-0-0-0-K M; 401-0-0-0-K M; 4396-0-0-0-K M; 106464-0-0-0-K M; 8646-0-0-0-K M; 455449-0-0-0-K M; 175074-0-0-0-K M MN 004798903 K M; 004798904 K M; 004798905 K M; 004798906 K M; 004798907 K M; 004798908 K M; 004798909 K M; 004798910 K M; 004798911 K M; 004798912 K M; 004798913 K M; 004798914 K M; 004798901 K M; 004798902 K M RI 00085; 00212; 01521 CI RA0JAY-K M; RA02A8-K M; RA02C3-K M; R13535-K M; RA01DP-K M; RA1S8L-K M; RA0KLI-K M; R13530-K M; RA5AD8-K M; RA5AD9-K M UT DIIDW:2002089119 ER PT P PN US6316167-B1; JP2001242630-A; JP3506240-B2 TI Lithographic structure for, e.g. electron beam lithography, comprises layers comprising layer of energy active material and hard mask layer. AU ANGELOPOULOS M BABICH K GRILL A HALLE S D MAHOROWALA A P PATEL V V CATHERINA B ALFRED G SCOTT D H AAPAN P M VISHUNUBUHAI V P AE INT BUSINESS MACHINES CORP (IBMC-C) IBM CORP (IBMC-C) GA 2002081890 AB NOVELTY - A lithographic structure comprises layers comprising a layer of an energy active material; and a hard mask layer. USE - For electron beam lithography, ion beam lithography, and x-ray lithography (claimed). ADVANTAGE - The inventive lithographic structure is an improved resist structure having layers whose bottom layer is a layer whose optical properties and chemical compositions are tuned, and does not interact with the resist layer. DETAILED DESCRIPTION - A lithographic structure comprises layers comprising a layer of an energy active material; and an RCHX layer(s), which comprises a material having a structural formula R:C:H:X, where R comprises silicon, germanium, boron, tin, iron and/or titanium; and X is not present, or comprises oxygen, nitrogen and/or fluorine. An INDEPENDENT CLAIM is also included for a method of making a lithographic structure comprising depositing on a surface of a substrate, layers as above. DESCRIPTION OF DRAWING(S) - The figure shows a diagram of an RCHX ARC-hard mask resist structure. TF TECHNOLOGY FOCUS - ELECTRONICS - Preferred Device: The lithographic structure further comprises a nitride layer and an oxide layer between a surface and RCHX layer; and a pattern in the layers.Preferred Condition: The RCHX layer is vapor deposited by radiation assisted techniques comprising chemical vapor deposition, high density plasma, sputtering, ion beam, electron beam or laser assisted techniques. An etch selectivity of the RCHX layer to the substrate is greater than 1:3. The etch selectivity of the energy active material to the RCHX layer is greater than 1:1. There is less than 0.01 reflectance at an interference between the energy active layer and the RCHX layer.Preferred Component: The substrate comprises a semiconductor, an insulator, a non-metallic conductor, a polymer, a glass, and/or a metal. The RCHX layer is an anti-reflection coating at a wavelength of 248, 193, 157 and 126 nm, and extreme ultraviolet. It has an index of refraction tunable between 1.4-2.6; and a extinction coefficient tunable at 0.01-0.78 (preferably 0.15-0.6), at 248, 193, 157 and 126 nm, and extreme ultraviolet. It is patternable and removable by reactive ion etching in a plasma containing oxygen, fluorine, chlorine, bromine and/or hydrogen.Preferred Function: The RCHX layer functions as a hardmask layer, an anti-reflection layer and as a combined hardmask/anti-reflection layer (preferably a hardmask layer).Preferred Property: The layer of energy active material has a thickness of 500-6000 Angstrom . TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The RCHX layer comprises (atom%) R (0-95); C (greater than 0-95); H (greater than 0-50; and X (0-70). DC L03 (Electro-(in)organic, chemical features of electrical devices); P81 (Optics); P84 (Other photographic) MC L04-C05 IP G03F-007/26; C23C-016/32; G03F-007/11; G02B-001/10; G02B-001/11; H01L-021/027 PD US6316167-B1 13 Nov 2001 G03F-007/26 200211 Pages: 20 English JP2001242630-A 07 Sep 2001 G03F-007/11 200211 Pages: 16 Japanese JP3506240-B2 15 Mar 2004 G03F-007/11 200419 Pages: 16 Japanese AD US6316167-B1 US480442 10 Jan 2000 JP2001242630-A JP002614 10 Jan 2001 JP3506240-B2 JP002614 10 Jan 2001 FD JP3506240-B2 Previous Publ. Patent JP2001242630 PI US480442 10 Jan 2000 FS 430/272.1; 430/311; 430/313; 430/319; 430/325; 438/712 CP US6316167-B1 EP1061560-A2 SHIPLEY CO LLC (SHIL) PAVELCHEK E K US5744227-A SOUTHWALL TECHNOLOGIES INC (SOUT-Non-standard) BRIGHT C I, WOODARD F E, PACE S J, KOZAK J G US6147009-A GRILL A (GRIL-Individual); JAHNES C V (JAHN-Individual); PATEL V V (PATE-Individual); PERRAUD L C (PERR-Individual) GRILL A, JAHNES C V, PATEL V V, PERRAUD L C JP3506240-B2 JP06196400-A JP07134392-A JP08055790-A JP10163107-A JP11008248-A IBM CORP (IBMC) JP11150115-A IBM CORP (IBMC) CR US6316167-B1 CA 1990:143843, Klages et al, Proc. Electrochem.Soc., 89-12, 1989, 225-36. CA 1993:88064, Wang, Ber. Forschungszent, 2595, 1992.* Kim et al, SPIE, 4226, Nov. 28, 2000, 93-106.* UT DIIDW:2002081890 ER PT P PN JP2001228633-A TI Formation of hole pattern on semiconductor substrate, involves forming hole pattern on etched film, provided on semiconductor substrate by plasma etching using hole patterned photosensitive material film, as mask. AE MATSUSHITA DENKI SANGYO KK (MATU-C) GA 2002069308 AB NOVELTY - Photosensitive material is applied on etched film (11) formed on semiconductor substrate (10), to form photosensitive film (PF) (12). Krypton fluoride excimer laser is irradiated on film (12) to form hole pattern (12a) on it. Hole pattern is formed on film (11) by plasma etching using plasma which has plasma density of 1x1010/cm3 or more, using hole patterned photosensitive material film as mask. USE - The method is used for formation of hole pattern on semiconductor substrates. ADVANTAGE - A favorable flat surface whose hole size does not vary much from a predetermined value is formed on the semiconductor substrate. Deterioration of element characteristics is prevented. The photosensitive material film has high sensitivity and resolving degree. The photosensitive material film is not deteriorated when plasma etching is performed using high density plasma with a high aspect ratio on the etched film. DETAILED DESCRIPTION - A photosensitive material comprising a base resin which consists of a polymer containing polyhydroxy styrene derivative and an acid generating agent containing an onium salt compound, is applied on the etched film formed on the semiconductor substrate, to form a photosensitive material film. Krypton fluoride excimer laser is irradiated on the photosensitive film and a hole pattern is formed on the film. A hole pattern is formed on the etched film by plasma etching using plasma which has plasma density of 1 x1010/cm3 or more, using the hole patterned photosensitive material film as mask. DESCRIPTION OF DRAWING(S) - The figure shows the top view and sectional drawings of the hole pattern formation method. Semiconductor substrate (10) Etched film (11) Photosensitive material film (12) Hole pattern (12a) TF TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Materials: The acid generating agent contains 50-100 weight% (wt.%) of an onium salt and 0-50 wt.% of a diazomethane compound.The acid generating agent is at least onium salt compound, sulfonimide compound, halogen containing compound, sulfone compound, sulfone acid ester compound and/or quinone diazide compound. The polymer contains tertiary-butoxy carbonyl oxy group, as protecting group. The base resin contains 50-80 wt.% of polymer (I) containing polyhydroxy styrene derivative and a tertiary-butoxy carbonyl oxy group, as protective group and 20-50 wt.% of polymer (II) which has an acetal group as protective group and contains polyhydroxy styrene derivative. TECHNOLOGY FOCUS - ELECTRONICS - Preferred Process: Plasma etching is carried out by impressing voltage (I) for generating plasma and impressing voltage (II) for drawing the ion inside the plasma. DC A89 (Photographic, laboratory equipment, optical); G06 (Photosensitive compositions and bases, photographic processes); L03 (Electro-(in)organic, chemical features of electrical devices); P84 (Other photographic); U11 (Semiconductor Materials and Processes) MC A04-C; A08-M08; A12-E07C; A12-L02B2; G06-D; G06-D06; G06-F03C; G06-F03D; L04-C06C; L04-C07D; U11-C07A1 IP G03F-007/004; G03F-007/039; G03F-007/20; G03F-007/40; H01L-021/027; H01L-021/28; H01L-021/3065; H01L-021/768 PD JP2001228633-A 24 Aug 2001 G03F-007/40 200210 Pages: 11 AD JP2001228633-A JP039350 17 Feb 2000 PI JP039350 17 Feb 2000 UT DIIDW:2002069308 ER PT P PN WO200173833-A1; AU200141232-A; KR2001087718-A; TW457575-A; KR397390-B TI Wet-etching apparatus for semiconductor circuit, includes etchant injection tube connected to etchant storage. AU JANG Y I EOM W EOM I H CHANG Y I UHM I H AE SAMBON TLG CO LTD (SAMB-Non-standard) SAMBON TLG CO LTD (SAMB-Non-standard) IMS JH (IMSI-Non-standard) GA 2002041247 AB NOVELTY - A wet-etching apparatus for partially wet-etching a semiconductor substrate (205), on which a circuit pattern is formed, comprises an etchant storage (110), an etchant injection tube (100) connected to the etchant storage, a substrate holder, and a unit for situating the injection tube to a specific part of the substrate to be etched. The injection tube has specific diameter size. USE - For partially wet-etching a semiconductor circuit. ADVANTAGE - The inventive apparatus can perform effective partial wet etching while utilizing only a small amount of etchant, resulting then to a reduction in semiconductor processing cost. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method of manufacturing the injection tube. The method includes making a metal tip having an end that is 1 nm-10 mum in diameter. A coating material, which has a hardness that is higher than that of the metal tip forming material, is applied on an outer circumference of the tip. The coated material is cut, and the metal tip is then removed by etching. DESCRIPTION OF DRAWING(S) - The figure shows the wet-etching apparatus. Etchant injection tube (100) Etchant storage (110) Semiconductor substrate (205) TF TECHNOLOGY FOCUS - ELECTRONICS - Preferred Component: The injection tube is connected to the etchant storage by a cylindrical-shaped part having a diameter of greater than 50 mum. The diameter of this cylindrical shaped-part is sized to be bigger than that of the injection tube. Preferred Dimension: The injection tube has a diameter of 10 nm-1000 mum. Preferred Method: The metal tip maybe made by wet-etching or by electrolysis. When the wet-etching is employed, the metal line to be partially etched is covered with a protection layer and is then soaked in an etchant. When the electrolysis is employed, the metal line is connected to the anode and a metal material to the cathode, after an electrolytic solution is filled in a bridged beaker. A direct current (DC) voltage (preferably greater than 2 volts) is then applied to the metal line and the metal material to start etching in the electrolytic solution. The coating material is applied by chemical vapor deposition (CVD), hot filament CVD, or micro-wave CVD. When the hot filament CVD is employed, the metal tips are installed on a graphite substrate. The temperature of the filament on upper part of the chamber is increased to 1800-2300degreesC, some pressure is put on, and argon gas of 100-200 sccm and methane gas (CH4) of less than 5 sccm is flowed. When the micro-wave CVD is employed, the method is carried out at 900-1000degreesC, 75-85 torr, and 3000-3500 W electrical power. Hydrogen gas (H2) of 250-300 slm and CH4 gas of 25-35 sccm is flowed in a chamber where DC plasma is formed. The coating material is removed by using a laser beam which has a center line that is angled to a center line of the metal tip at 90degrees or 2-170degrees. It can also be removed by exposing the tip to plasma including oxygen. Preferred Condition: The electrolytic solution has 2-4 mol concentration and is at 40-70degreesC. The coating material is applied to a thickness of 0.5 mum-1 mm. TECHNOLOGY FOCUS - POLYMERS - Preferred Material: The injection tube or the coating material is made from Teflon, polyethylene, polypropylene, and/or acetal. The protection layer maybe paraffin, epoxy, and/or a material having a molecular weight of greater than 3000. TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Material: The injection tube or the coating material can also be made from diamond, cubic boron nitride, and/or sapphire. The metal tip is made of copper (Cu), gold (Au), silver (Ag), tungsten, chromium, silicon, molybdenum, tantalum, and/or titanium (Ti). The protection layer may also be glass, diamond, gold, and/or white gold. The etchant is hydrochloric acid (HCl), nitric acid (HNO3), sulfuric acid (H2SO4), hydrofluoric acid (HF), acetic acid, oxygenated water, and/or ammonia water. The metal material is iron, ruthenium, cobalt, nickel, platinum, Cu, Ag, Au, zinc, cadmium, mercury, aluminum, gallium, indium, Ti, germanium (Ge), tin, lead, antimony, bismuth, and/or polonium (Po). The laser source maybe (a) fluorine (F2), argon fluoride (ArF), krypton fluoride (KrF), or xenon chloride (XeCl) with a wavelength of 0.19-0.35 mum and a power of less than 150 W, (b) carbon dioxide (CO2) with a wavelength of 9.6-10.6 mum and a power of 0.3-10 kW, (c) helium-neon (He-Ne) with a wavelength of 0.6-1.06 mum and a power of 0.1-1 kW, or (d) solid neodymium:yttrium aluminum garnet (Nd:YAG) with a wavelength of 1.06 mum and a power of 0.1-1 kW. Preferred Solution: The electrolytic solution is a base containing hydroxyl group. DC A88 (Mechanical engineering, tools, valves, gears, conveyor belts); L03 (Electro-(in)organic, chemical features of electrical devices); U11 (Semiconductor Materials and Processes) MC A12-E07C; A12-H02; L04-C07C; L04-D; U11-C07B IP H01L-021/306; H01L-021/302; C25F-003/14 PD WO200173833-A1 04 Oct 2001 H01L-021/306 200205 Pages: 42 English AU200141232-A 08 Oct 2001 H01L-021/306 200208 English KR2001087718-A 21 Sep 2001 H01L-021/306 200219 TW457575-A 01 Oct 2001 H01L-021/302 200243 Chinese KR397390-B 13 Sep 2003 200412 AD WO200173833-A1 WOKR00363 08 Mar 2001 AU200141232-A AU041232 08 Mar 2001 KR2001087718-A KR011620 08 Mar 2000 TW457575-A TW107409 20 Apr 2000 KR397390-B KR011620 08 Mar 2000 FD AU200141232-A Based on Patent WO200173833 KR397390-B Previous Publ. Patent KR2001087718 PI KR011620 08 Mar 2000 DS WO200173833-A1: (National): AE; AG; AL; AM; AT; AU; AZ; BA; BB; BG; BR; BY; BZ; CA; CH; CN; CR; CU; CZ; DE; DK; DM; DZ; EE; ES; FI; GB; GD; GE; GH; GM; HR; HU; ID; IL; IN; IS; JP; KE; KG; KP; KZ; LC; LK; LR; LS; LT; LU; LV; MA; MD; MG; MK; MN; MW; MX; MZ; NO; NZ; PL; PT; RO; RU; SD; SE; SG; SI; SK; SL; TJ; TM; TR; TT; TZ; UA; UG; US; UZ; VN; YU; ZA; ZW (Regional): AT; BE; CH; CY; DE; DK; EA; ES; FI; FR; GB; GH; GM; GR; IE; IT; KE; LS; LU; MC; MW; MZ; NL; OA; PT; SD; SE; SL; SZ; TR; TZ; UG; ZW CP WO200173833-A1 JP10079371-A SHIBAURA SEISAKUSHO KK (SHBE) US5041229-A DN 104333-0-0-0-; 1013-0-0-0-; 1145-0-0-0- CI R00975-; R00326-; R00964- UT DIIDW:2002041247 ER PT P PN EP1126320-A; EP1126320-A2; JP2001228613-A; US2001041302-A1; KR2001083547-A; KR384810-B; US6641974-B2; JP3477163-B2; TW224717-B1; EP1126320-B1; DE60141550-E TI Chemically amplified positive photoresist composition for fabrication of semiconductor devices, comprises specific copolymer, predetermined low molecular weight additive, acid generator and solvent. AU KIM J Y PARK J H KIN S BOKU S BOKU C PARK S I PARK S Y AE KOREA KUMHO PETROCHEMICAL CO LTD (KKPT-C) KOREA KUMHO PETROCHEMICAL CO LTD (KKPT-C) KIM J Y (KIMJ-Individual) PARK J H (PARK-Individual) KOREA KUMHO PETROCHEMICAL CO LTD (KKPT-C) KOREA KUMHO PETROCHEMICAL CO LTD (KKPT-C) GA 2001618320 AB NOVELTY - A chemically amplified positive photoresist composition, comprises a multi-component copolymer (I) having polystyrene-reduced weight average molecular weight of 3000-50000 and a molecular weight distribution of 1-3, a low molecular weight additive (V), an acid generator and a solvent. USE - For use in fabrication of semiconductor devices, for micro-engineering process using various radiations including far ultraviolet ray in krypton fluoride or argon fluoride excimer laser lithography and for formation of fine resist patterns (less than 0.20 mu). ADVANTAGE - The low molecular weight additive has a good compatibility with normal resins, high transparency to radiations and thermal stability in the range of temperature used in processing the resist. The low molecular weight additive is readily decomposed by the action of acids generated under exposure, generating 2 equivalent weights of carboxyl acids per one equivalent weight of the low molecular weight additives to enhance sensitivity and dissolution rate. The additive has a structure containing monocyclic or polycyclic alkyl group which increases a dry etching resistance and resolution of a resist pattern. The resist composition comprising the additive forms the resist patterns having excellent sensitivity, adhesion to substrate and dry etching resistance. The low molecular additive has an acid labile group which enhances the dissolution-inhibiting effect on the unexposed regions. DETAILED DESCRIPTION - A chemically amplified positive photoresist composition, comprises multi-component copolymer (I) having polystyrene-reduced weight average molecular weight of 3000-50000 and molecular weight distribution of 1-3, low molecular weight additive (V), acid generator and solvent. X,Y = repeating unit of monomer of formulas (II) (III) or (IV); R1 = hydrogen, normal, branched, mono or polycyclic 1-20C alkyl and 1-20C alkyl carbonyl, including acetyl, t-butyl oxycarbonyl, cyclohexane carbonyl, adamanthane carbonyl and bicyclo(2,2,1)heptane methyl carbonyl; R2 = hydrogen, hydroxyl, carboxyl, 1-20C alkyl or alkoxy, alkyl or alkoxy containing hydroxyl or carboxyl, normal or branched alkyloxycarbonyl or alkoxyalkylcarbonyl or mono or polycyclic alkyloxycarbonyl; R3 = hydrogen, normal, branched, mono or polycyclic 1-20C alkyl, including methyl, ethyl, t-butyl, isopropyl, adamantyl and bicyclo(2,2,1)heptane methyl; l,m,n,o, = number representing the repeating unit of the polymer and satisfying l/(l+m+n+o) of 0-0.5, m/(l+m+n+o) of 0-0.5, n/(l+m+n+o) of 0-0.35, o/(l+m+n+o) of 0.4-0.6 and (l+m)/(l+m+n+o) of 0.15-0.5; R4, R5 = normal, branched, monocyclic or polycyclic 1-20C alkyl; R6 = hydrogen, or 1-20C alkyl or alkoxy. TF TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Composition: The photoresist composition comprises 100 weight parts (wt.pts) of the multi-component copolymer (I), 5-50 wt.pts of the low molecular weight additive (V), 0.3-10 wt.pts of the acid generator and the solvent. The photoresist composition comprises less than 50 wt.pts of a basic additive based on 100 wt.pts of the acid generator. EXAMPLE - 3-bicyclo(2,2,1)hept-5-en-2-yl-3-hydroxy-propionic acid-tert-butylester monomer (M-1) (in grams) (7.15), anhydrous maleic acid (4.9), norbornene (1.88) were polymerized in a azoisobutyronitrile (0.82) initiator, and dioxane (27.86) solvent, under argon atmosphere at 65degreesC, to obtain a polymer (P-1) (9.05) with polystyrene-reduced weight average molecular weight of 7800. Cyclohexane carboxylic acid (12.8) and pyridinium p-toluene sulfonate (0.5) were dissolved in methylene chloride, and a cyclohexane dimethanol divinyl ether was added. The reaction solution was stirred at room temperature for 1 hour. The precipitate obtained was dried under vacuum to yield a low molecular weight additive (A-1) (14.7). The photoresist composition was prepared by dissolving 100 weight parts (wt.pts) of polymer P-1, 1.4 wt.pts of triphenyl sulfonium triplate as a photoacid generator, 0.2 wt.pts of tetramethyl ammonium hydroxide as a basic additive and 20 wt.pts of A-1 in 550 wt.pts of propylene glycol methyl ether acetate and filtering. The resist solution was coated on a substrate and dried at 110degreesC to form a 0.4 mum thick resist coating. The coating was irradiated with an argon fluoride excimer laser and baked at 110degreesC. The coating was developed with alkali aqueous solution containing 2.38 weight percent of tetramethylammonium hydroxide, washed and dried to form resist pattern. The pattern had excellent developing property, heat resistance, adhesion to substrate, dry etching resistance, resolution of 0.14 mum, and sensitivity of 24 mJ/cm2. DC A89 (Photographic, laboratory equipment, optical); A18 (Addition polymers in general); G06 (Photosensitive compositions and bases, photographic processes); L03 (Electro-(in)organic, chemical features of electrical devices); P84 (Other photographic) MC A04-F01A; A04-F05; A04-G; A08-M08; A08-S02; A12-E07C; A12-L02B2; G06-D06; G06-F03C; G06-F03D; L04-C05 IP G03F-007/039; G03F-007/004; C08K-005/00; C08L-035/00; C08L-045/00; H01L-021/027; G03F-007/04 PD EP1126320-A EP1126320-A2 22 Aug 2001 G03F-007/039 200172 Pages: 21 English JP2001228613-A 24 Aug 2001 G03F-007/039 200172 Pages: 17 Japanese US2001041302-A1 15 Nov 2001 G03F-007/04 200172 KR2001083547-A 01 Sep 2001 G03F-007/039 200217 KR384810-B 22 May 2003 G03F-007/039 200359 US6641974-B2 04 Nov 2003 G03F-007/039 200374 English JP3477163-B2 10 Dec 2003 G03F-007/039 200382 Pages: 17 Japanese TW224717-B1 01 Dec 2004 G03F-007/039 200538 Chinese EP1126320-B1 17 Mar 2010 G03F-007/039 201020 English DE60141550-E 29 Apr 2010 G03F-007/039 201029 German AD EP1126320-A2 EP300088 05 Jan 2001 JP2001228613-A JP321421 20 Oct 2000 US2001041302-A1 US759825 12 Jan 2001 KR2001083547-A KR007272 16 Feb 2000 KR384810-B KR007272 16 Feb 2000 US6641974-B2 US759825 12 Jan 2001 JP3477163-B2 JP321421 20 Oct 2000 TW224717-B1 TW126852 15 Dec 2000 EP1126320-B1 EP300088 05 Jan 2001 DE60141550-E DE641550 05 Jan 2001 FD KR384810-B Previous Publ. Patent KR2001083547 JP3477163-B2 Previous Publ. Patent JP2001228613 DE60141550-E EP application Application EP300088 DE60141550-E Based on Patent EP1126320 PI KR007272 16 Feb 2000 DS EP1126320-A2: (Regional): AL; AT; BE; CH; CY; DE; DK; ES; FI; FR; GB; GR; IE; IT; LI; LT; LU; LV; MC; MK; NL; PT; RO; SE; SI; TR EP1126320-B1: (Regional): CH; DE; FR; GB; LI; NL FS x; 430270.1; 430905; 526272; 526281 CP EP1126320-A EP880074-A LUCENT TECHNOLOGIES INC (LUCE) CHANDROSS E A, HOULIHAN F M, NALAMASU O, REICHMANIS E, WALLOW T I US5705317-A EP1126320-A2 EP880074-A1 LUCENT TECHNOLOGIES INC (LUCE) CHANDROSS E A, HOULIHAN F M, NALAMASU O, REICHMANIS E, WALLOW T I US5705317-A US6641974-B2 JP11002903-A JP11184089-A US5585223-A CORNELL RES FOUND INC (CORR) LEE S, FRECHET J M J US6103450-A SAMSUNG ELECTRONICS CO LTD (SMSU) US6143466-A US6146810-A US6286106-B1 US6358666-B1 JP3477163-B2 JP10010739-A LUCENT TECHNOLOGIES INC (LUCE) HOULIHAN F M, REICHMANIS E, NALAMASU O, WALLOW T I JP10111569-A JAPAN SYNTHETIC RUBBER CO LTD (JAPS) SUWA M, KAJITA T, IWANAGA S, OTA T JP10218941-A OKI ELECTRIC IND CO LTD (OKID) ITO T JP10316720-A KUMHO SEOKYUI WAHAKUJUSHIKUHESA (KUMH-Non-standard) PARK J H, KIM J H, KIM K, PARK S Y, KIM S J JP2000098615-A KOREA KUMHO PETROCHEMICAL CO LTD (KKPT) PARK J, SEO D, PARK S, KIM S JP2000508080-A GOODRICH CO B F (GOOR) GOODALL B L, JAYARAMAN S, SHICK R A, RHODES L F JP2001183839-A EP1126320-B1 EP880074-A1 LUCENT TECHNOLOGIES INC (LUCE) CHANDROSS E A, HOULIHAN F M, NALAMASU O, REICHMANIS E, WALLOW T I US5705317-A CR EP1126320-A JOO-HYEON PARK ET AL.: "Novel Single-Layer Photoresist Containing Cycloolefins for 193 nm" PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, vol. 3333, no. 1, - 25 February 1998 (1998-02-25) pages 454-459, XP002168945 USA EP1126320-A2 JOO-HYEON PARK ET AL.: "Novel Single-Layer Photoresist Containing Cycloolefins for 193 nm" PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, vol. 3333, no. 1, - 25 February 1998 (1998-02-25) pages 454-459, XP002168945 USA EP1126320-B1 JOO-HYEON PARK ET AL.: "Novel Single-Layer Photoresist Containing Cycloolefins for 193 nm" PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, vol. 3333, no. 1, - 25 February 1998 (1998-02-25) pages 454-459, XP002168945 USA DN 790-0-0-0-; 55505-0-0-0- CI R00843-; R01289- UT DIIDW:2001618320 ER PT P PN EP1113005-A1; CN1302799-A; KR2001062717-A; JP2002193925-A; EP1113005-B1; TW525038-A; DE60004317-E; US6723483-B1; SG109439-A1; JP4023086-B2; KR684084-B1; CN100486963-C TI New triphenyl sulfonium salt compounds useful as acid generator and cationic photopolymerization initiator e.g. in photoresists for manufacture of semiconductor elements. AU OONO K FUKASAWA K SAKAMOTO K URANO F SUMINO M IMAZEKI S ONO K FUKAZAWA K IMASEKI S KADONO M SAKAMOTO I URANO M AE WAKO PURE CHEM IND LTD (WAKP-C) WAKO PURE CHEM IND LTD (WAKP-C) WAKO PURE CHEM IND LTD (WAKP-C) GA 2001572441 AB NOVELTY - Triphenyl sulfonium salt compound (I) or (II) is new. USE - As an acid generator for a chemically amplified resist and a cationic type photo polymerization initiator for polymerization of an alpha,beta-ethylenically unsaturated monomer (claimed). The resist is used in the production of semiconductor elements. ADVANTAGE - The sulfonium salt compound is easily decomposed by exposure to light. When it is used as an acid generator for chemically amplified resists, ultra-fine pattern profiles can be obtained and roughness of side walls can be improved. DETAILED DESCRIPTION - A triphenyl sulfonium salt compound of formula (I) or (II) is new. D = a group of formula (Ia); R1 and R2 = H or lower alkyl; R3 = alkyl; n = 0-3; i and m = 1-3; j and q = 0-2; Y- = anion derived from R4-SO3H; R4 = alkyl or an aryl optionally substituted with alkyl; X = phenyl having a substituent, preferably -R7, -OR8, -SR9, -N(R10)(R11), 1-6C alkyl or 1-6C alkoxy, at an ortho and/or meta position; R7-R9 = alkyl, aryl, aralkyl (all optionally substituted) or halogen; R10 and R11 = R7 or acyl or together form a hetero ring; Zp- = anion derived from a carboxylic acid; and p = 1 or 2 provided that i+j is 3; at least one of R1 and R2 is lower alkyl and m+q is 3. INDEPENDENT CLAIMS are also included for the following: (a) an acidic generator composition comprising (I) or (II) and a diazodisulfone compound; (b) a resist composition (R1) comprising a polymer (P1) containing as pendant group a protecting group which becomes soluble in an alkaline developing solution by action of an acid and (I) or (II); (c) a resist composition (R2) comprising a polymer (P2) soluble in an alkaline developing solution, a dissolving inhibiting agent containing as pendant group the protecting group and (I) or (II); (d) a resist composition (R3) comprising (P2), a cross-linking agent which cross-links (P2) to make it insoluble in the alkaline developing solution by treatment under heating in the presence of an acid and (I) or (II); (e) generation of an acid by irradiating (R1), (R2) or (R3) with a light; (f) formation of a pattern involving i) coating (R1) (R2) or (R3) on a substrate; ii) irradiating, after heating, light of wavelength at most 220 nm on the substrate through a mask; and iii) developing using a developing solution (after heating, if necessary); (g) a cationic type photo-polymerization initiator comprising (I) or (II); and (h) polymerization of an alpha,beta-ethylenically unsaturated monomer using the initiator under irradiation with light. TF TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Components: The carboxylic acid is R5COOH or HOOC-R6-COOH.R5 = H or monovalent hydrocarbon group (preferably 1-20C alkyl, phenyl or naphthyl, all optionally substituted with Q);Q = halogen, lower alkyl, lower haloalkyl or nitro group;R6 = a direct linkage or a divalent hydrocarbon residue (preferably 1-10C alkylene or 2-10C alkenylene, phenylene or naphthylene all optionally substituted with Q).The dissolving inhibiting agent is of formula R21O-T-((CH3)2)-T-OR21, (III) or (IV). The cross-linking agent is of formula (V) or (VI).R21 = acid labile group;R22 = H or methyl;a = natural number;R23 = H or lower alkyl;R24 = H or lower alkoxymethyl; andT = 1,4-phenylene. TECHNOLOGY FOCUS - POLYMERS - Preferred Components: (P1) and (P2) are of formula (VII).R11-R14 = H or methyl;R15 = H or lower alkyl;R16 = lower alkyl;R15+R16 = alicyclic ring;R17 = alkyl or aralkyl;R18 = H, lower alkyl, lower alkoxy, tetrahydropyranyloxy, tetrahydrofuranyloxy, tert-butoxycarbonyloxy, tert-amyloxycarbonyloxy, benzoyloxy, acetyloxy, pivaloyloxy or tert-butoxycarbonylmethoxy;R19 = H or cyano; R20 = a cyano or carboxy group which may be esterified;r, e, g = 0 or natural number;t = natural number.For (P1), r/r+t+e+g = 0-0.5; e/r+t+e+g = 0-0.3; g/r+t+e+g = 0-0.3; and r+e+g/r+t+e+g = 0.2-0.8.For (P2), r/r+t+e+g = 0-0.2; e/r+t+e+g = 0-0.2; g/r+t+e+g = 0-0.2; and r+e+g/r+t+e+g = 0-0.2. TECHNOLOGY FOCUS - ELECTRICAL POWER AND ENERGY - Preferred Method: The light irradiated is a deep UV, KrF excimer laser, i-line, ArF excimer laser, F2 laser, electron beams or soft X-rays. Preferred Definitions: R1 = methyl or ethyl; R2 = H; n = 0; R3 = 1-10C alkyl; D = ortho-methylphenyl, meta-methylphenyl, 2,3-dimethylphenyl, ortho-ethylphenyl, meta-ethylphenyl, 2,3-diethylphenyl, 2,4-dimethylphenyl, 3,4-dimethylphenyl, 2,6-dimethylphenyl, 3,5-dimethylphenyl, 2,4,6-trimethylphenyl or 3,4,5-trimethylphenyl; and R4 = 4-methylphenyl. SPECIFIC COMPOUNDS - Diphenyl-2,4,6-trimethylphenylsulfonium para-toluenesulfonate and 1-octanesulfonate are specifically claimed as (I). Diphenyl-2,4,6-trimethylphenylsulfonium 1-perfluorooctanoate and para-trifluoromethylbenzoate are specifically claimed as (II). EXAMPLE - Tetrahydrofuran (600 ml) was mixed with diphenyl sulfoxide (24.02 g) under nitrogen and chlorotrimethyl silane (31.5 g) was poured in. A Grignard reagent prepared from m-bromotoluene (50 g) and magnesium turning (4.7 g) was then added and reaction was carried out for 3 hours. 24% Aqueous hydrobromic acid solution (4 ml) was then added at 0-5 degreesC, followed by toluene (600 ml). After work-up, diphenyl-meta-methylphenylsulfonium bromide (A) was obtained. (A) (12.51 g) was dissolved in methylene chloride (50 ml) and silver para-toluenesulfonate (9.77 g) was added. The resulting solution was filtered and the mother liquor was concentrated to give diphenyl-meta-methylphenylsulfonium-para-toluenesulfonate (B) (11.34 g; 72%). A comparative diphenyl-para-methylphenylsulfonium-para-toluenesulfonate (C) was prepared similarly using para-bromotoluene instead of ortho-bromotoluene. A chemically amplified test resist composition (1) was prepared by mixing (g) poly(para-1-ethoxyethoxystyrene/para-tert-butoxycarbonyloxystyrene/para-hydroxystyrene) (6), bis (cyclohexylsulfonyl)diazomethane (0.2), (B) (0.1), tri-n-butylamine (0.1), fluorine-containing nonionic surfactant (0.1) and propylene glycol monomethyl ether acetate (28.5). A comparative resist composition (2) was prepared similarly using (C). (1)/(2) were stored at 23 degreesC and the number of fine particles in the composition were measured at time intervals of 0 day, 1 month and 6 months and found to be: at most 10/at most 10, 14/8800 and 25/8750 respectively. A pattern was formed by coating DUV-32 (an antireflective coating) on a silicon wafer at 200 degreesC for 60 seconds on a hot plate to form an antireflective film (0.52 micron). (1)/(2) was then coated on the film followed by prebaking at 100 degreesC on a hot plate to give a resist film (0.7 micron). The resist film was selectively exposed and post exposed at 110 degreesC for 90 seconds and developed with an alkaline developing solution to obtain a test/comparative positive tone pattern. The test/comparative antireflective film showed the following results: dose (mJ/cm2) = 30/30; dissolution (micron line and space (L and S)) = 0.15/0.16; shape = rectangular/rectangular; DOF (under 0.2 micron L and S) (micron) = +/- 0.5/+/- 0.4; delay time (0 minutes and after 2 hours) (micron L and S) = 0.18/0.18 and 0.18/0.18. (1)/(2) were coated on a silicon wafer and a test/comparative positive toner was developed similarly. The results on a silicon wafer for (1)/(2) were as follows: dose (mJ/cm2) = 45/45; dissolution (micron line and space (L and S)) = 0.18/0.21; shape = rectangular/rectangular; edge roughness (nm) = 15/22. DC A89 (Photographic, laboratory equipment, optical); A13 (Aromatic mono-olefins, including polystyrene); E19 (Other organic compounds general - unknown structure, mixtures); G06 (Photosensitive compositions and bases, photographic processes); L03 (Electro-(in)organic, chemical features of electrical devices); P84 (Other photographic); U11 (Semiconductor Materials and Processes) MC A02-A09; A08-C01; A12-E07C; A12-L02B2; E07-D03; E07-D05; E10-A01; E10-A09B8; E10-C02F; E10-C04L; G06-D06; G06-F03B; G06-F03C; G06-F03D; L04-C05; U11-A06A IP C07C-381/12; G03F-007/004; C08K-005/43; G03F-070/31; C08F-002/48; C08K-005/06; C08K-005/1545; C08K-005/3492; C08K-005/36; C08L-025/18; C09K-003/00; G03F-007/029; H01L-021/027; G03F-007/039; G03F-007/031 PD EP1113005-A1 04 Jul 2001 C07C-381/12 200165 Pages: 42 English CN1302799-A 11 Jul 2001 C07C-381/12 200165 Chinese KR2001062717-A 07 Jul 2001 C07C-381/12 200175 JP2002193925-A 10 Jul 2002 C07C-381/12 200260 Pages: 30 Japanese EP1113005-B1 06 Aug 2003 C07C-381/12 200359 English TW525038-A 21 Mar 2003 G03F-007/004 200365 Chinese DE60004317-E 11 Sep 2003 C07C-381/12 200367 German US6723483-B1 20 Apr 2004 G03F-007/004 200427 English SG109439-A1 30 Mar 2005 C07C-381/12 200524 English JP4023086-B2 19 Dec 2007 C07C-381/12 200802 Pages: 49 Japanese KR684084-B1 16 Feb 2007 C07C-381/12 200850 CN100486963-C 13 May 2009 C07C-381/12 200971 Chinese AD EP1113005-A1 EP127570 15 Dec 2000 CN1302799-A CN120687 27 Dec 2000 KR2001062717-A KR082470 27 Dec 2000 JP2002193925-A JP369910 05 Dec 2000 EP1113005-B1 EP127570 15 Dec 2000 TW525038-A TW126162 08 Dec 2000 DE60004317-E DE604317 15 Dec 2000 US6723483-B1 US730744 07 Dec 2000 SG109439-A1 SG007675 23 Dec 2000 JP4023086-B2 JP369910 05 Dec 2000 KR684084-B1 KR082470 27 Dec 2000 CN100486963-C CN120687 27 Dec 2000 FD EP1113005-B1 Related to Application EP011806 EP1113005-B1 Related to Patent EP1238969 DE60004317-E EP application Application EP127570 DE60004317-E Based on Patent EP1113005 JP4023086-B2 Previous Publ. Patent JP2002193925 KR684084-B1 Previous Publ. Patent KR2001062717 PI JP370655 27 Dec 1999 JP105789 07 Apr 2000 JP315061 16 Oct 2000 DS EP1113005-A1: (Regional): AL; AT; BE; CH; CY; DE; DK; ES; FI; FR; GB; GR; IE; IT; LI; LT; LU; LV; MC; MK; NL; PT; RO; SE; SI; TR EP1113005-B1: (Regional): BE; DE; FR; GB; IT; NL FS C07C381//12; 430/170; 430/270.1; 430/905; 522/31; 568/18; 568/34; 568/35 CP EP1113005-A1 DE2541709-A IMPERIAL CHEM IND LTD (ICIL) EP898201-A1 JSR CORP (JAPS) KOBAYASHI E, SHIMIZU M, TANABE T, IWANAGA S JP05255240-A US5847218-A SHINETSU CHEM IND CO LTD (SHIE) OSAWA Y, WATANABE S, SHIMADA J, TAKEMURA K, NAGURA S, ISHIHARA T WO1999053377-A1 EP1113005-B1 DE2541709-A IMPERIAL CHEM IND LTD (ICIL) EP898201-A1 JSR CORP (JAPS) KOBAYASHI E, SHIMIZU M, TANABE T, IWANAGA S JP05255240-A JP08334893-A US5847218-A SHINETSU CHEM IND CO LTD (SHIE) OSAWA Y, WATANABE S, SHIMADA J, TAKEMURA K, NAGURA S, ISHIHARA T WO1999053377-A1 US6723483-B1 DE2541709-A IMPERIAL CHEM IND LTD (ICIL) EP898201-A1 JSR CORP (JAPS) KOBAYASHI E, SHIMIZU M, TANABE T, IWANAGA S EP908783-A1 SHINETSU CHEM CO LTD (SHIE) WATANABE S, WATANABE O, FURIHATA T, TAKEDA Y, NAGURA S, ISHIHARA T, YAMAOKA T EP989459-A1 CLARIANT JAPAN KK (CLRN) KINOSHITA Y, YAMAGUCHI Y, FUNATO S JP02296801-A JP03052815-A JP05255240-A JP06130669-A JP08245566-A JP08248626-A JP09012537-A JP09015848-A JP09160246-A US5500453-A TOYO INK MFG CO (TOXW) TOBA Y, YASUIKE M, YAMAGUCHI T US5824824-A SHINETSU CHEM IND CO LTD (SHIE); NIPPON TELEGRAPH & TELEPHONE CORP (NITE) OSAWA Y, WATANABE S, TAKEMURA K, NAGURA S, TANAKA H, KAWAI Y US5844057-A SHINETSU CHEM IND CO LTD (SHIE) WATANABE O, TAKEDA Y, TSUCHIYA J, ISHIHARA T US5847218-A SHINETSU CHEM IND CO LTD (SHIE) OSAWA Y, WATANABE S, SHIMADA J, TAKEMURA K, NAGURA S, ISHIHARA T US5880169-A SHINETSU CHEM IND CO LTD (SHIE); NIPPON TELEGRAPH & TELEPHONE CORP (NITE) OSAWA Y, WATANABE S, TAKEMURA K, NAGURA S, TANAKA H, KAWAI Y US6022665-A SHINETSU CHEM IND CO LTD (SHIE) WATANABE O, TAKEDA Y, TSUCHIYA J, ISHIHARA T US6027854-A US6048661-A SHINETSU CHEM IND CO LTD (SHIE) NISHI T, HATAKEYAMA, NAGURA S, ISHIHARA T US6060213-A US6106993-A SHINETSU CHEM IND CO LTD (SHIE) WATANABE S, WATANABE O, NAGURA S, ISHIHARA T US6111143-A KOREA KUMHO PETROCHEMICAL CO LTD (KKPT) PARK J, SEO D, PARK S, KIM S SG109439-A1 GB1526923-A IMPERIAL CHEM IND LTD (ICIL) JP05255240-A US5847218-A SHINETSU CHEM IND CO LTD (SHIE) OSAWA Y, WATANABE S, SHIMADA J, TAKEMURA K, NAGURA S, ISHIHARA T JP4023086-B2 JP05255240-A JP11202491-A JSR CORP (JAPS) KAJITA T, SUWA M, IWASAWA H, YAMAMOTO M JP11249310-A NIPPON GOSEI GOMU KK (JAPS) SUWA M, IWAZAWA H, YAMAMOTO M, KAJITA T JP11258806-A JP11282163-A FUJI PHOTO FILM CO LTD (FUJF) AOSO T, MIZUTANI K, TAN S JP2001066779-A FUJI PHOTO FILM CO LTD (FUJF) FUJIMORI T, TAN S, KANNA S, KODAMA K JP2001100402-A JP2001194794-A FUJI PHOTO FILM CO LTD (FUJF) SATO K, MIZUTANI K, YASUNAMI S JP2001201857-A FUJI PHOTO FILM CO LTD (FUJF) SATO K, MIZUTANI K, YASUNAMI S JP2001272784-A FUJI PHOTO FILM CO LTD (FUJF) SATO K CR US6723483-B1 Database Chemabs 'Online, Chemical Abstracts Service, STN, Caplus accession No. 1994:232097, XP002162402 (abstract). Database Chemabs 'Online, Chemical Abstracts Service, STN, Caplus accession No. 1997:178245, XP002162403 (abstract). Photo-CIDNP and Nanosecond Flash Photolysis on the Photodecomposition of Triarylsulfonium and Diarylhalonium Salts, Polym. Material. Sci. Eng. (1981), pp. 181-184, Kevin M. Welsh et al. Polymeric Materials for Microelectronic Applications, ACS Symposium Series 579 (1994), pp. 130-138, Hiroshi Ito et al. Reaction of Benzene with Diphenyl Sulfoxides, Bull. Pharm. Chem. (1981), pp. 3753-3755, Yasuyuki Endo et al. MN 004603601 K M; 004603602 K M UT DIIDW:2001572441 ER PT P PN JP2001041876-A TI Ultraviolet rays responsive fluorspar for optical systems, has preset transmittance when pulse laser light of ultraviolet rays with specific wavelength, energy density and pulse number is irradiated. AE CANON KK (CANO-C) GA 2001543984 AB NOVELTY - An ultraviolet rays responsive fluorspar has internal transmittance of 99.5%/cm or more when pulse laser light of UV rays with pulse number of 104-107, wavelength of 150-300 nm and energy density of 1-50 mJ/cm2 is irradiated. USE - For optical systems of exposure systems used in production of semiconductor devices such as semiconductor chip, integrated circuit, large scale integrated circuit, liquid crystal panel, magnetic head and charge coupled device (CCD). ADVANTAGE - UV rays durability is evaluated correctly and efficiently. As fluorspar of high durability is used, the optical system having stable illumination characteristics without optical absorption is obtained. High performance device is produced inexpensively with good yield. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following: (i) UV rays durability evaluation method of fluorspar which involves measuring internal transmittance after irradiating pulse laser light of UV rays with wavelength of 150-300 nm and energy density of 1-50 mJ/cm2 on fluorspar; (ii) Krypton fluoride excimer laser durability evaluation method of fluorspar which involves measuring internal transmittance after irradiating KrF excimer laser pulse of energy density 1-50 mJ/cm2 and wavelength 248 nm on fluorspar; (iii) Argon fluoride excimer laser durability evaluation method which involves measuring internal transmittance after irradiating ArF excimer laser pulse of energy density 1-50 mJ/cm2 and wavelength 193 nm on fluorspar; (iv) Optical system which uses UV rays as light source, containing fluorspar; (v) Exposure system for semiconductor production using optical system; and (vi) Device manufacturing method which involves using the exposure system for the exposure process in producing the device. TF TECHNOLOGY FOCUS - ELECTRONICS - Preferred Properties: The fluorspar has internal transmittance of 99.9%/cm or more when KrF excimer laser pulse with energy density of 1-50 mJ/cm2, wavelength of 248 nm and pulse number of 104-107 is irradiated. The fluorspar has internal transmittance of 99.8%/cm or more when ArF laser pulse with energy density of 1-50 mJ/cm2, wavelength of 193 nm and pulse number of 104-107 is irradiated. DC E33 (Compounds of Be, Mg, Ca, Sr, Ba, Ra, Sc, Y, La, Ac, Al, lanthanides (Rare-earths), Th); L03 (Electro-(in)organic, chemical features of electrical devices); P81 (Optics); S03 (Scientific Instrumentation, photometry, calorimetry); U11 (Semiconductor Materials and Processes) MC E34-D02; L03-F02; L03-G02; L04-D; S03-F07; U11-C18D IP C01F-011/22; G01M-011/02; G01N-017/00; G02B-001/02; H01L-021/02; H01L-021/027; H01S-003/00 PD JP2001041876-A 16 Feb 2001 G01N-017/00 200161 Pages: 9 AD JP2001041876-A JP211515 27 Jul 1999 PI JP211515 27 Jul 1999 DN 2903-0-0-0-K P U CI R01819-K P RG 1819-P U UT DIIDW:2001543984 ER PT P PN GB2354005-A; CN1288901-A; FR2798130-A1; JP2001158810-A; KR2001026524-A; US2003100695-A1; GB2354005-B; US6770720-B2; CN1280316-C; TW249538-B1; KR574482-B1; JP4102010-B2 TI Anti-reflective film compositions for useful in submicrolithiography comprises cross-linking agents and hydroxy ester as the chromophore. AU BAIK K HONG S LEE G JUNG J KONG K JUNG M JUNG J C KONG H K JUNG M H HONG S E LEE G S BAIK K H KONG K K KO S HAKU K BAEK G H KONG G G CHONG C GONG G CHONG W AE HYUNDAI ELECTRONICS IND CO LTD (HYNX-C) HYUNDAI ELECTRONIC PROD CO LTD (HYNX-C) HYUNDAI ELECTRONICS IND CO LTD (HYNX-C) HYNIX SEMICONDUCTOR INC (HYNX-C) HYUNDAI ELECTRONICS IND CO LTD (HYNX-C) HYUNDAI ELECTRONICS IND CO LTD (HYNX-C) GA 2001377044 AB NOVELTY - Polymeric organic esters with omega hydroxy functional groups are new. USE - The anti-reflective film is useful in submicrolithiography using argon fluoride (ArF) laser (193 nm). ADVANTAGE - The antireflective film is not affected by the photoresist solution and prevents the scattering of light, hence reducing the standing wave effect. This allows patterns to be formed in a well-defined, ultrafine configuration, contributing greatly to the high integration of semiconductor devices. DETAILED DESCRIPTION - Polymeric organic esters of formula (I) containing omega hydroxy functional group are new. R = H or Me; R4 = optionally substituted linear or branched 1-5C alkyl; b, c = mole numbers. provided that b:c = 0.1 - 1:0.1 - 1. INDEPENDENT CLAIMS are also included for the following: (A) preparation of compounds of formula (I) involving (i) dissolving the corresponding monomers in an organic solvent; and (ii) allowing the solution of step (i) to polymerize in presence of an initiator under a nitrogen or argon atmosphere. (B) Anti-reflective film composition comprising compounds of formula (I) and compound of formula (II): R3 = H, R4; n = not defined. (C) formation of an anti-reflective film pattern comprising: (i) applying the organic anti-reflective film composition onto a layer to be etched; (ii) baking the layer of step (i); (iii) creating a photoresist pattern by coating a photoresist film on the anti-reflective film, exposing the photoresist film to a light source and developing the light exposed photoresist film; and (iv) etching sequentially the anti-reflective film and further layer to be etched, using the photoresist pattern as an etch mask; and (D) a semi conductor device fabricated with the help of the antireflective film pattern. EA (CN1288901-A) NOVELTY - Polymeric organic esters with omega hydroxy functional groups are new. USE - The anti-reflective film is useful in submicrolithiography using argon fluoride (ArF) laser (193 nm). ADVANTAGE - The antireflective film is not affected by the photoresist solution and prevents the scattering of light, hence reducing the standing wave effect. This allows patterns to be formed in a well-defined, ultrafine configuration, contributing greatly to the high integration of semiconductor devices. (FR2798130-A1) NOVELTY - Polymeric organic esters with omega hydroxy functional groups are new. USE - The anti-reflective film is useful in submicrolithiography using argon fluoride (ArF) laser (193 nm). ADVANTAGE - The antireflective film is not affected by the photoresist solution and prevents the scattering of light, hence reducing the standing wave effect. This allows patterns to be formed in a well-defined, ultrafine configuration, contributing greatly to the high integration of semiconductor devices. (JP2001158810-A) NOVELTY - Polymeric organic esters with omega hydroxy functional groups are new. USE - The anti-reflective film is useful in submicrolithiography using argon fluoride (ArF) laser (193 nm). ADVANTAGE - The antireflective film is not affected by the photoresist solution and prevents the scattering of light, hence reducing the standing wave effect. This allows patterns to be formed in a well-defined, ultrafine configuration, contributing greatly to the high integration of semiconductor devices. TF TECHNOLOGY FOCUS - POLYMERS - Preferred Composition: The antireflective film composition further comprises (wt.%) a heat acid generator (0.1 - 1) and an organic solvent (2000 - 4000) based on the weight of (I) or (II).Preferred Compound: The hydroxy esters of formula (I) have a molecular weight from 4000 - 15,000.Preferred Process: The baking step is carried out at 100 - 250 degreesC for 1 - 5 minutes. The method further comprises a second baking step (preferably at 70 - 200 degreesC) prior to and/or subsequent to the exposing step. The exposing step is conducted under a light source selected from deep ultra violet beams (including ArF, KrF and Euv), an electron beam, an x-ray and/or ion-beam. The energy of the light source is 0.1 - 20 mJ/cm2. TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Component: The solvent used in the preparation of (I) is selected from tetrahydrofuran, toluene, benzene, methylethylketone and/or dioxane and the solvent used as in component for the anti-reflective composition is selected from methyl 3-methoxypropionate, ethyl 3-ethoxypropionate, propyleneglycol, methyletheracetate, tetrahydrofuran and/or 2-heptanone. The monomer used for preparation of (1) is selected from styrene, 2-hydroxy ethyl acrylate or 3-hydroxy ethyl acrylate. The acid generator is selected from 2-hydroxy cyclohexyl triflate, 2-hydroxycyclopentyl triflate, 2-hydroxy-3-vinyl cyclohexyl triflate, 2-hydro cyclohexyl para-toluene sulfonate or N-triflate phthalimide.Preferred Initiator: The initiator used for polymerization is selected from 2,2-azobisisobutyronitrile, benzoyl peroxide, acetyl peroxide, lauryl peroxide and/or tert-butyloxide. Preferred Definitions: R = H; and R4 = (CH2)2 or (CH2)3. EXAMPLE - Hydroxy ester (21 g; obtained by polymerization of mole equivs. styrene and 2-hydroxyethyl acrylate) and polymeric dimethyl ether (14 g) were dissolved in propylene glycol methyl ether acetate (1050 g). To this was added 2-hydroxy cyclohexyl triflate (0.35 g) and the solution filtered to form an antireflective composition which was spin coated onto a silicon wafer and baked at 205 degreesC for 2 minutes. On the baked film was coated DHA1001 (photosensitive agent) and the coated film rebaked at 110 degreesC for 90 seconds. The multicoated wafer was exposed using ArF microstepper followed by another baking process at 110 degreesC for 90 seconds. The wafer was developed with methylammonium hydroxide solution (2.38 wt.%) and was found to have well-defined perpendicular patterns. DC A97 (Miscellaneous goods not specified elsewhere); A13 (Aromatic mono-olefins, including polystyrene); A14 (Other substituted mono-olefins, PVC, PTFE); G05 (Printing materials and processes); L03 (Electro-(in)organic, chemical features of electrical devices); P84 (Other photographic); U11 (Semiconductor Materials and Processes) MC A04-C04; A04-F06E4; A04-F11; A08-C08; A11-B05D; A12-E07C; A12-L02F; G06-A; G06-D06; G06-E02; G06-E04; G06-G; G06-G18; L04-C26; U11-C04A1H IP C08F-212/08; C08F-220/26; G03F-007/09; C08F-012/06; C08L-025/04; G03F-007/00; C08F-220/28; C08K-005/42; C08L-025/08; C08L-033/14; H01L-023/552; H01L-031/0232; C08L-29:14; C08F-002/06; C08F-004/04; C08L-025/14; C08L-029/10; C09D-125/14; C09D-133/06; C09D-005/00; C09K-003/00; G02B-001/11; G03F-007/004; H01L-021/027; C07C-053/00; C07C-031/20; C08F-118/00; C08F-216/34 PD GB2354005-A 14 Mar 2001 C08F-212/08 200140 Pages: 27 English CN1288901-A 28 Mar 2001 C08F-012/06 200140 Chinese FR2798130-A1 09 Mar 2001 C08F-220/28 200140 French JP2001158810-A 12 Jun 2001 C08F-212/08 200149 Pages: 9 Japanese KR2001026524-A 06 Apr 2001 C07C-053/00 200160 US2003100695-A1 29 May 2003 C08F-118/00 200337 English GB2354005-B 25 Jun 2003 C08F-212/08 200341 English US6770720-B2 03 Aug 2004 C08F-216/34 200451 English CN1280316-C 18 Oct 2006 C08F-012/06 200716 Chinese TW249538-B1 21 Feb 2006 C08F-212/08 200716 Chinese KR574482-B1 27 Apr 2006 C07C-053/00 200724 JP4102010-B2 18 Jun 2008 G02B-001/11 200841 Pages: 13 Japanese AD GB2354005-A GB021862 06 Sep 2000 CN1288901-A CN131747 07 Sep 2000 FR2798130-A1 FR011420 07 Sep 2000 JP2001158810-A JP271787 07 Sep 2000 KR2001026524-A KR037877 07 Sep 1999 US2003100695-A1 US313480 04 Dec 2002 US6770720-B2 US313480 04 Dec 2002 CN1280316-C CN131747 07 Sep 2000 TW249538-B1 TW118505 08 Sep 2000 KR574482-B1 KR037877 07 Sep 1999 JP4102010-B2 JP271787 07 Sep 2000 FD US2003100695-A1 Cont of Application US657085 US6770720-B2 Cont of Application US657085 KR574482-B1 Previous Publ. Patent KR2001026524 JP4102010-B2 Previous Publ. Patent JP2001158810 PI KR037877 07 Sep 1999 FS 430/270.1; 430/325; 526/266; 526/271; 526/319; 526/320; 526/328; 526/328.5; 526/329.2; 526/329.6; 526/329.7 CP GB2354005-A EP987600-A1 SHIPLEY CO LLC (SHIL) ADAMS T G, PAVELCHEK E K, SINTA R F, DOCANTO M, BLACKSMITH R F, TREFONAS P JP55050355-A FR2798130-A1 EP197460-A EP225809-A EXXON RES & ENG CO (ESSO) YEZRIELEV A I, ROMANELLI M G, WELLMAN W E FR2387249-A GB2354005-B EP987600-A1 SHIPLEY CO LLC (SHIL) ADAMS T G, PAVELCHEK E K, SINTA R F, DOCANTO M, BLACKSMITH R F, TREFONAS P JP55050355-A US6770720-B2 EP277038-A JP10101999-A JP11350254-A JP60036504-A US4046577-A US4304703-A US4424270-A HOECHST AG (FARH) ERDMANN F, SIMON U US4485193-A DOW CHEM CO (DOWC) RUBENS L C, ALEANDER W E US4604426-A US4822718-A BREWER SCIENCE INC (BREW-Non-standard) BARNES G A, BREWER T L, FLAIM T D, MOSS M G US5492959-A US5674648-A BREWER SCI INC (BREW-Non-standard) US5916972-A FRAUNHOFER GES FOERDERUNG (FRAU) ECK W, CANTOW H, WITTWER V US5977201-A BASF AG (BADI) JAHNS E, KROENER H, SCHROF W, KLODWIG U US6294607-B1 US6379769-B1 WO2000001752-A1 JP4102010-B2 JP08259623-A JP2002522576-W CR GB2354005-A Proc-SPIE Int. Soc. Opt. Eng.(1999), 3678, 702-712, Trefonaset al GB2354005-B Proc-SPIE Int. Soc. Opt. Eng.(1999), 3678, 702-712, Trefonaset al DN 368-0-0-0-; 61793-0-0-0-; 135181-0-0-0-; 192-0-0-0-; 79-0-0-0-; 129633-0-0-0-; 326-0-0-0-; 131213-0-0-0-; 19-0-0-0-; 26-0-0-0-; 8-0-0-0-; 37-0-0-0-; 30-0-0-0-; 131510-0-0-0- CI R00708-; R01454-; R24023-; R00426-; R00610-; R05235-; R00389-; R10247-; R00895-; R00862-; R00306-; R00437-; R01057-; R08574- UT DIIDW:2001377044 ER PT P PN JP2000347406-A TI Resist pattern formation method for semiconductor device manufacture, involves dry etching heated resist film using mask, after introducing silicon to its exposed area. AE HANDOTAI SENTAN TECHNOLOGIES KK (HAND-Non-standard) GA 2001293856 AB NOVELTY - An acid unstable group homopolymer resist film on substrate (1), is exposed to energy beam (4) through a mask. The film is heated and exposed to water atmosphere. Then, silicon is introduced into the exposed area for silylating the resist film. The silylated area is dry etched using mask, to form the resist pattern. USE - For manufacturing semiconductor devices. ADVANTAGE - Forms favorable pattern with high precision. Hence industrial value is improved. DETAILED DESCRIPTION - The energy beam irradiated on the resist film, includes krypton fluoride (KrF) or argon fluoride (ArF) laser radiation, light with wavelength of 5-180 nm, electron beam or X-ray beam. Water coat application or water vapor spraying is done on the resist film, for exposing it to water atmosphere. Silylation of resist film is done in gaseous or liquid phase atmosphere using silylating agent such as dimethyl silyl dimethylamine, dimethyl silyl diethylamine or dimethylamino dimethyl disilane. An INDEPENDENT CLAIM is also included for semiconductor device manufacturing method which involves dry etching of semiconductor substrate through resist pattern. DESCRIPTION OF DRAWING(S) - The figure shows the sectional view of resist pattern formation. Substrate (1) Energy beam (4) DC A89 (Photographic, laboratory equipment, optical); G06 (Photosensitive compositions and bases, photographic processes); L03 (Electro-(in)organic, chemical features of electrical devices); P84 (Other photographic); U11 (Semiconductor Materials and Processes) MC A10-E22A; A12-E07C; A12-L02B2; G06-D06; G06-E02; G06-F03; G06-G17; L04-C06B; L04-C07B; U11-C04A1B; U11-C04E1; U11-C04F1; U11-C04H1; U11-C07A1; U11-C07D1 IP G03F-007/039; G03F-007/36; G03F-007/38; H01L-021/027 PD JP2000347406-A 15 Dec 2000 G03F-007/039 200131 Pages: 5 AD JP2000347406-A JP155512 02 Jun 1999 PI JP155512 02 Jun 1999 DN 107015-0-0-0-USE UT DIIDW:2001293856 ER PT P PN JP2001042111-A TI Optical element for semiconductor device manufacture has diffraction optical element formed on quartz substrate in which various relationships are satisfied involving diameter and thickness of element. AE CANON KK (CANO-C) GA 2001285707 AB NOVELTY - Optical element has a diffraction optical element formed on a quartz substrate. Three specified relationships are satisfied. Various lasers are used which operate at different wavelengths affecting the values in the equations below. USE - The element is used in a semiconductor exposure system, a camera, a telescope and a microscope. ADVANTAGE - Deformation due to atmospheric pressure or temperature variation and surface deformations do not occur. Precise semiconductor devices can be produced. DETAILED DESCRIPTION - The relationships of log(3.1139 x 10 Power(-2)) is at least -2.4025.10 Power(-1)x3 - 2.771.10 Power(-1)x2 - 2.0525x - 2.1143.10-1, 2.321.1063NA2/M is at least t, and 2.8675.106/a2 is at least t are satisfied a (mm) = the diameter of the diffraction optical element using argon fluoride laser light of wavelength 193 nm; t (mm) = thickness; M = optical element number; NA = openings number; n = log(22500t/a2). INDEPENDENT CLAIMS are also included for: (1) an optical system which uses the optical element; (2) a device which uses the optical system; (3) a semiconductor device manufacture method using this device; and (4) the semiconductor device manufactured. DESCRIPTION OF DRAWING(S) - The drawing shows the diffraction model diagram of the optical element. substrate (21) resist (22) hot plate (23) plate board (24) reticle (25) wafer chuck (26) projecting section (27) resist pattern (28) DC L03 (Electro-(in)organic, chemical features of electrical devices); P81 (Optics); V07 (Fibre-optics and Light Control) MC L03-G02; V07-F02B IP G02B-005/18 PD JP2001042111-A 16 Feb 2001 G02B-005/18 200130 Pages: 11 AD JP2001042111-A JP212848 27 Jul 1999 PI JP212848 27 Jul 1999 UT DIIDW:2001285707 ER PT P PN JP2001035774-A; JP3179068-B2 TI Pattern formation method for semiconductor device manufacture, involves sililating exposed resist film after deprotecting hydroxyl group of homopolymer resin by acid treatment. AE HANDOTAI SENTAN TECHNOLOGIES KK (HAND-Non-standard) GA 2001285573 AB NOVELTY - Chemical amplification type positive mold resist film (2) has homopolymer of protective group exposed to preset energy beam (4). The hydroxyl group of homopolymer resin is deprotected by acid treatment on exposed resist film. The resist film is then sylilized to introduce silicone into exposed portion and is dry etched through mask to form a desired pattern. USE - For manufacturing semiconductor device. ADVANTAGE - Forms semiconductor device resist patterns with high accuracy. DETAILED DESCRIPTION - A chemical amplification type positive mold resist film (2) is formed on a substrate (1). A predetermined energy beam such as krypton fluoride (KrF) or argon fluoride (ArF) laser radiation, electron beam, X-ray beam or light beam of wavelength 5-180 nm approximately is irradiated through a mask having desired pattern to the resist film through exposure portion. Then the exposed resist film is heated on predetermined conditions and after acid treatment of exposed resist film, the resist film is sylilized in gaseous or liquid phase using sililation reagent like dimethyl silyl dimethylamine, dimethyl silyl diethylamine or dimethylamino dimethyl disilane to form sililating layer (7) and a silicone is introduced into the exposed portion of resist film. DESCRIPTION OF DRAWING(S) - The figure shows the sectional view of pattern formation method. Substrate (1) Resist film (2) Energy beam (4) Sililating layer (7) EA (JP3179068-B2) NOVELTY - Chemical amplification type positive mold resist film (2) has homopolymer of protective group exposed to preset energy beam (4). The hydroxyl group of homopolymer resin is deprotected by acid treatment on exposed resist film. The resist film is then sylilized to introduce silicone into exposed portion and is dry etched through mask to form a desired pattern. USE - For manufacturing semiconductor device. ADVANTAGE - Forms semiconductor device resist patterns with high accuracy. TF TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - The resist film used is chemical amplification type positive mold resist film having homopolymer of protective group. The sililating reagent used for sililizing resist film is dimethyl silyl dimethylamine, dimethyl silyl diethylamine or dimethylamino dimethyl disilane. DC L03 (Electro-(in)organic, chemical features of electrical devices); P84 (Other photographic); U11 (Semiconductor Materials and Processes) MC L04-C06B; U11-C04A1C; U11-C04E1 IP G03F-007/039; G03F-007/38; G03F-007/40; H01L-021/027 PD JP2001035774-A 09 Feb 2001 H01L-021/027 200130 Pages: 6 JP3179068-B2 25 Jun 2001 H01L-021/027 200138 Pages: 5 AD JP2001035774-A JP205283 19 Jul 1999 JP3179068-B2 JP205283 19 Jul 1999 FD JP3179068-B2 Previous Publ. Patent JP2001035774 PI JP205283 19 Jul 1999 FS x CP JP3179068-B2 JP2047659-A TOSHIBA KK (TOKE) ITO S, OKANO H, NAKASE M JP5021333-A HITACHI LTD (HITA) JP6186754-A MITSUBISHI ELECTRIC CORP (MITQ) JP7104483-A HITACHI LTD (HITA) JP8076385-A MATSUSHITA ELEC IND CO LTD (MATU) MATSUO T, YAMASHITA K, ENDO M, SASAGO M JP8220777-A HITACHI LTD (HITA) JP9230606-A MATSUSHITA ELEC IND CO LTD (MATU) MATSUO T, YAMASHITA K, ENDO M, SASAGO M JP9312247-A HITACHI LTD (HITA) UT DIIDW:2001285573 ER PT P PN WO200106318-A; WO200106318-A1; JP2001027798-A; DE10082309-T; US2002009653-A1; KR2001075069-A; US7090947-B2; KR510309-B; US2007009810-A1; US7282308-B2; JP4163331-B2; DE10082309-B4 TI Phase shifter film used in phase shifter masks for semiconductor device production is formed using reactive long throw sputtering device. AU KAWADA S ISAO A YOSHIOKA N MAETOKO K AE ULVAC COATING CORP (ULVA-C) MITSUBISHI DENKI KK (MITQ-C) ULVAC SEIMAKU KK (ULVA-C) MITSUBISHI ELECTRIC CORP (MITQ-C) ULVAC COATING CORP (ULVA-C) MITSUBISHI DENKI KK (MITQ-C) ULVAC COATING CORP (ULVA-C) RENESAS TECHNOLOGY CORP (RENE-C) ULVAC COATING CORP (ULVA-C) RENESAS TECHNOLOGY CORP (RENE-C) ULVAC SEIMAKU KK (ULVA-C) RENESAS TECHNOLOGY KK (RENE-C) ULVAC COATING CORP (ULVA-C) MITSUBISHI DENKI KK (MITQ-C) GA 2001138490 AB NOVELTY - Phase shifter film used in phase shifter masks is formed using a reactive long throw sputtering device. USE - The phase shifter mask is used in the production semiconductor devices. ADVANTAGE - A half-tone type phase shifter mask is provided which is compatible with an argon fluoride laser or potassium fluoride laser. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) the manufacture of the phase shifter film; (2) blanks for phase shifter masks having a transparent substrate and a phase shifter mask; (3) the manufacture of blanks for phase shifter masks by forming a phase shifter mask on a transparent substrate; (4) a phase shifter mask comprising a transparent substrate and a phase shifter film having a fixed exposed pattern; (5) the manufacture of the phase shifter mask; (6) an exposure method using the phase shifter mask; (7) a semiconductor device manufactured using the phase shifter mask; (8) a defect inspection method of phase shifter masks; and (9) a defect correction method of the phase shifter mask. EA (JP2001027798-A) NOVELTY - Phase shifter film used in phase shifter masks is formed using a reactive long throw sputtering device. USE - The phase shifter mask is used in the production semiconductor devices. ADVANTAGE - A half-tone type phase shifter mask is provided which is compatible with an argon fluoride laser or potassium fluoride laser. TF TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Phase Shifter Mask: The phase shifter mask is heat treated at 200 degrees C or above, and comprises an oxynitride of molybdenum silicide. TECHNOLOGY FOCUS - CHEMICAL ENGINEERING - Preferred Sputtering Device: The reactive long throw sputtering device separates and introduces the reactive gas and inactive gas. The reactive gas is introduced to the substrate side and the inactive gas is introduced to the target side. The reactive long throw sputtering device has a pressure of 0.75 Torr, a separation of target and substrate of at least 100 mm, and a flow ratio of reactive gas and inactive gas of 50-80%. DC L03 (Electro-(in)organic, chemical features of electrical devices); P84 (Other photographic); U11 (Semiconductor Materials and Processes); P83 (Photographic processes, compositions) MC L04-C06A; U11-C04A1B; U11-C04E1 IP C23C-014/34; G03F-001/08; C23C-014/06; H01L-021/027; H01L-021/306; C23C-014/00; C23C-014/32; C23C-016/00; G03C-005/00; G03F-009/00; G06K-009/00; H01L-021/44; G01F-009/00; G03F-001/00; H01L-021/02; G03F-001/14 PD WO200106318-A WO200106318-A1 25 Jan 2001 G03F-001/08 200114 Pages: 52 Japanese JP2001027798-A 30 Jan 2001 G03F-001/08 200122 Pages: 19 DE10082309-T 04 Oct 2001 200158 US2002009653-A1 24 Jan 2002 C23C-016/00 200210 KR2001075069-A 09 Aug 2001 H01L-021/027 200211 US7090947-B2 15 Aug 2006 G01F-009/00 200654 English KR510309-B 26 Aug 2005 H01L-021/027 200662 US2007009810-A1 11 Jan 2007 C23C-014/00 200706 English US7282308-B2 16 Oct 2007 G03F-001/00 200768 English JP4163331-B2 08 Oct 2008 G03F-001/08 200868 Pages: 27 Japanese DE10082309-B4 26 Feb 2009 G03F-001/14 200916 German AD WO200106318-A1 WOJP04709 13 Jul 2000 JP2001027798-A JP199941 14 Jul 1999 DE10082309-T DE1082309 13 Jul 2000 US2002009653-A1 US804158 13 Mar 2001 KR2001075069-A KR703214 13 Mar 2001 US7090947-B2 US804158 13 Mar 2001 KR510309-B KR703214 13 Mar 2001 US2007009810-A1 US477425 30 Jun 2006 US7282308-B2 US477425 30 Jun 2006 JP4163331-B2 JP199941 14 Jul 1999 DE10082309-B4 DE1082309 13 Jul 2000 FD DE10082309-T Based on Patent WO200106318 DE10082309-T PCT application Application WOJP04709 US2002009653-A1 Cont of Application WOJP04709 US7090947-B2 Cont of Application WOJP04709 KR510309-B Based on Patent WO200106318 KR510309-B Previous Publ. Patent KR2001075069 KR510309-B PCT application Application WOJP04709 US2007009810-A1 Cont of Application WOJP04709 US2007009810-A1 Div ex Application US804158 US2007009810-A1 Div ex Patent US7090947 US7282308-B2 Cont of Application WOJP04709 US7282308-B2 Div ex Application US804158 US7282308-B2 Div ex Patent US7090947 JP4163331-B2 Previous Publ. Patent JP2001027798 DE10082309-B4 PCT application Application WOJP04709 DE10082309-B4 Based on Patent WO200106318 PI JP199941 14 Jul 1999 DS WO200106318-A1: (National): DE; KR; US FS x CP WO200106318-A JP6258817-A TOPPAN PRINTING CO LTD (TOPP) JP8127870-A JP11021669-A US5605776-A US5614335-A DAINIPPON PRINTING CO LTD (NIPQ) HASHIMOTO K, FUJIKAWA J, MORI H, TAKAHASHI M, MIYASHITA H, IIMURA Y WO200106318-A1 JP6258817-A TOPPAN PRINTING CO LTD (TOPP) JP8127870-A JP11021669-A US5605776-A US5614335-A DAINIPPON PRINTING CO LTD (NIPQ) HASHIMOTO K, FUJIKAWA J, MORI H, TAKAHASHI M, MIYASHITA H, IIMURA Y US7090947-B2 EP692551-A1 APPLIED MATERIALS INC (MATE-Non-standard) XU Z JP5285327-A JP6258817-A TOPPAN PRINTING CO LTD (TOPP) JP8074031-A ULVAC SEIMAKU KK (ULVA); MITSUBISHI ELECTRIC CORP (MITQ) TOKU A, KAWADA M, SAITO Y, YAMAMOTO T, HAYASHI A, YOSHIOKA N, CHIBA A, MIYAZAKI J JP8127870-A JP8262688-A JP11021669-A US5322605-A MATSUSHITA ELEC IND CO LTD (MATU) US5474864-A ULVAC COATING CORP (ULVA); MITSUBISHI DENKI KK (MITQ) ISAO A, KOBAYASHI R, YOSHIOKA N, WATAKABE Y, MIYAZAKI J US5482799-A US5605776-A US5614335-A DAINIPPON PRINTING CO LTD (NIPQ) HASHIMOTO K, FUJIKAWA J, MORI H, TAKAHASHI M, MIYASHITA H, IIMURA Y US5635315-A HOYA CORP (HOYA) MITSUI M US5725739-A US5728494-A US5804337-A US5863393-A US5897976-A US5897977-A US5938897-A ULVAC SEIMAKU KK (ULVA); MITSUBISHI ELECTRIC CORP (MITQ) TOKU A, KAWADA M, SAITO Y, YAMAMOTO T, HAYASHI A, YOSHIOKA N, CHIBA A, MIYAZAKI J US5939225-A US5939925-A US5942356-A HOYA CORP (HOYA) US5952128-A ULVAC SEIMAKU KK (ULVA); MITSUBISHI ELECTRIC CORP (MITQ) TOKU A, KAWADA M, SAITO Y, YAMAMOTO T, HAYASHI A, YOSHIOKA N, CHIBA A, MIYAZAKI J US5955223-A US6087047-A HOYA CORP (HOYA) MITSUI H, NOZAWA O, TAKEUCHI M US6139698-A US6140236-A US6309780-B1 US6458255-B2 APPLIED MATERIALS INC (MATE-Non-standard) CHIANG T, DING P, CHIN B US7282308-B2 EP692551-A1 APPLIED MATERIALS INC (MATE-Non-standard) XU Z JP5285327-A JP6258817-A TOPPAN PRINTING CO LTD (TOPP) JP8074031-A ULVAC SEIMAKU KK (ULVA); MITSUBISHI ELECTRIC CORP (MITQ) TOKU A, KAWADA M, SAITO Y, YAMAMOTO T, HAYASHI A, YOSHIOKA N, CHIBA A, MIYAZAKI J JP8127870-A JP8262688-A JP11021669-A US5322605-A MATSUSHITA ELEC IND CO LTD (MATU) US5474864-A ULVAC COATING CORP (ULVA); MITSUBISHI DENKI KK (MITQ) ISAO A, KOBAYASHI R, YOSHIOKA N, WATAKABE Y, MIYAZAKI J US5482799-A US5605776-A US5614335-A DAINIPPON PRINTING CO LTD (NIPQ) HASHIMOTO K, FUJIKAWA J, MORI H, TAKAHASHI M, MIYASHITA H, IIMURA Y US5635315-A HOYA CORP (HOYA) MITSUI M US5725739-A US5728494-A US5804337-A US5863393-A US5897976-A US5897977-A US5938897-A ULVAC SEIMAKU KK (ULVA); MITSUBISHI ELECTRIC CORP (MITQ) TOKU A, KAWADA M, SAITO Y, YAMAMOTO T, HAYASHI A, YOSHIOKA N, CHIBA A, MIYAZAKI J US5939225-A US5939925-A US5942356-A HOYA CORP (HOYA) US5952128-A ULVAC SEIMAKU KK (ULVA); MITSUBISHI ELECTRIC CORP (MITQ) TOKU A, KAWADA M, SAITO Y, YAMAMOTO T, HAYASHI A, YOSHIOKA N, CHIBA A, MIYAZAKI J US5955223-A US6087047-A HOYA CORP (HOYA) MITSUI H, NOZAWA O, TAKEUCHI M US6139698-A US6140236-A US6309780-B1 US6458255-B2 APPLIED MATERIALS INC (MATE-Non-standard) CHIANG T, DING P, CHIN B JP4163331-B2 JP1132122-A JP5065642-A MATSUSHITA ELEC IND CO LTD (MATU) JP6258817-A TOPPAN PRINTING CO LTD (TOPP) JP7043887-A DAINIPPON PRINTING CO LTD (NIPQ) HASHIMOTO K, FUJIKAWA J, MORI H, TAKAHASHI M, MIYASHITA H, IIMURA Y JP7168343-A JP7239546-A JP8074031-A ULVAC SEIMAKU KK (ULVA); MITSUBISHI ELECTRIC CORP (MITQ) TOKU A, KAWADA M, SAITO Y, YAMAMOTO T, HAYASHI A, YOSHIOKA N, CHIBA A, MIYAZAKI J JP8127870-A JP8262688-A JP9080740-A JP10073913-A JP10148929-A HOYA CORP (HOYA) JP11021669-A US5635315-A HOYA CORP (HOYA) MITSUI M US5725739-A DE10082309-B4 EP692551-A1 APPLIED MATERIALS INC (MATE-Non-standard) XU Z JP11021669-A US5474864-A ULVAC COATING CORP (ULVA); MITSUBISHI DENKI KK (MITQ) ISAO A, KOBAYASHI R, YOSHIOKA N, WATAKABE Y, MIYAZAKI J US5482799-A US5804337-A US5897976-A CR US7090947-B2 "Conducting polymers in microelectronics", Marie Angelopoulos, Handbook of Conducting Polymers, Marcel Dekker, NY, 1998, pp. 921-944. "Long-throw, low pressure sputtering technology for very large-scale integrated evices", N.Motegi et al. , J.Vac.Sci.Technol., B v13,(1995), pp. 1906-1909. D.Konpka et al.; Bipolar pulsed DC sputtering of Optical Films; Soc.Vac Coaters, Conf.Procs (1999); p. 217-222. Motegi et al. : "Long throw low pressure sputtering technology for very large scale integrated devices"; Jl.Vac.Sc.Tech. B, v13(1995),pp. 1906-1909. Tom Smy et al.; "A simulation study of long throw sputtering . . . "; IEEE Trans, Elec.Dev.; v45 (1998);p. 1414-1425. US7282308-B2 D. Konpka et al.; Bipolar pulsed DC sputtering of Optical Films; Soc. Vac. Coaters, Conf. Procs (1999); p. 217-222. Marie Angelopoulos, "Conducting polymers in microelectronics", Handbook of Conducting Polymers, Marcel Dekker, NY, 1998, pp. 921-944. Motegi et al.: "Long throw low pressure sputtering technology for very large scale integrated devices"; Jl. Vac. Sc. Tech. B, v13 (1995), pp. 1906-1909. Tom Smy et al.; "A simulation study of long throw sputtering . . . "; IEEE Trans., Elec. Dev.: v45 (1998);p. 1414-1425. UT DIIDW:2001138490 ER PT P PN US6162577-A TI Photoresist composition for extreme ultraviolet lithography particularly useful for producing gate apertures. AU KUBIAK G D FELTER T E AE FELTER T E (FELT-Individual) KUBIAK G D (KUBI-Individual) GA 2001101641 AB NOVELTY - The composition contains boron carbide, vanadium oxide, molybdenum oxide and/or organotitanates. USE - For producing submicron features on a substrate. A patterned array of submicron apertures and other structures can be formed on a semiconductor material e.g. silicon as well as metals and dielectrics. ADVANTAGE - The printing rate is increased by employing a patterned array and a single exposure. The photoresist has enhanced transparency to 13 nm radiation. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method involving applying the composition to a substrate and forming a film of thickness 100-250 nm. The photoresist is exposed to a source of electromagnetic radiation of radiation below 20 nm, and developed in nitric acid. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic of an extreme ultraviolet light imaging system. Imaging system (100) Plasma source (105) Condenser (110) Turning mirror (115) Translating reflective object mask (120) Schwarzschild camera (125) Photoresist coated wafer (130) TF EXAMPLE - A patterned array of gates, useful for field emitter array, was produced using EUV lithography. A 120 Watt KrF excimer laser was used to produce 0.6 Joule pulses having 25 ns duration at a maximum repetition rate of 200 Hz, and was focused to achieve an intensity of 1-2 x 1012 Watts /cm2 on a gold target. The extreme UV radiation produced was collected by a condenser to provide a 5 mm Kohler-illuminated spot on a mask . The resulting image was magnified by 13.3 times. The Schwarzschild camera was optimized to achieve 0.1 microm resolution over a 0.4 mm diameter field of view. A special sandwich structure silicon target wafer was formed comprising a 0.2 microm thick molybdenum layer covering a 0.6microm silicon oxide layer on top of the silicon substrate. The molybdenum layer was spin coated with a 110 nm thick layer of ZEP resist (commercially available from Nippon Zeon). The resist was then pre-baked at 200degreesC for 2 minutes, cooled and then exposed to the gate array EUV image using the Scharzschild camera. After exposure the resist was developed in xylenes for 5 minutes and rinsed in a mixture of isopropanol and methyl isobutyl ketone. DC G06 (Photosensitive compositions and bases, photographic processes); L03 (Electro-(in)organic, chemical features of electrical devices); P84 (Other photographic); U11 (Semiconductor Materials and Processes) MC G06-D06; G06-E04; G06-F04; G06-G; G06-G18; L04-C05; U11-C04E1; U11-C05E2; U11-C05F1 IP G03F-007/004 PD US6162577-A 19 Dec 2000 G03F-007/004 200111 Pages: 8 AD US6162577-A US158943 21 Sep 1998 FD US6162577-A Div ex Patent US6007963 US6162577-A Div ex Application US877031 US6162577-A Cont of Application US532958 PI US532958 21 Sep 1995 US158943 21 Sep 1998 FS 430/270.1; 430/326 CP US6162577-A US3665241-A US3755704-A US3789471-A US3812559-A US4515883-A RICOH KK (RICO) SASAKI M US4588801-A US5003567-A US DEPT ENERGY (USAT); UNIV CALIFORNIA (REGC); HAWRYLUK A M (HAWR-Individual) HAWRYLUK A M, SEPPALA L G US5039593-A US5064396-A US5291339-A US5380621-A US5401614-A US5482817-A US5554485-A CR US6162577-A Kubiak, G. D., "XUV Resist Characterization: Studies With A Laser Plasma Source" Proc. SPIE-Int. Soc. Opt. Eng. (1991) pp. 283-291. Kubiak, et al., "Soft X-ray Resist Characterization: Studies With A Laser Plasma X-ray Source" Proc. SPIE-Int. Soc. Opt. Eng. (1990) pp. 272-281. Microelectronic Engineering, 21 (1993) 467-470 Elsevier Peters, D. et al. "Fabrication of 0.4 um grid apertures for field-emission array cathodes". UT DIIDW:2001101641 ER PT P PN GB2352049-A; JP2000347413-A; KR2000073111-A; US6319654-B1; TW477917-A; GB2352049-B; JP3732715-B2; KR520670-B TI Process of forming photoresin pattern, involves coating photoresist composition on substrate to form photoresist film which is exposed to light, subjecting the film to silylation and developing to form pattern. AU KIM M S JUNG J C KIM H G BAIK K H CHUNG J C BAEK G H JUNG J BAIK K AE HYUNDAI ELECTRONICS IND CO LTD (HYNX-C) HYUNDAI ELECTRONICS IND CO LTD (HYNX-C) HYNIX SEMICONDUCTOR INC (HYNX-C) GA 2001094485 AB NOVELTY - A process for forming a photoresist pattern comprises: (1) preparing a chemical amplification-type photoresist composition; (2) coating the photoresist composition on semiconductor substrate to form photoresist film; (3) exposing the film to light; (4) subjecting to silylation to form silicon oxide film pattern on the exposed photoresist film; (5) developing the film to form a pattern; and (6) etching the substrate using silicon oxide film as etching mask. USE - For forming photoresist pattern. ADVANTAGE - The photoresist composition has good heat resistance so as to endure post exposure baking and silylation process which are performed at high temperature. The pattern formed with the photoresist composition has higher integrity and stronger crosslinking characteristics. DETAILED DESCRIPTION - A process for forming a photoresist pattern comprises: (1) preparing a chemical amplification-type photoresist composition, comprising a cross linker, a photoacid generator and a photoresist polymer in a solvent; (2) coating the photoresist composition on semiconductor substrate to form photoresist film; (3) exposing the film to light; (4) subjecting to silylation to form silicon oxide film pattern on the exposed photoresist film; (5) developing the film to form a pattern; and (6) etching the substrate using silicon oxide film as etching mask. The crosslinking agent present in the photoresist composition is ether derivative of formulae (I) and (II). R1, R2, R5, R6 and R = 1-10C alkyl, 1-10C ester, 1-10C ketone, 1-10C carboxylic acid, 1-10C acetal or 1-10C alkyl and all the groups contain at least one hydroxy group; R3, R7 = hydrogen or methyl; m = 0 or 1; n = 1-5 An INDEPENDENT CLAIM is also included for semiconductor element which is manufactured by using photoresist composition. EA (JP2000347413-A) NOVELTY - A process for forming a photoresist pattern comprises: (1) preparing a chemical amplification-type photoresist composition; (2) coating the photoresist composition on semiconductor substrate to form photoresist film; (3) exposing the film to light; (4) subjecting to silylation to form silicon oxide film pattern on the exposed photoresist film; (5) developing the film to form a pattern; and (6) etching the substrate using silicon oxide film as etching mask. USE - For forming photoresist pattern. ADVANTAGE - The photoresist composition has good heat resistance so as to endure post exposure baking and silylation process which are performed at high temperature. The pattern formed with the photoresist composition has higher integrity and stronger crosslinking characteristics. TF TECHNOLOGY FOCUS - IMAGING AND COMMUNICATION - Preferred Agent: The crosslinking agent is homopolymer or copolymer of monomer of formula (I) or (II). Alternatively, the crosslinking agent is selected from group of formulae (III) to (XX).a, b = relative amounts of each comonomerPreferred Concentration: The ratio of a:b is 10-100 mol%: 0-90 mol% in compounds with formula (V) and (VII). The ratio of a:b is 10-90 mol% - 10-90 mol% in the compounds of formula (VI) and (VIII). Preferred Condition: The soft baking process after coating the photoresist composition on the surface of semiconductor element to form photoresist film is performed at 90-180degreesC for 30-300 sec to remove the solvent. The presilylation baking process is performed at 90-250degreesC for 30-300 sec to cure the photoresist. The silylation process is performed with liquid or gaseous phase silylation agent.Preferred Silylation Agent: The silylation agent is hexamethyl disilazane, tetramethyl disilazane, bisdimethylamino (di)methylsilane, bisdimethylamino methylsilane, dimethylsilyl di(m)ethylamine, trimethylsilyl di(m)ethylamine or dimethylamino pentamethyldisilane.Preferred Method: The exposing of photoresist film to light is carried out using laser source such as argon fluoride, krypton fluoride, EUV, electron beam or X-ray radiation. The developing of photoresist film is performed by dry development for 1-100 sec with mixture of gases comprising fluorine or chlorine and oxygen. The nondeveloping area is dry developed for 10-500 sec with gaseous mixture of oxygen or carbon dioxide.Preferred Polymer: The polymer is poly(hydroxy styrene), poly(dichloro hydroxy styrene), poly(hydroxy methylate hydroxy styrene), poly(hydroxy styrene/dichloro hydroxy styrene) or poly(hydroxy styrene/dichloro hydroxy styrene/hydroxy methylate hydroxy styrene). EXAMPLE - 10 g of poly(hydroxy styrene), photoresist polymer, 6 g of poly(3,3'-dimethoxy propene) and crosslinking agent were dissolved in 64 g of methyl 3-methoxypropionate solvent. Subsequently, 0.32 g of triphenylsulfonium triflate, photoacid generator was added. The mixture was stirred, filtered with 0.10 mum filter to provide a photoresist composition for silylation process. The composition was coated on a substrate, baked and exposed to patterned light by employing ArF laser exposure. Presilylation baking process was performed to cure the photoresist and diffuse the acid. The silicon oxide layer was formed at the unexposed area by development employing the mixture of gases comprising hexafluoroethane or tetrafluoroethane and oxygen gas in the ratio 1:3-1:8. An ultrafine pattern was formed by dry etching exposed area with oxygen plasma and using silicon oxide layer as barrier mask. DC A89 (Photographic, laboratory equipment, optical); A13 (Aromatic mono-olefins, including polystyrene); A14 (Other substituted mono-olefins, PVC, PTFE); G06 (Photosensitive compositions and bases, photographic processes); L03 (Electro-(in)organic, chemical features of electrical devices); P84 (Other photographic); U11 (Semiconductor Materials and Processes) MC A08-D; A11-B05; A11-C02B; A11-C02C; A11-C04D; A12-L02B2; G06-D06; G06-F03C; G06-F03D; G06-G17; L04-C05; L04-C06; U11-A06A; U11-C04 IP G03F-007/26; G03F-007/039; C08F-012/24; C08F-016/14; C08F-016/38; C08F-002/48; C08F-220/18; C08F-222/06; C08F-024/00; C08K-005/00; C08K-005/06; C08K-005/156; C08L-101/00; C08L-025/18; G03F-007/027; G03F-007/38; H01L-021/027; G03F-001/08; G03F-007/40; G03F-007/004 PD GB2352049-A 17 Jan 2001 G03F-007/26 200111 Pages: 36 English JP2000347413-A 15 Dec 2000 G03F-007/039 200114 Pages: 29 Japanese KR2000073111-A 05 Dec 2000 G03F-001/08 200131 US6319654-B1 20 Nov 2001 G03F-007/40 200174 English TW477917-A 01 Mar 2002 G03F-007/26 200305 Chinese GB2352049-B 16 Apr 2003 G03F-007/26 200329 English JP3732715-B2 11 Jan 2006 G03F-007/039 200608 Pages: 36 Japanese KR520670-B 10 Oct 2005 G03F-001/08 200680 AD GB2352049-A GB010359 02 May 2000 JP2000347413-A JP133599 02 May 2000 KR2000073111-A KR016181 06 May 1999 US6319654-B1 US566290 05 May 2000 TW477917-A TW108514 04 May 2000 JP3732715-B2 JP133599 02 May 2000 KR520670-B KR016181 06 May 1999 FD JP3732715-B2 Previous Publ. Patent JP2000347413 KR520670-B Previous Publ. Patent KR2000073111 PI KR016181 06 May 1999 FS 430/296; 430/313; 430/317; 438/735 CP GB2352049-A EP628879-A1 AT & T CORP (AMTT) TAYLOR G N, WHEELER D R EP889367-A1 MATSUSHITA ELECTRIC IND CO LTD (MATU); SHINETSU CHEM CO LTD (SHIE) ENDO M, ISHIHARA T, KUBOTA T, TAKEMURA K US5059698-A CIBA GEIGY AG (CIBA) SCHULTHESS A, HUNZLKER M US5266424-A MITSUBISHI ELECTRIC CORP (MITQ) US5356758-A WO1999061497-A1 US6319654-B1 EP628879-A1 AT & T CORP (AMTT) TAYLOR G N, WHEELER D R EP889367-A1 MATSUSHITA ELECTRIC IND CO LTD (MATU); SHINETSU CHEM CO LTD (SHIE) ENDO M, ISHIHARA T, KUBOTA T, TAKEMURA K JP06266101-A US5059698-A CIBA GEIGY AG (CIBA) SCHULTHESS A, HUNZLKER M US5266424-A MITSUBISHI ELECTRIC CORP (MITQ) US5356758-A US5366852-A US5707783-A WO1999061497-A1 GB2352049-B EP628879-A1 AT & T CORP (AMTT) TAYLOR G N, WHEELER D R EP889367-A1 MATSUSHITA ELECTRIC IND CO LTD (MATU); SHINETSU CHEM CO LTD (SHIE) ENDO M, ISHIHARA T, KUBOTA T, TAKEMURA K US5059698-A CIBA GEIGY AG (CIBA) SCHULTHESS A, HUNZLKER M US5266424-A MITSUBISHI ELECTRIC CORP (MITQ) US5356758-A US5366852-A WO1999061497-A1 JP3732715-B2 JP04287047-A JP08240909-A JP10182537-A KUNHOSEOKYUI WAHAKUJUSHIKUHESA (KUNH-Non-standard) PARK J H, KIM S J, KIM J H, PAEK S JP10231330-A KURARAY CO LTD (KURS) KUSUFUJI T, FUJIWARA N, SATO T, ANDO Y, FUJITA A CR US6319654-B1 Takahashi: et al, CA 1995: 312 609; 122:147353 English Abstract of JP 06266101, File Caplus, ACS, Sep. 22, 1994.* U.S. application No. 09/448,916, Jung et al., filed Nov. 24, 1999. U.S. application No. 09/448,964, Jung et al., filed Nov. 24, 1999. U.S. application No. 09/501,096, Kong et al., filed Feb. 9, 2000. DN 1911-0-0-0-; 10151-0-0-0-; 790-0-0-0- CI R00446-; R00460-; R00843- UT DIIDW:2001094485 ER PT P PN US6156654-A; SG83117-A1; TW463268-A TI Fabrication of ultra-thin silicides on silicon substrate involves pulsed laser anneal during annealing process to form silicides, wet etching, and second pulsed laser anneal with an optical fluence. AU HO C S LU Y F KARUNASIRI R P LEE Y P LAP C LIY Y F KARUNASIRI R P G AE CHARTERED SEMICONDUCTOR MFG LTD PTE (CSEM-C) UNIV SINGAPORE NAT (UNUS-C) CHARTERED SEMICONDUCTOR MFG LTD PTE (CSEM-C) GA 2001060174 AB NOVELTY - Ultra-thin silicides on silicon substrate are fabricated by a pulsed laser anneal during annealing process to form silicides. Wet etch is then carried out. A second pulsed laser anneal is carried with an optical fluence of 0.1-0.2 J/cm2 to convert metal layer from C49 silicide into stoichiometric phase C54 silicide. USE - For fabricating ultra-thin silicides on a silicon substrate using pulsed laser salicidation. ADVANTAGE - The invention improves the thickness-uniformity across a semiconductor wafer and ensures localized heating on the metal that enhances the initial silicidation reaction during the react anneal and leads to greater reaction efficiency between titanium and silicon. It improves the process margin for the C54-TiSi2 formation with a reduction of the thermal budget as compared to rapid thermal processing. DETAILED DESCRIPTION - Ultra-thin silicides on a silicon substrate are fabricated by (a) providing metal-oxide semiconductor field-effect structures on a silicon wafer each with a polysilicon gate electrode (11) with tetraethyl orthosilicate (TEOS) glass or silicon nitride as sidewall spacers (12), source/drain active junctions and field effect oxidation in shallow trench isolation form; (b) providing selective epitaxial growth (SEG) of silicon (16) in thickness of 300-400 Angstrom on the gate electrode and source/drain; (c) cleaning the wafer with diluted hydrogen fluoride or in-situ back-sputter with argon; (d) sputter depositing a metal layer from titanium (17), cobalt, or nitride with a thickness of 200-300 Angstrom , 120-200 Angstrom , and 300-350 Angstrom , respectively; (e) sputter depositing a titanium-nitride (TiN) cap-layer with 150-200 Angstrom thickness; (f) forming a phase C29 silicide by providing a react anneal on the metal layer with a pulsed laser having a chosen wavelength so that the irradiation will be absorbed by the metal layer, the optical fluence or laser energy of 0.09-0.15 J/cm2 and a pulse duration of 15-30 nanoseconds; (g) wet etching the wafer to clean away the TiN layer (18) and any unreacted metal layer from the polysilicon gate electrodes and source/drain active junctions (13, 14); and (h) providing a final anneal using a pulsed laser with an optical fluence of 0.1-0.2 J/cm2 to convert the metal layer from the phase C49 silicide into stoichiometric phase C54 titanium silicide (TiSi2), cobalt silicides, or nickel silicides, respectively, of 300-400 Angstrom thickness. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a wafer being irradiated by a pulsed laser. Plysilicon gate electrode (11) Sidewall spacers (12) Active junctions (13,14) Epitaxial growth (SEG) of silicon (16) Titanium (17) TF TECHNOLOGY FOCUS - ELECTRONICS - Preferred Method: The react anneal is carried out at less than or equal to 200 degrees C in an ambient of nitrogen or argon at less than or equal to 760 Torr. The optical fluence of the laser of the react anneal impinging on the spacers does not produce at 720 degrees C and silicon nitride or silicon oxide of the spacers. The titanium, cobalt, or nickel silicides when formed at 850 degrees C, 750 degrees C, or 650 degrees C, respectively will not agglomerate. The final pulsed laser anneal translates to approximately 850 degrees C for titanium silicide, approximately 750 degrees C for cobalt silicide, or 650 degrees C for nickel silicides, at their interfaces. The step of providing SEG of silicon is omitted. The beam (20) of the laser is optimized to reduce the intensity variation across the diameter of the laser's beam. The laser is step-scanned or sweep-scanned across the wafer from die to die at a time.Preferred Property: The silicide layer has a contact resistance of 4-8 Omega /cont. The source/drain active junctions have a thickness of 500-1500 Angstrom . The cobalt or nickel silicides have a small lattice mismatch with the silicon substrate and have a less dopant segregation compared to titanium silicide. They observe no or little linewidth effect for sheet resistance on doped narrow polysilicon gates. A beam of the pulsed laser is die-size or 1-100 microns in size. The laser is emitting 1-100 pulses at each position of the wafer. TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The wavelength of the laser is an xenon chloride or krypton fluoride excimer laser. The sidewall spacers are made of silicon oxide. The etchant in the wet etching is ammonia-based peroxide mixture. DC L03 (Electro-(in)organic, chemical features of electrical devices); U11 (Semiconductor Materials and Processes) MC L04-C10F; L04-C16; U11-C03D; U11-C05C7; U11-C05E2 IP H01L-021/44; H01L-021/331 PD US6156654-A 05 Dec 2000 H01L-021/44 200107 Pages: 17 English SG83117-A1 18 Sep 2001 H01L-021/44 200161 English TW463268-A 11 Nov 2001 H01L-021/331 200252 Chinese AD US6156654-A US206746 07 Dec 1998 SG83117-A1 SG001597 31 Mar 1999 TW463268-A TW102268 11 Feb 2000 TW463268-A TW102268 11 Feb 2000 PI US206746 07 Dec 1998 TW102268 11 Feb 2000 FS 438/655; 438/656; 438/662; 438/664; 438/682; 438/683 CP US6156654-A US4555301-A AMERICAN TELEPHONE & TELEGRAPH CO (AMTT); AMER TELE AND TELEG (AMTE-Non-standard) GIBSON J M, JACOBSON D C, POATE J M, TUNG R T US5236865-A MICRON TECHNOLOGY INC (MICR-Non-standard) SANDHU G S, DOAN T T, YU C US5593924-A TEXAS INSTR INC (TEXI) APTE P P, PARANIPE A P US5601656-A MICRON TECHNOLOGY INC (MICR-Non-standard) LI L US5665646-A US5741725-A US5937325-A SG83117-A1 US4555301-A AMERICAN TELEPHONE & TELEGRAPH CO (AMTT); AMER TELE AND TELEG (AMTE-Non-standard) GIBSON J M, JACOBSON D C, POATE J M, TUNG R T US5236865-A MICRON TECHNOLOGY INC (MICR-Non-standard) SANDHU G S, DOAN T T, YU C US5593924-A TEXAS INSTR INC (TEXI) APTE P P, PARANIPE A P CR US6156654-A S. Wolf, Silicon Processing for the VLSI Era, vol. 2: Process Integration, Lattice Press: Sunset Beach CA, pp. 154-160, 1990. UT DIIDW:2001060174 ER PT P PN JP2000191656-A; KR2000048269-A; US2002015917-A1; KR390986-B TI Multi-oxygen containing compound for acid diffusion prevention substance in photo-lithography process contains crown ether or polyethylene glycol derivative. AU LEE G S JUNG J C JUNG M H BOK C K BAIK K H CHUNG J C CHUNG M H BOK C G BAEK G H AE HYUNDAI ELECTRONICS IND CO LTD (HYNX-C) LEE G S (LEEG-Individual) JUNG J C (JUNG-Individual) JUNG M H (JUNG-Individual) BOK C K (BOKC-Individual) BAIK K H (BAIK-Individual) HYNIX SEMICONDUCTOR INC (HYNX-C) GA 2000620949 AB NOVELTY - Multi-oxygen containing compound is crown ether or polyethylene glycol derivative. USE - For acid diffusion prevention substances in photo-lithography process and semiconductor device (claimed). ADVANTAGE - The photoresist pattern has increased adhesive strength by effectively inhibiting the acid generated in the exposure part and diffuses among non-exposing part. The photoresist composition forms highly sensitive fine pattern during semiconductor manufacturing process. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following; (i) photoresist pattern composition which contains an additive for acid diffusion prevention; (ii) photoresist pattern formation which involves coating the photoresist composition on a semiconductor substrate and forms a photoresist film. The photoresist film is exposed using exposure system followed by developing the exposed film to form photoresist pattern. TF TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Compound: The crown ether compound is formula (I) or formula (II) and polyethylene glycol derivative is formula (III),R1 and R2 = 1-10C branched or principal chain substituted (alkyl, ester, ketone, carboxylic acid or acetal) containing at least one hydroxyl group;m = 1-20;n = 1-5;a,b and c = 1-5. Preferred Glycol Derivative: The polyethylene glycol derivative is polyethylene glycol, polyethylene glycol-bis carboxy methyl-ether, polyethylene glycol-dimethyl ether or polyethylene glycol-methyl ether. Preferred Photoresist Composition: The photoresist composition comprises photoresist copolymer, photoresist generating agent, additive and organic solvent composition. The photooxidation generating agent is diphenyl iodine salt of hexafluoro phosphate, arsenate or antimonate, diphenyl para (methoxy phenyl, toluenyl, isobutyl phenyl or t-butyl phenyl) triflate, triphenyl sulfonium-hexa fluoro-phosphate, arsenate or antimonate, dibutyl naphthyl sulfonium-triflate, or triphenyl sulfonium-triflate. The organic solvent is polypropylene glycol ether acetate, ethyl-3-ethoxy propionate, methyl-3-methoxy propionate, cyclohexanone or cyclopentanone. Preferred Method: The photoresist film is baked at 50-200degreesC after and/or before exposing film. The development of exposed photoresist film performed by using tetramethyl ammonium hydroxide (TMAH) aqueous solution. TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Exposure Source: The source of exposure system is X-ray, argon fluoride (ArF), krypton fluoride (KrF), electron (E)-beam, extreme ultraviolet (EUV) or ion beam. SPECIFIC COMPOUNDS - The multioxygen containing compound is 12-crown-4, 15-crown-5, 18-crown-6, (2.2.2) bicyclic crown ether, (2.2.1) bicyclic crown ether, (2.1.1) bicyclic crown ether or (1.1.1) bicyclic crown ether. EXAMPLE - (In grams) Photo resist polymer of poly(t-butyl bicyclo hydroxy ethyl bicyclo (2.2.1) hept-5-en-2-carboxylate/2-hydroxy ethyl bicyclo (2.2.1) hept-5-en-2-carboxylate/ bicyclo (2.2.1) hept-5-en-2-carboxylic acid/maleic anhydride) (3.57) was dissolved in ethyl-3 ethoxy propionate (25). Triphenyl sulfonium-triflate (0.02) and 12-crown-4 (0.03) of formula (IV) were added to the reaction mixture and stirred. The solution was filtered to obtain photoresist composition, which was spin coated on a silicon wafer and baked at 110degreesC for 90 seconds, to form photoresist film. Subsequently, the photoresist film was exposed using ArF laser exposure equipment. The post baking of exposed film was performed for 90 seconds at 1110degreesC followed by developing the baked film with 2.38 weight percent of TMAH aqueous solution for 40 seconds, to obtain fine photoresist pattern. DC E13 (Heterocyclics); G06 (Photosensitive compositions and bases, photographic processes); L03 (Electro-(in)organic, chemical features of electrical devices); P84 (Other photographic); U11 (Semiconductor Materials and Processes) MC E06-A03; G06-D06; G06-E04; G06-G; L04-C05; U11-C04E2 IP C07D-323/00; G03F-007/004; G03F-007/038; G03F-007/039; C07D-493/08; G03F-007/031; G03F-007/38; G03F-007/20; G03F-007/40 PD JP2000191656-A 11 Jul 2000 C07D-323/00 200060 Pages: 8 Japanese KR2000048269-A 25 Jul 2000 G03F-007/031 200116 US2002015917-A1 07 Feb 2002 G03F-007/38 200213 English KR390986-B 12 Jul 2003 G03F-007/031 200409 AD JP2000191656-A JP365147 22 Dec 1999 KR2000048269-A KR059540 21 Dec 1999 US2002015917-A1 US881562 13 Jun 2001 KR390986-B KR059540 21 Dec 1999 FD US2002015917-A1 CIP of Application US465526 KR390986-B Previous Publ. Patent KR2000048269 PI KR063790 31 Dec 1998 DN 2874-0-0-0-K M; 2478-0-0-0-K M; 352-0-0-0-K M; 321946-0-0-0-K M; 321947-0-0-0-K M; 321948-0-0-0-K M MN 002495301 K M; 002495302 K M; 002495303 K M RI 07800; 42205; 40628; 00478 CI R10531-K M; R10532-K M; R10533-K M; RA2IXY-K M; RA2IXZ-K M; RA2IY0-K M UT DIIDW:2000620949 ER PT P PN US6117618-A TI Carbonized antireflective coating formation for semiconductor substrates involves depositing and carbonizing polymer layer in inert atmosphere. AU YEDUR S TEMPLETON M SINGH B RANGARAJAN B AE ADVANCED MICRO DEVICES INC (ADMI-C) GA 2000618136 AB NOVELTY - A polymer layer (16) is formed on a semiconductor substrate surface (12) for absorbing patterned illumination. At least a portion of the layer is then carbonized in an inert atmosphere. The thickness of the layer and extent of carbonized portion are maintained to control reflectivity of illumination at desired wavelength of illumination. USE - Used for semiconductors and in lithography. ADVANTAGE - Since the antireflective coating does not have any metals, harm to the semiconductor is minimized. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for a method of improving critical dimensional control during lithography by depositing a photoresist over a carbonized antireflective coating, then patterning photoresist. DESCRIPTION OF DRAWING(S) - The figure shows the cross-section of a semiconductor surface with polymer coating. Silicon substrate (12) Polymer layer (16) TF TECHNOLOGY FOCUS - MECHANICAL ENGINEERING - Preferred Process: The antireflective coating has a reflectivity of 0-15% (preferably less than 5% at a wavelength of 130-400 nm) and thickness of 200-1500 Angstrom, preferably 500-900 Angstrom. About 75-100% of the polymer layer (of thickness 200-10,000 Angstrom) is carbonized using a laser beam or electron beam by an infrared laser or excimer laser. The polymer layer has a deep ultraviolet photoresist, an I-line photoresist and a 193 nm sensitive photoresist. The photoresist is irradiated with a light having a wavelength of 130-400 nm. The inert atmosphere is of vacuum, nitrogen atmosphere or noble gas atmosphere. TECHNOLOGY FOCUS - POLYMERS - Preferred Components: The polymer layer comprises at least one polymer chosen from polyester, poly(meth)acrylate, polycarbonates, polyimides, polysulfones, polyureas, polystyrenes, polyaryl ethers, epoxy based polymers and novolac. DC A89 (Photographic, laboratory equipment, optical); G06 (Photosensitive compositions and bases, photographic processes); L03 (Electro-(in)organic, chemical features of electrical devices); P83 (Photographic processes, compositions) MC A10-E05B; A10-E10; A11-B05; A12-E07C; A12-L02B2; G06-A; G06-D06; G06-E; G06-E04; G06-G18; L04-C06B IP G03C-005/00 PD US6117618-A 12 Sep 2000 G03C-005/00 200059 Pages: 8 AD US6117618-A US185683 04 Nov 1998 PI US185683 04 Nov 1998 FS 216/41; 427/554; 427/557; 427/558; 427/596; 427/96; 430/296; 430/311; 430/312; 430/313; 430/322; 430/323; 430/512; 430/514; 430/942; 430/945; 430/950 CP US6117618-A US4286250-A NEW ENGLAND INSTR CO (NEWE-Non-standard) SACCHETI P J US4584456-A TOKYO SHIBAURA DENKI KK (TOKE) OODIARA H, SUZUKI H, SAITO M, IWASE N US5137751-A AMOCO CORP (STAD) BURGESS M J, FJARE D E, NEUHAUS H J, ROGINSKI R T, WARGOWSKI D A US5437961-A TOSHIBA KK (TOKE) YANO H, OKANO H, WATANABE T, HORIOKA K CR US6117618-A IBM Technical Disclosure Bulletin, "Carbonized Resist As Directly-Patternable Mask Absorber", Mar. 1988, vol. 30, issue 10, p 402-406, NN8803402. DN 368-0-0-0- CI R00708- UT DIIDW:2000618136 ER PT P PN JP2000216459-A TI Optical component for vacuum ultraviolet lights is made of lithium calcium aluminum fluoride or lithium strontium aluminum fluoride. AE OPTRON KK (OPTR-Non-standard) CANON KK (CANO-C) GA 2000614688 AB NOVELTY - The optical component comprises a base material which is made of lithium calcium aluminum fluoride (LiCaAlF6) or lithium strontium aluminum fluoride (LiSrAlF6). USE - For laser oscillator used in semiconductor devices such as microprocessors, memory, large scale integrator, image sensor, light emitting element and optical components for exposure system (claimed). ADVANTAGE - The processing of optical component is easier and has good durability as the deliquescence and cleavage property of the crystal is reduced. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for the exposure system which comprises laser oscillator and an optical system. DESCRIPTION OF DRAWING(S) - The figure shows the spectrum of lithium calcium aluminum fluoride before and after gamma radiation. TF TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The optical component comprises non-doped (LiCaAlF6) or (LiSrAlF6). Preferred Structure: The base material in the optical component has a flat surface with carbon axis of the crystal being a normal line or flat surface such that the optical axis at the time of usage is coherent with the carbon axis. Preferred Condition: The absorption range of the crystal in the optical component for vacuum ultraviolet light is 120 nm or less. Preferred Article: The optical component is lens, prim, mirror and window material which comprises laser oscillator. Preferred Oscillator: The laser oscillator is argon fluoride excimer or fluorine excimer. Preferred Unit: The exposure system comprises an optical component, laser oscillator and a holder containing a workpiece. DC L03 (Electro-(in)organic, chemical features of electrical devices); P81 (Optics); P84 (Other photographic); U11 (Semiconductor Materials and Processes); V07 (Fibre-optics and Light Control); V08 (Lasers and Masers) MC L04-E03B; L04-F04; U11-C04E1; V07-F02A; V08-A01A2; V08-A04B IP C30B-029/12; G02B-001/02; G03F-007/20; H01L-021/027; H01S-003/034; H01S-003/225 PD JP2000216459-A 04 Aug 2000 H01S-003/034 200059 Pages: 6 AD JP2000216459-A JP015485 25 Jan 1999 PI JP015485 25 Jan 1999 UT DIIDW:2000614688 ER PT P PN JP2000088999-A TI Carbon contaminant removal device for X-ray apparatus, which irradiates krypton fluoride excimer laser light on surface of multilayer reflective mirror or mask held in vacuum housing. AU KAMITAKA N KONDO H AE NIKON CORP (NIKR-C) GA 2000535069 AB NOVELTY - The KrF excimer laser lights (106,107) is irradiated on surface of a mask (104) or multilayer reflective mirror (102) that are held in a vacuum housing (112) under oxygen atmosphere. The carbon contamination adhering to surface of a mask or mirror, mixes with oxygen and is removed in form of carbondioxide. USE - In X-ray plant such as X-ray exposure system, X-ray microscope, X-ray analysis apparatus used in semiconductor IC manufacture. ADVANTAGE - The substance such as carbon contamination adhering to surface of optical element is removed efficiently without taking out the optical element from vacuum housing. DESCRIPTION OF DRAWING(S) - The figure shows schematic block diagram of X-ray plant. Multilayer reflective mirror (102) Mask (104) KrF excimer laser lights (106,107) Vacuum housing (112) DC G06 (Photosensitive compositions and bases, photographic processes); K08 (Nucleonics, X-ray techniques); L03 (Electro-(in)organic, chemical features of electrical devices); U11 (Semiconductor Materials and Processes); V05 (Valves, Discharge Tubes and CRTs) MC G06-D01; G06-D06; G06-G18; K08-E; L04-C07; L04-C18; U11-C06A1B; U11-C07A4; V05-F01A3; V05-F05A7X; V05-F08B; V05-F08C1; V05-F09 IP G21K-005/02; H01J-035/16 PD JP2000088999-A 31 Mar 2000 G21K-005/02 200049 Pages: 9 Japanese AD JP2000088999-A JP259057 14 Sep 1998 PI JP259057 14 Sep 1998 UT DIIDW:2000535069 ER PT P PN WO200042618-A1; AU200027240-A; US6392752-B1; US6424404-B1; US6498685-B1 TI Printing exposure apparatus for semiconductor lithography and lithographic patterning of microstructures comprises sequence of microlenses. AU JOHNSON K C AE JOHNSON K C (JOHN-Individual) GA 2000491076 AB NOVELTY - A printing exposure apparatus comprises a sequence of microlenses (L1, L2) to focus exposure illumination onto a wafer printing surface (108). USE - For semiconductor lithography and lithographic patterning of microstructures e.g. micromechanical systems, micro-optics, or porous membranes. ADVANTAGE - The apparatus eliminates the need for EUV photomasks and image projection optics. The optical tolerance requirements for the microlenses are very moderate compared to all-reflective EUV projection optics. Proximate image points are exposed sequentially, not simultaneously, so they do not interact coherently, and the printed image would be devoid of the kind of coherent proximity effects that are exhibited by projection systems. In contrast to zone plate lenses, the refractive lens elements produce very clean and highly resolved focus spots free of spurious diffraction orders and scatter, and exhibit negligible chromatic dispersion. DETAILED DESCRIPTION - A printing exposure apparatus comprises an extreme ultraviolet (EUV) radiation (104) source (preferably a xenon laser-produced plasma), an illumination system, a modulator (preferably spatial light modulator) (102), a scanner, and a printhead formed of an aperture and an array of printer pixels (101). Each pixel comprises a sequence (preferably a pair) of microlenses which receive the illuminating radiation. Each microlens other than the last in the sequence, focuses the radiation to the next microlens and the last microlens focuses the radiation to the focal point (107a) on a wafer printing surface. The modulator modulates the radiation and controllably varies the exposure intensity levels of the focal point. As the points are modulated, the scanner establishes relative motion between the printing surface and the printhead to form a synthesized, high-resolution exposure image on the printing surface. Preferred Features: A wafer print module(s) where the wafer printing surface is on the semiconductor wafer. The modules comprise printheads, which simultaneously expose a common printing surface on the wafer or preferably different printing surfaces on separate wafers. DESCRIPTION OF DRAWING(S) - The figure shows a cross-sectional schematic view of the printer pixel. Microlenses (L1, L2) Printer pixels (101) Modulator (102) EUV radiation (104) Focal point (107a) Wafer surface (108) TF TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Component: The microlens is a single, continuous profile element of molybdenum, niobium, ruthenium, rhodium or yttrium, or a multiple-element lens. It is preferably a phase Fresnel lens or a Fresnel zone plate. EXAMPLE - In an EMBODIMENT of the apparatus, each microlens is composed of an optical material whose complex refractive index has a real part less than 1 over the EUV wavelength of 10-15 nm. Each pixel further comprises a micromechanical actuation mechanism for fine-adjusting the lateral position of its corresponding microlens. DC K08 (Nucleonics, X-ray techniques); U11 (Semiconductor Materials and Processes); V05 (Valves, Discharge Tubes and CRTs); P82 (Photographic apparatus); P75 (Typewriters, stamps, duplicators); P81 (Optics) MC K08-X; U11-C04D2; U11-C04E1; V05-F05A7X; V05-F08C1 IP G21K-001/06; G01B-009/02; G03B-013/24; G03B-027/52; G02B-027/10; B41J-015/14; B41J-027/00 PD WO200042618-A1 20 Jul 2000 G21K-001/06 200043 Pages: 128 English AU200027240-A 01 Aug 2000 G21K-001/06 200054 English US6392752-B1 21 May 2002 G01B-009/02 200239 English US6424404-B1 23 Jul 2002 G03B-013/24 200254 English US6498685-B1 24 Dec 2002 G02B-027/10 200303 English AD WO200042618-A1 WOUS00619 10 Jan 2000 AU200027240-A AU027240 10 Jan 2000 US6392752-B1 US591723 12 Jun 2000 US6424404-B1 US654219 01 Sep 2000 US6498685-B1 US478233 04 Jan 2000 FD AU200027240-A Based on Patent WO200042618 US6392752-B1 Provisional Application US139002P US6424404-B1 Provisional Application US115450P US6424404-B1 Provisional Application US115451P US6424404-B1 Provisional Application US116074P US6424404-B1 Provisional Application US119403P US6424404-B1 CIP of Application US481379 US6498685-B1 Provisional Application US115451P US6498685-B1 Provisional Application US116074P US6498685-B1 Provisional Application US119403P US6498685-B1 Provisional Application US119655P US6498685-B1 Provisional Application US123527P US6498685-B1 Provisional Application US124140P US6498685-B1 Provisional Application US124422P US6498685-B1 Provisional Application US125487P US6498685-B1 Provisional Application US133450P US6498685-B1 Provisional Application US135636P US6498685-B1 Provisional Application US136925P US6498685-B1 Provisional Application US137309P US6498685-B1 Provisional Application US139002P US6498685-B1 Provisional Application US143470P US6498685-B1 Provisional Application US151461P US6498685-B1 Provisional Application US162684P PI US115450P 11 Jan 1999 US115451P 11 Jan 1999 US116074P 15 Jan 1999 US119403P 01 Feb 1999 US119655P 11 Feb 1999 US123527P 08 Mar 1999 US124140P 12 Mar 1999 US124422P 15 Mar 1999 US125487P 22 Mar 1999 US133450P 11 May 1999 US135636P 24 May 1999 US136925P 01 Jun 1999 US137309P 03 Jun 1999 US139002P 14 Jun 1999 US143470P 12 Jul 1999 US151461P 30 Aug 1999 US162684P 01 Nov 1999 US478233 04 Jan 2000 US591723 12 Jun 2000 US654219 01 Sep 2000 DS WO200042618-A1: (National): AE; AL; AM; AT; AU; AZ; BA; BB; BG; BR; BY; CA; CH; CN; CR; CU; CZ; DE; DK; DM; EE; ES; FI; GB; GD; GE; GH; GM; HR; HU; ID; IL; IN; IS; JP; KE; KG; KP; KR; KZ; LC; LK; LR; LS; LT; LU; LV; MA; MD; MG; MK; MN; MW; MX; NO; NZ; PL; PT; RO; RU; SD; SE; SG; SI; SK; SL; TJ; TM; TR; TT; TZ; UA; UG; US; UZ; VN; YU; ZA; ZW (Regional): AT; BE; CH; CY; DE; DK; EA; ES; FI; FR; GB; GH; GM; GR; IE; IT; KE; LS; LU; MC; MW; NL; OA; PT; SD; SE; SL; SZ; TZ; UG; ZW FS 356/497; 356/511; 356/512; 356/516; 356/521; 359/370; 355/38; 355/40; 355/43; 355/44; 355/46; 355/52; 355/53; 355/55; 355/67; 355/77; 359/619-626; 250/492.1; 250/492.2; 250/492.22; 347/239; 347/241; 347/244; 355/45; 359/619; 359/626; 378/34; 378/35; 378/84; 378/85 CP WO200042618-A1 US4683334-A DU PONT DE NEMOURS & CO E I (DUPO) BERGNA H E, CORBIN D R, SONNICHSEN G C US5263073-A UNIV LOUISIANA STATE & AGRIC (LOUU) FELDMAN M US5619245-A EASTMAN KODAK CO (EAST) KESSLER D, SIMPSON J M US5625471-A LITEL INSTR (LITE-Non-standard) SMITH A H US5691541-A UNIV CALIFORNIA (REGC); ULTRATECH STEPPER INC (ULTR-Non-standard) CEGLIO N M, MARKLE D A US6392752-B1 US5737084-A TAKAOKA ELEC MFG CO LTD (TAJA) ISHIHARA M US6133986-A JOHNSON K C (JOHN-Individual) JOHNSON K C US6424404-B1 US5517279-A BROOK J (BROO-Individual); PAGE J (PAGE-Individual) HUGLE W, DANDLIKER R, HERZIG H P US5631721-A SVG LITHOGRAPHY SYSTEMS INC (SVGL-Non-standard) STANTON S, OSKOTSKY M, GALLATIN G, ZERNIKE F US5982552-A NIPPON SHEET GLASS CO LTD (NIPG); SHARP KK (SHAF) NAKAMA K, TANIGUCHI S, HAMANAKA K, HAMADA H US6016185-A HUGLE LITHOGRAPHY (HUGL-Non-standard) CULLMANN E, VOLKEL R, WELLS K M US6133986-A JOHNSON K C (JOHN-Individual) JOHNSON K C WO1998012603-A1 WO1997034171-A2 US6498685-B1 JP05224396-A US4327966-A US4638334-A XEROX CORP (XERO) PAOLI T L, THORNTON R L, SPRAGUE R A, BURNHAM R D US5263073-A UNIV LOUISIANA STATE & AGRIC (LOUU) FELDMAN M US5517279-A BROOK J (BROO-Individual); PAGE J (PAGE-Individual) HUGLE W, DANDLIKER R, HERZIG H P US5619245-A EASTMAN KODAK CO (EAST) KESSLER D, SIMPSON J M US5625471-A LITEL INSTR (LITE-Non-standard) SMITH A H US5691541-A UNIV CALIFORNIA (REGC); ULTRATECH STEPPER INC (ULTR-Non-standard) CEGLIO N M, MARKLE D A US5870176-A SANDIA CORP (LOCK) SWEATT W C, STULEN R H US5882468-A INT BUSINESS MACHINES CORP (IBMC) SANDSTROM R L, CROCKETT J G, PEZESHKI B US5900637-A MASSACHUSETTS INST TECHNOLOGY (MASI) SMITH H I US5958605-A UNIV CALIFORNIA (REGC) MONTCALM C, STEARNS D G, VERNON S P US5959763-A MASSACHUSETTS INST TECHNOLOGY (MASI) BOZLER C O, RABE S US6016185-A HUGLE LITHOGRAPHY (HUGL-Non-standard) CULLMANN E, VOLKEL R, WELLS K M WO1997005526-A1 WO1998004950-A1 WO1998012603-A1 WO1999000706-A1 WO2000042618-A1 WO1997034171-A2 UT DIIDW:2000491076 ER PT P PN JP2000133585-A; US2002140915-A1; US6522384-B2; US2003107717-A1; US6791662-B2; JP3832984-B2 TI Exposure system for manufacture of semiconductor devices, supplies inert gas inside container and holder holding optical element. AU MIWA Y AE CANON KK (CANO-C) MIWA Y (MIWA-Individual) CANON KK (CANO-C) GA 2000392747 AB NOVELTY - The board is exposed to extreme ultraviolet radiation or excimer laser beam from the light source. The optical element distributed in exposure optical path of light radiation is contained in two or more containers. Inert gas is supplied inside the container and the holder holds the optical element in the container via supply units (31,37). USE - For manufacture of semiconductor devices. ADVANTAGE - The output and efficiency of exposure system is improved, as the process of supplying inert gas to the exposure optical path is performed satisfactorily through inert gas supply units. The inert gas supply time is reduced. DESCRIPTION OF DRAWING(S) - The figure shows the schematic block diagram of projection exposure device. Supply units (31,37) DC P84 (Other photographic); U11 (Semiconductor Materials and Processes); P82 (Photographic apparatus) MC U11-C04 IP H01L-021/027; G03F-007/20; G03B-027/52; G03B-027/42; G03B-027/54 PD JP2000133585-A 12 May 2000 H01L-021/027 200034 Pages: 10 Japanese US2002140915-A1 03 Oct 2002 G03B-027/52 200267 English US6522384-B2 18 Feb 2003 G03B-027/52 200317 English US2003107717-A1 12 Jun 2003 G03B-027/52 200340 English US6791662-B2 14 Sep 2004 G03B-027/52 200460 English JP3832984-B2 11 Oct 2006 H01L-021/027 200668 Pages: 14 Japanese AD JP2000133585-A JP321431 27 Oct 1998 US2002140915-A1 US426132 25 Oct 1999 US6522384-B2 US426132 25 Oct 1999 US2003107717-A1 US302933 25 Nov 2002 US6791662-B2 US302933 25 Nov 2002 JP3832984-B2 JP321431 27 Oct 1998 FD US2003107717-A1 Cont of Application US426132 US2003107717-A1 Cont of Patent US6522384 US6791662-B2 Cont of Application US426132 US6791662-B2 Cont of Patent US6522384 JP3832984-B2 Previous Publ. Patent JP2000133585 PI JP321431 27 Oct 1998 FS 353/101; 353/121; 353/122; 355/30; 355/53; 355/67; 355/73; 359/355; 359/811 CP US6522384-B2 JP06204114-A JP06216000-A JP09162117-A US3818496-A US4690528-A NIPPON KOGAKU KK (NIKR) US5430303-A US5499076-A US5559584-A NIKON CORP (NIKR) US5602683-A ASM LITHOGRAPHY BV (ASML) STRAAIJER A, MARTENS J W D US5699183-A US5892572-A NIKON CORP (NIKR) NISHI K US6031598-A EUV LLC (EUVE-Non-standard) TICHENOR D A, HANEY S J, SWEENEY D W, KUBIAK G D US6191843-B1 US6222610-B1 NIKON CORP (NIKR) HAGIWARA S, HAMATANI M US6791662-B2 JP06204114-A JP06216000-A JP09162117-A US3818496-A US4690528-A NIPPON KOGAKU KK (NIKR) US5430303-A US5499076-A US5559584-A NIKON CORP (NIKR) US5602683-A ASM LITHOGRAPHY BV (ASML) STRAAIJER A, MARTENS J W D US5699183-A US5892572-A NIKON CORP (NIKR) NISHI K US6031598-A EUV LLC (EUVE-Non-standard) TICHENOR D A, HANEY S J, SWEENEY D W, KUBIAK G D US20030020888-A1 US20030164929-A1 US6191843-B1 US6222610-B1 NIKON CORP (NIKR) HAGIWARA S, HAMATANI M US6288769-B1 NIKON CORP (NIKR) AKAGAWA M, YAMASHITA O, TANIUCHI T US6522384-B2 CANON KK (CANO) MIWA Y JP3832984-B2 JP08279459-A JP09162117-A JP09246140-A JP10050590-A UT DIIDW:2000392747 ER PT P PN WO200025322-A; WO200025322-A1; AU200014541-A; US6307913-B1 TI Imaging system for performing lithography using emitted radiation has plasma source, condenser, transmissive object, and recording medium illuminated by a shaped radiation field. AU FOSTER R M TURCU E I C SASIAN J M RIEGER H MORRIS J H TURCU E AE JMAR RES INC (JMAR-Non-standard) GA 2000350855 AB NOVELTY - An imaging system comprises a plasma source providing a shaped radiation field, a condenser with shaped optics to transmit the field, a transmissive or reflective object having a pattern position to receive the field from the condenser, and a recording medium illuminated by the field. USE - For performing lithography using the emitted radiation, e.g. in integrated circuit manufacture. ADVANTAGE - The invention provides a shaped illumination field without resorting to scanning a series of points from a point source in creating arc shapes or relatively complex condenser optics in the creation of the shaped radiation field. It also provides a shaped radiation source in the ultraviolet, extreme ultraviolet, soft x-ray, and other emission spectra. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (a) a photolithography system comprising a power source, electrodes connected to power source, target generating radiation in the field, a condenser with shaped optics, a photolithography mask, and a photoresist coated wafer illuminated by the field; and (b) a method for illuminating a mask in a photolithography system, comprising receiving the field in a transmissive object and imaging a pattern determined by the object on a recording medium. DESCRIPTION OF DRAWING(S) - The drawing shows a shaped plasma discharge system in accordance with the invention. Shaping optics (30) Camera (70) TF TECHNOLOGY FOCUS - IMAGING AND COMMUNICATION - Preferred Components: The system also includes a camera that images the transmissive object into the recording medium using the field from the condenser located between the transmissive object and recording medium. The transmissive object comprises a mask. The field includes shape profile(s) from single arc, plural arcs in stacked relation, a line, a circle, an ellipse, or an array of disks forming a profile pattern. TECHNOLOGY FOCUS - ELECTRONICS - Preferred Medium: The recording medium comprises a photoresist coated semiconductor substrate.Preferred Source: The plasma source comprises a laser source providing an output laser beam, shaping optics with a cross-sectional illumination field profile and converts light form the light source into shaped laser beam, and a target generating shaped plasma discharge emitting the field. The shaped radiation source includes radiation in a spectrum from x-ray, soft x-ray, extreme ultraviolet, or ultraviolet radiation.Preferred Properties: The output light beam has a repetition rate of 1-10000 pulses/s, an energy level of 1-100000 mJ/pulse, a wavelength of 0.2-1 microns. TECHNOLOGY FOCUS - CERAMICS AND GLASS - Preferred Components: The shaping optics includes shaping lens that is a holographic lens or an aspheric lens. DC K08 (Nucleonics, X-ray techniques); L03 (Electro-(in)organic, chemical features of electrical devices); U11 (Semiconductor Materials and Processes); V05 (Valves, Discharge Tubes and CRTs) MC K08-E; K08-F; L03-H04C; L03-H04D; L04-C06; U11-C04E1; U11-C09C; V05-E03; V05-F05A7X; V05-F08C1 IP G21K-005/00 PD WO200025322-A WO200025322-A1 04 May 2000 G21K-005/00 200030 Pages: 46 English AU200014541-A 15 May 2000 200039 US6307913-B1 23 Oct 2001 200165 AD WO200025322-A1 WOUS25271 27 Oct 1999 AU200014541-A AU014541 27 Oct 1999 US6307913-B1 US429738 27 Oct 1999 FD AU200014541-A Based on Patent WO200025322 US6307913-B1 Provisional Application US105861P PI US105861P 27 Oct 1998 US429738 27 Oct 1999 DS WO200025322-A1: (National): AE; AL; AM; AT; AU; AZ; BA; BB; BG; BR; BY; CA; CH; CN; CU; CZ; DE; DK; EE; ES; FI; GB; GD; GE; GH; GM; HR; HU; ID; IL; IN; IS; JP; KE; KG; KP; KR; KZ; LC; LK; LR; LS; LT; LU; LV; MD; MG; MK; MN; MW; MX; NO; NZ; PL; PT; RO; RU; SD; SE; SG; SI; SK; SL; TJ; TM; TR; TT; UA; UG; UZ; VN; YU; ZA; ZW (Regional): AT; BE; CH; CY; DE; DK; EA; ES; FI; FR; GB; GH; GM; GR; IE; IT; KE; LS; LU; MC; MW; NL; OA; PT; SD; SE; SL; SZ; TZ; UG; ZW FS x; 378119; 37834 CP WO200025322-A US4635282-A NIPPON TELEGRAPH & TELEPHONE CORP (NITE) OKADA I, SAITOH Y, YOSHIHARA H, NAKAYAMA S US4771447-A NIPPON TELEGRAPH & TELEPHONE CORP (NITE) SAITOH Y, OKADA I, YOSHIHARA H US4866517-A HOYA CORP (HOYA) YAMANAKA C, MOCHIZUKI T US5089711-A CALIFORNIA JAMAR (CALJ-Non-standard) MORSELL A L, SHIELDS H US5339346-A AT & T BELL LAB (AMTT) WHITE D L US5577091-A UNIV CENT FLORIDA (UYFL-Non-standard) GABEL K, JIN F, KADO M, RICHARDSON M US5737137-A UNIV CALIFORNIA (REGC) COHEN S J, SEPPALA L G WO200025322-A1 US4635282-A NIPPON TELEGRAPH & TELEPHONE CORP (NITE) OKADA I, SAITOH Y, YOSHIHARA H, NAKAYAMA S US4771447-A NIPPON TELEGRAPH & TELEPHONE CORP (NITE) SAITOH Y, OKADA I, YOSHIHARA H US4866517-A HOYA CORP (HOYA) YAMANAKA C, MOCHIZUKI T US5089711-A CALIFORNIA JAMAR (CALJ-Non-standard) MORSELL A L, SHIELDS H US5339346-A AT & T BELL LAB (AMTT) WHITE D L US5577091-A UNIV CENT FLORIDA (UYFL-Non-standard) GABEL K, JIN F, KADO M, RICHARDSON M US5737137-A UNIV CALIFORNIA (REGC) COHEN S J, SEPPALA L G US6307913-B1 US4504964-A EATON CORP (EAYT) CARTZ L, WEISS A, SCHUTTEN H P, SPELLAMN G B, JASKOLSKI S V, WACKMANN P H US4635282-A NIPPON TELEGRAPH & TELEPHONE CORP (NITE) OKADA I, SAITOH Y, YOSHIHARA H, NAKAYAMA S US4771447-A NIPPON TELEGRAPH & TELEPHONE CORP (NITE) SAITOH Y, OKADA I, YOSHIHARA H US4866517-A HOYA CORP (HOYA) YAMANAKA C, MOCHIZUKI T US5003543-A US5089711-A CALIFORNIA JAMAR (CALJ-Non-standard) MORSELL A L, SHIELDS H US5102776-A CORNELL RES FOUND INC (CORR) HAMMER D A, KALANTAR D H, QI N S US5223957-A US5339346-A AT & T BELL LAB (AMTT) WHITE D L US5426686-A US5459771-A UNIV CENT FLORIDA (UYFL-Non-standard) JIN F, GABEL K, RICHARDSON M, KADO M US5577091-A UNIV CENT FLORIDA (UYFL-Non-standard) GABEL K, JIN F, KADO M, RICHARDSON M US5737137-A UNIV CALIFORNIA (REGC) COHEN S J, SEPPALA L G US5790574-A JAMAR TECHNOLOGY CO (JAMA-Non-standard) RIEGER H, SHIELDS H, FOSTER R M CR US6307913-B1 Ceglio, Hawryluk, and Sommargren. "Frpmt-End Design Issues In Soft X-Ray Projection Lithography," Applied Optics, vol. 32, pp. 7052-7056 (Dec. 1, 1993).* Eugene Hecht and Alfred Zajac. Optics (Reading, MA: 1979). Eugene Hecht and Alfred Zajac. Optics (Reading, MA: Addison-Wesley, 1979), pp. 116-117.* Ross, Boon, Corbett, et al., "Design and Performance of a New Line Focus Geometry for X-ray Laser Experiments," Applied Optics, vol. 25, No. 9, pp. 1584-1588 (May 1, 1987).* Turcu, Forber, Grygier, et al., "High Power X-Ray Point Source For Next Generation Lithography, " Proceedings of SPIE Conference on "EUV, X-Ray, and Neutron Optics and Sources," v. 3767, pp. 21-32 (Jul. 1999).* UT DIIDW:2000350855 ER PT P PN JP2000086725-A; KR2000009572-A; US6391518-B1; KR403325-B; JP3587739-B2 TI Photoresist monomer for obtaining photoresist copolymer used in manufacturing semiconductor devices by photo-lithography, is a norbornene/maleic anhydride group compound. AU JUNG M H JUNG J C LEE G S BAIK K H CHUNG M H CHUNG J C BAEK G H AE HYUNDAI ELECTRONICS IND CO LTD (HYNX-C) HYUNDAI ELECTRONICS IND CO LTD (HYNX-C) HYNIX SEMICONDUCTOR INC (HYNX-C) GA 2000307137 AB NOVELTY - A photoresist monomer comprising norbornene/maleic anhydride type structure is new. USE - For obtaining photoresist composition used in manufacturing semiconductor device (claimed) by photo-lithography. ADVANTAGE - Since the photoresist copolymer contains an aliphatic cyclic monomer in the principal chain, the photoresist composition is etch-resistant. The adhesion of the photoresist film to the substrate is enhanced by the presence of hydrophilic group in the polymer. The carboxylate groups in the polymer raise the optical sensitivity of the photoresist. The photoresist can be developed easily in 38 wt.% aqueous solution of trimethyl ammonium hydroxide. DETAILED DESCRIPTION - A photoresist monomer of formula (2) having norbornene/maleic anhydride type structure is new. R1 = COOH; R2 = R-COOH and R = optionally substituted 1-10C alkyl INDEPENDENT CLAIMS are also included for the following: (i) a photoresist copolymer comprising compounds of formula (2) along with monomers (3) and/or (4); (ii) manufacture of photoresist copolymer involves dissolving (2), (3) and/or (4) along with maleic anhydride, maleimide derivative and/or vinylene carbonate in an organic solvent (A). The resulting solution is polymerized in the presence of a polymerization initiator to obtain the photoresist copolymer; (iii) a photoresist composition obtained by dissolving the photoresist copolymer and a photooxidant generator in an organic solvent (B); (iv) formation of a photoresist pattern by coating the photoresist composition on a wafer followed by exposure of the wafer. The wafer is developed with a developer to obtain a predetermined photoresist pattern. R3 = COORasterisk or R'-COORasterisk; Rasterisk = acid sensitive group; R4 = is same as R3 or H; and R', R5 = optionally substituted 1-10C alkyl. TF TECHNOLOGY FOCUS - POLYMERS - Preferred Photoresist Copolymer: The photoresist copolymer has the formula (100) or (101).a,b,c = polymerization ratio of each monomer.12 photoresist copolymers of specific formulae are claimed, e.g. poly(di t-butyl-5-norbornene-2,3-dicarboxylate, 2-hydroxyethyl-5-norbornene-2-carboxylate/5-norbornene- 2,3-dicarboxylic acid/maleic anhydride) and poly(ditetrahydropyranyl-5-norbornene-2,3-dicarboxylate, 2-hydroxyethyl-5-norbornene-2-carboxylate/5-norbornene- 2,3-dicarboxylic acid/maleic anhydride).Preferred Method: The polymerization of the photoresist monomers is performed at 40-90degreesC for 4-20 hours. The polymerization reaction is performed in the presence of a metal catalyst. TECHNOLOGY FOCUS - ORGANIC CHEMISTRY - Preferred Polymerization Initiator: The polymerization initiator is a radical polymerization initiator such as 2,2-azobisisobutyronitrile (AIBN), acetyl peroxide, lauryl peroxide and t-butyl peroxide. Preferred Solvent: The organic solvent (A) is tetrahydrofuran, toluene, benzene, methyl ethyl ketone or dioxane. The organic solvent (B) is ethyl-2-ethoxy propionate, methyl-3-methoxy propionate, cyclohexanone or propylene glycol-methyl ether acetate. The organic solvent and the photooxidant generator are added in the ratio of 200-1000 weight% (wt.%) and 0.05-10 wt.% respectively, based on the amount of the copolymer.Preferred Photooxidant Generator: The photooxidant generator is triphenyl sulfonium methyl triflate or dibutyl naphthyl sulfonium triflate. TECHNOLOGY FOCUS - INORGANIC CHEMISTRY - Preferred Method: The photoresist coated wafer is baked prior to exposure. Exposure is performed using ArF beam, KrF beam, E-beam, extreme ultraviolet (EUV) beam, vacuum ultraviolet (VUV) beam or X-rays. Preferred Definitions: R = linear or branched unsubstituted 1-5C alkyl; R1, R2 = COOH; Rasterisk = optionally substituted 1-20C alkyl, preferably t-butyl, 2-tetrahydropyranyl, 2-tetrahydrofuranyl, 2-ethoxyethyl or t-butoxyethyl; R5 = a 3-5C alkyl, preferably ethyl or propyl. SPECIFIC COMPOUNDS - The compound of formula (3) includes 10 specific compounds e.g. di t-butyl-5-norbornene-2,3-dicarboxylate and ditetrahydropyranyl-5-norbornene-2,3-dicarboxylate. EXAMPLE - (In mols) Di t-butyl-5-norbornene-2,3-dicarboxylate (0.85), 2-hydroxyethyl-5-norbornene-2-carboxylate (0.1), 5-norbornene-2,3-dicarboxylate acid (0.05) and maleic anhydride (1) were dissolved in tetrahydrofuran. 5.5 g of AIBN was added to the solution and the solution was polymerized at 67degreesC for 10 hours in nitrogen atmosphere. After polymerization, the polymer was settled with ethyl ether solvent and vacuum dried. Pure poly(di t-butyl-5-norbornene-2,3-dicarboxylate, 2-hydroxyethyl-5-norbornene-2-carboxylate/5-norbornene-2 ,3-dicarboxylic acid/maleic anhydride) was obtained in 31% yield. (In g) Photoresist copolymer (10) and triphenyl sulfonium triflate (1.12) were dissolved in ethyl-3-ethoxy propionate. The resulting solution was filtered to obtain a photoresist composition. The photoresist composition was coated on a silicon wafer and baked at 110degreesC for 90 seconds. The wafer is exposed by ArF laser and developed with tetramethyl ammonium oxide aqueous solution for 40 seconds. A photoresist pattern having L/S pattern of 0.13 mum was obtained. DC A89 (Photographic, laboratory equipment, optical); A17 (Unsubstituted aliphatic mono-olefins, polyethylene); G06 (Photosensitive compositions and bases, photographic processes); L03 (Electro-(in)organic, chemical features of electrical devices); P84 (Other photographic) MC A01-D08; A02-A00A; A04-F05; A08-M08; A08-S02; A10-B04; A10-E05; A10-E10; A11-B05D; A12-E07C; A12-L02B2; G06-D06; G06-E04; G06-F03C; G06-F03D; G06-G17; G06-G18; L04-C05 IP C08F-032/00; C07C-061/29; C08F-020/20; C08F-022/06; G03F-007/004; G03F-007/039; C07C-069/608; C08F-010/00; C08F-232/00; C08F-220/20; C08F-222/06 PD JP2000086725-A 28 Mar 2000 C08F-032/00 200027 Pages: 20 Japanese KR2000009572-A 15 Feb 2000 C07C-069/608 200065 US6391518-B1 21 May 2002 G03F-007/004 200239 English KR403325-B 24 Mar 2004 G03F-007/039 200445 JP3587739-B2 10 Nov 2004 C08F-232/00 200474 Pages: 31 Japanese AD JP2000086725-A JP212840 27 Jul 1999 KR2000009572-A KR030098 27 Jul 1998 US6391518-B1 US360402 23 Jul 1999 KR403325-B KR030098 27 Jul 1998 JP3587739-B2 JP212840 27 Jul 1999 FD KR403325-B Previous Publ. Patent KR2000009572 JP3587739-B2 Previous Publ. Patent JP2000086725 PI KR030098 27 Jul 1998 FS 430270.1; 430325; 430326; 526219.6; 526227; 526271; 526272; 526281; 528298; 528306; 562499; x CP US6391518-B1 EP71571-A EP291970-A EP789278-A2 JAPAN SYNTHETIC RUBBER CO LTD (JAPS) SUWA M, KAJITA T, IWANAGA S, OTA T EP794458-A2 LUCENT TECHNOLOGIES INC (LUCE) HOULIHAN F M, REICHMANIS E, NALAMASU O, WALLOW T I EP836119-A1 SAMSUNG ELECTRONICS CO LTD (SMSU) YOOL K, SANG-JUN C, DONG-WON J, CHUN-GEUN P, YOUNG-BUM K GB768813-A GB1329997-A GB1342112-A GB1484061-A GB2320501-A GB2320717-A GB2320718-A HYUNDAI ELECTRONICS IND CO LTD (HYNX) JUNG J C, BOK C K, BAIK K H GB2321060-A JP2051511-A JP10316720-A NL128164-A NL1010914-C2 HYUNDAI ELECTRONICS IND CO LTD (HYNX) JUNG M H, JUNG J C, BOK C K, BAIK K H US3370047-A US4011386-A JAPAN SYNTHETIC RUBBER CO LTD (JAPS) US4106943-A US4202955-A US4491628-A IBM CORP (IBMC) ITO H, WILLSON C G, FRECHET J M J US4883740-A BASF AG (BADI) SCHWALM R, BOETICHER A, BINDER H US5087677-A HOECHST AG (FARH) BREKNER M J, ROHRMANN J, SPALECK W, ANTBERG M US5212043-A TOSOH CORP (TOYJ) YAMAMOTO T, TODOKO M, NAGAOKA K, MATSUMURA K US5252427-A US5278214-A US5585219-A FUJITSU LTD (FUIT) US6143466-A US6150069-A WO9637526-A1 GOODRICH CO B F (GOOR) GOODALL B L, RISSE W, MATHEW J P WO9733198-A1 GOODRICH CO B F (GOOR) GOODALL B L, JAYARAMAN S, SHICK R A, RHODES L F WO9914256-A1 JP3587739-B2 JP10130340-A SAMSUNG ELECTRONICS CO LTD (SMSU) YOOL K, SANG-JUN C, DONG-WON J, CHUN-GEUN P, YOUNG-BUM K CR US6391518-B1 ACS Abstract Ref. 172992-04-0. ACS Abstract Ref. 172992-05-1. Alexander A. Dobrev, Emile Perez, Jean Claud Ader, Armand Lattes, "First Application of Functionalized in the Ester Moiety Acrylates in Diels-Alder Reaction: Invluence of Solvents on Stereochemistry," Bulgarian Chemical Communications, vol. 28, No. 2, 1995, pp. 253-258. Briggs, S.P. et al, J.C.S. Perkin Tran.I, 1, 1981, 146-149.* CA 1981:47831 Vesti Akad, Navuk BSSR, Ser. Khim. Navuk (1980) 5, pp. 128-130. CA Abstract No. 104:149512 & Macromolecules 19(4) 1266-8 (1986). CA Abstract No. 113:24734 & JP 02 051511. CA Abstract No. 124:203171 & Macromolecules 29(8) 2755-63 (1996). CA Abstract No. 124:317926 & Marcomol. Rapid Commun. 17(3) 173-180 (1996). CA Abstract No. 127:227269 & J Photopolym. Sci. Technol. 10(4) 529-534 (1997). CA Abstract No. 199328-07-9. CA Abstract No. 66:18889 & Magy. Kem. Foly. (1966) 72(11)491-3. CA Abstract No. 91:124064 & Makromol. Chem. 180(8) 1975-88 (1979). CA Ref. No. 1996: 58168 Chem. Mater. (1996), 8(2), pp. 440-447. CA Ref. No. 1996:58162 Chem. Mater. (1996), 8(2), pp. 376-381. CA Register No. 100207-98-5. CA Register No. 174659-58-6. CA Register No. 194997-59-6. CA Register No. 27056-70-8. CA Register No. 28503-41-5. CA Register No. 32759-57-2. Clemans, G.B. et al, J. Org.Chem., 37(14), 1972, 2312-2317.* F.M. Houlihan et al., "A Commercially Viable 193nm single Layer Resist Platform,", Journal of Photopolymer Science and Technology, vol. 10, 1997, pp. 511-520. J.C. Jung et al., "ArF Single Layer Resist Composed of Alicyclic Main Chain Containing Maleic Anhydride," Journal of Photopolymer Science and Technology, vol. 10, 1997, pp. 529-533. Japanese Abstract Pub. 05297591 pub. Nov. 12, 1993 for Application No. 04099967, Apr. 1992, Japan. K. Nakano et al., "Chemically Amplified Resist Based on High Etch-Resistant Polymer for 193-nm Lithography," Journal of Photopolymer Science and Technology, vol. 10, 1997, pp. 561-569. K. Nozaki and Ei Yaro, "New Protective Groups in Methacrylate Polymer for 193-nm Resists," Journal of Photopolymer Science and Technology, vol. 10, 1997, pp. 545-550. R.D. Allen et al., "The Influence of Photoacid Structure on the Design and Performance of 193nm Resists," Journal of Photopolymer Science and Technology, vol. 10, 1997, pp. 503-510. Registry No. 37503-43-8. S.J. Choi et al., "New ArF Single-layer Resist for 193-nm Lithography," Journal of Photopolymer Science and Technology, vol. 10, 1997, pp. 521-528. T. Hattori et al., "Synthesis and Dissolution Characteristics of Novel Alicyclic Polymer With Monoacid Ester Structures," Journal of Photopolymer Science and Technology, vol. 10, 1997, pp. 535-544. T.P. McGovern and C.E. Schreck, "Mosquito Repellents: Monocarboxylic Esters of Aliphatic Diols", Journal of the American Mosquito Control Association, vol. 4, No. 3, pp. 314-321. Thomas I. Wallow, et al., "Evaluation of Cycloolefin-Maleic Anhydride Alternating Copolymers as Single-Layer Photoresist for 193nm Photolithography," Proc. SPIE, vol. 2724, 1996, pp. 355-364. U.S. application No. 09/223,662, Jung et al., filed Dec. 30, 1998. Uzodinma Okoroanyanwu et al., "New Single Layer Positive Photoresists for 193 nm Photolithography," SPIE, vol. 3049, 1997, pp. 92-103. WPI Abstract No. 99-076491 & JP10316720, Feb. 1998, Japan. DN 790-0-0-0-; 131213-0-0-0-; 192-0-0-0-; 397-0-0-0-; 129633-0-0-0-; 233-0-0-0-; 8-0-0-0-; 30-0-0-0-; 37-0-0-0-; 131510-0-0-0-; 19-0-0-0- CI R00843-; R10247-; R00426-; R00899-; R05235-; R00867-; R00306-; R01057-; R00437-; R08574-; R00895- UT DIIDW:2000307137 ER PT P PN JP2000063441-A; US6143465-A; KR2000015770-A; KR281902-B; TW552472-A; JP3736994-B2; MY121402-A TI Photosensitive polymer for chemical amplification resist, for argon fluoride excimer laser and semiconductor manufacture. AU SANG-JUN C CHOI S CHOI S J AE SAMSUNG ELECTRONICS CO LTD (SMSU-C) SAMSUNG ELECTRONICS CO LTD (SMSU-C) GA 2000296013 AB NOVELTY - A photosensitive polymer of formula (1) is new. R1 = H, 1-20C aliphatic hydrocarbon or 7-20C cycloaliphatic hydrocarbon R2 = t-butyl, tetrahydro pyranyl or 1-alkoxy ethyl group l/(l+m+n) = 0.0-0.4 m/(l+m+n) = 0.5 and n/(l+m+n) = 0.1-0.5 USE - The photosensitive polymer for chemical amplification type resist composition (claimed), useful for argon fluoride excimer laser and semiconductor device manufacture. ADVANTAGE - The resist composition provides excellent lithography material. The dry type etching of the polymer is prevented due to the resistance given by the cyclopolymer alicylic compound. EA (US6143465-A) NOVELTY - A photosensitive polymer of formula (1) is new. R1 = H, 1-20C aliphatic hydrocarbon or 7-20C cycloaliphatic hydrocarbon R2 = t-butyl, tetrahydro pyranyl or 1-alkoxy ethyl group l/(l+m+n) = 0.0-0.4 m/(l+m+n) = 0.5 and n/(l+m+n) = 0.1-0.5 USE - The photosensitive polymer for chemical amplification type resist composition (claimed), useful for argon fluoride excimer laser and semiconductor device manufacture. ADVANTAGE - The resist composition provides excellent lithography material. The dry type etching of the polymer is prevented due to the resistance given by the cyclopolymer alicylic compound. TF TECHNOLOGY FOCUS - POLYMERS - Preferred Materials: The photosensitive polymer has weight average molecular weight 3000-100,000. The resist composition containing 1-15 wt.% of photooxidation generating agent is triarylsulfonium salt, diaryl iodonium salt, sulfonate and/or N-hydroxy succinimide trifluoro methane sulfonate. The photooxidation generating agent is triphenyl sulfonium trifluoromethane sulfonate, triphenylsulfonium antimonate, diphenyl iodonium antimonate, methoxydiphenyl iodonium trifluoromethane sulfonate, di-t-butyldiphenyl iodonium trifluoromethane sulfonate, 2,6-dinitro benzyl sulfonate and/or pyrogallol tris (alkyl sulfonate). 0.01 - 2 wt.% of organic base contained in the resist composition is triethylamine, triisobutyl amine, and/or triisooctyl amine, preferably diethanol amine and triethanol amine. 1-30 wt.% of dissolution inhibitor, which is salsa sapogenins is contained in the resist composition. R1 = norbornyl group R2 = 1-ethoxy ethyl group DC A89 (Photographic, laboratory equipment, optical); A14 (Other substituted mono-olefins, PVC, PTFE); G06 (Photosensitive compositions and bases, photographic processes); L03 (Electro-(in)organic, chemical features of electrical devices); P84 (Other photographic); U11 (Semiconductor Materials and Processes) MC A04-F01A; A08-M08; A12-E07C; A12-L02B2; G06-D06; G06-F03C; G06-F03D; L04-C05; U11-A06A IP C08F-222/06; C08F-232/08; G03F-007/039; G03F-007/004; C08F-010/00; G03F-007/031; G03F-007/00 PD JP2000063441-A 29 Feb 2000 C08F-222/06 200026 Pages: 8 Japanese US6143465-A 07 Nov 2000 G03F-007/004 200059 English KR2000015770-A 15 Mar 2000 G03F-007/004 200104 KR281902-B 02 Mar 2001 G03F-007/004 200214 TW552472-A 11 Sep 2003 G03F-007/00 200417 Chinese JP3736994-B2 18 Jan 2006 C08F-222/06 200606 Pages: 13 Japanese MY121402-A 28 Jan 2006 G03F-007/004 201402 English AD JP2000063441-A JP231386 18 Aug 1999 US6143465-A US349159 08 Jul 1999 KR2000015770-A KR058044 24 Dec 1998 KR281902-B KR058044 24 Dec 1998 TW552472-A TW107210 04 May 1999 JP3736994-B2 JP231386 18 Aug 1999 MY121402-A MY001984 20 May 1999 FD KR281902-B Previous Publ. Patent KR2000015770 JP3736994-B2 Previous Publ. Patent JP2000063441 PI KR033496 18 Aug 1998 KR058044 24 Dec 1998 FS 430/270.1; 430/905; 526/272; 526/281 CP US6143465-A US5843624-A LUCENT TECHNOLOGIES INC (LUCE) HOULIHAN F M, REICHMANIS E, NALAMASU O, WALLOW T I US6028153-A US6063542-A KUMHO SEOKYUI WAHAKUJUSHIKUHESA (KUMH-Non-standard) PARK J H, KIM J H, KIM K, PARK S Y, KIM S J JP3736994-B2 JP11269234-A SAMSUNG ELECTRONICS CO LTD (SMSU) CHOI S, KANG Y, JUNG D, PARK C JP11279122-A HYUNDAI ELECTRONICS IND CO LTD (HYNX) JUNG M H, KOH C W, KIM H G JP2000038416-A SAMSUNG ELECTRONICS CO LTD (SMSU) SANG-JUN C MY121402-A US5843624-A LUCENT TECHNOLOGIES INC (LUCE) HOULIHAN F M, REICHMANIS E, NALAMASU O, WALLOW T I US6028153-A US6063542-A KUMHO SEOKYUI WAHAKUJUSHIKUHESA (KUMH-Non-standard) PARK J H, KIM J H, KIM K, PARK S Y, KIM S J CR US6143465-A Alicyclic Polymers for 193nm Resist Applications, Okoroanyanwu, U. et al., Chem. Mater. 1998, 10, 3319-3327. New Positive Resists with Cycloaliphatic Structures in the Main Chain, Meyer, U. et al, Euro.Pol.J., 1999, 35, 69-76. DN 790-0-0-0- CI R00843- UT DIIDW:2000296013 ER PT P PN WO200007932-A; EP1100746-A; WO200007932-A2; AU200015159-A; EP1100746-A2; MX2001001234-A1; MX254708-B TI Inorganic hydrogen and hydrogen polymer compounds useful in a wide range of applications including isotopic purification, electrochemical applications and synthetic processing and refining methods. AU MILLS R L AE MILLS R L (MILL-Individual) BLACK LIGHT POWER INC (BLAC-Non-standard) GA 2000256178 AB NOVELTY - Inorganic hydrogen compounds include a neutral, positive or negative hydrogen species having a binding energy greater than that of the corresponding ordinary species, where the ordinary species may be unstable or not observed, plus at least one other element. The hydrogen species of increased binding energy is preferably one of Hn, H-n or H+n where n is a positive integer greater than one. USE - Claimed uses for the compounds are: isotopic separation processes; as a proton source; in xerographic toner compositions; as a magnet or magnetic memory storage agent; and as an etchant in the form of a hydrino atom. The compounds can also be used in batteries, fuel cells, cutting materials, light-weight high-strength structural materials and synthetic fibers, corrosion resistant coatings, heat resistant coatings, photoluminescent compounds, phosphors for lighting, ultraviolet and visible light source, photoconductors, chemiluminescent compounds, fluorescent compounds, optical coatings, optical filters, extreme ultraviolet laser media, fiber optic cables, magnets and magnetic computer storage media, superconductors, masking agents, agents to purify silicon, dopants in semiconductor fabrication, cathodes for thermionic generators, fuels, explosives and propellants. The compounds may be also used in chemical synthetic processing and refining methods; and as the negative ion source of the electrolyte in a high voltage cell. ADVANTAGE - The compounds exhibit unique properties compared to corresponding compounds comprising ordinary hydrogen, including chemical structure and stoichiometry; physical properties such as conductivity, melting point, boiling point and refractive index; reactivity with other elements and compounds; enhanced stability at room temperature and above; and enhanced stability in air and/or water. DETAILED DESCRIPTION - The H species of increased binding energy is preferably one of: a hydride ion of binding energy greater than 0.8 eV; an H atom of binding energy greater than 13.6 eV; an H2 molecule of binding energy greater than 15.5 eV; and a molecular H ion of binding energy greater than 16.4 eV. The compounds containing the H species of increased binding energy preferably have a purity above 50 atom%, more preferably above 98 atom%. The compounds are formed by: reacting a gaseous catalyst with gaseous H atoms to form hydrino; and reacting the hydrino with one or more of a source of electrons, H+, increased binding energy H species, and another element. The gaseous catalyst is selected from Li, Be, K, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, As, Se, Kr, Rh, Sr, Nb, Mo, Pd, Se, Te, Cs, Pr, Sm, Gd, Dy, Pb and Pt. Preferred catalysts are K+, Rb+ and He+. INDEPENDENT CLAIMS are included for: (a) Method for extracting energy from gaseous H atoms by reacting the H atoms with one of the above gaseous catalysts. (b) A cell for extracting energy from H atoms by the above method, the cell comprising a reaction chamber, a chamber containing a supply of gaseous H atoms, and a catalyst supply reservoir. (c) Method for isotopic separation comprising: reacting an increased binding energy H species with an isotopic mixture containing a molar excess of a desired isotope to form a compound enriched with the desired isotope; separating the enriched compound; and separating the increased binding energy H species from the desired isotope. DESCRIPTION OF DRAWING(S) - The drawing shows an electrolytic cell hydrino hydride reator in which increased binding energy hydrogen polymer compounds are prepared in accordance with the invention Electrolytic solution of 0.5M aqueous K2CO3 (102) Platinised Ti anode (104) Ni cathode at which hydrino hydride ions form (106) Power supply (108,110) Consumable reductant added to the cell (160) TF SPECIFIC COMPOUNDS - Examples of specific compounds containing the H species of increased binding energy are: (a) (KHmKCO3)n, (KHmKNO3)-n+ n'K-, (KHKNO3)n and (KHKOH)n where m and n are integers and X = anion; (b) (MHmM'X)n and (MHmM'X')n+ n'X- where M and M' are alkali or alkaline earth cations; (c) (MHm)n+ n'X- where M = alkali or alkaline earth metal, organo-metal, inorganic or ammonium cation; (d) M(H1O)n, M(H16)n, M(H24)n, and M(H70)n where M = any other atom, molecule or compound; (e) M(H10)q(H16)r (H24)s(H60)t(H70)u where q, r, s, t and u are all integers of which some may be zero; (f) MX where M = H16, H16H, H16H2, H24H23, OH22, OH23, MgH2H16, NaH3H16, CNH16, CH30, SiH4H16, (H16)3H15, SiH4(H16)2, (H16)4, H70, Si2H6H16, Na20SiH2(H16)4 etc, and X = another element or an increased binding energy H compound; (g) a polymer compound (KHKOHOH)p(KH5KOH)q(KHKHCO3)r(KHCO3)s(K2CO3)t where the monomers are arranged in any order; (h) and a polymer compound comprising one or more of the following monomer in any order: (MHm)n(MM'Hm)n(KHmKCO3)n(KHmKNO3)n+ nX- (MHmM'X')n- nM''+(MHm)n+ nX-(MHm)nnM'+M+H-16 (KHKOH)p(KH5KOH)q(KHKHCO3)r(KHCO3)s(K2CO3)t M'''(Hx)q(Hx')r(Hy)s(Hy')t(Hz)u where M, M' and M'' = metals such as Si, Al, IIIA, IV and transition metals, Sn, B, rare earths and alkali(ne earth) metals or an organic, organo metallic, inorganic or ammonium cation; and M''' = an increased binding energy H compound. Where X = single charged anion it is halogen, hydroxide, hydrogen carbonate, dihydrogen phosphate or nitrate. Where X = double charged anion it is carbonate, oxide, phosphate, hydrogen phosphate or sulfate. DC E37 (Mixtures of many components); J04 (Chemical/physical processes and apparatus including catalysis); J01 (Separation including e.g. evaporation, crystallisation etc.); K04 (Explosives, matches); K08 (Nucleonics, X-ray techniques); L03 (Electro-(in)organic, chemical features of electrical devices) MC E31-A04; E31-A05; E31-B02; E31-F03; E31-K03; E31-N05D; E31-P06; J01-J; J04-X; K04-C01; K04-E; K08-X; L03-B; L03-E; N01; N02; N03; N04-A IP C01B-006/00; C01B-015/00; C01B-003/00; H01B-001/12; H01M-004/36 PD WO200007932-A EP1100746-A WO200007932-A2 17 Feb 2000 C01B-006/00 200022 Pages: 181 English AU200015159-A 28 Feb 2000 200030 EP1100746-A2 23 May 2001 200130 English MX2001001234-A1 01 Apr 2002 200363 MX254708-B 13 Feb 2008 C01B-015/00 200925 Spanish AD WO200007932-A2 WOUS17171 29 Jul 1999 AU200015159-A AU015159 29 Jul 1999 EP1100746-A2 EP957460 29 Jul 1999 MX2001001234-A1 MX001234 01 Feb 2001 MX254708-B MX001234 01 Feb 2001 FD AU200015159-A Based on Patent WO200007932 EP1100746-A2 Based on Patent WO200007932 EP1100746-A2 PCT application Application WOUS17171 MX2001001234-A1 Based on Patent WO200007932 MX2001001234-A1 PCT application Application WOUS17171 MX254708-B PCT application Application WOUS17171 MX254708-B Based on Patent WO200007932 PI US095149P 03 Aug 1998 US101651P 24 Sep 1998 US105752P 26 Oct 1998 US113713P 24 Dec 1998 US123835P 11 Mar 1999 US130491P 22 Apr 1999 US141036P 29 Jun 1999 DS WO200007932-A2: (National): AE; AL; AM; AT; AU; AZ; BA; BB; BG; BR; BY; CA; CH; CN; CU; CZ; DE; DK; EE; ES; FI; GB; GD; GE; GH; GM; HR; HU; ID; IL; IN; IS; JP; KE; KG; KP; KR; KZ; LC; LK; LR; LS; LT; LU; LV; MD; MG; MK; MN; MW; MX; NO; NZ; PL; PT; RO; RU; SD; SE; SG; SI; SK; SL; TJ; TM; TR; TT; UA; UG; UZ; VN; YU; ZA; ZW (Regional): AT; BE; CH; CY; DE; DK; EA; ES; FI; FR; GB; GH; GM; GR; IE; IT; KE; LS; LU; MC; MW; NL; OA; PT; SD; SE; SL; SZ; UG; ZW EP1100746-A2: (Regional): AT; BE; CH; CY; DE; DK; ES; FI; FR; GB; GR; IE; IT; LI; LU; MC; NL; PT; SE FS x CP WO200007932-A US4512966-A ETHYL CORP (ETHY) NELSON G E US4986887-A GUPTA S D (GUPT-Individual) GUPTA S D, JACOBS J K WO9642085-A HYDROCATALYSIS POWER CORP (HYDR-Non-standard) MILLS R L, GOOD W R, POPOV A I, PHILLIPS J WO9905735-A BLACK LIGHT POWER INC (BLAC-Non-standard) MILLS R L WO200007932-A2 US4512966-A ETHYL CORP (ETHY) NELSON G E US4986887-A GUPTA S D (GUPT-Individual) GUPTA S D, JACOBS J K WO9642085-A HYDROCATALYSIS POWER CORP (HYDR-Non-standard) MILLS R L, GOOD W R, POPOV A I, PHILLIPS J WO9642085-A2 HYDROCATALYSIS POWER CORP (HYDR-Non-standard) MILLS R L, GOOD W R, POPOV A I, PHILLIPS J WO9905735-A BLACK LIGHT POWER INC (BLAC-Non-standard) MILLS R L WO9905735-A1 BLACK LIGHT POWER INC (BLAC-Non-standard) MILLS R L CR WO200007932-A MILLS R L ET AL: "DIHYDRINO MOLECULE IDENTIFICATION" FUSION TECHNOLOGY,US,AMERICAN NUCLEAR SOCIETY. LAGRANGE PARK, ILLINOIS, vol. 25, January 1994 (1994-01), pages 103-119, XP002914535 ISSN: 0748-1896 EP1100746-A See references of WO 0007932A3 WO200007932-A2 MILLS R L ET AL: "DIHYDRINO MOLECULE IDENTIFICATION" FUSION TECHNOLOGY,US,AMERICAN NUCLEAR SOCIETY. LAGRANGE PARK, ILLINOIS, vol. 25, January 1994 (1994-01), pages 103-119, XP002914535 ISSN: 0748-1896 MILLS R L ET AL: "DIHYDRINO MOLECULE IDENTIFICATION" FUSION TECHNOLOGY,US,AMERICAN NUCLEAR SOCIETY. LAGRANGE PARK, ILLINOIS, vol. 25, January 1994 (1994-01), pages 103-119, XP002914535 ISSN: 0748-1896 DN 97153-0-0-0-K S U; 209-0-0-0-K S U; 107015-0-0-0-K P U; 68-0-0-0-K S U; 104533-0-0-0-K S U; 99497-0-0-0-C K; 134210-0-0-0-C K; 104541-0-0-0-C K; 130216-0-0-0-C K; 89847-0-0-0-C K; 134277-0-0-0-C K; 133801-0-0-0-C K; 130580-0-0-0-C K; 130522-0-0-0-C K; 130645-0-0-0-C K; 131071-0-0-0-C K; 131924-0-0-0-C K; 130358-0-0-0-C K; 130439-0-0-0-C K; 133966-0-0-0-C K; 133774-0-0-0-C K; 135075-0-0-0-C K; 98768-0-0-0-C K; 132755-0-0-0-C K; 131354-0-0-0-C K; 245648-0-0-0-C K; 132991-0-0-0-C K; 132853-0-0-0-C K; 135239-0-0-0-C K; 135076-0-0-0-C K; 132756-0-0-0-C K; 131285-0-0-0-C K; 135072-0-0-0-C K; 135070-0-0-0-C K; 200332-0-0-0-C K; 252600-0-0-0-C K; 131923-0-0-0-C K; 132606-0-0-0-C K; 270848-0-0-0-N P; 270846-0-0-0-N P; 270829-0-0-0-N P; 271257-0-0-0-N P MN 001417102 N P; 001417101 N P; 001417112 N P; 001417107 N P; 001417106 N P; 001417104 N P; 001417108 N P; 001417103 N P CI R01532-K S; R01732-K S; R01666-K P; R01391-K S; R01715-K S; R07763-C K; R18940-C K; R04811-C K; RA08AV-C K; RA014O-C K; R19161-C K; R06144-C K; R06944-C K; R06751-C K; R07107-C K; R07934-C K; R11235-C K; R06206-C K; R06421-C K; R11552-C K; R17717-C K; R22445-C K; R03133-C K; R13282-C K; R10599-C K; RA0YA7-C K; R13895-C K; R13524-C K; R23247-C K; R22446-C K; R13283-C K; R10427-C K; R22436-C K; R22433-C K; RA007E-C K; RA13I4-C K; R11234-C K; R12939-C K; RA1HIJ-N P; RA1HII-N P; RA1HHZ-N P; RA1HTR-N P RG 1532-S U; 1732-S U; 1666-P U; 1391-S U; 1715-S U UT DIIDW:2000256178 ER PT P PN WO200007931-A2; AU200013081-A; ZA200100797-A; AU752869-B; AU2002318885-A1; AU2002318885-B2; IL140956-A; IN200500564-P3; IN200100096-P3; IN200700331-P3; US2009162709-A1 TI Inorganic hydrogen and hydrogen polymer compounds useful in a wide range of applications including isotopic purification, electrochemical applications and synthetic processing and refining methods. AU MILLS R L AE MILLS R L (MILL-Individual) MILLS R L (MILL-Individual) MILLS R (MILL-Individual) BLACKLIGHT POWER INC (BLAC-Non-standard) GA 2000256177 AB NOVELTY - Inorganic hydrogen compounds include a neutral, positive or negative hydrogen species having a binding energy greater than that of the corresponding ordinary species, where the ordinary species may be unstable or not observed, plus at least one other element. The hydrogen species of increased binding energy is preferably one of Hn, H-n or H+n where n is a positive integer greater than one. USE - Claimed uses for the compounds are: isotopic separation processes; as a proton source; in xerographic toner compositions; as a magnet or magnetic memory storage agent; and as an etchant in the form of a hydrino atom. The compounds can also be used in batteries, fuel cells, cutting materials, light-weight high-strength structural materials and synthetic fibers, corrosion resistant coatings, heat resistant coatings, photoluminescent compounds, phosphors for lighting, ultraviolet and visible light source, photoconductors, chemiluminescent compounds, fluorescent compounds, optical coatings, optical filters, extreme ultraviolet laser media, fiber optic cables, magnets and magnetic computer storage media, superconductors, masking agents, agents to purify silicon, dopants in semiconductor fabrication, cathodes for thermionic generators, fuels, explosives and propellants. The compounds may be also used in chemical synthetic processing and refining methods; and as the negative ion source of the electrolyte in a high voltage cell. ADVANTAGE - The compounds exhibit unique properties compared to corresponding compounds comprising ordinary hydrogen, including chemical structure and stoichiometry; physical properties such as conductivity, melting point, boiling point and refractive index; reactivity with other elements and compounds; enhanced stability at room temperature and above; and enhanced stability in air and/or water. DETAILED DESCRIPTION - The H species of increased binding energy is preferably one of: a hydride ion of binding energy greater than 0.8 eV; an H atom of binding energy greater than 13.6 eV; an H2 molecule of binding energy greater than 15.5 eV; and a molecular H ion of binding energy greater than 16.4 eV. The compounds containing the H species of increased binding energy preferably have a purity above 50 atom%, more preferably above 98 atom%. The compounds are formed by: reacting a gaseous catalyst with gaseous H atoms to form hydrino; and reacting the hydrino with one or more of a source of electrons, H+, increased binding energy H species, and another element. The gaseous catalyst is selected from Li, Be, K, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, As, Se, Kr, Rh, Sr, Nb, Mo, Pd, Se, Te, Cs, Pr, Sm, Gd, Dy, Pb and Pt. Preferred catalysts are K+, Rb+ and He+. INDEPENDENT CLAIMS are included for: (a) Method for extracting energy from gaseous H atoms by reacting the H atoms with one of the above gaseous catalysts. (b) A cell for extracting energy from H atoms by the above method, the cell comprising a reaction chamber, a chamber containing a supply of gaseous H atoms, and a catalyst supply reservoir. (c) Method for isotopic separation comprising: reacting an increased binding energy H species with an isotopic mixture containing a molar excess of a desired isotope to form a compound enriched with the desired isotope; separating the enriched compound; and separating the increased binding energy H species from the desired isotope. TF SPECIFIC COMPOUNDS - Examples of specific compounds containing the H species of increased binding energy are: (a) (KHmKCO3)n, (KHmKNO3)-n+ n'X-, (KHKNO3)n and (KHKOH)n where m and n are integers and X = anion; (b) (MHmM'X)n and (MHmM'X')n+ n'X- where M and M' are alkali or alkaline earth cations; (c) (MHm)n+ n'X- where M = alkali or alkaline earth metal, organo-metal, inorganic or ammonium cation; (d) M(H10)n, M(H16)n, M(H24)n, and M(H70)n where M = any other atom, molecule or compound; (e) M(H10)q(H16)r(H2n)s(H60)t(H70)u where q, r, s, t and u are all integers of which some may be zero; (f) MX where M = H16, H16H, H16H2, H24H23, OH22, OH23, MgH2H16, NaH3H16, CNH16, CH30, SiH4H16, (H16)3H15, SiH4(H16)2, (H16)4, H70, Si2H6H16, Na2OSiH2(H16)4 etc, and X = another element or an increased binding energy H compound; (g) a polymer compound (KHKOH)p(KH5KOH)q(KHKHCO3)r(KHCO3)s(K2CO3)t where the monomers are arranged in any ord er; (h) and a polymer compound comprising one or more of the following monomers in any order: (MHm)n(MM'Hm)n(KHmKCO3)n(KHmKNO3)n+ nX-(KHKNO3)n(KHKOH)n(MHmM'X)n(MHmM'X)+ nX-(MHmM'X')n- nM''+(MHm)n+ nX-(MHm)n- nM'+M+H-16 (KHKOH)p(KH5KOH)q(KHKHCO3)r(KHCO3)s(K2CO3)t M'''(Hx)q(Hx')r(Hy)s(Hy')t(Hz)u where M, M' and M'' = metals such as Si, Al, IIIA, IV and transition metals, Sn, B, rare earths and alkali(ne earth) metals or an organic, organo-metallic, inorganic or ammonium cation; and M''' = an increased binding energy H compound. Where X = single charged anion it is halogen, hydroxide, hydrogen carbonate, dihydrogen phosphate or nitrate. Where X = double charged anion it is carbonate, oxide, phosphate, hydrogen phosphate or sulfate. DC E37 (Mixtures of many components); J04 (Chemical/physical processes and apparatus including catalysis); J01 (Separation including e.g. evaporation, crystallisation etc.); K04 (Explosives, matches); K08 (Nucleonics, X-ray techniques); L03 (Electro-(in)organic, chemical features of electrical devices) MC E31-A04; E31-A05; E31-B02; E31-F03; E31-K03; E31-N05D; E31-P06; J01-J; J04-X; K04-C01; K04-E; K08-X; L03-B; L03-E; L03-G02; N01; N02; N03; N04-A IP C01B-006/00; C01B-000/00; C01B-015/00; B01J-019/08; C01B-003/02; H01M-008/04; H01M-008/18 PD WO200007931-A2 17 Feb 2000 C01B-006/00 200022 Pages: 384 English AU200013081-A 28 Feb 2000 C01B-006/00 200030 English ZA200100797-A 28 Nov 2001 C01B-000/00 200202 Pages: 392 English AU752869-B 03 Oct 2002 C01B-006/00 200301 English AU2002318885-A1 10 Apr 2003 C01B-006/00 200433 English AU2002318885-B2 23 Dec 2004 C01B-006/00 200510 English IL140956-A 05 Feb 2006 C01B-006/00 200617 English IN200500564-P3 07 Oct 2005 C01B-006/00 200639 English IN200100096-P3 16 Jun 2006 C01B-006/00 200648 English IN200700331-P3 20 Jul 2007 C01B-015/00 200836 English US2009162709-A1 25 Jun 2009 H01M-008/18 200942 English AD WO200007931-A2 WOUS17129 29 Jul 1999 AU200013081-A AU013081 29 Jul 1999 ZA200100797-A ZA000797 29 Jan 2001 AU752869-B AU013081 29 Jul 1999 AU2002318885-A1 AU318885 12 Dec 2002 AU2002318885-A1 AU318885 12 Dec 2002 AU2002318885-B2 AU318885 12 Dec 2002 AU2002318885-B2 AU318885 12 Dec 2002 IL140956-A IL140956 29 Jul 1999 IN200500564-P3 INMN00564 06 Jun 2005 IN200100096-P3 INMN00096 24 Jan 2001 IN200700331-P3 INMN00331 06 Mar 2007 US2009162709-A1 US155944 11 Jun 2008 FD AU200013081-A Based on Patent WO200007931 AU752869-B Previous Publ. Patent AU200013081 AU752869-B Based on Patent WO200007931 AU2002318885-A1 Div ex Application AU013081 AU2002318885-B2 Div ex Application AU013081 AU2002318885-B2 Previous Publ. Patent AU2002318885 IL140956-A Based on Patent WO200007931 IN200500564-P3 PCT application Application WOUS17129 IN200500564-P3 Div ex Application INMN00096 IN200100096-P3 PCT application Application WOUS17129 IN200700331-P3 PCT application Application WOUS17129 IN200700331-P3 Div ex Application INMN00564 US2009162709-A1 Provisional Application US095149P US2009162709-A1 Provisional Application US101651P US2009162709-A1 Provisional Application US105752P US2009162709-A1 Provisional Application US113713P US2009162709-A1 Provisional Application US123835P US2009162709-A1 Provisional Application US130491P US2009162709-A1 Provisional Application US141036P US2009162709-A1 Cont of Application US362693 US2009162709-A1 CIP of Application US225687 PI US095149P 03 Aug 1998 US101651P 24 Sep 1998 US105752P 26 Oct 1998 US113713P 24 Dec 1998 US225687 06 Jan 1999 US123835P 11 Mar 1999 US130491P 22 Apr 1999 US141036P 29 Jun 1999 AU013081 29 Jul 1999 AU318885 12 Dec 2002 US155944 11 Jun 2008 DS WO200007931-A2: (National): AE; AL; AM; AT; AU; AZ; BA; BB; BG; BR; BY; CA; CH; CN; CU; CZ; DE; DK; EE; ES; FI; GB; GD; GE; GH; GM; HR; HU; ID; IL; IN; IS; JP; KE; KG; KP; KR; KZ; LC; LK; LR; LS; LT; LU; LV; MD; MG; MK; MN; MW; MX; NO; NZ; PL; PT; RO; RU; SD; SE; SG; SI; SK; SL; TJ; TM; TR; TT; UA; UG; UZ; VN; YU; ZA; ZW (Regional): AT; BE; CH; CY; DE; DK; EA; ES; FI; FR; GB; GH; GM; GR; IE; IT; KE; LS; LU; MC; MW; NL; OA; PT; SD; SE; SL; SZ; UG; ZW CP WO200007931-A2 US4512966-A US4986887-A GUPTA S D (GUPT-Individual) GUPTA S D, JACOBS J K WO1999005735-A1 WO1996042085-A2 AU752869-B WO1999005735-A1 WO1996042085-A2 AU2002318885-B2 WO1999005735-A1 CR WO200007931-A2 MILLS R L ET AL: "DIHYDRINO MOLECULE IDENTIFICATION" FUSION TECHNOLOGY,US,AMERICAN NUCLEAR SOCIETY. LAGRANGE PARK, ILLINOIS, vol. 25, January 1994 (1994-01), pages 103-119, XP002914535 ISSN: 0748-1896 MILLS R L ET AL: "DIHYDRINO MOLECULE IDENTIFICATION" FUSION TECHNOLOGY,US,AMERICAN NUCLEAR SOCIETY. LAGRANGE PARK, ILLINOIS, vol. 25, January 1994 (1994-01), pages 103-119, XP002914535 ISSN: 0748-1896 MILLS R L ET AL: "DIHYDRINO MOLECULE IDENTIFICATION" FUSION TECHNOLOGY,US,AMERICAN NUCLEAR SOCIETY. LAGRANGE PARK, ILLINOIS, vol. 25, January 1994 (1994-01), pages 103-119, XP002914535 ISSN: 0748-1896 DN 130522-0-0-0-C K; 130645-0-0-0-C K; 131071-0-0-0-C K; 131924-0-0-0-C K; 130358-0-0-0-C K; 130439-0-0-0-C K; 133966-0-0-0-C K; 133774-0-0-0-C K; 135075-0-0-0-C K; 98768-0-0-0-C K; 132755-0-0-0-C K; 131354-0-0-0-C K; 245648-0-0-0-C K; 132991-0-0-0-C K; 132853-0-0-0-C K; 135239-0-0-0-C K; 135076-0-0-0-C K; 132756-0-0-0-C K; 131285-0-0-0-C K; 135072-0-0-0-C K; 135070-0-0-0-C K; 200332-0-0-0-C K; 252600-0-0-0-C K; 131923-0-0-0-C K; 132606-0-0-0-C K; 99497-0-0-0-C K; 134210-0-0-0-C K; 104541-0-0-0-C K; 130216-0-0-0-C K; 89847-0-0-0-C K; 134277-0-0-0-C K; 133801-0-0-0-C K; 130580-0-0-0-C K; 104517-0-0-0-C K S U; 106211-0-0-0-C K S U; 107015-0-0-0-K P U; 68-0-0-0-K S U; 209-0-0-0-K S U; 104533-0-0-0-K S U; 97153-0-0-0-K S U; 271156-0-0-0-N P; 270846-0-0-0-N P; 271151-0-0-0-N P; 271237-0-0-0-N P MN 001421508 N P; 001421507 N P; 001421506 N P; 001421505 N P; 001421504 N P; 001421503 N P; 001421502 N P; 001421501 N P; 001421509 N P; 001421510 N P CI R06751-C K; R07107-C K; R07934-C K; R11235-C K; R06206-C K; R06421-C K; R11552-C K; R17717-C K; R22445-C K; R03133-C K; R13282-C K; R10599-C K; RA0YA7-C K; R13895-C K; R13524-C K; R23247-C K; R22446-C K; R13283-C K; R10427-C K; R22436-C K; R22433-C K; RA007E-C K; RA13I4-C K; R11234-C K; R12939-C K; R07763-C K; R18940-C K; R04811-C K; RA08AV-C K; RA014O-C K; R19161-C K; R06144-C K; R06944-C K; R01750-C K; R01827-C K; R01666-K P; R01391-K S; R01732-K S; R01715-K S; R01532-K S; RA1HR3-N P; RA1HII-N P; RA1HQY-N P; RA1HT9-N P RG 1750-S U; 1827-S U; 1666-P U; 1391-S U; 1732-S U; 1715-S U; 1532-S U UT DIIDW:2000256177 ER PT P PN US6018537-A; JP2000058944-A; US38054-E; JP2008022026-A TI Narrow band modular production quality high repetition rate argon fluoride excimer laser used in commercial laser system. AU HUEBER J DAS P P ISHIHARA T DUFFEY T P MELCHIOR J T HOFMANN T NESS R M NEWMAN P C PARTLO W N ROTHWEIL D A SANDSTROM R L BESAUCELE H A MORTON R G HUEBER J M THOMAS JOHN AE CYMER INC (CYME-C) CYMER INC (CYME-C) CYMER INC (CYME-C) GA 2000146798 AB NOVELTY - A laser pulse energy control system with a laser pulse energy monitor and a computer processor, regulates the voltage provided by a pulse power system based on the historical pulse energy data to produce laser pulses within desired range. USE - Used in commercial laser system. For use in lithographic equipment in semiconductor manufacture. ADVANTAGE - Uses argon instead of krypton. Improves pattern resolution of laser beam. Eliminates noise resulting to erroneous power supply voltages. Prevents excessive wear and failure of blower bearings. Offers reliable laser operation. Generates high voltage power supply from capacitors. Eliminates possibility of oil leakage. Improves pulse rate. DETAILED DESCRIPTION - The laser has a laser chamber with elongated electrodes and a gas circulator. A pulse power system has a power supply circuit and a pulse compression and amplification circuit. DESCRIPTION OF DRAWING(S) - The figure shows the front view of a narrow band modular production quality high repetition rate argon fluoride excimer laser. EA (JP2000058944-A) NOVELTY - A laser pulse energy control system with a laser pulse energy monitor and a computer processor, regulates the voltage provided by a pulse power system based on the historical pulse energy data to produce laser pulses within desired range. USE - Used in commercial laser system. For use in lithographic equipment in semiconductor manufacture. ADVANTAGE - Uses argon instead of krypton. Improves pattern resolution of laser beam. Eliminates noise resulting to erroneous power supply voltages. Prevents excessive wear and failure of blower bearings. Offers reliable laser operation. Generates high voltage power supply from capacitors. Eliminates possibility of oil leakage. Improves pulse rate. DC E36 (Non-metallic elements, semi-metals (Se, Te, B, Si) and their compounds); K08 (Nucleonics, X-ray techniques); L03 (Electro-(in)organic, chemical features of electrical devices); U11 (Semiconductor Materials and Processes); V08 (Lasers and Masers); S02 (Engineering Instrumentation, recording equipment, general testing methods); S03 (Scientific Instrumentation, photometry, calorimetry); V07 (Fibre-optics and Light Control) MC E31-J; K08-X; L03-F02B; L04-D; U11-C04E1; V08-A01C; V08-A02C; V08-A04B IP H01S-003/10; H01S-003/03; H01S-003/137; H01S-003/225; H01S-003/097 PD US6018537-A 25 Jan 2000 H01S-003/10 200013 Pages: 46 English JP2000058944-A 25 Feb 2000 H01S-003/03 200021 Pages: 110 Japanese US38054-E 01 Apr 2003 H01S-003/10 200330 English JP2008022026-A 31 Jan 2008 H01S-003/097 200810 Pages: 39 Japanese AD US6018537-A US273446 19 Mar 1999 JP2000058944-A JP177295 20 May 1999 US38054-E US801383 07 Mar 2001 JP2008022026-A JP236405 12 Sep 2007 FD US6018537-A CIP of Application US896384 US6018537-A CIP of Application US939611 US6018537-A CIP of Application US947474 US6018537-A CIP of Application US995832 US6018537-A CIP of Application US034870 US6018537-A CIP of Application US041474 US6018537-A CIP of Application US082139 US6018537-A CIP of Application US157067 US6018537-A CIP of Application US162341 US6018537-A CIP of Application US165593 US6018537-A CIP of Application US206526 US6018537-A CIP of Application US211825 US6018537-A CIP of Application US217340 US6018537-A CIP of Application US271041 US38054-E CIP of Application US896384 US38054-E CIP of Application US939611 US38054-E CIP of Application US947474 US38054-E CIP of Application US995832 US38054-E CIP of Application US034870 US38054-E CIP of Application US041474 US38054-E CIP of Application US082139 US38054-E CIP of Application US157067 US38054-E CIP of Application US162341 US38054-E CIP of Application US165593 US38054-E CIP of Application US206526 US38054-E CIP of Application US211825 US38054-E CIP of Application US217340 US38054-E CIP of Application US271041 US38054-E Application US273446 US38054-E Reissue of Patent US6018537 JP2008022026-A Div ex Application JP177295 PI US896384 18 Jul 1997 US082139 20 May 1998 US157067 18 Sep 1998 US162341 28 Sep 1998 US165593 02 Oct 1998 US206526 07 Dec 1998 US211825 15 Dec 1998 US217340 21 Dec 1998 US271041 17 Mar 1999 US273446 19 Mar 1999 US801383 07 Mar 2001 FS 372/102; 372/33; 372/34; 372/37; 372/38; 372/58; 372/60; 372/82; 372/86; 372/87; 372/92 CP US6018537-A US5856991-A CYMER INC (CYME) ERSHOV A I US38054-E US4488311-A US4959840-A CYMER LASER TECH (CYME) AKINS R P, LARSON D G, SENGUPTA U K, SANDSTROM R L US5463650-A KOMATSU SEISAKUSHO KK (KOMS) US5856991-A CYMER INC (CYME) ERSHOV A I DN 131893-0-0-0-K U CI R09481-K U UT DIIDW:2000146798 ER PT P PN JP2000007730-A; US6080524-A; KR2000000652-A; KR263906-B1; TW473651-A; JP3655762-B2; MY129169-A TI Resist composition containing photosensitive polymer used for lithography using argon fluoride excimer laser - contains photosensitive polymer and photoacid generator. AU SANG-JUN C CHOI S CHOI S J AE SAMSUNG ELECTRONICS CO LTD (SMSU-C) SAMSUNG ELECTRONICS CO LTD (SMSU-C) GA 2000142568 AB NOVELTY - The resist composition contains a photosensitive polymer (I) used for chemical amplification type resist and a photoacid generator. DETAILED DESCRIPTION - The resist composition contains photosensitive polymer (I) used for chemical amplification type resist and photoacid generator. R1 = 1-20C aliphatic hydrocarbon; R2 = t-butyl, tetrahydro pyranyl or 1-alkoxy ethyl group; l/(l+m+n), n/(l+m+n) and m/(l+m+n) = 0.2-0.5, 0.2-0.5 and 0.0-0.4 respectively . An INDEPENDENT CLAIM is also included for photosensitive polymer (I). USE - For lithography using argon fluoride (ArF) excimer laser and for semiconductor manufacture. ADVANTAGE - The resist composition containing photosensitive polymer with an annular backbone, is provided. The polymer is resistive to dry type etching. Excellent lithography is performed using the resist composition. EA (US6080524-A) NOVELTY - The resist composition contains a photosensitive polymer (I) used for chemical amplification type resist and a photoacid generator. DETAILED DESCRIPTION - The resist composition contains photosensitive polymer (I) used for chemical amplification type resist and photoacid generator. R1 = 1-20C aliphatic hydrocarbon; R2 = t-butyl, tetrahydro pyranyl or 1-alkoxy ethyl group; l/(l+m+n), n/(l+m+n) and m/(l+m+n) = 0.2-0.5, 0.2-0.5 and 0.0-0.4 respectively . An INDEPENDENT CLAIM is also included for photosensitive polymer (I). USE - For lithography using argon fluoride (ArF) excimer laser and for semiconductor manufacture. ADVANTAGE - The resist composition containing photosensitive polymer with an annular backbone, is provided. The polymer is resistive to dry type etching. Excellent lithography is performed using the resist composition. DC A89 (Photographic, laboratory equipment, optical); E19 (Other organic compounds general - unknown structure, mixtures); G06 (Photosensitive compositions and bases, photographic processes); L03 (Electro-(in)organic, chemical features of electrical devices); P84 (Other photographic); U11 (Semiconductor Materials and Processes) MC A08-M08; A12-E07C; A12-L02B2; E07-A02J; G06-D06; G06-F03C; G06-F03D; L04-C05; U11-C04 IP C08F-120/30; G03F-007/039; H01L-021/027; G03F-007/004; C08F-220/30; C08F-236/20 PD JP2000007730-A 11 Jan 2000 C08F-120/30 200013 Pages: 7 Japanese US6080524-A 27 Jun 2000 G03F-007/004 200036 English KR2000000652-A 15 Jan 2000 G03F-007/039 200059 KR263906-B1 01 Sep 2000 G03F-007/039 200134 TW473651-A 21 Jan 2002 G03F-007/039 200308 Chinese JP3655762-B2 02 Jun 2005 C08F-220/30 200537 Pages: 10 Japanese MY129169-A 30 Mar 2007 G03F-007/004 201402 English AD JP2000007730-A JP350530 09 Dec 1998 US6080524-A US251158 17 Feb 1999 KR2000000652-A KR020395 02 Jun 1998 KR263906-B1 KR020395 02 Jun 1998 TW473651-A TW115318 15 Sep 1998 JP3655762-B2 JP350530 09 Dec 1998 MY129169-A MY004260 17 Sep 1998 FD JP3655762-B2 Previous Publ. Patent JP2000007730 PI KR020395 02 Jun 1998 FS 430/270.1; 430/905; 430/910 CP US6080524-A US5879857-A LUCENT TECHNOLOGIES INC (LUCE) CHANDROSS E A, HOULIHAN F M, NALAMASU O, REICHMANIS E, WALLOW T I US5962191-A US5981142-A HYUNDAI ELECTRONICS IND CO LTD (HYNX) JUNG J C, BOK C K, KIM H G JP3655762-B2 JP11350530-A US5247035-A MY129169-A US5247035-A UT DIIDW:2000142568 ER PT P PN WO9960679-A1; US6028872-A; AU9952028-A; JP2000077762-A; JP2000200933-A; US6128323-A; US6137821-A; EP1080522-A1; TW412891-A; US6330261-B1; TW443020-A; TW445686-A; US6396582-B1; EP1821377-A2; EP1821377-A3 TI Modular argon-fluoride excimer laser for lithography in semiconductor integrated circuit manufacture. AU HOFMANN T HUEBER J DAS P P ISHIHARA T DUFFEY T P MELCHIOR J T BESAUCELE H A MORTON R G NESS R M NEWMAN P C PARTLO W N ROTHWEIL D A SANDSTROM R L MELCHER P C SMITH B D BIRX D L THOMAS JOHN ERSHOV A I MYERS D W OZARSKI R G PADMABANDU G G THOMPSON P S UJAZDOWSKI R C WATSON T A WEBB R K ZAMBON P FOMENKOV I V HUEBER J M BUCK J D CYBULSKI R F AE CYMER INC (CYME-C) CYMER INC (CYME-C) CYMER INC (CYME-C) CYMER INC (CYME-C) GA 2000039482 AB NOVELTY - Each main section of the laser is in modular form, allowing easy replacement. Modules forming the laser are: (a) laser chamber module (211) (b) pulse power system (3 modules) (c) optical resonator comprising a line narrowing (206) and an output coupling (216) module (d) a wavemeter module (213) (e) an electrical control module (205) (f) a cooling water module (203) (g) a gas control module (202). USE - For lithography in semiconductor integrated circuit manufacture industry. ADVANTAGE - Improvements in the pulse power unit produce faster rise times and improved pulse energy control. The compression head saturable inductor reduces the quantity of oil required and virtually eliminates the possibility of leakage. DESCRIPTION OF DRAWING(S) - The figure shows a system configuration of the argon-fluoride excimer laser. Gas control module (202) Cooling water module (203) Electrical control module (205) Line narrowing module (206) Laser chamber module (211) Wavemeter module (213) Output coupling module (216) EA (US6028872-A) NOVELTY - Each main section of the laser is in modular form, allowing easy replacement. Modules forming the laser are: (a) laser chamber module (211) (b) pulse power system (3 modules) (c) optical resonator comprising a line narrowing (206) and an output coupling (216) module (d) a wavemeter module (213) (e) an electrical control module (205) (f) a cooling water module (203) (g) a gas control module (202). USE - For lithography in semiconductor integrated circuit manufacture industry. ADVANTAGE - Improvements in the pulse power unit produce faster rise times and improved pulse energy control. The compression head saturable inductor reduces the quantity of oil required and virtually eliminates the possibility of leakage. (JP2000077762-A) NOVELTY - Each main section of the laser is in modular form, allowing easy replacement. Modules forming the laser are: (a) laser chamber module (211) (b) pulse power system (3 modules) (c) optical resonator comprising a line narrowing (206) and an output coupling (216) module (d) a wavemeter module (213) (e) an electrical control module (205) (f) a cooling water module (203) (g) a gas control module (202). USE - For lithography in semiconductor integrated circuit manufacture industry. ADVANTAGE - Improvements in the pulse power unit produce faster rise times and improved pulse energy control. The compression head saturable inductor reduces the quantity of oil required and virtually eliminates the possibility of leakage. (JP2000200933-A) NOVELTY - Each main section of the laser is in modular form, allowing easy replacement. Modules forming the laser are: (a) laser chamber module (211) (b) pulse power system (3 modules) (c) optical resonator comprising a line narrowing (206) and an output coupling (216) module (d) a wavemeter module (213) (e) an electrical control module (205) (f) a cooling water module (203) (g) a gas control module (202). USE - For lithography in semiconductor integrated circuit manufacture industry. ADVANTAGE - Improvements in the pulse power unit produce faster rise times and improved pulse energy control. The compression head saturable inductor reduces the quantity of oil required and virtually eliminates the possibility of leakage. (US6128323-A) NOVELTY - Each main section of the laser is in modular form, allowing easy replacement. Modules forming the laser are: (a) laser chamber module (211) (b) pulse power system (3 modules) (c) optical resonator comprising a line narrowing (206) and an output coupling (216) module (d) a wavemeter module (213) (e) an electrical control module (205) (f) a cooling water module (203) (g) a gas control module (202). USE - For lithography in semiconductor integrated circuit manufacture industry. ADVANTAGE - Improvements in the pulse power unit produce faster rise times and improved pulse energy control. The compression head saturable inductor reduces the quantity of oil required and virtually eliminates the possibility of leakage. (US6137821-A) NOVELTY - Each main section of the laser is in modular form, allowing easy replacement. Modules forming the laser are: (a) laser chamber module (211) (b) pulse power system (3 modules) (c) optical resonator comprising a line narrowing (206) and an output coupling (216) module (d) a wavemeter module (213) (e) an electrical control module (205) (f) a cooling water module (203) (g) a gas control module (202). USE - For lithography in semiconductor integrated circuit manufacture industry. ADVANTAGE - Improvements in the pulse power unit produce faster rise times and improved pulse energy control. The compression head saturable inductor reduces the quantity of oil required and virtually eliminates the possibility of leakage. (TW412891-A) NOVELTY - Each main section of the laser is in modular form, allowing easy replacement. Modules forming the laser are: (a) laser chamber module (211) (b) pulse power system (3 modules) (c) optical resonator comprising a line narrowing (206) and an output coupling (216) module (d) a wavemeter module (213) (e) an electrical control module (205) (f) a cooling water module (203) (g) a gas control module (202). USE - For lithography in semiconductor integrated circuit manufacture industry. ADVANTAGE - Improvements in the pulse power unit produce faster rise times and improved pulse energy control. The compression head saturable inductor reduces the quantity of oil required and virtually eliminates the possibility of leakage. DC K08 (Nucleonics, X-ray techniques); L03 (Electro-(in)organic, chemical features of electrical devices); U11 (Semiconductor Materials and Processes); V08 (Lasers and Masers); E36 (Non-metallic elements, semi-metals (Se, Te, B, Si) and their compounds); S02 (Engineering Instrumentation, recording equipment, general testing methods); S03 (Scientific Instrumentation, photometry, calorimetry); V07 (Fibre-optics and Light Control) MC K08-X; L03-F02; L04-C06; L04-D; E31-J; U11-C04D; U11-C04E1A; U11-D02; V08-A01C; V08-A02C; V08-A04B; V08-A09 IP H01S-003/10; H01S-003/00; H01S-003/137; H01S-003/036; H01S-003/134; H01S-003/225; H01S-003/08; H01S-003/101; H01S-003/22; G01J-003/28; H01S-003/097; H01S-003/23 PD WO9960679-A1 25 Nov 1999 H01S-003/10 200003 Pages: 87 English US6028872-A 22 Feb 2000 H01S-003/00 200017 English AU9952028-A 06 Dec 1999 H01S-003/10 200019 English JP2000077762-A 14 Mar 2000 H01S-003/137 200024 Pages: 127 Japanese JP2000200933-A 18 Jul 2000 H01S-003/137 200040 Pages: 57 Japanese US6128323-A 03 Oct 2000 H01S-003/00 200050 English US6137821-A 24 Oct 2000 H01S-003/08 200055 English EP1080522-A1 07 Mar 2001 H01S-003/10 200114 English TW412891-A 21 Nov 2000 H01S-003/101 200121 Chinese US6330261-B1 11 Dec 2001 H01S-003/00 200204 English TW443020-A 23 Jun 2001 H01S-003/22 200206 Chinese TW445686-A 11 Jul 2001 H01S-003/101 200221 Chinese US6396582-B1 28 May 2002 G01J-003/28 200243 English EP1821377-A2 22 Aug 2007 H01S-003/10 200757 English EP1821377-A3 24 Oct 2007 H01S-003/10 200771 English AD WO9960679-A1 WOUS11087 18 May 1999 US6028872-A US211825 15 Dec 1998 AU9952028-A AU052028 18 May 1999 JP2000077762-A JP177294 20 May 1999 JP2000200933-A JP376225 02 Dec 1999 US6128323-A US157067 18 Sep 1998 US6137821-A US217340 21 Dec 1998 EP1080522-A1 EP937141 18 May 1999 TW412891-A TW108176 11 Jun 1999 US6330261-B1 US271041 17 Mar 1999 TW443020-A TW121001 15 Dec 1999 TW445686-A TW108175 11 Jun 1999 US6396582-B1 US206526 07 Dec 1998 EP1821377-A2 EP009853 18 May 1999 EP1821377-A3 EP009853 18 May 1999 FD US6028872-A CIP of Application US990848 US6028872-A CIP of Application US995832 US6028872-A CIP of Application US118773 US6028872-A CIP of Patent US5936988 US6028872-A CIP of Patent US5940421 AU9952028-A Based on Patent WO9960679 US6128323-A CIP of Application US842305 US6128323-A CIP of Application US893904 US6128323-A CIP of Application US995832 US6128323-A CIP of Application US034870 US6128323-A CIP of Application US041474 US6128323-A CIP of Application US109596 US6128323-A CIP of Application US118773 US6128323-A CIP of Patent US5835520 US6128323-A CIP of Patent US5848089 US6128323-A CIP of Patent US5936988 US6128323-A CIP of Patent US5982795 US6128323-A CIP of Patent US5991324 US6128323-A CIP of Patent US6005879 US6128323-A CIP of Patent US6028880 US6137821-A CIP of Application US869239 US6137821-A CIP of Application US886715 US6137821-A CIP of Application US926721 US6137821-A CIP of Application US987127 US6137821-A CIP of Application US204111 US6137821-A CIP of Patent US5852627 US6137821-A CIP of Patent US5856991 EP1080522-A1 PCT application Application WOUS11087 EP1080522-A1 Based on Patent WO9960679 US6330261-B1 CIP of Application US896384 US6330261-B1 CIP of Application US939611 US6330261-B1 CIP of Application US947474 US6330261-B1 CIP of Application US995832 US6330261-B1 CIP of Application US034870 US6330261-B1 CIP of Application US041474 US6330261-B1 CIP of Application US082139 US6330261-B1 CIP of Application US157067 US6330261-B1 CIP of Application US162341 US6330261-B1 CIP of Application US165593 US6330261-B1 CIP of Application US206526 US6330261-B1 CIP of Application US211825 US6330261-B1 CIP of Application US217340 US6330261-B1 CIP of Patent US5978391 US6330261-B1 CIP of Patent US5978394 US6330261-B1 CIP of Patent US5978409 US6330261-B1 CIP of Patent US5982795 US6330261-B1 CIP of Patent US5982800 US6330261-B1 CIP of Patent US5991324 US6330261-B1 CIP of Patent US6005879 US6330261-B1 CIP of Patent US6014398 US6330261-B1 CIP of Patent US6028872 US6330261-B1 CIP of Patent US6128323 US6330261-B1 CIP of Patent US6137821 US6330261-B1 CIP of Patent US6162495 US6396582-B1 CIP of Application US896384 US6396582-B1 CIP of Patent US5978391 EP1821377-A2 Div ex Application EP937141 EP1821377-A2 Div ex Patent EP1080522 EP1821377-A3 Div ex Application EP937141 EP1821377-A3 Div ex Patent EP1080522 PI US842305 23 Apr 1997 US869239 04 Jun 1997 US896384 18 Jul 1997 US990848 15 Dec 1997 US082139 20 May 1998 US157067 18 Sep 1998 US162341 28 Sep 1998 US165593 02 Oct 1998 US204111 02 Dec 1998 US206526 07 Dec 1998 US211825 15 Dec 1998 US217340 21 Dec 1998 US271041 17 Mar 1999 DS WO9960679-A1: (National): AL; AM; AT; AU; AZ; BA; BB; BG; BR; BY; CA; CH; CN; CU; CZ; DE; DK; EE; ES; FI; GB; GD; GE; GH; GM; HR; HU; ID; IL; IN; IS; JP; KE; KG; KP; KR; KZ; LC; LK; LR; LS; LT; LU; LV; MD; MG; MK; MN; MW; MX; NO; NZ; PL; PT; RO; RU; SD; SE; SG; SI; SK; SL; TJ; TM; TR; TT; UA; UG; US; UZ; VN; YU; ZW (Regional): AT; BE; CH; CY; DE; DK; EA; ES; FI; FR; GB; GH; GM; GR; IE; IT; KE; LS; LU; MC; MW; NL; OA; PT; SD; SE; SL; SZ; UG; ZW EP1080522-A1: (Regional): DE; NL EP1821377-A2: (Regional): DE; NL EP1821377-A3: (Regional): DE; NL FS 372/25; 372/30; 372/33; 372/38; 372/39; 372/81; 372/82; 372/37; 372/55; 372/57; 372/58; 372/100; 372/102; 372/108; 372/19; 372/20; 372/5; 372/98; 356/326; 356/328; 356/437; 372/29; 372/32 CP WO9960679-A1 US5856911-A NAT SEMICONDUCTOR CORP (NASC) RILEY J B US6028872-A US4258334-A SRI INT (STRI) MCCUSKER M V, LORENTS D C, HILL R M, HUESTIS D L US4549091-A US4606034-A US4611327-A AMOCO CORP (STAD) CLARK D J, FAHLEN T S US4710939-A US4740982-A US4964137-A US5138622-A US5142543-A KOMATSU SEISAKUSHO KK (KOMS) WAKABAYASH O, KOWAKA M US5463650-A KOMATSU SEISAKUSHO KK (KOMS) US5642374-A KOMATSU SEISAKUSHO KK (KOMS) US5710787-A KOMATSU SEISAKUSHO KK (KOMS) AMADA Y, WARABAYASHI O, ITO N US5729562-A CYMER LASER TECHNOLOGIES (CYME); ADVANCED PULSE POWER TECHNOLOGIES INC (ADPU-Non-standard) BIRX D L, DAS P P, FOMENKOV I V, PARTLO W N, WATSON T A US5936988-A CYMER INC (CYME) PARTLO W N, BIRX D L, NESS R M, ROTHWEIL D A, MELCHER P C, SMITH B D US5940421-A CYMER INC (CYME) PARTLO W N, BIRX D L, NESS R M, ROTHWEIL D A, MELCHER P C, SMITH B D US6128323-A US4258334-A SRI INT (STRI) MCCUSKER M V, LORENTS D C, HILL R M, HUESTIS D L US4606034-A US4611327-A AMOCO CORP (STAD) CLARK D J, FAHLEN T S US4740982-A US4959840-A CYMER LASER TECH (CYME) AKINS R P, LARSON D G, SENGUPTA U K, SANDSTROM R L US4964137-A US5025445-A CYMER LASER TECH (CYME) ANDERSON S L, SANDSTROM R L US5048041-A CYMER LASER TECH (CYME) AKINS R P, LARSON D G, SENGUPTA U K, SANDSTROM R L US5313481-A US DEPT ENERGY (USAT) BALL D G, BIRX D L, COOK E G US5315611-A US DEPT ENERGY (USAT) BALL D G, BIRX D L, COOK E G, MILLER J L US5337330-A CYMER LASER TECHNOLOGIES (CYME) LARSON D G US5448580-A US DEPT ENERGY (USAT) COOK E G, ARNOLD P A, BALL D G, BIRX D L US5463650-A KOMATSU SEISAKUSHO KK (KOMS) US5642374-A KOMATSU SEISAKUSHO KK (KOMS) US5719896-A CYMER INC (CYME) WATSON T A US5835520-A CYMER INC (CYME) DAS P P, ERSHOV A I US5848089-A CYMER INC (CYME) LARSON D G, DAS P P, SARKAR K, UJAZDOWSKI R C US5936988-A CYMER INC (CYME) PARTLO W N, BIRX D L, NESS R M, ROTHWEIL D A, MELCHER P C, SMITH B D US5982795-A CYMER INC (CYME) PARTLO W N, BIRX D L, NESS R M, ROTHWEIL D A, MELCHER P C, SMITH B D US5991324-A CYMER INC (CYME) KNOWLES D S, AZZOLA J H, BESAUCELE H A, DAS P P, ERSHOV A I, JUHASZ T, NESS R M, OZARSKI R G, PARTLO W N, ROTHWEIL D A, SANDSTROM R L, UJAZDOWSKI R C, WATSON T A, FOMENKOV I V US6005879-A CYMER INC (CYME) SANDSTROM R L, DAS P P, FOMENKOV I V, BESAUCELE H A, OZARSKI R G US6014398-A CYMER INC (CYME) HOFMANN T, ISHIHARA T, DAS P P, ERSHOV A I US6021150-A US6028879-A CYMER INC (CYME) ERSHOV A I US6028880-A CYMER INC (CYME) CARLESI J R, ROKNI S, GONG M, WATSON T A, DAS P P, BINDER M C, TANTRA M, TAMMADGE D J, PATTERSON D G US6055259-A AUTONOMOUS TECHNOLOGIES CORP (AUTO-Non-standard) FREY R W, BOLEN P D US6137821-A US5898725-A CYMER INC (CYME) FOMENKOV I V, SANDSTROM R L US5901163-A CYMER INC (CYME) ERSHOV A I EP1080522-A1 EP783193-A1 US4618960-A US4774714-A LASER SCI INC (LASE-Non-standard) JAVAN A US4916707-A LAMBDA PHYSIK FORSC (LAMB-Non-standard) ROSENKRANZ H US5005180-A SCHNEIDER USA INC (BSCI) EDELMAN W, CONSTANTIN D, STEFANOVSK M, JAN Y L, FAHLEN T S, HANSEN R L, KRAMASZ K J US5448580-A US DEPT ENERGY (USAT) COOK E G, ARNOLD P A, BALL D G, BIRX D L US6330261-B1 JP08008481-A JP09260749-A US4258334-A SRI INT (STRI) MCCUSKER M V, LORENTS D C, HILL R M, HUESTIS D L US4549091-A US4606034-A US4611327-A AMOCO CORP (STAD) CLARK D J, FAHLEN T S US4618960-A US4710787-A US4710939-A US4740982-A US4803696-A US4823354-A LUMONICS INC (LUMO-Non-standard) ZNOTINS T A, REID J, GUTZ S J US4959840-A CYMER LASER TECH (CYME) AKINS R P, LARSON D G, SENGUPTA U K, SANDSTROM R L US4964137-A US4972429-A US5015099-A ANRITSU CORP (ANRI) NAGAI H, UEHARA K, AIZAWA M US5020879-A US5025445-A CYMER LASER TECH (CYME) ANDERSON S L, SANDSTROM R L US5029177-A US5033055-A US5033056-A US5048041-A CYMER LASER TECH (CYME) AKINS R P, LARSON D G, SENGUPTA U K, SANDSTROM R L US5080465-A INSTRUMENTS SA (INST-Non-standard) LAUDE J P US5138622-A US5142543-A KOMATSU SEISAKUSHO KK (KOMS) WAKABAYASH O, KOWAKA M US5177750-A HEWLETT-PACKARD CO (HEWP) ZORABEDIAN P US5260961-A US5307364-A US5313481-A US DEPT ENERGY (USAT) BALL D G, BIRX D L, COOK E G US5315611-A US DEPT ENERGY (USAT) BALL D G, BIRX D L, COOK E G, MILLER J L US5337330-A CYMER LASER TECHNOLOGIES (CYME) LARSON D G US5377215-A CYMER LASER TECHNOLOGIES (CYME) DAS P P, LARSON D G US5420877-A US5431794-A NISSIN ELECTRIC CO LTD (NDEN); KURARAY CO LTD (KURS) MATSUMARU S, WATANABE T, KUBOTSU A, NOGAWA S, OGATA K, INOUE D US5436764-A US5448580-A US DEPT ENERGY (USAT) COOK E G, ARNOLD P A, BALL D G, BIRX D L US5450207-A CYMER LASER TECHNOLOGIES (CYME) FOMENKOV I US5463650-A KOMATSU SEISAKUSHO KK (KOMS) US5493393-A BOEING CO (BOEI) BERANEK M W, CAPRON B A, HUGGINS R W, GRIFFITH D M, LIVEZY D L, TRAYNOR T US5559816-A LAMBDA PHYSIK GES HERSTELLUNG VON LASERN (LAMB-Non-standard) BASTING D, KLEINSCHMIDT J US5642374-A KOMATSU SEISAKUSHO KK (KOMS) US5668067-A US5708495-A US5710787-A KOMATSU SEISAKUSHO KK (KOMS) AMADA Y, WARABAYASHI O, ITO N US5719896-A CYMER INC (CYME) WATSON T A US5729562-A CYMER LASER TECHNOLOGIES (CYME); ADVANCED PULSE POWER TECHNOLOGIES INC (ADPU-Non-standard) BIRX D L, DAS P P, FOMENKOV I V, PARTLO W N, WATSON T A US5748656-A US5761236-A US5764678-A NEC CORP (NIDE) TADA A US5771258-A CYMER INC (CYME) PARTLO W N, FOMENKOV I V, MORTON R G US5780843-A US5802094-A US5835520-A CYMER INC (CYME) DAS P P, ERSHOV A I US5856991-A CYMER INC (CYME) ERSHOV A I US6128323-A CYMER INC (CYME) HOFMANN T, HUEBER J, DAS P P, ISHIHARA T, DUFFEY T P, MELCHIOR J T, BESAUCELE H A, MORTON R G, NESS R M, NEWMAN P C, PARTLO W N, ROTHWEIL D A, SANDSTROM R L US6396582-B1 US3600091-A US4488311-A US4575243-A US4823354-A LUMONICS INC (LUMO-Non-standard) ZNOTINS T A, REID J, GUTZ S J US4983039-A HITACHI LTD (HITA) HARADA T, KUROSAKI T, KITA T, TERASAWA T US4991178-A US5015099-A ANRITSU CORP (ANRI) NAGAI H, UEHARA K, AIZAWA M US5018855-A US5025445-A CYMER LASER TECH (CYME) ANDERSON S L, SANDSTROM R L US5450207-A CYMER LASER TECHNOLOGIES (CYME) FOMENKOV I US5780843-A US5835520-A CYMER INC (CYME) DAS P P, ERSHOV A I US5978394-A CYMER INC (CYME) NEWMAN P C, SANDSTROM R L US6028879-A CYMER INC (CYME) ERSHOV A I EP1821377-A2 US4689794-A NORTHROP CORP (NOTH) BROSNAN S J CR WO9960679-A1 See also references of EP 1080522A1 See also references of EP 1080522A1 EP1080522-A1 See also references of WO 9960679A1 See also references of WO 9960679A1 US6330261-B1 Bass, Michael, Van Stryland, Eric W., Williams,David R. and Wolfe, William L., Handbook of Optics, McGraw-Hill, Inc., 1995. 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